2 inchi 50.8mm Sapphire Wafer C-Plane M-ndege R-ndege A-ndege Makulidwe 350um 430um 500um

2 inchi 50.8mm Sapphire Wafer C-Plane M-ndege ya R-ndege A-ndege Makulidwe 350um 430um 500um Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Sapphire ndi chinthu chophatikizika chapadera chakuthupi, mankhwala ndi kuwala, zomwe zimapangitsa kuti zisawonongeke kutentha kwambiri, kugwedezeka kwamafuta, kukokoloka kwamadzi ndi mchenga, komanso kukanda.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Kufotokozera kwamitundu yosiyanasiyana

Kuwongolera	C(0001)-Mzere		R(1-102)-Mzere		M(10-10) -Mzere	A(11-20)-Mzere
Katundu wakuthupi	C axis ili ndi kuwala kwa kristalo, ndipo nkhwangwa zina zimakhala ndi kuwala koyipa.Ndege C ndi yosalala, makamaka yodulidwa.		R-ndege yolimba pang'ono kuposa A.		M ndege imapondedwa mozungulira, yosavuta kudula, yosavuta kudula.	Kuuma kwa A-ndege ndikwambiri kuposa kwa C-ndege, yomwe imawonetseredwa mu kukana kuvala, kukana zikande ndi kuuma kwakukulu;Mbali ya A-ndege ndi ndege ya zigzag, yomwe ndi yosavuta kudula;
Mapulogalamu	Magawo a safiro a C-oriented amagwiritsidwa ntchito kukulitsa mafilimu osungidwa a III-V ndi II-VI, monga gallium nitride, omwe amatha kupanga zinthu zamtundu wa blue LED, laser diode, ndi infrared detector applications. Izi makamaka chifukwa ndondomeko ya kukula kwa kristalo wa safiro pamodzi ndi C-axis ndi yokhwima, mtengo wake ndi wochepa, thupi ndi mankhwala zimakhala zokhazikika, ndipo teknoloji ya epitaxy pa C-ndege ndi yokhwima komanso yokhazikika.		Kukula kwa gawo lapansi loyang'ana pa R kwamitundu yosiyanasiyana ya silicon extrasystals, yomwe imagwiritsidwa ntchito m'mabwalo ophatikizika a ma microelectronics. Kuphatikiza apo, mabwalo ophatikizika othamanga kwambiri komanso masensa opanikizika amathanso kupangidwa popanga filimu ya epitaxial silicon kukula.Gawo la R-mtundu lingagwiritsidwenso ntchito popanga lead, zida zina zopangira ma superconducting, zopinga zazikulu, gallium arsenide.		Amagwiritsidwa ntchito makamaka kukulitsa mafilimu osakhala a polar/semi-polar GaN epitaxial kuti apititse patsogolo kuwala kowala.	A-wokhazikika ku gawo lapansi amapanga chilolezo chofanana / chapakati, ndipo kutsekemera kwakukulu kumagwiritsidwa ntchito muukadaulo wa hybrid microelectronics.Ma superconductors otentha amatha kupangidwa kuchokera ku makhiristo a A-base elongated.
Processing mphamvu	Chitsanzo Sapphire Substrate (PSS) : Mumawonekedwe a Kukula kapena Etching, ma nanoscale enieni okhazikika ang'onoang'ono amapangidwa ndikupangidwa pagawo la safiro kuti azitha kuwongolera mawonekedwe a kuwala kwa LED, ndikuchepetsa kuwonongeka kwa kusiyana pakati pa GaN yomwe ikukula pamtengo wa safiro. , sinthani mtundu wa epitaxy, ndikuwonjezera mphamvu yamkati ya LED ndikuwonjezera mphamvu yakuchotsa kuwala. Komanso, safiro prism, galasi, mandala, dzenje, chulucho ndi mbali zina structural akhoza makonda malinga ndi zofunika kasitomala.
Chilengezo cha katundu	Kuchulukana	Kuuma	sungunuka mfundo	Refractive index (yowoneka ndi infrared)	Kutumiza (DSP)	Dielectric nthawi zonse
Chilengezo cha katundu	3.98g/cm3	9 (mohs)	2053 ℃	1.762 ~ 1.770	≥85%	11.58@300K pa C olamulira (9.4 pa Axis)

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Ena: 2 inchi 50.8mm Makulidwe 0.1mm 0.2mm 0.43mm Sapphire Wafer C-Plane M-ndege R-ndege A-ndege

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