SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n mtundu 2 3 4 6 8inch zilipo

SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n mtundu 2 3 4 6 8inch kupezeka Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Timapereka zowotcha zamtundu wapamwamba wa SiC (Silicon Carbide), zomwe zimayang'ana kwambiri zowotcha za N-mtundu wa 4H-N ndi 6H-N, zomwe ndi zabwino kugwiritsa ntchito ma optoelectronics apamwamba, zida zamagetsi, komanso malo otentha kwambiri. . Zophika zamtundu wa N izi zimadziwika ndi kutenthetsa kwapadera, kukhazikika kwamagetsi kwapadera, komanso kulimba kodabwitsa, zomwe zimawapangitsa kukhala abwino kwambiri pazogwiritsa ntchito zamagetsi zamagetsi, makina oyendetsa magalimoto amagetsi, zosinthira mphamvu zowonjezera, komanso magetsi aku mafakitale. Kuphatikiza pa zopereka zathu zamtundu wa N, timaperekanso P-mtundu wa 4H / 6H-P ndi 3C SiC wafers pazosowa zapadera, kuphatikizapo zipangizo zamakono ndi RF, komanso ma photonic applications. Zophika zathu zimapezeka kukula kuchokera ku 2 mainchesi mpaka 8 mainchesi, ndipo timapereka mayankho oyenerera kuti akwaniritse zofunikira zamagulu osiyanasiyana a mafakitale. Kuti mudziwe zambiri kapena kufunsa, chonde omasuka kutilankhula nafe.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Katundu

4H-N ndi 6H-N (N-mtundu wa SiC Wafers)

Ntchito:Amagwiritsidwa ntchito makamaka mumagetsi amagetsi, ma optoelectronics, ndi ntchito zotentha kwambiri.

M'mimba mwake:50.8 mpaka 200 mm.

Makulidwe:350 μm ± 25 μm, ndi makulidwe osankha a 500 μm ± 25 μm.

Kukaniza:N-mtundu 4H / 6H-P: ≤ 0.1 Ω · cm (Z-grade), ≤ 0.3 Ω · cm (P-grade); N-mtundu 3C-N: ≤ 0.8 mΩ·cm (Z-grade), ≤ 1 mΩ·cm (P-grade).

Kukakala:Ra ≤ 0.2 nm (CMP kapena MP).

Kachulukidwe ka Micropipe (MPD):<1 ea/cm².

TTV: ≤ 10 μm pa ma diameter onse.

Warp: ≤ 30 μm (≤ 45 μm pa zowotcha za mainchesi 8).

Kupatula M'mphepete:3 mm mpaka 6 mm kutengera mtundu wawafesi.

Kuyika:Multi-wafer cassette kapena single wafer container.

Ohter kupezeka kukula 3inch 4inch 6inch 8inch

HPSI (Zophika za SiC za High Purity Semi-Insulating)

Ntchito:Amagwiritsidwa ntchito pazida zomwe zimafuna kukana kwambiri komanso magwiridwe antchito okhazikika, monga zida za RF, ma photonic applications, ndi masensa.

M'mimba mwake:50.8 mpaka 200 mm.

Makulidwe:Makulidwe okhazikika a 350 μm ± 25 μm okhala ndi zosankha zophatikizika zokhuthala mpaka 500 μm.

Kukakala:Ra ≤ 0.2 nm.

Kachulukidwe ka Micropipe (MPD): ≤1 ea/cm².

Kukaniza:Kukana kwakukulu, komwe kumagwiritsidwa ntchito popanga ma semi-insulating.

Warp: ≤ 30 μm (kwa makulidwe ang'onoang'ono), ≤ 45 μm kwa ma diameter akuluakulu.

TTV: ≤ 10 μm

Ohter kupezeka kukula 3inch 4inch 6inch 8inch

4H-P,6H-P&3C SiC chowotcha(P-mtundu wa SiC Wafers)

Ntchito:Makamaka pazida zamagetsi ndi zothamanga kwambiri.

M'mimba mwake:50.8 mpaka 200 mm.

Makulidwe:350 μm ± 25 μm kapena zosankha makonda.

Kukaniza:P-mtundu 4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω·cm (P-grade).

Kukakala:Ra ≤ 0.2 nm (CMP kapena MP).

Kachulukidwe ka Micropipe (MPD):<1 ea/cm².

TTV: ≤ 10 μm

Kupatula M'mphepete:3 mpaka 6 mm.

Warp: ≤ 30 μm kwa kukula kochepa, ≤ 45 μm kwa kukula kwakukulu.

