4H/6H-P 6inch SiC wafer Zero MPD kalasi Kupanga Gulu Dummy Kalasi

4H/6H-P 6inch SiC wafer Zero MPD giredi Kupanga Gulu la Dummy Gulu Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Mtundu wa 4H/6H-P wa 6-inch SiC wafer ndi chinthu chopangidwa ndi semiconductor chomwe chimagwiritsidwa ntchito popanga zida zamagetsi, chomwe chimadziwika chifukwa cha kutenthetsa kwake, kutentha kwamphamvu kwambiri, komanso kukana kutentha kwambiri ndi dzimbiri. Kalasi yopangira ndi Zero MPD (Micro Pipe Defect) imatsimikizira kudalirika kwake komanso kukhazikika pamagetsi amphamvu kwambiri. Zophika zopangira zida zimagwiritsidwa ntchito popanga zida zazikuluzikulu zowongolera bwino, pomwe zowotcha zamtundu wa dummy zimagwiritsidwa ntchito makamaka pakukonza zolakwika ndikuyesa zida. Zodziwika bwino za SiC zimapangitsa kuti zizigwiritsidwa ntchito kwambiri pazida zotentha kwambiri, zowotcha kwambiri, komanso zida zamagetsi zothamanga kwambiri, monga zida zamagetsi ndi zida za RF.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

4H/6H-P Mtundu wa SiC Composite Substrates Common parameter table

6 mainchesi awiri a Silicon Carbide (SiC) gawo lapansi Kufotokozera

Gulu			Zero MPD ProductionGulu (Z Gulu)	Standard ProductionGawo (P Gulu)	Dummy Grade (D Gulu)
Diameter			145.5 mm ~ 150.0 mm
Makulidwe			350 μm ± 25 μm
Wafer Orientation			-Offolamulira: 2.0 ° -4.0 ° molunjika [1120] ± 0.5 ° kwa 4H/6H-P, Pa olamulira:〈111〉± 0.5° kwa 3C-N
Kuchuluka kwa Micropipe			0cm-2
Kukaniza	p-mtundu 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-mtundu 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Chiyambi cha Flat Orientation		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Utali Woyambira Wathyathyathya			32.5 mm ± 2.0 mm
Kutalika kwa Sekondale			18.0 mm ± 2.0 mm
Sekondale Flat Orientation			Silicon nkhope m'mwamba: 90 ° CW. kuchokera ku Prime flat ± 5.0 °
Kupatula M'mphepete			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ukali			Chipolishi Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Mphepete Mng'alu Mwa Kuwala Kwakukulu Kwambiri			Palibe		Utali wophatikiza ≤ 10 mm, utali umodzi≤2 mm
Hex Plates Mwa Kuwala Kwakukulu Kwambiri			Malo owonjezera ≤0.05%		Malo owonjezera ≤0.1%
Madera a Polytype Mwa Kuwala Kwakukulu Kwambiri			Palibe		Malo owonjezera≤3%
Mawonekedwe a Carbon Inclusions			Malo owonjezera ≤0.05%		Malo owonjezera ≤3%
Silicon Surface Scratches Ndi Kuwala Kwakukulu Kwambiri			Palibe		Kutalikirana kutalika≤1 × awiri wafer
Mphepete Chips Mmwamba Mwamphamvu Kuwala			Palibe chololedwa ≥0.2mm m'lifupi ndi kuya		5 zololedwa, ≤1 mm iliyonse
Silicon Surface Kuipitsidwa Ndi High Intensity			Palibe
Kupaka			Makaseti amitundu yopyapyala kapena Chidebe Chowotcha Chimodzi

Ndemanga:

※ Malire opumira amagwira ntchito pamtunda wonse kupatula malo opatulapo. # Zikandazo ziyenera kuyang'aniridwa pa Si face o

Mtundu wa 4H/6H-P wa 6-inch SiC wafer wokhala ndi Zero MPD giredi ndi kupanga kapena dummy grade imagwiritsidwa ntchito kwambiri pamapulogalamu apamwamba apakompyuta. Kutentha kwake kwabwino kwambiri, ma voltages otsika kwambiri, komanso kukana madera ovuta kumapangitsa kuti ikhale yabwino pamagetsi amagetsi, monga ma switch amphamvu kwambiri ndi ma inverters. Gawo la Zero MPD limatsimikizira zolakwika zochepa, zofunika kwambiri pazida zodalirika kwambiri. Zophika zopangira zida zimagwiritsidwa ntchito popanga zida zazikulu zamagetsi ndi ntchito za RF, pomwe magwiridwe antchito ndi kulondola ndikofunikira. Komano, zowotcha zamtundu wa dummy zimagwiritsidwa ntchito poyesa kukonza, kuyesa zida, ndi ma prototyping, zomwe zimathandizira kuwongolera kosasintha kwazinthu zopanga semiconductor.

Ubwino wa magawo ophatikizika a N-mtundu wa SiC umaphatikizapo

High Thermal Conductivity: Chophika cha 4H/6H-P SiC chimatulutsa kutentha bwino, ndikupangitsa kuti ikhale yoyenera kutentha kwambiri komanso zamagetsi zamagetsi.
High Breakdown Voltage: Kuthekera kwake kuthana ndi ma voltages apamwamba popanda kulephera kumapangitsa kuti ikhale yabwino pamagetsi amagetsi ndi ma voliyumu apamwamba kwambiri.
Zero MPD (Micro Pipe Defect) Giredi: Kachulukidwe kakang'ono kachilema kumatsimikizira kudalirika komanso magwiridwe antchito, ndikofunikira pazida zamagetsi zomwe zimafunikira.
Production-Giredi kwa Mass Manufacturing: Yoyenera kupanga zida zazikulu za semiconductor zapamwamba zokhala ndi miyezo yolimba.
Dummy-Giredi Yoyesa ndi Kuwongolera: Imathandiza kukhathamiritsa, kuyesa zida, ndi ma prototyping popanda kugwiritsa ntchito zowotcha zotsika mtengo zopangira.

Ponseponse, zowotcha za 4H/6H-P 6-inchi za SiC zokhala ndi giredi ya Zero MPD, kalasi yopangira, ndi kalasi ya dummy zimapereka zabwino zambiri pakupanga zida zamagetsi zogwira ntchito kwambiri. Zophika izi ndizopindulitsa makamaka pamapulogalamu omwe amafunikira kutentha kwambiri, kachulukidwe kamphamvu, komanso kutembenuza mphamvu moyenera. Gulu la Zero MPD limatsimikizira kuti pali zolakwika zochepa pazida zodalirika komanso zokhazikika, pomwe zopangira zopangira zimathandizira kupanga kwakukulu kowongolera bwino kwambiri. Zophika za Dummy-grade zimapereka njira yotsika mtengo pakukhathamiritsa ndi kuwongolera zida, kuwapangitsa kukhala ofunikira kwambiri pakupanga makina olondola kwambiri a semiconductor.