8inch 200mm Silicon Carbide SiC Wafers 4H-N mtundu Kupanga kalasi 500um makulidwe

Kufotokozera Kwachidule:

Shanghai Xinkehui Tech.Co., Ltd imapereka zosankha zabwino kwambiri komanso mitengo yamafuta apamwamba kwambiri a silicon carbide ndikuyika magawo mpaka mainchesi 8 okhala ndi mitundu ya N- ndi theka-insulating.Makampani ang'onoang'ono ndi akuluakulu a zida za semiconductor ndi ma labu ofufuza padziko lonse lapansi akugwiritsa ntchito ndikudalira zowotcha zathu za silicone carbide.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

200mm 8inch SiC Substrate Kufotokozera

Kukula: 8inch;

awiri: 200mm ± 0.2;

makulidwe: 500um ± 25;

Kuyang'ana Pamwamba: 4 ku [11-20] ± 0.5 °;

Kuwongolera kwa notch: [1-100] ± 1 °;

Kuzama kwa notch: 1 ± 0.25mm;

Chipaipi: <1cm2;

Mimba ya Hex: Palibe Yololedwa;

Kukana: 0.015 ~ 0.028Ω;

EPD: <8000cm2;

TED: <6000cm2

BPD: <2000cm2

TSD: <1000cm2

SF: dera<1%

TTV≤15um

Warp≤40um

Bow ≤25um;

Madera a Poly: ≤5%;

Zoyamba: <5 ndi Utali Wokwanira< 1 Wafer Diameter;

Chips/Indents: Palibe chilolezo D> 0.5mm M'lifupi ndi Kuzama;

Ming’alu: Palibe;

Stain: Palibe

Mphepete mwa mtanda: Chamfer;

Kutsiliza pamwamba: Pawiri Mbali Polish, Si Face CMP;

Kulongedza: Makaseti amitundu yopyapyala Kapena Chidebe Chowotcha Chokha;

Mavuto omwe alipo pokonzekera makhiristo a 200mm 4H-SiC mainl

1) Kukonzekera kwa makhiristo apamwamba a 200mm 4H-SiC;

2) Large kukula kutentha munda sanali ofanana ndi nucleation ndondomeko kulamulira;

3) Kuyendetsa bwino komanso kusinthika kwa magawo a mpweya mu makina okulirapo a kristalo;

4) Kusweka kwa kristalo ndi kuchuluka kwa chilema komwe kumachitika chifukwa chakuwonjezeka kwakukulu kwamafuta.

Kuti mugonjetse zovutazi ndikupeza mayankho apamwamba a 200mm SiC aperekedwa:

Pankhani ya kukonzekera kwa kristalo ya mbeu ya 200mm, gawo loyenera la kutentha kwamunda, ndi msonkhano wokulirakulira unaphunziridwa ndipo adapangidwa kuti aziganizira zamtundu wa kristalo ndi kukula kwake;Kuyambira ndi 150mm SiC se:d kristalo, gwiritsani ntchito kristalo wa mbewu kuti muwonjezere pang'onopang'ono SiC crystasize mpaka ifike 200mm;Kupyolera mu kukula kwa kristalo ndi processiig, kukhathamiritsa pang'onopang'ono mtundu wa kristalo m'dera lomwe likukulirakulira, ndikuwongolera mtundu wa 200mm makhiristo ambewu.

Pankhani ya 200mm conductive crystal ndi substrate kukonzekera, kafukufuku wakonza kutentha kwa kutentha ndi kayendedwe kake ka kukula kwa crystalgrowth, kuchititsa kukula kwa kristalo wa 200mm wa SiC, ndikuwongolera kufanana kwa doping.Pambuyo pokonza movutikira ndi kupangidwa kwa kristalo, 8-inchelectricaly conductive 4H-SiC ingot yokhala ndi mainchesi okhazikika idapezedwa.Pambuyo kudula, akupera, kupukuta, processing kupeza SiC 200mm wafers ndi makulidwe a 525um kapena choncho.