p-mtundu 4H/6H-P 3C-N TYPE SIC gawo lapansi 4inch 〈111〉± 0.5°Ziro MPD

p-mtundu 4H/6H-P 3C-N TYPE SIC gawo 4inch 〈111〉± 0.5°Ziro MPD Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Mtundu wa P-4H/6H-P 3C-N mtundu wa SiC substrate, 4-inch yokhala ndi 〈111〉± 0.5° orientation ndi giredi ya Zero MPD (Micro Pipe Defect), ndi semiconductor yochita bwino kwambiri yopangidwira zida zapamwamba zamagetsi. kupanga. Wodziwika bwino chifukwa cha matenthedwe ake abwino kwambiri, magetsi owonongeka kwambiri, komanso kukana kwambiri kutentha ndi dzimbiri, gawo lapansili ndilabwino pamagetsi amagetsi ndi ntchito za RF. Gawo la Zero MPD limatsimikizira zolakwika zochepa, kuwonetsetsa kudalirika komanso kukhazikika pazida zogwira ntchito kwambiri. Mayendedwe ake enieni 〈111〉± 0.5° amalola kuwongolera kolondola panthawi yopanga, ndikupangitsa kuti ikhale yoyenera pakupanga kwakukulu. Gawo laling'onoli limagwiritsidwa ntchito kwambiri pazida zamagetsi zotentha kwambiri, zamphamvu kwambiri komanso zothamanga kwambiri, monga zosinthira mphamvu, ma inverters, ndi zida za RF.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zogulitsa Tags

4H/6H-P Mtundu wa SiC Composite Substrates Common parameter table

4 silicon m'mimba mwakeCarbide (SiC) gawo lapansi Kufotokozera

Gulu			Zero MPD Production Gawo (Z Gulu)	Standard Production Gawo (P Gulu)	Dummy Grade (D Gulu)
Diameter			99.5 mm ~ 100.0 mm
Makulidwe			350 μm ± 25 μm
Wafer Orientation			Kuchokera kumbali: 2.0 ° -4.0 ° kulowera [112(-)0] ± 0.5° kwa 4H/6H-P, On olamulira:〈111〉± 0.5° kwa 3C-N
Kuchulukana kwa Micropipe			0cm-2
Kukaniza	p-mtundu 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-mtundu 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Chiyambi cha Flat Orientation		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Utali Woyambira Wathyathyathya			32.5 mm ± 2.0 mm
Kutalika kwa Sekondale			18.0 mm ± 2.0 mm
Sekondale Flat Orientation			Silicon nkhope m'mwamba: 90 ° CW. kuchokera ku Prime flat±5.0 °
Kupatula M'mphepete			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ukali			Chipolishi Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Mphepete Mng'alu Mwa Kuwala Kwakukulu Kwambiri			Palibe		Utali wophatikiza ≤ 10 mm, utali umodzi≤2 mm
Hex Plates Mwa Kuwala Kwakukulu Kwambiri			Malo owonjezera ≤0.05%		Malo owonjezera ≤0.1%
Madera a Polytype Mwa Kuwala Kwakukulu Kwambiri			Palibe		Malo owonjezera≤3%
Mawonekedwe a Carbon Inclusions			Malo owonjezera ≤0.05%		Malo owonjezera ≤3%
Silicon Surface Scratches Ndi Kuwala Kwakukulu Kwambiri			Palibe		Kutalikirana ≤1 × awiri wafer
Mphepete Chips Mmwamba Mwamphamvu Kuwala			Palibe chololedwa ≥0.2mm m'lifupi ndi kuya		5 zololedwa, ≤1 mm iliyonse
Silicon Surface Kuipitsidwa Ndi Kuchuluka Kwambiri			Palibe
Kupaka			Makaseti amitundu yopyapyala kapena Chidebe Chowotcha Chimodzi

Ndemanga:

※ Malire a zolakwika amagwira ntchito pamtunda wonse kupatulapo m'mphepete mwake. # Zikandazi ziyenera kuyang'aniridwa pa Si nkhope yokha.

Mtundu wa P-4H/6H-P 3C-N mtundu wa 4-inch SiC gawo lapansi loyang'ana 〈111〉± 0.5° ndi giredi ya Zero MPD imagwiritsidwa ntchito kwambiri pamagetsi apamwamba kwambiri. Kutentha kwake kwabwino kwambiri komanso kuthamanga kwamphamvu kwamagetsi kumapangitsa kuti ikhale yabwino pamagetsi amagetsi, monga ma switch-voltage, ma inverter, ndi ma converter amagetsi, omwe amagwira ntchito movutikira. Kuphatikiza apo, kukana kwa gawo lapansi pakutentha kwambiri komanso dzimbiri kumapangitsa kuti ntchito ziziyenda bwino m'malo ovuta. Kuwongolera kolondola kwa 〈111〉± 0.5° kumakulitsa kulondola kwa kupanga, ndikupangitsa kuti ikhale yoyenera pazida za RF ndikugwiritsa ntchito pafupipafupi, monga makina a radar ndi zida zoyankhulirana zopanda zingwe.

Ubwino wa magawo amtundu wa N-SiC ndi awa:

1. High Thermal Conductivity: Kutentha kwabwino kwa kutentha, kumapangitsa kukhala koyenera kumadera otentha kwambiri komanso kugwiritsa ntchito mphamvu zambiri.
2. High Breakdown Voltage: Imatsimikizira magwiridwe antchito odalirika pamapulogalamu apamwamba kwambiri monga osinthira mphamvu ndi ma inverters.
3. Zero MPD (Micro Pipe Defect) Kalasi: Zimatsimikizira zolakwika zochepa, kupereka bata ndi kudalirika kwakukulu pazida zofunikira zamagetsi.
4. Kukaniza kwa Corrosion: Kukhalitsa m'malo ovuta, kuwonetsetsa kuti nthawi yayitali ikugwira ntchito m'mikhalidwe yovuta.
5. Zolondola 〈111〉± 0.5 ° Kuwongolera: Kumalola kugwirizanitsa kolondola panthawi yopanga, kupititsa patsogolo kachipangizo kachipangizo kachipangizo kapamwamba kwambiri ndi ntchito za RF.

Ponseponse, gawo la P-mtundu wa 4H/6H-P 3C-N mtundu wa 4-inchi SiC wokhala ndi 〈111〉± 0.5° yolunjika ndi Zero MPD giredi ndizomwe zimagwira ntchito kwambiri pamagetsi apamwamba kwambiri. Kutentha kwake kwabwino kwambiri komanso kuphulika kwamagetsi kumapangitsa kuti ikhale yabwino pamagetsi amagetsi monga ma switch okwera magetsi, ma inverters, ndi zosinthira. Gawo la Zero MPD limatsimikizira zolakwika zochepa, kupereka kudalirika ndi kukhazikika pazida zovuta. Kuphatikiza apo, kukana kwa gawo lapansi ku dzimbiri ndi kutentha kwambiri kumatsimikizira kulimba m'malo ovuta. Kuwongolera kolondola kwa 〈111〉± 0.5° kumalola kuwongolera kolondola panthawi yopanga, ndikupangitsa kuti ikhale yoyenera kwambiri pazida za RF komanso kugwiritsa ntchito pafupipafupi kwambiri.