8Inch 200mm 4H-N SiC Wafer Conductive dummy kafukufuku kalasi

Kufotokozera Kwachidule:

Pamene misika yamayendedwe, mphamvu ndi mafakitale ikusintha, kufunikira kwamagetsi odalirika, okwera kwambiri akupitilira kukula.Kuti akwaniritse zofunikira pakuwongolera magwiridwe antchito a semiconductor, opanga zida akuyang'ana zida za bandgap semiconductor, monga 4H SiC Prime Grade portfolio yathu ya 4H n -type silicon carbide (SiC) wafers.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Chifukwa cha mawonekedwe ake apadera akuthupi ndi amagetsi, 200mm SiC wafer semiconductor material amagwiritsidwa ntchito popanga zida zowoneka bwino, zotentha kwambiri, zosagwira ma radiation, komanso zida zamagetsi zothamanga kwambiri.Mtengo wa gawo la 8inch SiC ukuchepa pang'onopang'ono pomwe ukadaulo ukupita patsogolo komanso kufunikira kumakula.Zomwe zachitika posachedwa zaukadaulo zimabweretsa kupanga masikelo opangira ma 200mm SiC wafers.Ubwino waukulu wa zida za SiC wafer semiconductor poyerekeza ndi zowotcha za Si ndi GaAs: Mphamvu yamagetsi ya 4H-SiC panthawi ya kuwonongeka kwa chigumukire ndi yoposa kuyitanitsa kwaukulu kuposa milingo yofananira ya Si ndi GaAs.Izi zimabweretsa kuchepa kwakukulu pachitetezo cha boma Ron.Low on-state resistivity, kuphatikizapo mkulu kachulukidwe panopa ndi matenthedwe conductivity, amalola kugwiritsa ntchito yaing'ono kufa kwa zipangizo mphamvu.Kutentha kwapamwamba kwa SiC kumachepetsa kukana kwa kutentha kwa chip.Zida zamagetsi zamagetsi zozikidwa pa zowotcha za SiC zimakhala zokhazikika pakapita nthawi komanso pa kutentha kokhazikika, zomwe zimatsimikizira kudalirika kwazinthu.Silicon carbide imalimbana kwambiri ndi cheza cholimba, chomwe sichimanyoza zida zamagetsi za chip.Kutentha kocheperako kwambiri kwa kristalo (kupitilira 6000C) kumakupatsani mwayi wopanga zida zodalirika zogwirira ntchito movutikira komanso ntchito zapadera.Pakadali pano, titha kupereka zowotcha zazing'ono za 200mmSiC mosalekeza komanso mosalekeza ndikukhala ndi katundu m'nyumba yosungiramo zinthu.

Kufotokozera

Nambala	Kanthu	Chigawo	Kupanga	Kafukufuku	Dummy
1. Zigawo
1.1	polytype	--	4H	4H	4H
1.2	kuyang'ana pamwamba	°	<11-20>4±0.5	<11-20>4±0.5	<11-20>4±0.5
2. Parameter yamagetsi
2.1	dopant	--	n-mtundu wa Nayitrogeni	n-mtundu wa Nayitrogeni	n-mtundu wa Nayitrogeni
2.2	resistivity	uwu ·cm	0.015 ~ 0.025	0.01~0.03	NA
3. Mawotchi parameter
3.1	awiri	mm	200±0.2	200±0.2	200±0.2
3.2	makulidwe	μm	500 ± 25	500 ± 25	500 ± 25
3.3	Notch orientation	°	[1- 100] ± 5	[1- 100] ± 5	[1- 100] ± 5
3.4	Kuzama kwa Notch	mm	1-1.5	1-1.5	1-1.5
3.5	LTV	μm	≤5(10mm*10mm)	≤5(10mm*10mm)	≤10(10mm*10mm)
3.6	TTV	μm	≤10	≤10	≤15
3.7	Kugwada	μm	-25-25	-45-45	- 65-65
3.8	Warp	μm	≤30	≤50	≤70
3.9	AFM	nm	Ra≤0.2	Ra≤0.2	Ra≤0.2
4. Kapangidwe
4.1	kachulukidwe ka micropipe	ndi cm2	≤2	≤10	≤50
4.2	zitsulo	ma atomu/cm2	≤1E11	≤1E11	NA
4.3	TSD	ndi cm2	≤500	≤1000	NA
4.4	BPD	ndi cm2	≤2000	≤5000	NA
4.5	TED	ndi cm2	≤7000	≤10000	NA
5. Khalidwe labwino
5.1	kutsogolo	--	Si	Si	Si
5.2	kumaliza pamwamba	--	Si-nkhope CMP	Si-nkhope CMP	Si-nkhope CMP
5.3	chidutswa	mkate / mkate	≤100(kukula≥0.3μm)	NA	NA
5.4	zikande	mkate / mkate	≤5, Total Utali≤200mm	NA	NA
5.5	M'mphepete tchipisi/ma indents/ming'alu/madontho/kuipitsidwa	--	Palibe	Palibe	NA
5.6	Zigawo za polytype	--	Palibe	Chigawo ≤10%	Chigawo ≤30%
5.7	chizindikiro chakutsogolo	--	Palibe	Palibe	Palibe
6. Back khalidwe
6.1	kumaliza kumbuyo	--	C-nkhope MP	C-nkhope MP	C-nkhope MP
6.2	zikande	mm	NA	NA	NA
6.3	Kumbuyo zolakwika m'mphepete chips / indents	--	Palibe	Palibe	NA
6.4	Msana roughness	nm	Ra≤5	Ra≤5	Ra≤5
6.5	Kulemba kumbuyo	--	Notch	Notch	Notch
7. Mphepete
7.1	m'mphepete	--	Chamfer	Chamfer	Chamfer
8. Phukusi
8.1	kuyika	--	Epi-okonzeka ndi vacuum kuyika	Epi-okonzeka ndi vacuum kuyika	Epi-okonzeka ndi vacuum kuyika
8.2	kuyika	--	Zophika zambiri kupaka makaseti	Zophika zambiri kupaka makaseti	Zophika zambiri kupaka makaseti