Gawo lapansi
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Silicon Carbide SiC Ingot 6inch N mtundu Dummy/prime grade makulidwe akhoza ba makonda
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SiC Ingot 4H-N mtundu Dummy kalasi 2inch 3inch 4inch 6inch makulidwe:＞10mm
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HPSI SiC wafer dia:3inch makulidwe:350um± 25µm kwa Power Electronics
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3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
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Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Wopukutidwa Pawiri Wopanga kalasi ya Mos
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2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Gulu Dummy Gulu 330μm 430μm Makulidwe
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2inch silicon carbide gawo lapansi 6H-N awiri amaganiza opukutidwa awiri 50.8mm kupanga kalasi kafukufuku kalasi
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p-mtundu 4H/6H-P 3C-N TYPE SIC gawo lapansi 4inch 〈111〉± 0.5°Ziro MPD
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SiC gawo lapansi P-mtundu 4H/6H-P 3C-N 4inch makulidwe a 350um Kupanga kalasi Dummy kalasi
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4H/6H-P 6inch SiC wafer Zero MPD kalasi Kupanga Gulu Dummy Kalasi
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P-mtundu wa SiC 4H/6H-P 3C-N 6inch makulidwe 350 μm okhala ndi Primary Flat Oriental