SiC
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Chitsulo cha silicon carbide cha mainchesi 12 cha SIC chokhala ndi mainchesi 300mm chachikulu kukula kwake 4H-N Choyenera kutenthetsa kutentha kwa chipangizo champhamvu kwambiri
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8 inchi SiC silicon carbide wafer 4H-N mtundu 0.5mm kupanga kalasi yofufuza kalasi yopangidwa mwamakonda
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HPSI SiC wafer dia: 3inch makulidwe: 350um ± 25 µm ya Power Electronics
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3inch High purify Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch yatsopano
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Ma Wafers a Silicon Carbide a SiC a mainchesi 8 a 200mm 4H-N mtundu wa Kupanga kalasi 500um makulidwe
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Giredi Mos Giredi
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Wafa wa mainchesi 12 wa 4H-SiC wa magalasi a AR
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HPSI SiC Wafer ≥90% Transmittance Optical Giredi ya Magalasi a AI/AR
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Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity ya Magalasi a Ar
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Ma Wafer a Epitaxial a 4H-SiC a MOSFET a Ultra-High Voltage (100–500 μm, mainchesi 6)
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SICOI (Silicon Carbide pa Insulator) Wafers SiC Film ON Silicon