Gawo lapansi
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Indium Antimonide (InSb) zopyapyala N mtundu P mtundu Epi wokonzeka undoped Te doped kapena Ge doped 2inch 3inch 4inch makulidwe Indium Antimonide (InSb) zopyapyala
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mtundu 2inch 3inch 4inch 6inch 8inch
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safiro ingot 3inch 4inch 6inch Monocrystal CZ KY njira Customizable
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GaAs high-power epitaxial wafer gawo lapansi gallium arsenide wafer mphamvu laser wavelength 905nm kwa laser chithandizo
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GaAs laser epitaxial wafer 4 inchi 6 inchi VCSEL ofukula patsekeke pamwamba kutulutsa laser wavelength 940nm limodzi mphambano
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2inch 3inch 4inch InP epitaxial wafer substrate APD chowunikira kuwala kwa fiber optic communications kapena LiDAR
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mphete ya safiro yopangidwa ndi zinthu zopangidwa ndi safiro Zowoneka bwino komanso zosinthika makonda a Mohs 9
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2 inchi Sic silicon carbide gawo lapansi 6H-N Mtundu 0.33mm 0.43mm mbali ziwiri kupukuta Kutentha kwapamwamba kugwiritsira ntchito mphamvu zochepa
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mphete ya safiro yopangidwa ndi safiro yopangidwa ndi safiro Transparent labu yopangidwa ndi safiro
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Sapphire ingot dia 4inch×80mm Monocrystalline Al2O3 99.999% Single Crystal
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Sapphire Prism Sapphire Lens High transparency Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
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SiC gawo lapansi 3inch 350um makulidwe HPSI mtundu Prime Grade Dummy kalasi