100mm 4inch GaN pa Sapphire Epi-wosanjikiza mkate Gallium nitride epitaxial wafer

Kufotokozera Kwachidule:

Gallium nitride epitaxial pepala ndi woimira m'badwo wachitatu wa lonse gulu kusiyana semiconductor semiconductor epitaxial zipangizo, amene ali katundu kwambiri monga lonse gulu kusiyana, mkulu kusweka kumunda mphamvu, mkulu matenthedwe madutsidwe, mkulu elekitironi machulukitsidwe kuthamanga liwiro, amphamvu cheza kukana ndi mkulu. kukhazikika kwamankhwala.

Titumizireni imelo

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Zolemba Zamalonda

Kukula kwa GaN blue LED quantum well structure.Tsatanetsatane wa ndondomekoyi ndi motere

(1) Kuwotcha kwapamwamba kwambiri, gawo lapansi la safiro limayamba kutenthedwa mpaka 1050 ℃ mumlengalenga wa haidrojeni, cholinga chake ndikuyeretsa gawo lapansi;

(2) Pamene kutentha kwa gawo lapansi kumatsikira ku 510 ℃, gawo laling'ono la GaN/AlN lokhala ndi makulidwe a 30nm limayikidwa pamwamba pa gawo lapansi la safiro;

(3) Kutentha kukwera kwa 10 ℃, zimene gasi ammonia, trimethylgallium ndi silane ndi jekeseni, motero kulamulira lolingana otaya mlingo, ndi pakachitsulo-doped N-mtundu GaN wa 4um makulidwe wakula;

(4) The anachita mpweya wa trimethyl zotayidwa ndi trimethyl gallium ntchito kukonzekera pakachitsulo-doped N-mtundu A-makontinenti ndi makulidwe a 0.15um;

(5) 50nm Zn-doped InGaN inakonzedwa ndi jekeseni trimethylgallium, trimethylindium, diethylzinc ndi ammonia pa kutentha kwa 8O0 ℃ ndi kulamulira maulendo osiyanasiyana otaya motsatira;

(6) Kutentha kunawonjezeka kufika ku 1020 ℃, trimethylaluminium, trimethylgallium ndi bis (cyclopentadienyl) magnesium anabayidwa kuti akonzekere 0.15um Mg doped P-mtundu wa AlGaN ndi 0.5um Mg doped P-mtundu wa G shuga wa magazi;

(7) Kanema wapamwamba kwambiri wa P-mtundu wa GaN Sibuyan adapezedwa mwa kulowetsedwa mumlengalenga wa nitrogen pa 700 ℃;

(8) Etching pa P-mtundu G stasis pamwamba kuwulula N-mtundu G stasis pamwamba;

(9) Mpweya wa mbale zolumikizana za Ni/A pa p-GaNI, kutuluka kwa △/Al mbale zolumikizana pa ll-GaN pamwamba kupanga maelekitirodi.

Zofotokozera

Kanthu	GaN-TCU-C100	GaN-TCN-C100
Makulidwe	ndi 100 mm ± 0.1 mm
Makulidwe	4.5 ± 0.5 um Ikhoza makonda
Kuwongolera	C-ndege(0001) ± 0.5°
Mtundu Woyendetsa	N-mtundu (Wosasinthidwa)	N-mtundu (Si-doped)
Kukana (300K)	<0.5 Q・cm	<0.05 Q・cm
Carrier Concentration	<5x10¹⁷cm^-3	> 1x10¹⁸cm^-3
Kuyenda	~ 300 cm²/Vs	~ 200cm²/Vs
Dislocation Density	Pafupi ndi 5x10⁸cm^-2(owerengedwa ndi FWHMs of XRD)
Mapangidwe a gawo lapansi	GaN pa Sapphire(Mulingo: Njira ya SSP: DSP)
Malo Ogwiritsidwa Ntchito Pamwamba	90%
Phukusi	Zoyikidwa m'chipinda choyera cha kalasi 100, m'makaseti a 25pcs kapena mbiya imodzi yopyapyala, pansi pa mpweya wa nayitrogeni.