SiC substrate P-type 4H/6H-P 3C-N 4inch withe makulidwe a 350um Kupanga giredi Giredi yoyipa

Kufotokozera Kwachidule:

Chipangizo cha P-type 4H/6H-P 3C-N cha mainchesi 4 cha SiC, chokhala ndi makulidwe a 350 μm, ndi chipangizo cha semiconductor chogwira ntchito bwino chomwe chimagwiritsidwa ntchito kwambiri popanga zida zamagetsi. Chodziwika ndi kutentha kwake kwapadera, magetsi owonongeka kwambiri, komanso kukana kutentha kwambiri komanso malo owononga, chipangizochi ndi chabwino kwambiri pakugwiritsa ntchito zamagetsi zamagetsi. Chipangizo chamagetsi chopangira chimagwiritsidwa ntchito popanga zinthu zazikulu, kuonetsetsa kuti zinthu zikuyenda bwino komanso kudalirika kwambiri pazida zamagetsi zapamwamba. Pakadali pano, chipangizo chamagetsi chongoyerekeza chimagwiritsidwa ntchito makamaka pokonza zolakwika pamakina, kukonza zida, ndi kupanga ma prototyping. Kapangidwe kabwino ka SiC kamapangitsa kuti ikhale chisankho chabwino kwambiri pazida zomwe zimagwira ntchito m'malo otentha kwambiri, amphamvu kwambiri, komanso okhala ndi ma frequency ambiri, kuphatikiza zida zamagetsi ndi makina a RF.


Mawonekedwe

Tebulo la magawo a 4H/6H-P 3C-N substrate ya 4inch SiC

4 Silikoni m'mimba mwake wa inchiGawo la Carbide (SiC) Kufotokozera

Giredi Kupanga kwa MPD Kopanda

Giredi (Z) Giredi)

Kupanga Kokhazikika

Giredi (P) Giredi)

 

Giredi Yopanda Chilungamo (D Giredi)

M'mimba mwake 99.5 mm ~ 100.0 mm
Kukhuthala 350 μm ± 25 μm
Kuwongolera kwa Wafer Off axis: 2.0°-4.0° kulowera [11]2(-)0] ± 0.5° pa 4H/6H-P, On axis:〈111〉± 0.5° ya 3C-N
Kuchuluka kwa mapaipi ang'onoang'ono 0 cm-2
Kusakhazikika mtundu wa p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
n-mtundu 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Kuyang'ana Kwambiri Pang'onopang'ono 4H/6H-P -

{1010} ± 5.0°

3C-N -

{110} ± 5.0°

Utali Woyamba Wathyathyathya 32.5 mm ± 2.0 mm
Utali Wachiwiri Wathyathyathya 18.0 mm ± 2.0 mm
Kuyang'ana Kwachiwiri Kwapafupi Silikoni yoyang'ana mmwamba: 90° CW. kuchokera ku Prime flat±5.0°
Kupatula Mphepete 3 mm 6 mm
LTV/TTV/Uta/Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Kuuma Chipolishi Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm
Ming'alu ya Mphepete Yopangidwa ndi Kuwala Kwakukulu Kwambiri Palibe Kutalika kokwanira ≤ 10 mm, kutalika kamodzi ≤2 mm
Mbale za Hex Ndi Kuwala Kwakukulu Kwambiri Malo osonkhanitsidwa ≤0.05% Malo osonkhanitsidwa ≤0.1%
Malo Opangidwa ndi Polytype Ndi Kuwala Kwambiri Palibe Malo osonkhanitsidwa ≤3%
Kuphatikizidwa kwa Kaboni Yowoneka Malo osonkhanitsidwa ≤0.05% Malo osonkhanitsidwa ≤3%
Kukanda kwa Silicon Pamwamba Ndi Kuwala Kwambiri Palibe Kutalika kokwanira ≤1 × m'mimba mwake wa wafer
Ma Chips a M'mphepete Okhala ndi Mphamvu Yaikulu Palibe chololedwa m'lifupi ndi kuya kwa ≥0.2mm 5 zololedwa, ≤1 mm iliyonse
Kuipitsidwa kwa Silicon pamwamba ndi Mphamvu Yaikulu Palibe
Kulongedza Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer

Zolemba:

※Miyezo ya zolakwika imagwiritsidwa ntchito pamwamba pa wafer yonse kupatulapo malo olekanitsa m'mphepete. # Mikwingwirima iyenera kuwonedwa pa nkhope ya Si yokha.

