4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer ya MOS kapena SBD
Chidule cha SiC Substrate SiC Epi-wafer
Timapereka mndandanda wonse wa ma substrates apamwamba a SiC ndi ma wafers a sic mu mitundu yosiyanasiyana ya polytypes ndi ma doping profiles—kuphatikizapo 4H-N (n-type conductive), 4H-P (p-type conductive), 4H-HPSI (high-purity semi-insulating), ndi 6H-P (p-type conductive)—mu diameters kuyambira 4″, 6″, ndi 8″ mpaka 12″. Kupatula ma substrates opanda kanthu, ntchito zathu zokulitsa epi wafer zimapereka ma epitaxial (epi) wafers okhala ndi makulidwe olamulidwa bwino (1–20 µm), kuchuluka kwa doping, ndi kuchuluka kwa zolakwika.
Chikwama chilichonse cha sic wafer ndi epi wafer chimayesedwa mwamphamvu (micropipe density <0.1 cm⁻², surface roughness Ra <0.2 nm) ndi full electrical characterization (CV, resistivity mapping) kuti zitsimikizire kufanana kwapadera kwa kristalo ndi magwiridwe antchito. Kaya zimagwiritsidwa ntchito pa ma module amagetsi amphamvu, ma RF amplifier apamwamba, kapena zida zamagetsi (ma LED, ma photodetector), mizere yathu ya SiC substrate ndi epi wafer imapereka kudalirika, kukhazikika kwa kutentha, ndi mphamvu yosweka yomwe ikufunika ndi ntchito zovuta kwambiri masiku ano.
Kapangidwe ka mtundu wa SiC Substrate 4H-N ndi momwe imagwiritsidwira ntchito
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Kapangidwe ka 4H-N SiC substrate Polytype (Hexagonal)
Kuchuluka kwa bandgap ya ~3.26 eV kumatsimikizira kuti magetsi amagwira ntchito bwino komanso kuti kutentha kukhale kolimba pakakhala kutentha kwambiri komanso magetsi ambiri.
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SiC substrateKuchepetsa Mankhwala Osokoneza Bongo a Mtundu wa N
Kuchuluka kwa nayitrogeni komwe kumayendetsedwa bwino kumabweretsa kuchuluka kwa ma carrier kuyambira 1×10¹⁶ mpaka 1×10¹⁹ cm⁻³ ndi kuyenda kwa ma elekitironi kutentha kwa chipinda mpaka ~900 cm²/V·s, kuchepetsa kutayika kwa conduction.
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SiC substrateKukana Kwambiri & Kufanana
Kupezeka kwa resistivity range ya 0.01–10 Ω·cm ndi makulidwe a wafer a 350–650 µm okhala ndi ±5% tolerance mu doping ndi makulidwe onse—abwino kwambiri popanga zipangizo zamphamvu kwambiri.
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SiC substrateKuchulukana kwa chilema chotsika kwambiri
Kuchuluka kwa ma micropipe < 0.1 cm⁻² ndi kuchuluka kwa dislocation ya basal-plane < 500 cm⁻², zomwe zimapangitsa kuti chipangizocho chikhale ndi mphamvu yoposa 99% komanso kuti chikhale cholimba kwambiri.
- SiC substrateKutentha Kwambiri Kwambiri
Kutulutsa kutentha mpaka ~370 W/m·K kumathandiza kuchotsa kutentha bwino, kukulitsa kudalirika kwa chipangizocho komanso kuchuluka kwa mphamvu.
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SiC substrateMapulogalamu Oyenera
Ma SiC MOSFET, ma Schottky diode, ma power module ndi zida za RF zamagalimoto amagetsi, ma solar inverters, ma industrial drive, ma traction system, ndi misika ina yamagetsi yamagetsi yomwe imafuna ndalama zambiri.
Mafotokozedwe a SiC wafer a 6inch 4H-N | ||
| Katundu | Giredi Yopanga ya Zero MPD (Giredi Z) | Giredi Yosamveka (Giredi D) |
| Giredi | Giredi Yopanga ya Zero MPD (Giredi Z) | Giredi Yosamveka (Giredi D) |
| M'mimba mwake | 149.5 mm - 150.0 mm | 149.5 mm - 150.0 mm |
| Mtundu wa poly | 4H | 4H |
| Kukhuthala | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Kuwongolera kwa Wafer | Mzere wotsekedwa: 4.0° kulowera <1120> ± 0.5° | Mzere wotsekedwa: 4.0° kulowera <1120> ± 0.5° |
| Kuchuluka kwa mapaipi ang'onoang'ono | ≤ 0.2 cm² | ≤ 15 cm² |
| Kusakhazikika | 0.015 - 0.024 Ω·cm | 0.015 - 0.028 Ω·cm |
| Kuyang'ana Kwambiri Pang'onopang'ono | [10-10] ± 50° | [10-10] ± 50° |
| Utali Woyamba Wathyathyathya | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Kupatula Mphepete | 3 mm | 3 mm |
| LTV/TIV / Uta / Kupindika | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Kuuma | Polish Ra ≤ 1 nm | Polish Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Ming'alu ya Mphepete Yopangidwa ndi Kuwala Kwakukulu Kwambiri | Kutalika kokwanira ≤ 20 mm kutalika kamodzi ≤ 2 mm | Kutalika kokwanira ≤ 20 mm kutalika kamodzi ≤ 2 mm |
| Mbale za Hex Ndi Kuwala Kwakukulu Kwambiri | Malo osonkhanitsidwa ≤ 0.05% | Malo osonkhanitsidwa ≤ 0.1% |
| Malo Opangidwa ndi Polytype Ndi Kuwala Kwambiri | Malo osonkhanitsidwa ≤ 0.05% | Malo osonkhanitsidwa ≤ 3% |
| Kuphatikizidwa kwa Kaboni Yowoneka | Malo osonkhanitsidwa ≤ 0.05% | Malo osonkhanitsidwa ≤ 5% |
| Kukanda kwa Silicon Pamwamba Ndi Kuwala Kwambiri | Kutalika kokwanira ≤ 1 wafer m'mimba mwake | |
