LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6inch Orientaiton Y-42°/36°/108° Kukhuthala 250-500um

Kufotokozera Kwachidule:

Ma wafer a LiTaO₃ akuyimira dongosolo lofunikira la zinthu za piezoelectric ndi ferroelectric, lomwe limasonyeza ma coefficients apadera a piezoelectric, kukhazikika kwa kutentha, ndi mawonekedwe a kuwala, zomwe zimapangitsa kuti zikhale zofunikira kwambiri pazosefera za surface acoustic wave (SAW), ma resonator a bulk acoustic wave (BAW), ma optical modulators, ndi ma infrared detectors. XKH imadziwika kwambiri pa kafukufuku ndi chitukuko cha LiTaO₃ wafer, pogwiritsa ntchito njira zapamwamba za Czochralski (CZ) crystal growth ndi liquid phase epitaxy (LPE) kuti zitsimikizire kuti ma crystalline homogeneity ndi defect defect deficits <100/cm².

XKH imapereka ma wafer a LiTaO₃ a mainchesi 3, mainchesi 4, ndi mainchesi 6 okhala ndi mawonekedwe osiyanasiyana a kristalo (X-cut, Y-cut, Z-cut), othandizira mankhwala opangidwa mwamakonda (Mg, Zn) ndi poling kuti akwaniritse zofunikira zinazake zogwiritsidwa ntchito. Chosasintha cha dielectric cha chipangizocho (ε~40-50), piezoelectric coefficient (d₃₃~8-10 pC/N), ndi kutentha kwa Curie (~600°C) zimakhazikitsa LiTaO₃ ngati gawo lofunikira kwambiri la zosefera zama frequency apamwamba komanso masensa olondola.

Kupanga kwathu kogwirizana ndi vertically kumaphatikizapo kukula kwa makristalo, kupukuta, kupukuta, ndi kuyika filimu yopyapyala, ndipo mphamvu yopangira pamwezi yoposa ma wafer 3,000 kuti apereke mauthenga a 5G, zamagetsi, ma photonics, ndi mafakitale achitetezo. Timapereka upangiri waukadaulo wokwanira, kufotokozera zitsanzo, ndi ntchito zoyeserera zochepa kuti tipereke mayankho abwino a LiTaO₃.

Tumizani imelo kwa ife

Mawonekedwe

Magawo aukadaulo

Dzina	LiTaO3 yowoneka bwino	Mlingo wa tebulo la phokoso LiTaO3
Axial	Z kudula + / - 0.2 °	36 ° Y kudula / 42 ° Y kudula / X kudula(+ / - 0.2 °)
M'mimba mwake	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
Ndege ya Datum	22mm + / - 2mm	22mm + /-2mm32mm + /-2mm
Kukhuthala	500um + /-5mm1000um + /-5mm	500um + /-20mm350um + /-20mm
TTV	≤ 10um	≤ 10um
Kutentha kwa Curie	605 °C + / - 0.7 °C (njira ya DTA)	605 °C + / -3 °C (njira ya DTA
Ubwino wa pamwamba	Kupukuta mbali ziwiri	Kupukuta mbali ziwiri
M'mphepete mwa Chamfered	kuzungulira m'mphepete	kuzungulira m'mphepete

Makhalidwe Ofunika

1. Kapangidwe ka Crystal ndi Magwiridwe Amagetsi

· Kukhazikika kwa Crystallographic: 100% 4H-SiC polytype dominance, palibe ma inclusions ambiri (monga, 6H/15R), ndi XRD rocking curve full-width pa half-maximum (FWHM) ≤32.7 arcsec.
· Kuyenda Kwambiri kwa Chonyamulira: Kuyenda kwa ma elekitironi kwa 5,400 cm²/V·s (4H-SiC) ndi kuyenda kwa mabowo kwa 380 cm²/V·s, zomwe zimathandiza kupanga zida zama frequency apamwamba.
·Kulimba kwa Radiation: Imapirira 1 MeV neutron irradiation yokhala ndi malire a kuwonongeka kwa displacement a 1×10¹⁵ n/cm², yoyenera kugwiritsidwa ntchito mumlengalenga ndi nyukiliya.

