8 inchi SiC silicon carbide wafer 4H-N mtundu 0.5mm kupanga kalasi yofufuza kalasi yopangidwa mwamakonda

8 inchi SiC silicon carbide wafer 4H-N mtundu 0.5mm kupanga kalasi yofufuzira kalasi yopangidwa mwamakonda Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Silicon carbide (SiC), yomwe imadziwikanso kuti silicon carbide, ndi semiconductor yokhala ndi silicon ndi carbon yokhala ndi formula ya mankhwala SiC. SiC imagwiritsidwa ntchito mu zipangizo zamagetsi za semiconductor zomwe zimagwira ntchito kutentha kwambiri kapena kupsinjika kwakukulu, kapena zonse ziwiri. SiC ndi chimodzi mwa zigawo zofunika kwambiri za LED, ndi gawo lofala kwambiri la zipangizo za GaN, ndipo ingagwiritsidwenso ntchito ngati chotenthetsera kutentha cha ma LED amphamvu kwambiri.
Chitsulo cha silicon carbide cha mainchesi 8 ndi gawo lofunika kwambiri la m'badwo wachitatu wa zipangizo za semiconductor, chomwe chili ndi makhalidwe a mphamvu ya field breakdown, kutentha kwambiri, kuchuluka kwa ma electron saturation drift rate, ndi zina zotero, ndipo ndi choyenera kupanga zipangizo zamagetsi zotentha kwambiri, zamagetsi amphamvu, komanso zamagetsi amphamvu kwambiri. Magawo ake akuluakulu ogwiritsira ntchito akuphatikizapo magalimoto amagetsi, sitima, kutumiza ndi kusintha kwa magetsi amphamvu kwambiri, photovoltaics, kulumikizana kwa 5G, kusungira mphamvu, ndege, ndi malo osungira deta ya mphamvu ya AI.

Tumizani imelo kwa ife

Mawonekedwe

Zinthu zazikulu za 8-inch silicon carbide substrate 4H-N ndi izi:

1. Kuchuluka kwa ma microtubule: ≤ 0.1/cm² kapena kutsika, monga kuchuluka kwa ma microtubule kumachepetsedwa kwambiri kufika pa 0.05/cm² muzinthu zina.
2. Chiŵerengero cha mawonekedwe a kristalo: Chiŵerengero cha mawonekedwe a kristalo cha 4H-SiC chimafika 100%.
3. Kukana: 0.014~0.028 Ω·cm, kapena yokhazikika kwambiri pakati pa 0.015-0.025 Ω·cm.
4. Kukhwima kwa pamwamba: CMP Si Face Ra≤0.12nm.
5. Kukhuthala: Kawirikawiri 500.0±25μm kapena 350.0±25μm.
6. Ngodya yolumikizira: 25±5° kapena 30±5° pa A1/A2 kutengera makulidwe.
7. Kuchuluka konse kwa dislocation: ≤3000/cm².
8. Kuipitsidwa ndi zitsulo pamwamba: ≤1E+11 maatomu/cm².
9. Kupindika ndi kupotoza: ≤ 20μm ndi ≤2μm, motsatana.
Makhalidwe amenewa amachititsa kuti ma substrates a silicon carbide a mainchesi 8 akhale ndi phindu lofunika kwambiri popanga zipangizo zamagetsi zotentha kwambiri, zamafupipafupi, komanso zamagetsi amphamvu kwambiri.

Wafer wa silicon carbide wa mainchesi 8 umagwiritsidwa ntchito m'njira zingapo.

1. Zipangizo zamagetsi: Ma wafer a SiC amagwiritsidwa ntchito kwambiri popanga zipangizo zamagetsi zamagetsi monga ma MOSFET amphamvu (metal-oxide-semiconductor field-effect transistors), ma Schottky diode, ndi ma module ophatikiza mphamvu. Chifukwa cha kutentha kwakukulu, magetsi owonongeka kwambiri, komanso kuyenda kwa ma electron ambiri a SiC, zipangizozi zimatha kusintha mphamvu moyenera komanso mogwira mtima m'malo otentha kwambiri, amphamvu kwambiri, komanso okhala ndi ma frequency ambiri.

2. Zipangizo zamagetsi: Ma wafer a SiC amagwira ntchito yofunika kwambiri pazipangizo zamagetsi zamagetsi, zomwe zimagwiritsidwa ntchito popanga ma photodetector, ma laser diode, magwero a ultraviolet, ndi zina zotero. Kapangidwe kabwino ka silicon carbide kowala ndi kamagetsi kamapangitsa kuti ikhale chinthu chosankhidwa, makamaka pakugwiritsa ntchito komwe kumafuna kutentha kwambiri, ma frequency okwera, komanso mphamvu zambiri.

3. Zipangizo za Ma Radio Frequency (RF): Ma chips a SiC amagwiritsidwanso ntchito popanga zipangizo za RF monga ma amplifiers amphamvu a RF, ma switch apamwamba, masensa a RF, ndi zina zambiri. Kukhazikika kwa kutentha kwa SiC, mawonekedwe apamwamba a ma frequency, komanso kutayika kochepa kumapangitsa kuti ikhale yoyenera kugwiritsa ntchito ma RF monga mauthenga opanda zingwe ndi machitidwe a radar.

4. Zipangizo zamagetsi zotentha kwambiri: Chifukwa cha kukhazikika kwawo kutentha kwambiri komanso kusinthasintha kwa kutentha, ma wafer a SiC amagwiritsidwa ntchito popanga zinthu zamagetsi zomwe zimapangidwa kuti zizigwira ntchito m'malo otentha kwambiri, kuphatikizapo zamagetsi zamagetsi, masensa, ndi owongolera kutentha kwambiri.

Njira zazikulu zogwiritsira ntchito za silicon carbide substrate ya mainchesi 8 ya 4H-N zikuphatikizapo kupanga zipangizo zamagetsi zotentha kwambiri, zamafupipafupi, komanso zamagetsi, makamaka m'magawo a zamagetsi zamagalimoto, mphamvu ya dzuwa, kupanga mphamvu ya mphepo, magalimoto amagetsi, ma seva, zida zapakhomo, ndi magalimoto amagetsi. Kuphatikiza apo, zipangizo monga SiC MOSFETs ndi Schottky diodes zawonetsa magwiridwe antchito abwino kwambiri mu ma frequency osinthira, kuyesa kwafupipafupi, ndi kugwiritsa ntchito ma inverter, zomwe zimapangitsa kuti zigwiritsidwe ntchito mu zamagetsi zamagetsi.

XKH ikhoza kusinthidwa kukhala makulidwe osiyanasiyana malinga ndi zosowa za makasitomala. Pali njira zosiyanasiyana zoyeretsera pamwamba ndi kupukuta. Mitundu yosiyanasiyana ya doping (monga nitrogen doping) imathandizidwa. XKH ikhoza kupereka chithandizo chaukadaulo ndi ntchito zolangiza kuti zitsimikizire kuti makasitomala amatha kuthetsa mavuto pakugwiritsa ntchito. Substrate ya silicon carbide ya mainchesi 8 ili ndi zabwino zambiri pankhani yochepetsa ndalama komanso mphamvu yowonjezera, zomwe zitha kuchepetsa mtengo wa unit chip ndi pafupifupi 50% poyerekeza ndi substrate ya mainchesi 6. Kuphatikiza apo, makulidwe owonjezereka a substrate ya mainchesi 8 amathandiza kuchepetsa kupotoka kwa geometrical ndi kupotoka kwa m'mphepete panthawi yopangira, motero kumawonjezera phindu.