Pansi pa nthaka
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InSb wafer 2inch 3inch undoped Ntype P type orientation 111 100 ya Infrared Detectors
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Ma wafer a Indium Antimonide (InSb) Mtundu wa N mtundu wa P Epi wokonzeka kusinthidwa Te doped kapena Ge doped 2inch 3inch 4inch makulidwe Indium Antimonide (InSb) ma wafer
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mtundu 2inch 3inch 4inch 6inch 8inch
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njira ya safiro ingot 3inch 4inch 6inch Monocrystal CZ KY Yosinthika
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2 inchi Sic silicon carbide substrate 6H-N Mtundu 0.33mm 0.43mm kupukuta mbali ziwiri Kutentha kwakukulu kugwiritsa ntchito mphamvu zochepa
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GaAs high-power epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yochizira matenda a laser
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GaAs laser epitaxial wafer 4 inchi 6 inchi VCSEL vertical cavity surface emission laser wavelength 940nm single junction
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Chowunikira kuwala cha APD cha 2inch 3inch 4inch InP epitaxial wafer substrate cha fiber optic communications kapena LiDAR
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Mphete ya safiro yopangidwa ndi zinthu zopangidwa ndi safiro Kuuma kwa Mohs kowonekera komanso kosinthika kwa 9
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mphete ya safiro yokhala ndi mphete ya safiro yopangidwa kwathunthu kuchokera ku safiro Zinthu zopangidwa ndi safiro zopangidwa ndi labu
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Sapphire ingot dia 4inch× 80mm Monocrystalline Al2O3 99.999% Single Crystal
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Sapphire Prism Sapphire Lens Yowonekera Kwambiri Al2O3 BK7 JGS1 JGS2 Chida Chowunikira Zinthu