4H/6H-P 6inch SiC wafer Zero MPD grade Production Giredi Dummy Giredi

Kufotokozera Kwachidule:

Wafer wa mtundu wa 4H/6H-P wa mainchesi 6 SiC ndi chinthu chopangidwa ndi semiconductor chomwe chimagwiritsidwa ntchito popanga zida zamagetsi, chodziwika bwino chifukwa cha kutentha kwake kotentha, magetsi owonongeka kwambiri, komanso kukana kutentha kwambiri komanso dzimbiri. Mtundu wa kupanga ndi Zero MPD (Micro Pipe Defect) umatsimikizira kudalirika kwake komanso kukhazikika kwake pamagetsi amphamvu kwambiri. Ma wafer a mtundu wa kupanga amagwiritsidwa ntchito popanga zida zazikulu ndi kuwongolera bwino khalidwe, pomwe ma wafer a mtundu wa dummy amagwiritsidwa ntchito makamaka pokonza zolakwika ndi kuyesa zida. Kapangidwe kabwino ka SiC kamapangitsa kuti igwiritsidwe ntchito kwambiri pazida zamagetsi zotentha kwambiri, zamagetsi apamwamba, komanso zamagetsi apamwamba, monga zida zamagetsi ndi zida za RF.


Mawonekedwe

4H/6H-P Mtundu wa SiC Composite Substrates Tebulo la magawo ofanana

6 Chigawo cha Silicon Carbide (SiC) cha mainchesi awiri Kufotokozera

Giredi Kupanga kwa MPD KopandaGiredi (Z) Giredi) Kupanga KokhazikikaGiredi (P) Giredi) Giredi Yopanda Chilungamo (D Giredi)
M'mimba mwake 145.5 mm ~ 150.0 mm
Kukhuthala 350 μm ± 25 μm
Kuwongolera kwa Wafer -Offmzere wozungulira: 2.0°-4.0° kulowera [1120] ± 0.5° pa 4H/6H-P, Pa mzere wozungulira:〈111〉± 0.5° pa 3C-N
Kuchuluka kwa mapaipi ang'onoang'ono 0 cm-2
Kusakhazikika mtundu wa p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
n-mtundu 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Kuyang'ana Kwambiri Pang'onopang'ono 4H/6H-P -{1010} ± 5.0°
3C-N -{110} ± 5.0°
Utali Woyamba Wathyathyathya 32.5 mm ± 2.0 mm
Utali Wachiwiri Wathyathyathya 18.0 mm ± 2.0 mm
Kuyang'ana Kwachiwiri Kwapafupi Silikoni yoyang'ana mmwamba: 90° CW. kuchokera ku Prime flat ± 5.0°
Kupatula Mphepete 3 mm 6 mm
LTV/TTV/Uta/Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Kuuma Chipolishi Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm
Ming'alu ya Mphepete Yopangidwa ndi Kuwala Kwakukulu Kwambiri Palibe Kutalika kokwanira ≤ 10 mm, kutalika kamodzi ≤2 mm
Mbale za Hex Ndi Kuwala Kwakukulu Kwambiri Malo osonkhanitsidwa ≤0.05% Malo osonkhanitsidwa ≤0.1%
Malo Opangidwa ndi Polytype Ndi Kuwala Kwambiri Palibe Malo osonkhanitsidwa ≤3%
Kuphatikizidwa kwa Kaboni Yowoneka Malo osonkhanitsidwa ≤0.05% Malo osonkhanitsidwa ≤3%
Kukanda kwa Silicon Pamwamba Ndi Kuwala Kwambiri Palibe Kutalika kokwanira ≤1 × m'mimba mwake wa wafer
Ma Chips a M'mphepete Okhala ndi Mphamvu Yaikulu Palibe chololedwa m'lifupi ndi kuya kwa ≥0.2mm 5 zololedwa, ≤1 mm iliyonse
Kuipitsidwa kwa Silicon pamwamba ndi Mphamvu Yaikulu Palibe
Kulongedza Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer

