6 Inchi Conductive SiC Composite Substrate 4H Diameter 150mm Ra≤0.2nm Warp≤35μm

Kufotokozera Kwachidule:

Motsogozedwa ndi kufunafuna kwamakampani opanga ma semiconductor kuti azichita bwino komanso kutsika mtengo, gawo laling'ono la 6-inch conductive SiC latulukira. Kupyolera muukadaulo waukadaulo wophatikizika wazinthu zatsopano, chowotcha cha 6-inchichi chimakwaniritsa 85% ya magwiridwe antchito amtundu wama 8-inch pomwe amangotengera 60% yokha. Zipangizo zamagetsi zomwe zimagwiritsidwa ntchito tsiku ndi tsiku monga malo opangira magetsi atsopano, ma module a 5G base station power, komanso ma drive-frequency drives pazida zam'nyumba zapamwamba mwina akugwiritsa ntchito magawo amtunduwu. Ukadaulo wathu wapatent wa multilayer epitaxial kukula umathandizira kuti pakhale ma atomiki ophatikizika amtundu wa atomiki pazikhazikiko za SiC, zokhala ndi kachulukidwe kawonekedwe kochepera 1 × 10¹¹/cm²·eV - zomwe zafika pamlingo wotsogola padziko lonse lapansi.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Zosintha zaukadaulo

Zinthu	Kupangakalasi	Dummykalasi
Diameter	6-8 inchi	6-8 inchi
Makulidwe	350/500±25.0 μm	350/500±25.0 μm
Polytype	4H	4H
Kukaniza	0.015-0.025 ohm · masentimita	0.015-0.025 ohm · masentimita
TTV	≤5 μm	≤20 μm
Warp	≤35 μm	≤55 μm
Pamaso (Si-nkhope) roughness	Ra≤0.2 nm (5μm×5μm)	Ra≤0.2 nm (5μm×5μm)

Zofunika Kwambiri

1.Cost Phindu: Gawo lathu la 6-inch conductive SiC composite substrate limagwiritsa ntchito ukadaulo wa "graded buffer layer" womwe umakulitsa kapangidwe kazinthu kuti kuchepetsa mtengo wazinthu zopangira ndi 38% ndikusunga magwiridwe antchito amagetsi. Miyezo yeniyeni ikuwonetsa kuti zida za 650V MOSFET zogwiritsa ntchito gawo lapansili zimapeza kutsika kwa 42% pamtengo pagawo lililonse poyerekeza ndi njira zokhazikika, zomwe ndizofunikira kulimbikitsa kukhazikitsidwa kwa zida za SiC mumagetsi ogula.
2.Katundu Woyendetsa Bwino Kwambiri: Kupyolera mu ndondomeko yolondola ya nitrogen doping control, gawo lathu la 6-inch conductive SiC composite gawo lapansi limapindula kwambiri-low resistivity ya 0.012-0.022Ω·cm, ndi kusinthasintha komwe kumayendetsedwa mkati mwa ± 5%. Makamaka, timakhalabe ndi kusagwirizana ngakhale mkati mwa 5mm m'mphepete mwa gawo la chofufumitsa, kuthetsa vuto lomwe lakhalapo kwakanthawi pamsika.
3.Thermal Performance: Gawo la 1200V/50A lopangidwa pogwiritsa ntchito gawo lathu lapansi likuwonetsa kutentha kwa 45 ℃ komwe kumakwera pamwamba pazigawo zonse zonyamula katundu - 65 ℃ kutsika kuposa zida zofananira ndi silicon. Izi zimathandizidwa ndi gulu lathu la "3D thermal channel" lomwe limapangitsa kuti lateral matenthedwe matenthedwe akhale 380W/m·K ndi vertical conductivity matenthedwe kufika 290W/m·K.
Kugwirizana kwa 4.Process: Kwa mawonekedwe apadera a 6-inch conductive SiC composite substrates, tinapanga ndondomeko yofananira ya laser dicing yomwe ikukwaniritsa 200mm / s kudula liwiro pamene tikuyang'anira m'mphepete mwachitsulo pansi pa 0.3μm. Kuphatikiza apo, timapereka zosankha zamtundu wa pre-nickel-plated zomwe zimathandizira kulumikizana mwachindunji, kupulumutsa makasitomala njira ziwiri.

