LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp ya 5G/6G Communications

Kufotokozera Kwachidule:

LiTaO3 Wafer (lithium tantalate wafer), chinthu chofunikira kwambiri pa semiconductors ndi ma optoelectronics am'badwo wachitatu, imathandizira kutentha kwake kwa Curie (610°C), mawonekedwe owoneka bwino (0.4–5.0 μm), piezoelectric coefficient (d33 > 1,500 ditoelectric 2%), ndi kutayika kwatsika Kulumikizana kwa 5G, kuphatikiza zithunzi, ndi zida za quantum. Pogwiritsa ntchito matekinoloje apamwamba kwambiri opangira zinthu monga transport vapor transport (PVT) ​ ndi chemical vapor deposition (CVD), XKH amapereka X/Y/Z-cut, 42°Y-cut, and periodically poled poled (PPLT)mumawonekedwe a mainchesi 2–8, okhala ndi makulidwe a pamwamba (Ra) <0.1 cm ² ndi microdensity <0.1 ² Ntchito zathu zikuphatikizapo Fe doping, kuchepetsa mankhwala, ndi Smart-Cut heterogeneous integration, kuthana ndi zosefera zowoneka bwino kwambiri, zowunikira ma infrared, ndi magwero a kuwala kwa quantum. Izi zimapangitsa kuti pakhale zotsogola mu miniaturization, magwiridwe antchito apamwamba kwambiri, komanso kukhazikika kwamafuta, kufulumizitsa kulowetsa m'malo m'nyumba muukadaulo wofunikira.


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  • Mawonekedwe

    Zosintha zaukadaulo

    Dzina Optical-grade LiTaO3 Mlingo wa tebulo la mawu LiTaO3
    Axial Z kudula + / - 0,2 ° 36 ° Y kudula / 42 ° Y kudula / X kudula

    (+ / - 0.2 °)

    Diameter 76.2mm + / - 0.3mm/

    100 ± 0.2mm

    76.2mm + /-0.3mm

    100mm +/-0.3mm 0r 150±0.5mm

    Datum ndege 22mm +/- 2mm 22mm +/-2mm

    32mm + 2mm

    Makulidwe 500um +/- 5mm

    1000um +/- 5mm

    500um +/-20mm

    350um +/-20mm

    TTV ≤10um ≤10um
    Curie kutentha 605 °C + / - 0.7 °C (DTA njira) 605 °C + / -3 °C (DTA njira
    Ubwino wapamwamba Kupukuta kwa mbali ziwiri Kupukuta kwa mbali ziwiri
    Chamfered m'mphepete kuzungulira m'mphepete kuzungulira m'mphepete

     

    Makhalidwe Ofunikira

    1.Magwiridwe Amagetsi ndi Owoneka
    · Electro-Optic Coefficient: r33 imafika ku 30 pm/V (X-cut), 1.5× apamwamba kuposa LiNbO3, kupangitsa kuti Ultra-wideband electro-optic modulation (> 40 GHz bandwidth).
    Mayankho a Broad Spectral: Kutumiza kwamtundu wa 0.4-5.0 μm (mamilimita 8 makulidwe), okhala ndi m'mphepete mwa mayamwidwe a ultraviolet otsika mpaka 280 nm, abwino kwa ma laser a UV ndi zida za madontho a quantum.
    · Low Pyroelectric Coefficient: dP/dT = 3.5×10⁻⁴ C/(m²·K), kuonetsetsa kukhazikika kwa masensa a infrared a kutentha kwambiri.

    2. Thermal ndi Mechanical Properties
    · High Thermal Conductivity: 4.6 W/m·K (X-cut), quadruple ya quartz, kusunga -200-500 ° C kutentha kwa njinga.
    · Low Thermal Expansion Coefficient: CTE = 4.1 × 10⁻⁶/K (25-1000 ° C), yogwirizana ndi silicon phukusi kuti muchepetse kupsinjika kwa kutentha.
    3.Defect Control and Processing Precision
    Kachulukidwe ka Micropipe: <0.1cm⁻² (zowotcha ma inchi 8), kusasunthika kwapang'onopang'ono <500cm⁻² (kutsimikiziridwa kudzera pa KOH etching).
    · Ubwino Pamwamba: CMP yopukutidwa mpaka Ra <0.5 nm, ikukwaniritsa zofunikira za EUV lithography-grade flatness.

    Mapulogalamu Ofunika Kwambiri

    Domain

    Ma Applications Scenarios

    Ubwino Waukadaulo

    Mawonekedwe a Optical Communications

    100G/400G DWDM lasers, silicon photonics hybrid modules

    LiTaO3 wafer yotakata yowoneka bwino komanso kutayika kochepa kwa waveguide (α <0.1 dB/cm) imathandizira kukula kwa C-band.

    5G/6G Communications

    Zosefera za SAW (1.8–3.5 GHz), zosefera za BAW-SMR

    42°Y-cut wafers amakwaniritsa Kt²>15%, kutulutsa kutayika kochepa (<1.5 dB) ndi kutsika kwakukulu (>30 dB).

    Quantum Technologies

    Zowunikira za chithunzi chimodzi, magwero osinthika a parametric

    Kuchuluka kopanda mzere (χ(2)=40 pm/V) ndi kuwerengera kwakuda kochepa (<100 count/s) kumawonjezera kukhulupirika kwachulukidwe.

    Industrial Sensing

    Kutentha kwamphamvu kwamphamvu, zosintha zamakono

    LiTaO3 wafer's piezoelectric reaction (g33>20 mV/m) ndi kulekerera kutentha kwambiri (>400 ° C) zimagwirizana ndi malo owopsa.

     

    Ntchito za XKH

    1. Custom Wafer Fabrication

    · Kukula ndi Kudula: 2-8-inch wafers ndi X/Y/Z-cut, 42°Y-cut, and custom angular cuts (±0.01° tolerance).

    · Doping Control: Fe, Mg doping kudzera mu njira ya Czochralski (concentration range 10¹⁶–10¹⁹cm⁻³) kuti apititse patsogolo ma electro-optic coefficients ndi kukhazikika kwamafuta.

    2.Advanced Process Technologies
    pa
    · Periodic Poling (PPLT): Ukadaulo wa Smart-Cut wa zophika za LTOI, kukwaniritsa ± 10 nm domain nthawi yolondola komanso kutembenuka kwafupipafupi (QPM).

    · Kuphatikizika Kwambiri: Si-based LiTaO3 composite wafers (POI) yokhala ndi makulidwe (300-600 nm) ndi matenthedwe matenthedwe mpaka 8.78 W/m·K kwa zosefera zapamwamba za SAW.

    3.Mayendedwe Oyendetsera Ubwino
    pa
    Kuyesa-Kumapeto-kumapeto: Raman spectroscopy (polytype verification), XRD (crystallinity), AFM (surface morphology), ndi kuyesa kufanana kwa kuwala (Δn <5×10⁻⁵).

    4.Global Supply Chain Support
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    · Mphamvu Zopanga: Kutulutsa kwa mwezi uliwonse> 5,000 wafers (8-inchi: 70%), ndi kutumiza kwadzidzidzi kwa maola 48.

    · Logistics Network: Kufalikira ku Europe, North America, ndi Asia-Pacific kudzera pamayendedwe apamlengalenga/panyanja okhala ndi zotengera zoyendetsedwa ndi kutentha.

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