Chipangizo cha P-type 4H/6H-P 3C-N cha mainchesi 4 cha SiC chokhala ndi makulidwe a 350 μm chimagwiritsidwa ntchito kwambiri popanga zipangizo zamagetsi ndi zamagetsi. Ndi kutentha kwabwino kwambiri, magetsi owonongeka kwambiri, komanso kukana kwambiri malo ozungulira, chipangizochi ndi chabwino kwambiri pamagetsi amphamvu monga ma switch amphamvu kwambiri, ma inverter, ndi zida za RF. Zipangizo zopangira zimagwiritsidwa ntchito popanga zinthu zazikulu, kuonetsetsa kuti chipangizocho chikugwira ntchito bwino komanso molondola, zomwe ndizofunikira kwambiri pamagetsi amphamvu komanso kugwiritsa ntchito pafupipafupi. Zipangizo zopangira zinthu zopanda pake, kumbali ina, zimagwiritsidwa ntchito kwambiri poyesa njira, kuyesa zida, komanso kupanga zitsanzo, zomwe zimathandiza kusunga kuwongolera khalidwe ndi kusinthasintha kwa njira popanga ma semiconductor.

Ubwino wa zinthu zopangidwa ndi N-type SiC composite ndi monga

  • Kutentha Kwambiri: Kutaya kutentha bwino kumapangitsa kuti gawo lapansi likhale labwino kwambiri pakugwiritsa ntchito kutentha kwambiri komanso mphamvu zambiri.
  • Kuwonongeka Kwambiri kwa Voliyumu: Imathandizira kugwira ntchito kwamagetsi amphamvu kwambiri, kuonetsetsa kuti zida zamagetsi zamagetsi ndi RF zimagwira ntchito bwino.
  • Kukana Malo Ovuta: Yolimba kwambiri m'malo otentha kwambiri komanso m'malo owononga, zomwe zimapangitsa kuti igwire ntchito kwa nthawi yayitali.
  • Kulondola kwa Kupanga-Giredi: Imatsimikizira kuti imagwira ntchito bwino komanso yodalirika popanga zinthu zazikulu, yoyenera kugwiritsa ntchito mphamvu zapamwamba komanso RF.
  • Giredi Yoyeserera Yopanda Chilungamo: Zimathandiza kuwerengera molondola njira, kuyesa zida, ndi kupanga zitsanzo popanda kuwononga ma wafers apamwamba opanga.

 Ponseponse, gawo la P-type 4H/6H-P 3C-N SiC la mainchesi 4 lokhala ndi makulidwe a 350 μm limapereka zabwino zazikulu pakugwiritsa ntchito zamagetsi zamagetsi. Mphamvu yake yotsika ya kutentha komanso mphamvu yowononga zimapangitsa kuti ikhale yoyenera kwambiri m'malo amphamvu kwambiri komanso otentha kwambiri, pomwe kukana kwake kumadera ovuta kumatsimikizira kulimba ndi kudalirika. Gawo la kupanga limatsimikizira kugwira ntchito kolondola komanso kogwirizana popanga zida zamagetsi zamagetsi ndi zida za RF. Pakadali pano, gawo lachiwonetsero ndilofunikira pakukonza njira, kuyesa zida, ndi kupanga prototyping, kuthandizira kuwongolera khalidwe ndi kusinthasintha pakupanga ma semiconductor. Zinthu izi zimapangitsa kuti magawo a SiC akhale osinthika kwambiri pakugwiritsa ntchito kwapamwamba.

Chithunzi Chatsatanetsatane

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