Ohter kupezeka kukula 3inch 4inch 6inch5×5 10×10

Partial Data Parameters Table

Katundu	2 inchi		3 inchi		4 inchi	6 inchi	8 inchi
Mtundu	4H-N/HPSI/ 6H-N/4H/6H-P/3C;		4H-N/HPSI/ 6H-N/4H/6H-P/3C;		4H-N/HPSI//4H/6H-P/3C;	4H-N/HPSI//4H/6H-P/3C;	4H-N/HPSI/4H-SEMI
Diameter	50.8 ± 0.3 mm		76.2 ± 0.3mm		100 ± 0.3mm	150 ± 0.3mm	200 ± 0.3 mm
Makulidwe	330 ± 25 um		350 ± 25 um		350 ± 25 um	350 ± 25 um	350 ± 25 um
	350 ± 25um;		500 ± 25um		500 ± 25um	500 ± 25um	500 ± 25um
	kapena makonda		kapena makonda		kapena makonda	kapena makonda	kapena makonda
Ukali	Ra ≤ 0.2nm		Ra ≤ 0.2nm		Ra ≤ 0.2nm	Ra ≤ 0.2nm	Ra ≤ 0.2nm
Warp	≤30um		≤30um		≤30um	≤30um	≤45um
TTV	≤10um		≤10um		≤10um	≤10um	≤10um
Dig/Dig	CMP/MP
MPD	<1ea/cm-2	<1ea/cm-2		<1ea/cm-2		<1ea/cm-2		<1ea/cm-2
Maonekedwe	Kuzungulira, Lathyathyathya 16mm; OF kutalika 22mm; WA Utali 30 / 32.5mm; WA Utali 47.5mm; ZOTHANDIZA; ZOTHANDIZA;
Bevel	45 °, SEMI Spec; C mawonekedwe
Gulu	Kupanga kwa MOS&SBD; Gulu la kafukufuku; Dummy grade, Seed wafer Grade
Ndemanga	Diameter, Makulidwe, Kufotokozera, zomwe zili pamwambapa zitha kusinthidwa malinga ndi zomwe mukufuna

Mapulogalamu

·Zamagetsi Zamagetsi

Zowotcha zamtundu wa N za SiC ndizofunika kwambiri pazida zamagetsi zamagetsi chifukwa chotha kunyamula ma voliyumu apamwamba komanso apano. Amagwiritsidwa ntchito kwambiri posinthira magetsi, ma inverter, ndi ma drive amagalimoto kumafakitale monga mphamvu zongowonjezwdwanso, magalimoto amagetsi, ndi makina opanga mafakitale.

· Optoelectronics
Zida za SiC za mtundu wa N, makamaka zogwiritsira ntchito ma optoelectronic, zimagwiritsidwa ntchito pazida monga ma light-emitting diode (LED) ndi laser diode. Kutentha kwawo kwakukulu komanso kufalikira kwa bandgap kumawapangitsa kukhala abwino pazida za optoelectronic zogwira ntchito kwambiri.

·Mapulogalamu Otentha Kwambiri
4H-N 6H-N SiC zowotcha ndizoyenera kwambiri pazigawo zotentha kwambiri, monga masensa ndi zida zamagetsi zomwe zimagwiritsidwa ntchito muzamlengalenga, magalimoto, ndi ntchito zamafakitale komwe kutha kwa kutentha ndi kukhazikika pakutentha kokwera ndikofunikira.

·Zida za RF
4H-N 6H-N SiC wafers amagwiritsidwa ntchito pazida zamawayilesi (RF) zomwe zimagwira ntchito mosiyanasiyana. Amagwiritsidwa ntchito pamakina olankhulirana, ukadaulo wa radar, ndi kulumikizana kwa satelayiti, komwe kumafunikira mphamvu zambiri komanso magwiridwe antchito.

·Mapulogalamu a Photonic
Mu ma photonics, zowotcha za SiC zimagwiritsidwa ntchito pazida monga ma photodetectors ndi ma modulators. Zapadera zazinthuzo zimalola kuti zikhale zogwira mtima pakupanga kuwala, kusinthasintha, komanso kuzindikira mu makina olumikizirana owoneka bwino ndi zida zojambulira.

·Zomverera
Zophika za SiC zimagwiritsidwa ntchito m'masensa osiyanasiyana, makamaka m'malo ovuta pomwe zida zina zimatha kulephera. Izi zikuphatikiza kutentha, kupanikizika, ndi masensa amankhwala, omwe ndi ofunikira m'magawo monga magalimoto, mafuta & gasi, komanso kuwunika zachilengedwe.

·Magalimoto Oyendetsa Magalimoto Amagetsi
Ukadaulo wa SiC umagwira ntchito yayikulu pamagalimoto amagetsi pakuwongolera magwiridwe antchito komanso magwiridwe antchito amagalimoto. Ndi SiC power semiconductors, magalimoto amagetsi amatha kukhala ndi moyo wabwino wa batri, nthawi yothamangitsa mwachangu, komanso mphamvu zochulukirapo.

·Zomvera Zapamwamba ndi Zosintha za Photonic
Mu matekinoloje apamwamba a masensa, ma wafer a SiC amagwiritsidwa ntchito popanga masensa olondola kwambiri pama robotiki, zida zamankhwala, komanso kuyang'anira chilengedwe. Mu zosintha za Photonic, katundu wa SiC umagwiritsidwa ntchito kuti azitha kutembenuza mphamvu zamagetsi kukhala ma siginecha owoneka bwino, omwe ndi ofunikira pakulumikizana ndi matelefoni komanso makina othamanga kwambiri pa intaneti.

Q&A

Q: 4H mu 4H SiC ndi chiyani?
A: "4H" mu 4H SiC amatanthauza mawonekedwe a kristalo a silicon carbide, makamaka mawonekedwe a hexagonal okhala ndi zigawo zinayi (H). "H" imasonyeza mtundu wa hexagonal polytype, kusiyanitsa ndi ma polytypes ena a SiC monga 6H kapena 3C.

Q: Kodi matenthedwe madutsidwe wa 4H-SiC ndi chiyani?
A:Thermal conductivity ya 4H-SiC (Silicon Carbide) ndi pafupifupi 490-500 W/m·K kutentha firiji. Kutentha kwapamwamba kumeneku kumapangitsa kukhala koyenera kugwiritsidwa ntchito pamagetsi amagetsi ndi malo otentha kwambiri, kumene kutentha kwabwino kumakhala kofunikira.

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