| Ma Chips a M'mphepete Ndi Kuwala Kwakukulu Kwambiri | Palibe chololedwa ≥ m'lifupi ndi kuya kwa 0.2 mm | 7 zololedwa, ≤ 1 mm iliyonse |
| Kutulutsa Ulusi wa Screw | < 500 cm³ | < 500 cm³ |
| Kuipitsidwa kwa Silicon pamwamba ndi Kuwala Kwambiri | ||
| Kulongedza | Kaseti Yokhala ndi Ma Wafer Ambiri Kapena Chidebe Chimodzi Chokhala ndi Ma Wafer | Kaseti Yokhala ndi Ma Wafer Ambiri Kapena Chidebe Chimodzi Chokhala ndi Ma Wafer |
Mafotokozedwe a 8inch 4H-N SiC wafer | ||
| Katundu | Giredi Yopanga ya Zero MPD (Giredi Z) | Giredi Yosamveka (Giredi D) |
| Giredi | Giredi Yopanga ya Zero MPD (Giredi Z) | Giredi Yosamveka (Giredi D) |
| M'mimba mwake | 199.5 mm - 200.0 mm | 199.5 mm - 200.0 mm |
| Mtundu wa poly | 4H | 4H |
| Kukhuthala | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Kuwongolera kwa Wafer | 4.0° kulowera <110> ± 0.5° | 4.0° kulowera <110> ± 0.5° |
| Kuchuluka kwa mapaipi ang'onoang'ono | ≤ 0.2 cm² | ≤ 5 cm² |
| Kusakhazikika | 0.015 - 0.025 Ω·cm | 0.015 - 0.028 Ω·cm |
| Kuyang'ana Kwabwino | ||
| Kupatula Mphepete | 3 mm | 3 mm |
| LTV/TIV / Uta / Kupindika | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Kuuma | Polish Ra ≤ 1 nm | Polish Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Ming'alu ya Mphepete Yopangidwa ndi Kuwala Kwakukulu Kwambiri | Kutalika kokwanira ≤ 20 mm kutalika kamodzi ≤ 2 mm | Kutalika kokwanira ≤ 20 mm kutalika kamodzi ≤ 2 mm |
| Mbale za Hex Ndi Kuwala Kwakukulu Kwambiri | Malo osonkhanitsidwa ≤ 0.05% | Malo osonkhanitsidwa ≤ 0.1% |
| Malo Opangidwa ndi Polytype Ndi Kuwala Kwambiri | Malo osonkhanitsidwa ≤ 0.05% | Malo osonkhanitsidwa ≤ 3% |
| Kuphatikizidwa kwa Kaboni Yowoneka | Malo osonkhanitsidwa ≤ 0.05% | Malo osonkhanitsidwa ≤ 5% |
| Kukanda kwa Silicon Pamwamba Ndi Kuwala Kwambiri | Kutalika kokwanira ≤ 1 wafer m'mimba mwake | |
| Ma Chips a M'mphepete Ndi Kuwala Kwakukulu Kwambiri | Palibe chololedwa ≥ m'lifupi ndi kuya kwa 0.2 mm | 7 zololedwa, ≤ 1 mm iliyonse |
| Kutulutsa Ulusi wa Screw | < 500 cm³ | < 500 cm³ |
| Kuipitsidwa kwa Silicon pamwamba ndi Kuwala Kwambiri | ||
| Kulongedza | Kaseti Yokhala ndi Ma Wafer Ambiri Kapena Chidebe Chimodzi Chokhala ndi Ma Wafer | Kaseti Yokhala ndi Ma Wafer Ambiri Kapena Chidebe Chimodzi Chokhala ndi Ma Wafer |
4H-SiC ndi chinthu chogwira ntchito kwambiri chomwe chimagwiritsidwa ntchito pa zamagetsi zamagetsi, zida za RF, ndi ntchito zotentha kwambiri. "4H" ikutanthauza kapangidwe ka kristalo, komwe kali ndi mbali ya hexagonal, ndipo "N" imasonyeza mtundu wa doping womwe umagwiritsidwa ntchito kukonza magwiridwe antchito a chinthucho.
The4H-SiCMtunduwu umagwiritsidwa ntchito kwambiri pa:
Zamagetsi Zamagetsi:Amagwiritsidwa ntchito mu zipangizo monga ma diode, ma MOSFET, ndi ma IGBT pamagetsi amagetsi a magalimoto, makina amafakitale, ndi makina amagetsi obwezerezedwanso.
Ukadaulo wa 5G:Popeza 5G ikufuna zida zamagetsi zamagetsi zomwe zimagwira ntchito pafupipafupi komanso zogwira ntchito bwino, kuthekera kwa SiC kugwira ntchito ndi magetsi amphamvu komanso kutentha kwambiri kumapangitsa kuti ikhale yoyenera kwambiri pa ma amplifiers amphamvu a base station ndi zida za RF.
Machitidwe a Mphamvu ya Dzuwa:Mphamvu zabwino kwambiri zoyendetsera mphamvu za SiC ndizoyenera kwambiri kwa ma inverter ndi ma converter a photovoltaic (mphamvu ya dzuwa).
Magalimoto Amagetsi (ma EV):SiC imagwiritsidwa ntchito kwambiri mu ma electropowertrains kuti isinthe mphamvu bwino, ipange kutentha pang'ono, komanso ipange mphamvu zambiri.
Kapangidwe ka SiC Substrate 4H Semi-Insulating ndi kagwiritsidwe ntchito
Katundu:
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Njira zowongolera kuchulukana kwa anthu opanda ma micropipe: Zimaonetsetsa kuti palibe ma micropipes, zomwe zimapangitsa kuti nthaka ikhale yabwino.
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Njira zowongolera za monocrystalline: Chimatsimikizira kapangidwe ka kristalo kamodzi ka zinthu zowonjezeredwa.
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Njira zowongolera zinthu zomwe zaphatikizidwa: Amachepetsa kupezeka kwa zinyalala kapena zinthu zina, zomwe zimapangitsa kuti pakhale malo oyera.
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Njira zowongolera kukana: Zimalola kuwongolera molondola mphamvu yamagetsi, zomwe ndizofunikira kwambiri pakugwira ntchito kwa chipangizocho.
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Njira zowongolera ndi kulamulira zodetsa: Amalamulira ndikuletsa kulowetsedwa kwa zinyalala kuti asunge umphumphu wa substrate.
