8 inchi SiC pakachitsulo carbide mtanda 4H-N mtundu 0.5mm kupanga kalasi kafukufuku kalasi mwambo opukutidwa gawo lapansi

8 inchi SiC silikoni carbide chowotcha 4H-N mtundu 0.5mm kupanga kalasi kafukufuku kalasi mwambo opukutidwa gawo lapansi Featured Image

Kufotokozera Kwachidule:

Silicon carbide (SiC), yomwe imadziwikanso kuti silicon carbide, ndi semiconductor yokhala ndi silicon ndi kaboni yokhala ndi formula yamankhwala SiC. SiC imagwiritsidwa ntchito pazida zamagetsi za semiconductor zomwe zimagwira ntchito kutentha kwambiri kapena kupanikizika kwambiri, kapena zonse ziwiri. SiC ndi imodzi mwazinthu zofunika kwambiri za LED, ndi gawo lodziwika bwino pakukula kwa zida za GaN, ndipo itha kugwiritsidwanso ntchito ngati choyatsira kutentha kwa ma LED amphamvu kwambiri.
8-inch silicon carbide gawo lapansi ndi gawo lofunika kwambiri la m'badwo wachitatu wa zida zopangira semiconductor, zomwe zimakhala ndi mphamvu yakuwonongeka kwamunda, matenthedwe apamwamba, machulukidwe apamwamba a elekitironi, etc., ndipo ndi oyenera kupanga kutentha kwambiri, zida zamagetsi zamphamvu kwambiri komanso zamphamvu kwambiri. Minda yake yayikulu yogwiritsira ntchito imaphatikizapo magalimoto amagetsi, kuyenda kwa njanji, kutumiza ndi kusintha kwamphamvu kwamagetsi, photovoltaics, 5G mauthenga, kusungirako mphamvu, ndege, ndi AI core computing data centers.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zogulitsa Tags

Mbali zazikulu za 8-inch silicon carbide substrate 4H-N mtundu zikuphatikizapo:

1. Kuchulukana kwa Microtubule: ≤ 0.1/cm² kapena kutsika, monga kachulukidwe ka microtubule kumachepetsedwa kwambiri mpaka 0.05/cm² muzinthu zina.
2. Chiŵerengero cha mawonekedwe a Crystal: 4H-SiC mawonekedwe a kristalo amafika 100%.
3. Kukana: 0.014~0.028 Ω·cm, kapena kukhazikika pakati pa 0.015-0.025 Ω·cm.
4. Kuvuta kwa nkhope: CMP Si Face Ra≤0.12nm.
5. Makulidwe: Kawirikawiri 500.0±25μm kapena 350.0±25μm.
6. Chamfering angle: 25 ± 5 ° kapena 30 ± 5 ° kwa A1 / A2 malinga ndi makulidwe.
7. Total dislocation kachulukidwe: ≤3000/cm².
8. Kuwonongeka kwachitsulo pamwamba: ≤1E+11 maatomu/cm².
9. Kupindika ndi nkhondo: ≤ 20μm ndi ≤2μm, motero.
Makhalidwewa amapangitsa magawo a 8-inch silicon carbide kukhala ndi phindu lofunikira popanga zida zamagetsi zotentha kwambiri, zothamanga kwambiri, komanso zamphamvu kwambiri.

8inch silicon carbide wafer ili ndi ntchito zingapo.

1. Zipangizo zamagetsi: SiC wafers amagwiritsidwa ntchito kwambiri popanga zipangizo zamagetsi zamagetsi monga mphamvu MOSFETs (metal-oxide-semiconductor field-effect transistors), Schottky diodes, ndi ma modules ophatikiza mphamvu. Chifukwa cha kutentha kwapamwamba kwambiri, kutentha kwapamwamba kwambiri, ndi kuyenda kwa electron kwa SiC, zipangizozi zimatha kukwaniritsa bwino, kutembenuka kwamphamvu kwamphamvu kwambiri m'malo otentha kwambiri, othamanga kwambiri, komanso othamanga kwambiri.

2. Zida za Optoelectronic: Zophika za SiC zimagwira ntchito yofunika kwambiri pazida za optoelectronic, zomwe zimagwiritsidwa ntchito popanga photodetectors, laser diode, ultraviolet sources, etc. ma frequency apamwamba, komanso kuchuluka kwamphamvu kwamphamvu.

3. Zida za Radio Frequency (RF): Zida za SiC zimagwiritsidwanso ntchito popanga zipangizo za RF monga RF magetsi amplifiers, ma switch othamanga kwambiri, masensa a RF, ndi zina. Kukhazikika kwamafuta amtundu wa SiC, mawonekedwe othamanga kwambiri, komanso kutayika pang'ono kumapangitsa kuti ikhale yabwino kwa mapulogalamu a RF monga ma waya opanda zingwe ndi makina a radar.

4.Zamagetsi zotentha kwambiri: Chifukwa cha kukhazikika kwawo kwa kutentha ndi kutentha kwa kutentha, zowotcha za SiC zimagwiritsidwa ntchito popanga zinthu zamagetsi zomwe zimapangidwira kuti zizigwira ntchito m'madera otentha kwambiri, kuphatikizapo magetsi amphamvu kwambiri, masensa, ndi olamulira.

Njira zazikuluzikulu zogwiritsira ntchito 8-inch silicon carbide substrate 4H-N mtundu zimaphatikizapo kupanga zipangizo zamakono zotentha kwambiri, zothamanga kwambiri, komanso zamphamvu kwambiri, makamaka pamagetsi amagetsi, mphamvu ya dzuwa, mphamvu ya mphepo, magetsi. ma locomotives, ma seva, zida zapanyumba, ndi magalimoto amagetsi. Kuphatikiza apo, zida monga ma SiC MOSFETs ndi ma Schottky diode awonetsa ntchito yabwino kwambiri pakusintha ma frequency, kuyesa kwakanthawi kochepa, komanso kugwiritsa ntchito ma inverter, kuyendetsa ntchito yawo pamagetsi amagetsi.

XKH ikhoza kusinthidwa ndi makulidwe osiyanasiyana malinga ndi zomwe makasitomala amafuna. Zosiyanasiyana zamtundu wamtundu wamtundu ndi mankhwala opukuta zilipo. Mitundu yosiyanasiyana ya doping (monga nitrogen doping) imathandizidwa. XKH ikhoza kupereka chithandizo chaukadaulo ndi maupangiri ofunsira kuti awonetsetse kuti makasitomala amatha kuthana ndi mavuto pakagwiritsidwe ntchito. Gawo la 8-inch silicon carbide substrate lili ndi maubwino ambiri pakuchepetsa mtengo komanso kuchuluka kwa mphamvu, zomwe zitha kuchepetsa mtengo wa chipangizocho ndi pafupifupi 50% poyerekeza ndi gawo lapansi la 6-inch. Kuphatikiza apo, makulidwe owonjezereka a gawo lapansi la 8-inch amathandizira kuchepetsa kupotoza kwa geometrical ndi kupotoza m'mphepete panthawi yokonza, potero kumapangitsa zokolola.