Chowunikira kuwala cha APD cha 2inch 3inch 4inch InP epitaxial wafer substrate cha fiber optic communications kapena LiDAR

Kufotokozera Kwachidule:

InP epitaxial substrate ndiye maziko opangira APD, nthawi zambiri imakhala semiconductor material yomwe imayikidwa pa substrate pogwiritsa ntchito ukadaulo wa epitaxial growth. Zinthu zomwe zimagwiritsidwa ntchito kwambiri ndi monga silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), ndi zina zotero, zomwe zimakhala ndi mphamvu zabwino kwambiri zamagetsi. Chowunikira zithunzi cha APD ndi mtundu wapadera wa chowunikira zithunzi chomwe chimagwiritsa ntchito mphamvu ya kuwala kwa dzuwa kuti chiwonjezere chizindikiro chozindikira. Ma photon akachitika pa APD, ma electron-hole awiri amapangidwa. Kuthamanga kwa zonyamulirazi pansi pa mphamvu yamagetsi kungayambitse kupanga zonyamulira zambiri, "mphamvu ya kuwala kwa dzuwa", zomwe zimakulitsa kwambiri mphamvu yotulutsa.
Ma wafer a Epitaxial omwe amalimidwa ndi MOCvD ndi omwe amagwiritsidwa ntchito kwambiri pofufuza ma avalanche photodetection diode. Gawo loyamwa la avalanche linakonzedwa ndi zinthu za U-InGaAs zokhala ndi background doping <5E14. Gawo logwira ntchito lingagwiritse ntchito InP kapena InAlAslayer. InP epitaxial substrate ndiye chinthu chofunikira kwambiri popanga APD, chomwe chimatsimikizira momwe chowunikira cha kuwala chimagwirira ntchito. Chowunikira cha APD ndi mtundu wa chowunikira cha photosensitive high sensitivity, chomwe chimagwiritsidwa ntchito kwambiri pakulankhulana, kuzindikira, ndi kujambula zithunzi.

Tumizani imelo kwa ife

Mawonekedwe

Zinthu zofunika kwambiri pa pepala la InP laser epitaxial ndi izi:

1. Makhalidwe a mpata wa band: InP ili ndi mpata wopapatiza wa band, womwe ndi woyenera kuzindikira kuwala kwa infrared kwa mafunde aatali, makamaka pamlingo wa wavelength wa 1.3μm mpaka 1.5μm.
2. Kugwira ntchito kwa kuwala: Filimu ya InP epitaxial ili ndi magwiridwe antchito abwino a kuwala, monga mphamvu yowala komanso mphamvu yakunja ya quantum pamafunde osiyanasiyana. Mwachitsanzo, pa 480 nm, mphamvu yowala ndi mphamvu yakunja ya quantum ndi 11.2% ndi 98.8%, motsatana.
3. Kusintha kwa kayendedwe ka zinthu zonyamula: Ma nanoparticles a InP (NPs) amasonyeza khalidwe la kuwonongeka kawiri panthawi ya kukula kwa epitaxial. Nthawi yofulumira ya kuwonongeka imayambitsidwa ndi kulowetsedwa kwa zinthu zonyamula mu gawo la InGaAs, pomwe nthawi yochedwa ya kuwonongeka imakhudzana ndi kubwereranso kwa zinthu zonyamula mu InP NPs.
4. Makhalidwe a kutentha kwambiri: Chitsime cha AlGaInAs/InP quantum chili ndi magwiridwe antchito abwino kwambiri kutentha kwambiri, zomwe zingalepheretse kutuluka kwa madzi m'mitsinje ndikukweza mawonekedwe a kutentha kwambiri kwa laser.
5. Njira Yopangira: Mapepala a InP epitaxial nthawi zambiri amalimidwa pa substrate pogwiritsa ntchito ukadaulo wa molecular beam epitaxy (MBE) kapena metal-organic chemical vapor deposition (MOCVD) kuti apeze mafilimu apamwamba kwambiri.
Makhalidwe amenewa amachititsa kuti ma wafer a InP laser epitaxial akhale ndi ntchito zofunika kwambiri polankhulana ndi ulusi wa optical, kugawa makiyi a quantum komanso kuzindikira kuwala kwakutali.

Ntchito zazikulu za mapiritsi a InP laser epitaxial ndi monga

1. Photonics: Ma laser ndi zozindikira za InP zimagwiritsidwa ntchito kwambiri mu kulumikizana kwa optical, malo osungira deta, kujambula kwa infrared, biometrics, 3D sensing ndi LiDAR.

2. Kulankhulana: Zipangizo za InP zili ndi ntchito zofunika kwambiri pakuphatikiza kwakukulu kwa ma laser a kutalika kwa mafunde okhala ndi silicon, makamaka pakulankhulana kwa ulusi wa kuwala.

3. Ma laser a infrared: Kugwiritsa ntchito ma laser a quantum well omwe ali mu InP mu gulu la mid-infrared (monga ma microns 4-38), kuphatikizapo kuzindikira mpweya, kuzindikira kuphulika ndi kujambula kwa infrared.

4. Silicon photonics: Kudzera mu ukadaulo wosiyanasiyana wophatikiza, laser ya InP imasamutsidwira ku substrate yochokera ku silicon kuti ipange nsanja yolumikizira ya silicon optoelectronic yogwira ntchito zambiri.

5. Ma laser opambana kwambiri: Zipangizo za InP zimagwiritsidwa ntchito popanga ma laser opambana kwambiri, monga ma laser a transistor a InGaAsP-InP okhala ndi kutalika kwa ma microns 1.5.

XKH imapereka ma wafer a InP epitaxial opangidwa mwamakonda okhala ndi kapangidwe ndi makulidwe osiyanasiyana, omwe amagwiritsa ntchito ntchito zosiyanasiyana monga kulumikizana kwa kuwala, masensa, malo oyambira a 4G/5G, ndi zina zotero. Zogulitsa za XKH zimapangidwa pogwiritsa ntchito zida zapamwamba za MOCVD kuti zitsimikizire kuti zikugwira ntchito bwino komanso kudalirika. Ponena za kayendetsedwe ka zinthu, XKH ili ndi njira zambiri zoyambira padziko lonse lapansi, imatha kuthana ndi kuchuluka kwa maoda mosavuta, ndikupereka ntchito zowonjezera monga kuchepetsa, kugawa, ndi zina zotero. Njira zotumizira bwino zimatsimikizira kutumiza pa nthawi yake ndikukwaniritsa zofunikira za makasitomala kuti zikhale zabwino komanso nthawi yotumizira. Makasitomala akafika, amatha kupeza chithandizo chokwanira chaukadaulo ndi ntchito yogulitsa pambuyo pogulitsa kuti atsimikizire kuti malondawo agwiritsidwa ntchito bwino.