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Njira zowongolera m'lifupi mwa sitepe ya substrate: Amapereka ulamuliro wolondola pa kukula kwa sitepe, kuonetsetsa kuti zinthu zonse zikugwirizana
6Inch 4H-semi SiC substrate specifications | ||
| Katundu | Giredi Yopanga ya Zero MPD (Giredi Z) | Giredi Yosamveka (Giredi D) |
| M'mimba mwake (mm) | 145 mm - 150 mm | 145 mm - 150 mm |
| Mtundu wa poly | 4H | 4H |
| Kukhuthala (um) | 500 ± 15 | 500 ± 25 |
| Kuwongolera kwa Wafer | Pa mzere: ± 0.0001° | Pa axis: ± 0.05° |
| Kuchuluka kwa mapaipi ang'onoang'ono | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Kukana (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Kuyang'ana Kwambiri Pang'onopang'ono | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Utali Woyamba Wathyathyathya | Chingwe | Chingwe |
| Kuchotsera Mphepete (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Bowl / Warp | ≤ 3 µm | ≤ 3 µm |
| Kuuma | Polish Ra ≤ 1.5 µm | Polish Ra ≤ 1.5 µm |
| Ma Chips a M'mphepete Ndi Kuwala Kwakukulu Kwambiri | ≤ 20 µm | ≤ 60 µm |
| Mbale Zotenthetsera Ndi Kuwala Kwakukulu Kwambiri | Zosonkhanitsidwa ≤ 0.05% | Zosonkhanitsidwa ≤ 3% |
| Malo Opangidwa ndi Polytype Ndi Kuwala Kwambiri | Kuphatikizidwa kwa Kaboni Yowoneka ≤ 0.05% | Zosonkhanitsidwa ≤ 3% |
| Kukanda kwa Silicon Pamwamba Ndi Kuwala Kwambiri | ≤ 0.05% | Zosonkhanitsidwa ≤ 4% |
| Ma Edge Chips Ndi High Intensity Light (Kukula) | Sizololedwa > 02 mm M'lifupi ndi Kuzama | Sizololedwa > 02 mm M'lifupi ndi Kuzama |
| Kutsegula kwa Screw Yothandiza | ≤ 500 µm | ≤ 500 µm |
| Kuipitsidwa kwa Silicon pamwamba ndi Kuwala Kwambiri | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Kulongedza | Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer | Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer |
4-Inch 4H-Semi Insulating SiC Substrate Kufotokozera
| Chizindikiro | Giredi Yopanga ya Zero MPD (Giredi Z) | Giredi Yosamveka (Giredi D) |
|---|---|---|
| Katundu Wathupi | ||
| M'mimba mwake | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Mtundu wa poly | 4H | 4H |
| Kukhuthala | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Kuwongolera kwa Wafer | Pa axis: <600h > 0.5° | Pa axis: <000h > 0.5° |
| Katundu Wamagetsi | ||
| Kuchuluka kwa mapaipi ang'onoang'ono (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Kusakhazikika | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Kulekerera kwa Jiometri | ||
| Kuyang'ana Kwambiri Pang'onopang'ono | (0x10) ± 5.0° | (0x10) ± 5.0° |
| Utali Woyamba Wathyathyathya | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Utali Wachiwiri Wathyathyathya | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Kuyang'ana Kwachiwiri Kwapafupi | 90° CW kuchokera ku Prime flat ± 5.0° (Si yayang'ana mmwamba) | 90° CW kuchokera ku Prime flat ± 5.0° (Si yayang'ana mmwamba) |
| Kupatula Mphepete | 3 mm | 3 mm |
| LTV / TTV / Uta / Kupindika | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Ubwino Wapamwamba | ||
| Kukhwima kwa Pamwamba (Polish Ra) | ≤1 nm | ≤1 nm |
| Kuuma kwa Pamwamba (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Ming'alu ya M'mphepete (Kuwala Kwambiri) | Sikuloledwa | Kutalika kokwanira ≥10 mm, mng'alu umodzi ≤2 mm |
| Zilema za Hexagonal Plate | ≤0.05% malo osonkhanitsira | ≤0.1% malo osonkhanitsira |
| Madera Ophatikizana a Polytype | Sikuloledwa | ≤1% malo osonkhanitsira |
| Kuphatikizidwa kwa Kaboni Yowoneka | ≤0.05% malo osonkhanitsira | ≤1% malo osonkhanitsira |
| Kukanda kwa Silicon pamwamba | Sikuloledwa | ≤1 m'lifupi mwake wa wafer |
| Ma chips a m'mphepete | Palibe chololedwa (≥0.2 mm m'lifupi/kuya) | ≤5 tchipisi (chilichonse ≤1 mm) |
| Kuipitsidwa kwa Silicon pamwamba | Zomwe sizinafotokozedwe | Zomwe sizinafotokozedwe |
| Kulongedza | ||
| Kulongedza | Kaseti yokhala ndi ma wafer ambiri kapena chidebe chokhala ndi ma wafer amodzi | Kaseti ya ma wafer ambiri kapena |
Ntchito:
TheSiC 4H Semi-Insulating substratesamagwiritsidwa ntchito makamaka pazida zamagetsi zamagetsi zamphamvu kwambiri komanso zamafupipafupi, makamaka muMunda wa RFMa substrates awa ndi ofunikira kwambiri pa ntchito zosiyanasiyana kuphatikizapomakina olumikizirana a maikulowevu, radar yokhazikikandizozindikira zamagetsi zopanda zingweMphamvu yawo yotenthetsera kutentha kwambiri komanso mphamvu zawo zamagetsi zabwino kwambiri zimapangitsa kuti zikhale zoyenera kugwiritsidwa ntchito molimbika mu zamagetsi zamagetsi ndi makina olumikizirana.
Kapangidwe ka SiC epi wafer 4H-N ndi kagwiritsidwe ntchito
Katundu ndi Ntchito za SiC 4H-N Type Epi Wafer
Katundu wa SiC 4H-N Type Epi Wafer:
Kapangidwe ka Zinthu:
SiC (Silicon Carbide): Yodziwika ndi kuuma kwake kwakukulu, kutentha kwake kwakukulu, komanso mphamvu zake zamagetsi zabwino kwambiri, SiC ndi yabwino kwambiri pazida zamagetsi zogwira ntchito kwambiri.
Mtundu wa Polytype wa 4H-SiC: Polytype ya 4H-SiC imadziwika chifukwa cha kugwira ntchito bwino komanso kukhazikika kwake pakugwiritsa ntchito zamagetsi.
Kuchepetsa Mankhwala Osokoneza Bongo a Mtundu wa N: Kupopera kwa mtundu wa N (komwe kuli ndi nayitrogeni) kumapereka kuyenda bwino kwa ma elekitironi, zomwe zimapangitsa SiC kukhala yoyenera kugwiritsidwa ntchito pafupipafupi komanso mphamvu zambiri.
