Pa 26, Power Cube Semi idalengeza zakukula bwino kwa semiconductor yoyamba ya 2300V SiC (Silicon Carbide) MOSFET yaku South Korea.
Poyerekeza ndi Si (Silicon) based semiconductors, SiC (Silicon Carbide) imatha kupirira ma voltages apamwamba, motero imayamikiridwa ngati chipangizo cham'badwo wotsatira chomwe chimatsogolera tsogolo lamagetsi opangira magetsi.Imagwira ntchito ngati gawo lofunikira poyambitsa umisiri wotsogola, monga kuchuluka kwa magalimoto amagetsi komanso kukulitsa malo opangira data moyendetsedwa ndi luntha lochita kupanga.
Power Cube Semi ndi kampani yopanda pake yomwe imapanga zida zamagetsi zamagetsi m'magulu atatu: SiC (Silicon Carbide), Si (Silicon), ndi Ga2O3 (Gallium Oxide).Posachedwapa, kampaniyo inagwiritsa ntchito ndikugulitsa mphamvu zapamwamba za Schottky Barrier Diodes (SBDs) ku kampani yapadziko lonse yamagalimoto amagetsi ku China, ndikupeza kuzindikirika chifukwa cha mapangidwe ake a semiconductor ndi teknoloji.
Kutulutsidwa kwa 2300V SiC MOSFET ndikodziwika ngati mlandu woyamba ku South Korea.Infineon, kampani yapadziko lonse yamagetsi yamagetsi yochokera ku Germany, idalengezanso kukhazikitsidwa kwa 2000V yake mu Marichi, koma popanda 2300V zopangira.
Infineon's 2000V CoolSiC MOSFET, pogwiritsa ntchito phukusi la TO-247PLUS-4-HCC, imakwaniritsa kufunikira kwa kachulukidwe kamagetsi pakati pa opanga, kuwonetsetsa kudalirika kwadongosolo ngakhale pansi pamagetsi olimba kwambiri komanso kusintha pafupipafupi.
CoolSiC MOSFET imapereka mphamvu yowonjezereka yolumikizirana, yomwe imathandizira kuwonjezeka kwamagetsi popanda kuwonjezeka kwapano.Ndilo chipangizo choyamba cha silicon carbide pamsika chomwe chili ndi magetsi owonongeka a 2000V, pogwiritsa ntchito TO-247PLUS-4-HCC phukusi lokhala ndi mtunda wa 14mm ndi chilolezo cha 5.4mm.Zidazi zimakhala ndi zotayika zochepa zosinthira ndipo ndizoyenera kugwiritsa ntchito monga ma solar string inverters, makina osungira mphamvu, ndi kulipiritsa galimoto yamagetsi.
Mitundu yazogulitsa ya CoolSiC MOSFET 2000V ndi yoyenera pamabasi apamwamba kwambiri a DC mpaka 1500V DC.Poyerekeza ndi 1700V SiC MOSFET, chipangizochi chimapereka malire okwanira amagetsi a 1500V DC.CoolSiC MOSFET imapereka mphamvu ya 4.5V threshold voltage ndipo imakhala ndi ma diode olimba a thupi kuti azitha kuyenda movutikira.Ndi teknoloji yolumikizira ya .XT, zigawozi zimapereka ntchito yabwino kwambiri yotentha komanso kukana chinyezi champhamvu.
Kuphatikiza pa 2000V CoolSiC MOSFET, Infineon posachedwa ikhazikitsa ma diode owonjezera a CoolSiC ophatikizidwa mu TO-247PLUS 4-pin ndi TO-247-2 phukusi mgawo lachitatu la 2024 ndi kotala lomaliza la 2024, motsatana.Ma diode awa ndiwoyenera kwambiri kugwiritsa ntchito dzuwa.Zosakaniza zofananira zoyendetsa chipata ziliponso.
Zotsatsa za CoolSiC MOSFET 2000V tsopano zikupezeka pamsika.Kuphatikiza apo, Infineon imapereka ma board oyenera owunika: EVAL-COOLSIC-2KVHCC.Madivelopa atha kugwiritsa ntchito bolodi ngati njira yoyeserera yoyeserera kuti ayese ma CoolSiC MOSFET onse ndi ma diode ovoteledwa pa 2000V, komanso EiceDRIVER compact single-channel isolation gate driver 1ED31xx mndandanda wazogulitsa kudzera pawiri-pulse kapena mosalekeza PWM.
Gung Shin-soo, Chief Technology Officer wa Power Cube Semi, adati, "Tinatha kuwonjezera zomwe takumana nazo pakupanga ndi kupanga ma 1700V SiC MOSFETs mpaka 2300V.
Nthawi yotumiza: Apr-08-2024