Zolemba:

※ Malire a zolakwika amagwiritsidwa ntchito pamwamba pa wafer yonse kupatulapo malo olekanitsidwa ndi m'mphepete. # Mikwingwirima iyenera kuwonedwa pa nkhope ya Si o

Wafer wa 4H/6H-P wa mainchesi 6 SiC wokhala ndi giredi ya Zero MPD komanso wopanga kapena wopanga zinthu zongopeka amagwiritsidwa ntchito kwambiri pa ntchito zamagetsi zapamwamba. Kutulutsa kwake kwabwino kwambiri kwa kutentha, magetsi owonongeka kwambiri, komanso kukana malo ovuta kumapangitsa kuti ikhale yoyenera kugwiritsa ntchito zamagetsi zamagetsi, monga ma switch amphamvu kwambiri ndi ma inverter. Giredi ya Zero MPD imatsimikizira kuti pali zolakwika zochepa, zofunika kwambiri pazida zodalirika kwambiri. Ma wafer apamwamba opanga zinthu amagwiritsidwa ntchito popanga zida zamagetsi ndi ma RF ambiri, komwe magwiridwe antchito ndi kulondola ndizofunikira. Ma wafer apamwamba, kumbali ina, amagwiritsidwa ntchito poyesa njira, kuyesa zida, ndi kupanga ma prototyping, zomwe zimathandiza kuwongolera bwino khalidwe m'malo opangira zinthu za semiconductor.

Ubwino wa substrates za N-type SiC composite ndi monga

  • Kutentha Kwambiri: Wafer ya 4H/6H-P SiC imachotsa kutentha bwino, zomwe zimapangitsa kuti ikhale yoyenera kugwiritsidwa ntchito pamagetsi otentha kwambiri komanso amphamvu kwambiri.
  • Kuwonongeka Kwambiri kwa Voliyumu: Kutha kwake kuthana ndi ma voltage okwera popanda kulephera kumapangitsa kuti ikhale yoyenera kugwiritsa ntchito zamagetsi zamagetsi ndi ma switching amagetsi okwera.
  • Giredi ya Zero MPD (Micro Pipe Defect): Kuchulukana kochepa kwa zilema kumatsimikizira kudalirika ndi magwiridwe antchito apamwamba, zomwe ndizofunikira kwambiri pazida zamagetsi zomwe zimafuna mphamvu.
  • Kuchuluka kwa Kupanga Zinthu Zambiri: Yoyenera kupanga zida zazikulu za semiconductor zomwe zimagwira ntchito bwino kwambiri komanso miyezo yokhwima.
  • Giredi Yopanda Chilungamo Yoyesera ndi Kulinganiza: Zimathandiza kukonza njira, kuyesa zida, ndi kupanga zitsanzo popanda kugwiritsa ntchito ma wafer okwera mtengo kwambiri.

Ponseponse, ma wafer a 4H/6H-P 6-inch SiC okhala ndi giredi ya Zero MPD, giredi yopangira, ndi giredi yongopeka amapereka zabwino zazikulu pakupanga zida zamagetsi zogwira ntchito bwino. Ma wafer awa ndi othandiza kwambiri pakugwiritsa ntchito komwe kumafuna kutentha kwambiri, mphamvu zambiri, komanso kusintha mphamvu moyenera. Giredi ya Zero MPD imatsimikizira zolakwika zochepa kuti chipangizocho chigwire ntchito bwino komanso modalirika, pomwe ma wafer opangidwa amathandizira kupanga kwakukulu ndi zowongolera zamtundu wokhwima. Ma wafer ongopeka amapereka njira yotsika mtengo yokonzera bwino njira ndi kuwerengera zida, zomwe zimapangitsa kuti zikhale zofunikira kwambiri popanga semiconductor yolondola kwambiri.

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