Kutentha Kwambiri:
Ma wafer a SiC ali ndi mphamvu yabwino kwambiri yotenthetsera kutentha, nthawi zambiri kuyambira120–200 W/m·K, zomwe zimawathandiza kuti azisamalira bwino kutentha m'zida zamphamvu kwambiri monga ma transistors ndi ma diode.
Chingwe Chokulirapo:
Ndi bandgap ya3.26 eV, 4H-SiC imatha kugwira ntchito pamagetsi apamwamba, ma frequency, ndi kutentha poyerekeza ndi zida zachikhalidwe zopangidwa ndi silicon, zomwe zimapangitsa kuti ikhale yoyenera kugwiritsa ntchito bwino kwambiri komanso yogwira ntchito bwino.
Katundu wa Magetsi:
Kuyenda kwa ma elekitironi ambiri a SiC komanso mphamvu yake yoyendetsa magetsi zimapangitsa kuti ikhale yabwino kwambirizamagetsi zamagetsi, zomwe zimapereka liwiro losinthira mwachangu komanso mphamvu yayikulu yogwiritsira ntchito mphamvu zamagetsi ndi magetsi, zomwe zimapangitsa kuti pakhale njira zoyendetsera mphamvu zogwira mtima kwambiri.
Kukana kwa Makina ndi Mankhwala:
SiC ndi imodzi mwa zipangizo zovuta kwambiri, yachiwiri pambuyo pa diamondi, ndipo imapirira kwambiri ku okosijeni ndi dzimbiri, zomwe zimapangitsa kuti ikhale yolimba m'malo ovuta.
Kugwiritsa ntchito SiC 4H-N Type Epi Wafer:
Zamagetsi Zamagetsi:
Ma wafer a mtundu wa SiC 4H-N epi amagwiritsidwa ntchito kwambiri mumphamvu za MOSFET, Ma IGBTndima diodechifukwa chakusintha kwa mphamvum'machitidwe mongama inverter a dzuwa, magalimoto amagetsindimakina osungira mphamvu, zomwe zimapangitsa kuti ntchito igwire bwino ntchito komanso kuti mphamvu zigwire bwino ntchito.
Magalimoto Amagetsi (ma EV):
In magalimoto amphamvu amagetsi, owongolera magalimotondimalo ochapira, Ma wafer a SiC amathandiza kuti batire igwire bwino ntchito, kuyatsa mofulumira, komanso kukonza mphamvu chifukwa cha mphamvu zawo zogwirira ntchito mwamphamvu komanso kutentha kwambiri.
Machitidwe a Mphamvu Zobwezerezedwanso:
Zosinthira Mphamvu za DzuwaMa wafer a SiC amagwiritsidwa ntchito mumakina amphamvu a dzuwaposintha mphamvu ya DC kuchokera ku ma solar panels kupita ku AC, zomwe zimapangitsa kuti dongosolo lonse lizigwira ntchito bwino komanso lizigwira ntchito bwino.
Ma Turbine a Mphepo: Ukadaulo wa SiC umagwiritsidwa ntchito mumachitidwe owongolera ma turbine a mphepo, kukonza bwino kupanga magetsi ndi kusintha mphamvu.
Ndege ndi Chitetezo:
Ma wafer a SiC ndi abwino kugwiritsa ntchitozamagetsi amlengalengandintchito zankhondo, kuphatikizapomakina a radarndizamagetsi a satelayiti, komwe kukana kutentha kwambiri komanso kukhazikika kwa kutentha ndikofunikira kwambiri.
Kugwiritsa Ntchito Kutentha Kwambiri ndi Kuchuluka Kwambiri:
Ma wafer a SiC ndi abwino kwambirizamagetsi otentha kwambiri, yogwiritsidwa ntchito muinjini za ndege, chombo chamlengalengandimakina otenthetsera mafakitale, chifukwa zimasunga magwiridwe antchito pamalo otentha kwambiri. Kuphatikiza apo, kusiyana kwawo kwakukulu kumalola kugwiritsidwa ntchito muntchito zomwe zimachitika pafupipafupingatiZipangizo za RFndikulumikizana kwa maikulowevu.
| Mafotokozedwe a axial a epit axial a mainchesi 6 a N | |||
| Chizindikiro | gawo | Z-MOS | |
| Mtundu | Kuwongolera / Dopant | - | Mtundu wa N / Nayitrogeni |
| Gawo la Buffer | Kukhuthala kwa Gawo la Buffer | um | 1 |
| Kulekerera kwa makulidwe a Buffer Layer | % | ± 20% | |
| Kukhazikika kwa Gawo la Buffer | cm-3 | 1.00E+18 | |
| Kulekerera Kukhazikika kwa Buffer Layer | % | ± 20% | |
| Gawo Loyamba la Epi | Kukhuthala kwa Epi Layer | um | 11.5 |
| Kufanana kwa Makulidwe a Epi Layer | % | ± 4% | |
| Kulekerera kwa Makulidwe a Epi Layers ((Spec-) Max ，Mphindi)/Zodziwikiratu) | % | ± 5% | |
| Kukhazikika kwa Epi Layer | cm-3 | 1E 15~ 1E 18 | |
| Kulekerera Kukhazikika kwa Epi Layer | % | 6% | |
| Kugwirizana kwa Epi Layer Concentration (σ /apakati) | % | ≤5% | |
| Kugwirizana kwa Epi Layer Concentration <(mphindi yayikulu)/(mphindi yayikulu+> | % | ≤ 10% | |
| Chifaniziro cha Epitaixal Wafer | Uta | um | ≤±20 |
| WARP | um | ≤30 | |
| TTV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Makhalidwe Abwino | Kutalika kwa mikwingwirima | mm | ≤30mm |
| Ma chips a m'mphepete | - | PALIBE | |
| Tanthauzo la zolakwika | ≥97% (Yoyezedwa ndi 2*2, Zofooka zakupha zimaphatikizapo: Zofooka zimaphatikizapo Chitoliro cha Micropipe / Mabowo Aakulu, Karoti, Triangular | ||
| Kuipitsidwa ndi zitsulo | maatomu/cm² | d f f ll i ≤5E10 maatomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Phukusi | Zofotokozera za kulongedza | ma PC/bokosi | kaseti yokhala ndi ma wafer ambiri kapena chidebe chimodzi cha wafer |
| Mafotokozedwe a epitaxial a 8-inch N-mtundu | |||
| Chizindikiro | gawo | Z-MOS | |