2. Katundu wa Kutentha ndi Makina

· Kutentha Kwapadera Kwambiri: 4.9 W/cm·K (4H-SiC), katatu kuposa silicon, kuthandizira kugwira ntchito pamwamba pa 200°C.
· Kuchuluka kwa Kutentha Kochepa: CTE ya 4.0×10⁻⁶/K (25–1000°C), kuonetsetsa kuti ikugwirizana ndi ma CD okhala ndi silicon ndikuchepetsa kupsinjika kwa kutentha.

3. Kuwongolera ndi Kukonza Zolakwika Molondola
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· Kuchuluka kwa Micropipe: <0.3 cm⁻² (ma wafer a mainchesi 8), kuchuluka kwa dislocation <1,000 cm⁻² (kutsimikiziridwa kudzera mu KOH etching).
· Ubwino wa pamwamba: CMP-yopukutidwa mpaka Ra <0.2 nm, ikukwaniritsa zofunikira za EUV lithography-grade flatness.

Mapulogalamu Ofunika

Domeni	Zochitika Zogwiritsira Ntchito	Ubwino Waukadaulo
Kulankhulana kwa Ma Optical	Ma laser a 100G/400G, ma module a silicon photonics hybrid	Ma substrates a mbewu za InP amalola kuti pakhale bandgap yolunjika (1.34 eV) ndi heteroepitaxy yochokera ku Si, zomwe zimachepetsa kutayika kwa ma coupling a optical.
Magalimoto Atsopano a Mphamvu	Ma inverter amphamvu a 800V, ma charger omwe ali mkati (OBC)	Ma substrates a 4H-SiC amatha kupirira >1,200 V, zomwe zimachepetsa kutayika kwa conduction ndi 50% ndi voliyumu ya dongosolo ndi 40%.
Kulumikizana kwa 5G	Zipangizo za RF za Millimeter-wave (PA/LNA), zokulitsa mphamvu za siteshoni yoyambira	Ma substrates a SiC oteteza pang'ono (resistivity >10⁵ Ω·cm) amalola kuphatikiza kwapamwamba kwambiri (60 GHz+).
Zida Zamakampani	Masensa otentha kwambiri, ma transformer amagetsi, zowunikira za nyukiliya	Ma substrates a mbewu za InSb (0.17 eV bandgap) amapereka mphamvu ya maginito mpaka 300%@10 T.

Ma Wafer a LiTaO₃ - Makhalidwe Ofunika

1. Kugwira Ntchito Kwabwino Kwambiri kwa Piezoelectric

· Ma coefficients apamwamba a piezoelectric (d₃₃~8-10 pC/N, K²~0.5%) amayatsa zida za SAW/BAW zapamwamba zomwe zimataya mphamvu <1.5dB pa zosefera za 5G RF

· Kuphatikiza kwabwino kwambiri kwamagetsi kumathandizira mapangidwe a fyuluta ya bandwidth (≥5%) ya mapulogalamu a sub-6GHz ndi mmWave

2. Katundu Wowoneka

· Kuwonekera bwino kwa Broadband (>70% yotumizira kuchokera ku 400-5000nm) kwa ma modulators a electro-optic omwe amafikira bandwidth ya >40GHz

· Kuthekera kwamphamvu kwa kuwala kosakhala kwa mzere (χ⁽²⁾~30pm/V) kumathandiza kupanga bwino kwachiwiri kwa harmonic (SHG) mumakina a laser

3. Kukhazikika kwa Zachilengedwe

· Kutentha kwakukulu kwa Curie (600°C) kumasunga yankho la piezoelectric m'malo ozungulira magalimoto (-40°C mpaka 150°C)

· Kusagwira ntchito kwa mankhwala motsutsana ndi ma acid/alkali (pH1-13) kumatsimikizira kudalirika kwa ntchito zama sensor zamafakitale

4. Kutha Kusintha Zinthu Mwamakonda

· Uinjiniya wowongolera: X-cut (51°), Y-cut (0°), Z-cut (36°) kuti mupeze mayankho a piezoelectric okonzedwa bwino.