Main Applications

Zida Zofunika Kwambiri za Gridi:

M'makina otumizira ma ultra-high voltage direct current (UHVDC) omwe amagwira ntchito pa ± 800kV, zida za IGCT zogwiritsa ntchito magawo athu a 6-inch conductive SiC amawonetsa kupititsa patsogolo kodabwitsa. Zidazi zimakwaniritsa kuchepetsedwa kwa 55% pakusintha zotayika panthawi yosinthira, pomwe zikuwonjezera magwiridwe antchito onse kupitilira 99.2%. The substrates' superior thermal conductivity (380W/m·K) imathandizira mapangidwe osinthira pang'ono omwe amachepetsa phazi la substation ndi 25% poyerekeza ndi mayankho okhazikika a silicon.

New Energy Vehicle Powertrains:

Makina oyendetsa omwe amaphatikiza magawo athu a 6-inch conductive SiC composite amakwaniritsa kachulukidwe kamphamvu ka inverter ka 45kW/L - kuwongolera kwa 60% kuposa kapangidwe kawo ka silicon ka 400V. Chochititsa chidwi kwambiri, makinawa amasunga bwino 98% pa kutentha konse kogwira ntchito kuyambira -40 ℃ mpaka +175 ℃, kuthetsa zovuta zanyengo yozizira zomwe zasokoneza kutengera kwa EV kumadera akumpoto. Kuyesa kwenikweni kwadziko lapansi kukuwonetsa kuwonjezeka kwa 7.5% m'nyengo yozizira kwa magalimoto okhala ndi ukadaulo uwu.

Magalimoto Osiyanasiyana a Industrial:

Kukhazikitsidwa kwa magawo athu mu ma module anzeru amphamvu (IPMs) a makina a servo a mafakitale akusintha makina opanga makina. M'malo opangira makina a CNC, ma module awa amapereka 40% mwachangu kuyankha kwagalimoto (kuchepetsa nthawi yothamanga kuchokera pa 50ms mpaka 30ms) ndikudula phokoso lamagetsi ndi 15dB mpaka 65dB (A).

Consumer Electronics:

Kusintha kwamagetsi kwa ogula kukupitilirabe ndi magawo athu omwe amathandizira ma charger a 65W GaN am'tsogolo. Ma adapter amagetsi ophatikizikawa amatsitsa 30% voliyumu (mpaka 45cm³) pomwe akukhalabe ndi mphamvu zonse, chifukwa cha kusintha kwapamwamba kwa mapangidwe a SiC. Kujambula kotentha kumawonetsa kutentha kwakukulu kwa 68 ° C panthawi yogwira ntchito mosalekeza - 22 ° C ozizira kusiyana ndi mapangidwe wamba - kumapangitsa kuti mankhwala azikhala ndi moyo komanso chitetezo.

XKH Customization Services

XKH imapereka chithandizo chambiri chosinthira makonda a 6-inch conductive SiC composite substrates:

Makulidwe Mwamakonda Anu: Zosankha kuphatikiza 200μm, 300μm, ndi 350μm
2. Resistivity Control: Kukhazikika kosinthika kwa mtundu wa n-doping kuchokera pa 1×10¹⁸ mpaka 5×10¹⁸ cm⁻³

3. Crystal Orientation: Thandizo la maulendo angapo kuphatikizapo (0001) off-axis 4 ° kapena 8 °

4. Ntchito Zoyesa: Malizitsani malipoti oyeserera a wafer-level parameter test

Nthawi yathu yotsogola yapano kuchokera ku prototyping mpaka kupanga zochuluka imatha kukhala yayifupi ngati masabata a 8. Kwa makasitomala anzeru, timapereka ntchito zopititsa patsogolo njira zodzipatulira kuti zitsimikizire kuti zikugwirizana bwino ndi zofunikira za chipangizocho.