| Mtundu | Kuwongolera / Dopant | - | Mtundu wa N / Nayitrogeni |
| Gawo la buffer | Kukhuthala kwa Gawo la Buffer | um | 1 |
| Kulekerera kwa makulidwe a Buffer Layer | % | ± 20% | |
| Kukhazikika kwa Gawo la Buffer | cm-3 | 1.00E+18 | |
| Kulekerera Kukhazikika kwa Buffer Layer | % | ± 20% | |
| Gawo Loyamba la Epi | Avereji ya makulidwe a Epi Layers | um | 8~ 12 |
| Kukhuthala kwa Epi Layers Kufanana (σ/avereji) | % | ≤2.0 | |
| Kulekerera kwa Makulidwe a Epi ((Spec -Max, Min)/Spec) | % | ±6 | |
| Kuchepetsa Doping ya Epi Layers | cm-3 | 8E+15 ~2E+16 | |
| Kufanana kwa Epi Layers Net Doping (σ/avereji) | % | ≤5 | |
| Kulekerera kwa Epi Layers Net Doping((Spec -Max， | % | ± 10.0 | |
| Chifaniziro cha Epitaixal Wafer | Mi )/S ) Kupindika | um | ≤50.0 |
| Uta | um | ± 30.0 | |
| TTV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm × 10mm) | |
| General Makhalidwe | Kukanda | - | Kutalika kokwanira ≤ 1/2 m'mimba mwake wa Wafer |
| Ma chips a m'mphepete | - | ≤2 tchipisi, Utali uliwonse ≤1.5mm | |
| Kuipitsidwa kwa Zitsulo Zapamwamba | maatomu/cm2 | ≤5E10 maatomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Kuyang'anira Zilema Bwino | % | ≥ 96.0 (Zolakwika za 2X2 zikuphatikizapo Micropipe / Large pits, Karoti, Zolakwika zitatu, Kugwa, Linear/IGSF-s, BPD) | |
| Kuipitsidwa kwa Zitsulo Zapamwamba | maatomu/cm2 | ≤5E10 maatomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Phukusi | Zofotokozera za kulongedza | - | kaseti yokhala ndi ma wafer ambiri kapena chidebe chimodzi cha wafer |
Mafunso ndi Mayankho a SiC wafer
Q1: Kodi ubwino waukulu wogwiritsa ntchito ma wafer a SiC kuposa ma wafer a silicon achikhalidwe mu zamagetsi zamagetsi ndi uti?
A1:
Ma wafer a SiC amapereka zabwino zingapo zazikulu kuposa ma wafer achikhalidwe a silicon (Si) mumagetsi amphamvu, kuphatikizapo:
Kuchita Bwino Kwambiri: SiC ili ndi bandgap yayikulu (3.26 eV) poyerekeza ndi silicon (1.1 eV), zomwe zimathandiza kuti zipangizo zizigwira ntchito pa ma voltage apamwamba, ma frequency, ndi kutentha. Izi zimapangitsa kuti mphamvu ichepe komanso kuti mphamvu zigwire bwino ntchito m'makina osinthira mphamvu.
Kutentha Kwambiri: Mphamvu ya SiC yotenthetsera kutentha ndi yapamwamba kwambiri kuposa ya silicon, zomwe zimathandiza kuti kutentha kusamayende bwino mu ntchito zamphamvu kwambiri, zomwe zimapangitsa kuti zipangizo zamagetsi zikhale zodalirika komanso zokhalitsa.
Kugwira Ntchito Kwambiri ndi Mphamvu ZamakonoZipangizo za SiC zimatha kuthana ndi mphamvu zamagetsi ndi mphamvu zamagetsi zambiri, zomwe zimapangitsa kuti zikhale zoyenera kugwiritsidwa ntchito ndi mphamvu zamagetsi monga magalimoto amagetsi, makina obwezeretsanso mphamvu, ndi ma drive amagetsi a mafakitale.
Liwiro Losinthira MofulumiraZipangizo za SiC zili ndi mphamvu zosinthira mwachangu, zomwe zimathandiza kuchepetsa kutayika kwa mphamvu ndi kukula kwa makina, zomwe zimapangitsa kuti zikhale zoyenera kugwiritsidwa ntchito pafupipafupi.
Q2: Kodi ma wafer a SiC amagwiritsidwa ntchito bwanji kwambiri mumakampani opanga magalimoto?
A2:
Mu makampani opanga magalimoto, ma wafer a SiC amagwiritsidwa ntchito makamaka mu:
Magalimoto Oyendera Magetsi (EV): Zigawo zochokera ku SiC mongama inverterndimphamvu za MOSFETkukonza magwiridwe antchito ndi magwiridwe antchito a magalimoto amphamvu amagetsi mwa kupangitsa kuti liwiro losinthira liziyenda mofulumira komanso kuchuluka kwa mphamvu. Izi zimapangitsa kuti batire ikhale yayitali komanso kuti galimotoyo igwire bwino ntchito.
Ma Charger Omwe Ali M'bwatoZipangizo za SiC zimathandiza kukonza magwiridwe antchito a makina ochapira omwe ali m'galimoto mwa kupangitsa kuti nthawi yochapira ikhale yofulumira komanso kuyendetsa bwino kutentha, zomwe ndizofunikira kwambiri kuti ma EV azitha kuthandizira malo ochapira amphamvu kwambiri.
Machitidwe Oyendetsera Mabatire (BMS): Ukadaulo wa SiC umathandiza kuti ntchito yamachitidwe oyang'anira mabatire, zomwe zimathandiza kuti magetsi aziyenda bwino, kuti mphamvu zigwire bwino ntchito, komanso kuti batire ikhale ndi nthawi yayitali.
Zosinthira za DC-DCMa wafer a SiC amagwiritsidwa ntchito muZosinthira za DC-DCkusintha mphamvu ya DC yamagetsi amphamvu kwambiri kukhala mphamvu ya DC yamagetsi otsika bwino, zomwe ndizofunikira kwambiri m'magalimoto amagetsi kuti aziyendetsa mphamvu kuchokera ku batri kupita ku zigawo zosiyanasiyana mgalimoto.
Kugwira ntchito bwino kwa SiC pakugwiritsa ntchito magetsi amphamvu, kutentha kwambiri, komanso kugwiritsa ntchito bwino kwambiri kumapangitsa kuti makampani opanga magalimoto asinthe kukhala magetsi.
