LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp ya 5G/6G Communications
Zosintha zaukadaulo
Dzina | Optical-grade LiTaO3 | Mlingo wa tebulo la mawu LiTaO3 |
Axial | Z kudula + / - 0,2 ° | 36 ° Y kudula / 42 ° Y kudula / X kudula (+ / - 0.2 °) |
Diameter | 76.2mm + / - 0.3mm/ 100 ± 0.2mm | 76.2mm + /-0.3mm 100mm +/-0.3mm 0r 150±0.5mm |
Datum ndege | 22mm +/- 2mm | 22mm +/-2mm 32mm + 2mm |
Makulidwe | 500um +/- 5mm 1000um +/- 5mm | 500um +/-20mm 350um +/-20mm |
TTV | ≤10um | ≤10um |
Curie kutentha | 605 °C + / - 0.7 °C (DTA njira) | 605 °C + / -3 °C (DTA njira |
Ubwino wapamwamba | Kupukuta kwa mbali ziwiri | Kupukuta kwa mbali ziwiri |
Chamfered m'mphepete | kuzungulira m'mphepete | kuzungulira m'mphepete |
Makhalidwe Ofunikira
1.Magwiridwe Amagetsi ndi Owoneka
· Electro-Optic Coefficient: r33 imafika ku 30 pm/V (X-cut), 1.5× apamwamba kuposa LiNbO3, kupangitsa kuti Ultra-wideband electro-optic modulation (> 40 GHz bandwidth).
Mayankho a Broad Spectral: Kutumiza kwamtundu wa 0.4-5.0 μm (mamilimita 8 makulidwe), okhala ndi m'mphepete mwa mayamwidwe a ultraviolet otsika mpaka 280 nm, abwino kwa ma laser a UV ndi zida za madontho a quantum.
· Low Pyroelectric Coefficient: dP/dT = 3.5×10⁻⁴ C/(m²·K), kuonetsetsa kukhazikika kwa masensa a infrared a kutentha kwambiri.
2. Thermal ndi Mechanical Properties
· High Thermal Conductivity: 4.6 W/m·K (X-cut), quadruple ya quartz, kusunga -200-500 ° C kutentha kwa njinga.
· Low Thermal Expansion Coefficient: CTE = 4.1 × 10⁻⁶/K (25-1000 ° C), yogwirizana ndi silicon phukusi kuti muchepetse kupsinjika kwa kutentha.
3.Defect Control and Processing Precision
Kachulukidwe ka Micropipe: <0.1cm⁻² (zowotcha ma inchi 8), kusasunthika kwapang'onopang'ono <500cm⁻² (kutsimikiziridwa kudzera pa KOH etching).
· Ubwino Pamwamba: CMP yopukutidwa mpaka Ra <0.5 nm, ikukwaniritsa zofunikira za EUV lithography-grade flatness.
Mapulogalamu Ofunika Kwambiri
Domain | Ma Applications Scenarios | Ubwino Waukadaulo |
Mawonekedwe a Optical Communications | 100G/400G DWDM lasers, silicon photonics hybrid modules | LiTaO3 wafer yotakata yowoneka bwino komanso kutayika kochepa kwa waveguide (α <0.1 dB/cm) imathandizira kukula kwa C-band. |
5G/6G Communications | Zosefera za SAW (1.8–3.5 GHz), zosefera za BAW-SMR | 42°Y-cut wafers amakwaniritsa Kt²>15%, kutulutsa kutayika kochepa (<1.5 dB) ndi kutsika kwakukulu (>30 dB). |
Quantum Technologies | Zowunikira za chithunzi chimodzi, magwero osinthika a parametric | Kuchuluka kopanda mzere (χ(2)=40 pm/V) ndi kuwerengera kwakuda kochepa (<100 count/s) kumawonjezera kukhulupirika kwachulukidwe. |
Industrial Sensing | Kutentha kwamphamvu kwamphamvu, zosintha zamakono | LiTaO3 wafer's piezoelectric reaction (g33>20 mV/m) ndi kulekerera kutentha kwambiri (>400 ° C) zimagwirizana ndi malo owopsa. |
Ntchito za XKH
1. Custom Wafer Fabrication
· Kukula ndi Kudula: 2-8-inch wafers ndi X/Y/Z-cut, 42°Y-cut, and custom angular cuts (±0.01° tolerance).
· Doping Control: Fe, Mg doping kudzera mu njira ya Czochralski (concentration range 10¹⁶–10¹⁹cm⁻³) kuti apititse patsogolo ma electro-optic coefficients ndi kukhazikika kwamafuta.
2.Advanced Process Technologies
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· Periodic Poling (PPLT): Ukadaulo wa Smart-Cut wa zophika za LTOI, kukwaniritsa ± 10 nm domain nthawi yolondola komanso kutembenuka kwafupipafupi (QPM).
· Kuphatikizika Kwambiri: Si-based LiTaO3 composite wafers (POI) yokhala ndi makulidwe (300-600 nm) ndi matenthedwe matenthedwe mpaka 8.78 W/m·K kwa zosefera zapamwamba za SAW.
3.Mayendedwe Oyendetsera Ubwino
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Kuyesa-Kumapeto-kumapeto: Raman spectroscopy (polytype verification), XRD (crystallinity), AFM (surface morphology), ndi kuyesa kufanana kwa kuwala (Δn <5×10⁻⁵).
4.Global Supply Chain Support
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· Mphamvu Zopanga: Kutulutsa kwa mwezi uliwonse> 5,000 wafers (8-inchi: 70%), ndi kutumiza kwadzidzidzi kwa maola 48.
· Logistics Network: Kufalikira ku Europe, North America, ndi Asia-Pacific kudzera pamayendedwe apamlengalenga/panyanja okhala ndi zotengera zoyendetsedwa ndi kutentha.


