6inch 150mm Silicon Carbide SiC Wafers 4H-N mtundu wa MOS kapena SBD Production Research ndi Dummy kalasi

6inch 150mm Silicon Carbide SiC Wafers 4H-N mtundu wa MOS kapena SBD Production Research ndi kalasi ya Dummy Featured Image

Kufotokozera Kwachidule:

Gawo la 6-inch silicon carbide single crystal substrate ndi chinthu chochita bwino kwambiri chokhala ndi thupi komanso mankhwala. Wopangidwa kuchokera ku zinthu zoyera kwambiri za silicon carbide single crystal, amawonetsa kutenthetsa kwapamwamba, kukhazikika kwamakina, komanso kukana kutentha kwambiri. Gawo laling'onoli, lopangidwa ndi njira zopangira zolondola komanso zida zapamwamba, lakhala chinthu chokonda kwambiri popanga zida zamagetsi zamagetsi m'magawo osiyanasiyana.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zogulitsa Tags

Minda Yofunsira

6-inch silicon carbide single crystal substrate imagwira ntchito yofunika kwambiri m'mafakitale angapo. Choyamba, amagwiritsidwa ntchito kwambiri m'makampani opanga ma semiconductor popanga zida zamagetsi zamagetsi zamphamvu kwambiri monga ma transistors amagetsi, ma frequency ophatikizika, ndi ma module amagetsi. Kutentha kwake kwapamwamba komanso kutentha kwapamwamba kumapangitsa kuti kutentha kwabwino kuwonongeke, zomwe zimapangitsa kuti zikhale bwino komanso zodalirika. Kachiwiri, zowotcha za silicon carbide ndizofunikira m'magawo ofufuzira pakupanga zida zatsopano ndi zida. Kuphatikiza apo, silicon carbide wafer imapeza ntchito zambiri pantchito ya optoelectronics, kuphatikiza kupanga ma LED ndi ma laser diode.

Zofotokozera Zamalonda

Gawo la 6-inch silicon carbide single crystal substrate lili ndi mainchesi 6 (pafupifupi 152.4 mm). Ukali pamwamba ndi Ra <0.5 nm, ndi makulidwe ndi 600 ± 25 μm. Gawoli likhoza kusinthidwa ndi mtundu wa N kapena P-mtundu wa conductivity, kutengera zofuna za makasitomala. Kuphatikiza apo, imawonetsa kukhazikika kwamakina, komwe kumatha kupirira kupsinjika ndi kugwedezeka.

Diameter		150 ± 2.0mm (6inch)
Makulidwe		350μm±25μm
Kuwongolera		Pa axis: <0001> ± 0.5 °		Kuchokera pa olamulira: 4.0 ° ku 1120± 0.5 °
Polytype		4H
Kukaniza (Ω·cm)	4H-N	0.015~0.028 Ω·cm/0.015~0.025ohm ·cm
	4/6H-SI	>1E5
Primary flat orientation		{10-10}±5.0°
Kutalika koyambira kwaphwando (mm)		47.5 mm ± 2.5 mm
M'mphepete		Chamfer
TTV / Bow / Warp (um)		≤15/≤40/≤60
AFM Front (Si-face)		Chipolishi Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm(10mm*10mm)	≤5μm(10mm*10mm)		≤10μm(10mm*10mm)
TTV		≤5μm	≤10μm		≤15μm
Peel/maenje/ming'alu/kuipitsidwa/madontho/madontho		Palibe	Palibe		Palibe
indents		Palibe	Palibe		Palibe

Gawo la 6-inch silicon carbide single crystal substrate ndi chinthu chogwira ntchito kwambiri chomwe chimagwiritsidwa ntchito kwambiri m'mafakitale a semiconductor, kafukufuku, andoptoelectronics. Amapereka matenthedwe abwino kwambiri amafuta, kukhazikika kwamakina, komanso kukana kutentha kwambiri, zomwe zimapangitsa kuti zikhale zoyenera kupanga zida zamagetsi zamagetsi zamphamvu kwambiri komanso kafukufuku wazinthu zatsopano. Timapereka mafotokozedwe osiyanasiyana komanso zosankha makonda kuti tikwaniritse zofuna za makasitomala osiyanasiyana.Lumikizanani nafe kuti mumve zambiri za silicon carbide wafers!