Mafotokozedwe a SiC wafer a 6inch 4H-N | ||
| Katundu | Giredi Yopanga ya Zero MPD (Giredi Z) | Giredi Yosamveka (Giredi D) |
| Giredi | Giredi Yopanga ya Zero MPD (Giredi Z) | Giredi Yosamveka (Giredi D) |
| M'mimba mwake | 149.5 mm – 150.0 mm | 149.5 mm – 150.0 mm |
| Mtundu wa poly | 4H | 4H |
| Kukhuthala | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Kuwongolera kwa Wafer | Mzere wotsekedwa: 4.0° kulowera <1120> ± 0.5° | Mzere wotsekedwa: 4.0° kulowera <1120> ± 0.5° |
| Kuchuluka kwa mapaipi ang'onoang'ono | ≤ 0.2 cm² | ≤ 15 cm² |
| Kusakhazikika | 0.015 – 0.024 Ω·cm | 0.015 – 0.028 Ω·cm |
| Kuyang'ana Kwambiri Pang'onopang'ono | [10-10] ± 50° | [10-10] ± 50° |
| Utali Woyamba Wathyathyathya | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Kupatula Mphepete | 3 mm | 3 mm |
| LTV/TIV / Uta / Kupindika | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Kuuma | Polish Ra ≤ 1 nm | Polish Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Ming'alu ya Mphepete Yopangidwa ndi Kuwala Kwakukulu Kwambiri | Kutalika kokwanira ≤ 20 mm kutalika kamodzi ≤ 2 mm | Kutalika kokwanira ≤ 20 mm kutalika kamodzi ≤ 2 mm |
| Mbale za Hex Ndi Kuwala Kwakukulu Kwambiri | Malo osonkhanitsidwa ≤ 0.05% | Malo osonkhanitsidwa ≤ 0.1% |
| Malo Opangidwa ndi Polytype Ndi Kuwala Kwambiri | Malo osonkhanitsidwa ≤ 0.05% | Malo osonkhanitsidwa ≤ 3% |
| Kuphatikizidwa kwa Kaboni Yowoneka | Malo osonkhanitsidwa ≤ 0.05% | Malo osonkhanitsidwa ≤ 5% |
| Kukanda kwa Silicon Pamwamba Ndi Kuwala Kwambiri | Kutalika kokwanira ≤ 1 wafer m'mimba mwake | |
| Ma Chips a M'mphepete Ndi Kuwala Kwakukulu Kwambiri | Palibe chololedwa ≥ m'lifupi ndi kuya kwa 0.2 mm | 7 zololedwa, ≤ 1 mm iliyonse |
| Kutulutsa Ulusi wa Screw | < 500 cm³ | < 500 cm³ |
| Kuipitsidwa kwa Silicon pamwamba ndi Kuwala Kwambiri | ||
| Kulongedza | Kaseti Yokhala ndi Ma Wafer Ambiri Kapena Chidebe Chimodzi Chokhala ndi Ma Wafer | Kaseti Yokhala ndi Ma Wafer Ambiri Kapena Chidebe Chimodzi Chokhala ndi Ma Wafer |
Mafotokozedwe a 8inch 4H-N SiC wafer | ||
| Katundu | Giredi Yopanga ya Zero MPD (Giredi Z) | Giredi Yosamveka (Giredi D) |
| Giredi | Giredi Yopanga ya Zero MPD (Giredi Z) | Giredi Yosamveka (Giredi D) |
| M'mimba mwake | 199.5 mm – 200.0 mm | 199.5 mm – 200.0 mm |
| Mtundu wa poly | 4H | 4H |
| Kukhuthala | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Kuwongolera kwa Wafer | 4.0° kulowera <110> ± 0.5° | 4.0° kulowera <110> ± 0.5° |
| Kuchuluka kwa mapaipi ang'onoang'ono | ≤ 0.2 cm² | ≤ 5 cm² |
| Kusakhazikika | 0.015 – 0.025 Ω·cm | 0.015 – 0.028 Ω·cm |
| Kuyang'ana Kwabwino | ||
| Kupatula Mphepete | 3 mm | 3 mm |
| LTV/TIV / Uta / Kupindika | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Kuuma | Polish Ra ≤ 1 nm | Polish Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Ming'alu ya Mphepete Yopangidwa ndi Kuwala Kwakukulu Kwambiri | Kutalika kokwanira ≤ 20 mm kutalika kamodzi ≤ 2 mm | Kutalika kokwanira ≤ 20 mm kutalika kamodzi ≤ 2 mm |
| Mbale za Hex Ndi Kuwala Kwakukulu Kwambiri | Malo osonkhanitsidwa ≤ 0.05% | Malo osonkhanitsidwa ≤ 0.1% |
| Malo Opangidwa ndi Polytype Ndi Kuwala Kwambiri | Malo osonkhanitsidwa ≤ 0.05% | Malo osonkhanitsidwa ≤ 3% |
| Kuphatikizidwa kwa Kaboni Yowoneka | Malo osonkhanitsidwa ≤ 0.05% | Malo osonkhanitsidwa ≤ 5% |
| Kukanda kwa Silicon Pamwamba Ndi Kuwala Kwambiri | Kutalika kokwanira ≤ 1 wafer m'mimba mwake | |
| Ma Chips a M'mphepete Ndi Kuwala Kwakukulu Kwambiri | Palibe chololedwa ≥ m'lifupi ndi kuya kwa 0.2 mm | 7 zololedwa, ≤ 1 mm iliyonse |
| Kutulutsa Ulusi wa Screw | < 500 cm³ | < 500 cm³ |
| Kuipitsidwa kwa Silicon pamwamba ndi Kuwala Kwambiri | ||
| Kulongedza | Kaseti Yokhala ndi Ma Wafer Ambiri Kapena Chidebe Chimodzi Chokhala ndi Ma Wafer | Kaseti Yokhala ndi Ma Wafer Ambiri Kapena Chidebe Chimodzi Chokhala ndi Ma Wafer |
6Inch 4H-semi SiC substrate specifications | ||
| Katundu | Giredi Yopanga ya Zero MPD (Giredi Z) | Giredi Yosamveka (Giredi D) |
| M'mimba mwake (mm) | 145 mm – 150 mm | 145 mm – 150 mm |
| Mtundu wa poly | 4H | 4H |
| Kukhuthala (um) | 500 ± 15 | 500 ± 25 |
| Kuwongolera kwa Wafer | Pa mzere: ± 0.0001° | Pa axis: ± 0.05° |
| Kuchuluka kwa mapaipi ang'onoang'ono | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Kukana (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Kuyang'ana Kwambiri Pang'onopang'ono | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Utali Woyamba Wathyathyathya | Chingwe | Chingwe |
| Kuchotsera Mphepete (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Bowl / Warp | ≤ 3 µm | ≤ 3 µm |
