SiC gawo lapansi P-mtundu 4H/6H-P 3C-N 4inch makulidwe a 350um Kupanga kalasi Dummy kalasi

SiC gawo lapansi P-mtundu 4H/6H-P 3C-N 4inchi makulidwe a 350um Kupanga kalasi Dummy kalasi Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Gawo la P-mtundu wa 4H/6H-P 3C-N 4-inchi SiC, lokhala ndi makulidwe a 350 μm, ndi chida chapamwamba cha semiconductor chomwe chimagwiritsidwa ntchito kwambiri popanga zida zamagetsi. Wodziwika bwino chifukwa cha matenthedwe ake apadera, magetsi owonongeka kwambiri, komanso kukana kutentha kwambiri komanso malo owononga, gawo lapansili ndiloyenera kugwiritsa ntchito zamagetsi zamagetsi. Gawo laling'ono lopanga zinthu limagwiritsidwa ntchito popanga zazikulu, kuwonetsetsa kuwongolera kokhazikika komanso kudalirika kwambiri pazida zamakono zamagetsi. Pakadali pano, gawo laling'ono la dummy-grade limagwiritsidwa ntchito kwambiri pakukonza zolakwika, kuwongolera zida, komanso kupanga ma prototyping. Zinthu zapamwamba za SiC zimapanga chisankho chabwino kwambiri pazida zomwe zimagwira ntchito m'malo otentha kwambiri, othamanga kwambiri, komanso othamanga kwambiri, kuphatikiza zida zamagetsi ndi machitidwe a RF.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

4inch SiC gawo lapansi P-mtundu 4H/6H-P 3C-N chizindikiro tebulo

4 silicon m'mimba mwakeCarbide (SiC) gawo lapansi Kufotokozera

Gulu			Zero MPD Production Gulu (Z Gulu)	Standard Production Gawo (P Gulu)	Dummy Grade (D Gulu)
Diameter			99.5 mm ~ 100.0 mm
Makulidwe			350 μm ± 25 μm
Wafer Orientation			Kuchokera kumbali: 2.0 ° -4.0 ° kulowera [112(-)0] ± 0.5° kwa 4H/6H-P, On olamulira:〈111〉± 0.5° kwa 3C-N
Kuchuluka kwa Micropipe			0cm-2
Kukaniza	p-mtundu 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-mtundu 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Chiyambi cha Flat Orientation		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Utali Woyambira Wathyathyathya			32.5 mm ± 2.0 mm
Kutalika kwa Sekondale			18.0 mm ± 2.0 mm
Sekondale Flat Orientation			Silicon nkhope m'mwamba: 90 ° CW. kuchokera ku Prime flat±5.0 °
Kupatula M'mphepete			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ukali			Chipolishi Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Mphepete Mng'alu Mwa Kuwala Kwakukulu Kwambiri			Palibe		Utali wophatikiza ≤ 10 mm, utali umodzi≤2 mm
Hex Plates Mwa Kuwala Kwakukulu Kwambiri			Malo owonjezera ≤0.05%		Malo owonjezera ≤0.1%
Madera a Polytype Mwa Kuwala Kwakukulu Kwambiri			Palibe		Malo owonjezera≤3%
Mawonekedwe a Carbon Inclusions			Malo owonjezera ≤0.05%		Malo owonjezera ≤3%
Silicon Surface Scratches Ndi Kuwala Kwakukulu Kwambiri			Palibe		Kutalikirana kutalika≤1 × awiri wafer
Mphepete Chips Mmwamba Mwamphamvu Kuwala			Palibe chololedwa ≥0.2mm m'lifupi ndi kuya		5 zololedwa, ≤1 mm iliyonse
Silicon Surface Kuipitsidwa Ndi High Intensity			Palibe
Kupaka			Makaseti amitundu yopyapyala kapena Chidebe Chowotcha Chimodzi

Ndemanga:

※ Malire a zolakwika amagwira ntchito pamtunda wonse kupatulapo m'mphepete mwake. # Zikandazi ziyenera kuyang'aniridwa pa Si nkhope yokha.

Gawo la P-mtundu wa 4H/6H-P 3C-N 4-inch SiC lokhala ndi makulidwe a 350 μm limagwiritsidwa ntchito kwambiri popanga zida zapamwamba zamagetsi ndi zamagetsi. Ndi matenthedwe abwino kwambiri amafuta, ma voltages osweka kwambiri, komanso kukana kwamphamvu kumadera owopsa, gawo lapansili ndilabwino kwambiri pamagetsi amagetsi ochita bwino kwambiri monga ma switch othamanga kwambiri, ma inverter, ndi zida za RF. Magawo opangira zinthu amagwiritsidwa ntchito popanga zazikulu, kuwonetsetsa kuti zida zodalirika, zolondola kwambiri, zomwe ndizofunikira kwambiri pamagetsi amagetsi komanso kugwiritsa ntchito pafupipafupi. Magawo a Dummy-grade, kumbali ina, amagwiritsidwa ntchito makamaka pakuwongolera, kuyesa zida, ndi chitukuko cha ma prototype, kuthandiza kuwongolera bwino komanso kusasinthika kwadongosolo pakupanga semiconductor.

Kufotokozera Ubwino wa magawo a N-mtundu wa SiC umaphatikizapo

High Thermal Conductivity: Kutentha kwachangu kumapangitsa gawo lapansi kukhala labwino kwambiri pakutentha kwambiri komanso kugwiritsa ntchito mphamvu zambiri.
High Breakdown Voltage: Imathandizira kugwira ntchito kwamagetsi apamwamba, kuonetsetsa kudalirika kwamagetsi amagetsi ndi zida za RF.
Kukaniza Malo Ovuta: Kukhalitsa mumikhalidwe yoopsa monga kutentha kwakukulu ndi malo owononga, kuonetsetsa kuti ntchitoyo ikugwira ntchito kwa nthawi yaitali.
Production-Grade Precision: Imawonetsetsa kuti magwiridwe antchito apamwamba komanso odalirika pakupanga kwakukulu, oyenera mphamvu zapamwamba komanso kugwiritsa ntchito RF.
Dummy-Grade Yoyezetsa: Imathandizira kuwongolera molondola, kuyesa zida, ndi ma prototyping popanda kusokoneza zowotcha zamagulu opangira.

Ponseponse, gawo la P-mtundu wa 4H/6H-P 3C-N 4-inch SiC lokhala ndi makulidwe a 350 μm limapereka zabwino zambiri pazogwiritsa ntchito kwambiri zamagetsi. Kutentha kwake kwapamwamba kwambiri komanso kuphulika kwamagetsi kumapangitsa kuti ikhale yabwino kwa malo okhala ndi mphamvu komanso kutentha kwambiri, pamene kukana kwake ku zovuta kumatsimikizira kulimba ndi kudalirika. Gawo laling'ono lopanga zinthu limatsimikizira kugwira ntchito moyenera komanso kosasintha pakupanga kwakukulu kwamagetsi amagetsi ndi zida za RF. Pakadali pano, gawo laling'ono la dummy ndilofunikira pakuwongolera, kuyesa zida, ndi ma prototyping, kuthandizira kuwongolera kwamtundu komanso kusasinthika pakupanga semiconductor. Izi zimapangitsa magawo a SiC kukhala osinthika kwambiri pamapulogalamu apamwamba.