· Zosankha za doping: Mg-doped (kukana kuwonongeka kwa kuwala), Zn-doped (d₃₃ yowonjezeredwa)

· Kumaliza pamwamba: Kupukuta kokonzeka ndi Epitaxial (Ra<0.5nm), ITO/Au metallization

Ma Wafer a LiTaO₃ - Ntchito Zoyambira

1. Ma module a RF Front-End

· Zosefera za 5G NR SAW (Band n77/n79) zokhala ndi kutentha koyenera kwa pafupipafupi (TCF) <|-15ppm/°C|

· Ma resonator a BAW a Ultra-wideband a WiFi 6E/7 (5.925-7.125GHz)

2. Ma Photonics Ophatikizidwa

· Ma modulators a Mach-Zehnder othamanga kwambiri (>100Gbps) kuti azitha kulumikizana bwino ndi kuwala

· Zipangizo zoyezera infrared za QWIP zokhala ndi ma wavelength odulidwa omwe amatha kusinthidwa kuyambira 3-14μm

3. Zamagetsi Zamagetsi Zamagalimoto

· Masensa oimika magalimoto a Ultrasonic okhala ndi ma frequency ogwirira ntchito >200kHz

· Ma transducer a TPMS piezoelectric omwe amapulumuka kutentha kwa -40°C mpaka 125°C

4. Machitidwe Oteteza

· Zosefera za EW receiver zomwe zimakanidwa ndi >60dB kunja kwa band

· Mawindo a IR ofufuza missile omwe amatumiza ma radiation a MWIR a 3-5μm

5. Ukadaulo Watsopano

· Ma transducer a quantum opangidwa ndi maso kuti asinthe ma microwave kukhala kuwala

· Ma PMUT arrays a kujambula kwa ultrasound yachipatala (>20MHz resolution)

Ma Wafer a LiTaO₃ - Ntchito za XKH

1. Kuyang'anira Unyolo Wopereka Zinthu

· Kukonza boule-to-wafer ndi nthawi yotsogolera ya masabata anayi kuti mudziwe zomwe zafotokozedwa muzolembazo.

· Kupanga bwino mtengo kumapereka phindu la 10-15% pamtengo poyerekeza ndi opikisana nawo

2. Mayankho Opangidwa Mwamakonda

· Kudula kwapadera kwa mawonekedwe: 36°±0.5° Y-cut kuti SAW igwire bwino ntchito

· Zosakaniza zosakaniza: MgO (5mol%) zogwiritsira ntchito kuwala

Ntchito zogwiritsira ntchito zitsulo: Cr/Au (100/1000Å) electrode patterning

3. Thandizo laukadaulo

· Kufotokozera zinthu: XRD rocking curves (FWHM<0.01°), AFM survey surface

· Kuyerekezera chipangizo: Kupanga chitsanzo cha FEM kwa kukonza kapangidwe ka fyuluta ya SAW

Mapeto

Ma wafer a LiTaO₃ akupitilizabe kupangitsa kuti ukadaulo upite patsogolo pa kulumikizana kwa RF, ma photonics ophatikizika, ndi masensa oteteza chilengedwe. Ukatswiri wa XKH pa zinthu, kulondola kwa kupanga, komanso kuthandizira ukadaulo wa mapulogalamu kumathandiza makasitomala kuthana ndi zovuta pakupanga makina amagetsi a m'badwo watsopano.