| Kuuma | Polish Ra ≤ 1.5 µm | Polish Ra ≤ 1.5 µm |
| Ma Chips a M'mphepete Ndi Kuwala Kwakukulu Kwambiri | ≤ 20 µm | ≤ 60 µm |
| Mbale Zotenthetsera Ndi Kuwala Kwakukulu Kwambiri | Zosonkhanitsidwa ≤ 0.05% | Zosonkhanitsidwa ≤ 3% |
| Malo Opangidwa ndi Polytype Ndi Kuwala Kwambiri | Kuphatikizidwa kwa Kaboni Yowoneka ≤ 0.05% | Zosonkhanitsidwa ≤ 3% |
| Kukanda kwa Silicon Pamwamba Ndi Kuwala Kwambiri | ≤ 0.05% | Zosonkhanitsidwa ≤ 4% |
| Ma Edge Chips Ndi High Intensity Light (Kukula) | Sizololedwa > 02 mm M'lifupi ndi Kuzama | Sizololedwa > 02 mm M'lifupi ndi Kuzama |
| Kutsegula kwa Screw Yothandiza | ≤ 500 µm | ≤ 500 µm |
| Kuipitsidwa kwa Silicon pamwamba ndi Kuwala Kwambiri | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Kulongedza | Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer | Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer |
4-Inch 4H-Semi Insulating SiC Substrate Kufotokozera
| Chizindikiro | Giredi Yopanga ya Zero MPD (Giredi Z) | Giredi Yosamveka (Giredi D) |
|---|---|---|
| Katundu Wathupi | ||
| M'mimba mwake | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Mtundu wa poly | 4H | 4H |
| Kukhuthala | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Kuwongolera kwa Wafer | Pa axis: <600h > 0.5° | Pa axis: <000h > 0.5° |
| Katundu Wamagetsi | ||
| Kuchuluka kwa mapaipi ang'onoang'ono (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Kusakhazikika | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Kulekerera kwa Jiometri | ||
| Kuyang'ana Kwambiri Pang'onopang'ono | (0×10) ± 5.0° | (0×10) ± 5.0° |
| Utali Woyamba Wathyathyathya | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Utali Wachiwiri Wathyathyathya | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Kuyang'ana Kwachiwiri Kwapafupi | 90° CW kuchokera ku Prime flat ± 5.0° (Si yayang'ana mmwamba) | 90° CW kuchokera ku Prime flat ± 5.0° (Si yayang'ana mmwamba) |
| Kupatula Mphepete | 3 mm | 3 mm |
| LTV / TTV / Uta / Kupindika | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Ubwino Wapamwamba | ||
| Kukhwima kwa Pamwamba (Polish Ra) | ≤1 nm | ≤1 nm |
| Kuuma kwa Pamwamba (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Ming'alu ya M'mphepete (Kuwala Kwambiri) | Sikuloledwa | Kutalika kokwanira ≥10 mm, mng'alu umodzi ≤2 mm |
| Zilema za Hexagonal Plate | ≤0.05% malo osonkhanitsira | ≤0.1% malo osonkhanitsira |
| Madera Ophatikizana a Polytype | Sikuloledwa | ≤1% malo osonkhanitsira |
| Kuphatikizidwa kwa Kaboni Yowoneka | ≤0.05% malo osonkhanitsira | ≤1% malo osonkhanitsira |
| Kukanda kwa Silicon pamwamba | Sikuloledwa | ≤1 m'lifupi mwake wa wafer |
| Ma chips a m'mphepete | Palibe chololedwa (≥0.2 mm m'lifupi/kuya) | ≤5 tchipisi (chilichonse ≤1 mm) |
| Kuipitsidwa kwa Silicon pamwamba | Zomwe sizinafotokozedwe | Zomwe sizinafotokozedwe |
| Kulongedza | ||
| Kulongedza | Kaseti yokhala ndi ma wafer ambiri kapena chidebe chokhala ndi ma wafer amodzi | Kaseti ya ma wafer ambiri kapena |
| Mafotokozedwe a axial a epit axial a mainchesi 6 a N | |||
| Chizindikiro | gawo | Z-MOS | |
| Mtundu | Kuwongolera / Dopant | - | Mtundu wa N / Nayitrogeni |
| Gawo la Buffer | Kukhuthala kwa Gawo la Buffer | um | 1 |
| Kulekerera kwa makulidwe a Buffer Layer | % | ± 20% | |
| Kukhazikika kwa Gawo la Buffer | cm-3 | 1.00E+18 | |
| Kulekerera Kukhazikika kwa Buffer Layer | % | ± 20% | |
| Gawo Loyamba la Epi | Kukhuthala kwa Epi Layer | um | 11.5 |
| Kufanana kwa Makulidwe a Epi Layer | % | ± 4% | |
| Kulekerera kwa Makulidwe a Epi Layers ((Spec-) Max ，Mphindi)/Zodziwikiratu) | % | ± 5% | |
| Kukhazikika kwa Epi Layer | cm-3 | 1E 15~ 1E 18 | |
| Kulekerera Kukhazikika kwa Epi Layer | % | 6% | |
| Kugwirizana kwa Epi Layer Concentration (σ /apakati) | % | ≤5% | |
| Kugwirizana kwa Epi Layer Concentration <(mphindi yayikulu)/(mphindi yayikulu+> | % | ≤ 10% | |
| Chifaniziro cha Epitaixal Wafer | Uta | um | ≤±20 |
| WARP | um | ≤30 | |
| TTV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Makhalidwe Abwino | Kutalika kwa mikwingwirima | mm | ≤30mm |
| Ma chips a m'mphepete | - | PALIBE | |
| Tanthauzo la zolakwika | ≥97% (Yoyezedwa ndi 2*2, Zofooka zakupha zimaphatikizapo: Zofooka zimaphatikizapo Chitoliro cha Micropipe / Mabowo Aakulu, Karoti, Triangular | ||
| Kuipitsidwa ndi zitsulo | maatomu/cm² | d f f ll i ≤5E10 maatomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Phukusi | Zofotokozera za kulongedza | ma PC/bokosi | kaseti yokhala ndi ma wafer ambiri kapena chidebe chimodzi cha wafer |
| Mafotokozedwe a epitaxial a 8-inch N-mtundu | |||
| Chizindikiro | gawo | Z-MOS | |
