Pansi pa nthaka
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Chitsulo cha silicon carbide cha mainchesi 12 cha SIC chokhala ndi mainchesi 300mm chachikulu kukula kwake 4H-N Choyenera kutenthetsa kutentha kwa chipangizo champhamvu kwambiri
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Dia300x1.0mmt Kunenepa kwa Sapphire Wafer C-Plane SSP/DSP
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HPSI SiC wafer dia: 3inch makulidwe: 350um ± 25 µm ya Power Electronics
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Chipinda chofewa cha safiro cha mainchesi 8 cha 200mm makulidwe opyapyala 1SP 2SP 0.5mm 0.75mm
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8 inchi SiC silicon carbide wafer 4H-N mtundu 0.5mm kupanga kalasi yofufuza kalasi yopangidwa mwamakonda
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Ma wafer a safiro a kristalo imodzi 99.999% Dia200mm 1.0mm 0.75mm makulidwe
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Chophikira cha Sapphire cha mainchesi 156mm 159mm cha mainchesi 6 cha C-Plane DSP TTV chonyamulira
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C/A/M axis 4 inch safiro wafers single crystal Al2O3, SSP DSP high hardness safiro substrate
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3inch High purify Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch yatsopano
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Ma Wafers a Silicon Carbide a SiC a mainchesi 8 a 200mm 4H-N mtundu wa Kupanga kalasi 500um makulidwe
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Giredi Mos Giredi