| Mtundu | Kuwongolera / Dopant | - | Mtundu wa N / Nayitrogeni |
| Gawo la buffer | Kukhuthala kwa Gawo la Buffer | um | 1 |
| Kulekerera kwa makulidwe a Buffer Layer | % | ± 20% | |
| Kukhazikika kwa Gawo la Buffer | cm-3 | 1.00E+18 | |
| Kulekerera Kukhazikika kwa Buffer Layer | % | ± 20% | |
| Gawo Loyamba la Epi | Avereji ya makulidwe a Epi Layers | um | 8~ 12 |
| Kukhuthala kwa Epi Layers Kufanana (σ/avereji) | % | ≤2.0 | |
| Kulekerera kwa Makulidwe a Epi ((Spec -Max, Min)/Spec) | % | ±6 | |
| Kuchepetsa Doping ya Epi Layers | cm-3 | 8E+15 ~2E+16 | |
| Kufanana kwa Epi Layers Net Doping (σ/avereji) | % | ≤5 | |
| Kulekerera kwa Epi Layers Net Doping((Spec -Max， | % | ± 10.0 | |
| Chifaniziro cha Epitaixal Wafer | Mi )/S ) Kupindika | um | ≤50.0 |
| Uta | um | ± 30.0 | |
| TTV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm × 10mm) | |
| General Makhalidwe | Kukanda | - | Kutalika kokwanira ≤ 1/2 m'mimba mwake wa Wafer |
| Ma chips a m'mphepete | - | ≤2 tchipisi, Utali uliwonse ≤1.5mm | |
| Kuipitsidwa kwa Zitsulo Zapamwamba | maatomu/cm2 | ≤5E10 maatomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Kuyang'anira Zilema Bwino | % | ≥ 96.0 (Zolakwika za 2X2 zikuphatikizapo Micropipe / Large pits, Karoti, Zolakwika zitatu, Kugwa, Linear/IGSF-s, BPD) | |
| Kuipitsidwa kwa Zitsulo Zapamwamba | maatomu/cm2 | ≤5E10 maatomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Phukusi | Zofotokozera za kulongedza | - | kaseti yokhala ndi ma wafer ambiri kapena chidebe chimodzi cha wafer |
Q1: Kodi ubwino waukulu wogwiritsa ntchito ma wafer a SiC kuposa ma wafer a silicon achikhalidwe mu zamagetsi zamagetsi ndi uti?
A1:
Ma wafer a SiC amapereka zabwino zingapo zazikulu kuposa ma wafer achikhalidwe a silicon (Si) mumagetsi amphamvu, kuphatikizapo:
Kuchita Bwino Kwambiri: SiC ili ndi bandgap yayikulu (3.26 eV) poyerekeza ndi silicon (1.1 eV), zomwe zimathandiza kuti zipangizo zizigwira ntchito pa ma voltage apamwamba, ma frequency, ndi kutentha. Izi zimapangitsa kuti mphamvu ichepe komanso kuti mphamvu zigwire bwino ntchito m'makina osinthira mphamvu.
Kutentha Kwambiri: Mphamvu ya SiC yotenthetsera kutentha ndi yapamwamba kwambiri kuposa ya silicon, zomwe zimathandiza kuti kutentha kusamayende bwino mu ntchito zamphamvu kwambiri, zomwe zimapangitsa kuti zipangizo zamagetsi zikhale zodalirika komanso zokhalitsa.
Kugwira Ntchito Kwambiri ndi Mphamvu ZamakonoZipangizo za SiC zimatha kuthana ndi mphamvu zamagetsi ndi mphamvu zamagetsi zambiri, zomwe zimapangitsa kuti zikhale zoyenera kugwiritsidwa ntchito ndi mphamvu zamagetsi monga magalimoto amagetsi, makina obwezeretsanso mphamvu, ndi ma drive amagetsi a mafakitale.
Liwiro Losinthira MofulumiraZipangizo za SiC zili ndi mphamvu zosinthira mwachangu, zomwe zimathandiza kuchepetsa kutayika kwa mphamvu ndi kukula kwa makina, zomwe zimapangitsa kuti zikhale zoyenera kugwiritsidwa ntchito pafupipafupi.
Q2: Kodi ma wafer a SiC amagwiritsidwa ntchito bwanji kwambiri mumakampani opanga magalimoto?
A2:
Mu makampani opanga magalimoto, ma wafer a SiC amagwiritsidwa ntchito makamaka mu:
Magalimoto Oyendera Magetsi (EV): Zigawo zochokera ku SiC mongama inverterndimphamvu za MOSFETkukonza magwiridwe antchito ndi magwiridwe antchito a magalimoto amphamvu amagetsi mwa kupangitsa kuti liwiro losinthira liziyenda mofulumira komanso kuchuluka kwa mphamvu. Izi zimapangitsa kuti batire ikhale yayitali komanso kuti galimotoyo igwire bwino ntchito.
Ma Charger Omwe Ali M'bwatoZipangizo za SiC zimathandiza kukonza magwiridwe antchito a makina ochapira omwe ali m'galimoto mwa kupangitsa kuti nthawi yochapira ikhale yofulumira komanso kuyendetsa bwino kutentha, zomwe ndizofunikira kwambiri kuti ma EV azitha kuthandizira malo ochapira amphamvu kwambiri.
Machitidwe Oyendetsera Mabatire (BMS): Ukadaulo wa SiC umathandiza kuti ntchito yamachitidwe oyang'anira mabatire, zomwe zimathandiza kuti magetsi aziyenda bwino, kuti mphamvu zigwire bwino ntchito, komanso kuti batire ikhale ndi nthawi yayitali.
Zosinthira za DC-DCMa wafer a SiC amagwiritsidwa ntchito muZosinthira za DC-DCkusintha mphamvu ya DC yamagetsi amphamvu kwambiri kukhala mphamvu ya DC yamagetsi otsika bwino, zomwe ndizofunikira kwambiri m'magalimoto amagetsi kuti aziyendetsa mphamvu kuchokera ku batri kupita ku zigawo zosiyanasiyana mgalimoto.
Kugwira ntchito bwino kwa SiC pakugwiritsa ntchito magetsi amphamvu, kutentha kwambiri, komanso kugwiritsa ntchito bwino kwambiri kumapangitsa kuti makampani opanga magalimoto asinthe kukhala magetsi.
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