150mm 200mm 6inch 8inch GaN pa Silicon Epi-wosanjikiza wafer Gallium nitride epitaxial wafer

Kufotokozera Kwachidule:

Gan Epi-layer wafer ya 6-inch ndi chinthu chapamwamba kwambiri cha semiconductor chomwe chili ndi zigawo za gallium nitride (GaN) zomwe zimapangidwa pagawo la silicon. Zomwe zili ndi zida zabwino kwambiri zoyendera zamagetsi ndipo ndizabwino kupanga zida zamphamvu kwambiri komanso zothamanga kwambiri za semiconductor.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zogulitsa Tags

Njira yopanga

Kupanga kumaphatikizapo kukulitsa zigawo za GaN pamtengo wa safiro pogwiritsa ntchito njira zapamwamba monga metal-organic chemical vapor deposition (MOCVD) kapena molecular beam epitaxy (MBE). Njira yoyikapo imachitika pansi pazikhalidwe zoyendetsedwa kuti zitsimikizire mtundu wapamwamba wa kristalo ndi filimu yofananira.

Mapulogalamu a 6inch GaN-On-Sapphire: 6-inch safiro substrate chips amagwiritsidwa ntchito kwambiri mu microwave communications, radar systems, wireless technology ndi optoelectronics.

Ena wamba ntchito monga

1. Rf mphamvu amplifier

2. Kuwala kwa LED makampani

3. Zida zoyankhulirana zopanda zingwe

4. Zipangizo zamagetsi m'malo otentha kwambiri

5. Zida za Optoelectronic

Mafotokozedwe azinthu

- Kukula: Kuzama kwa gawo lapansi ndi mainchesi 6 (pafupifupi 150 mm).

- Ubwino wam'mwamba: Pamwamba pake adapukutidwa bwino kuti apereke mawonekedwe abwino kwambiri agalasi.

- Makulidwe: Makulidwe a GaN wosanjikiza amatha kusinthidwa malinga ndi zofunikira.

- Kupaka: Gawoli limadzaza mosamala ndi zinthu zotsutsana ndi static kuti zisawonongeke panthawi yamayendedwe.

- Kuyika m'mphepete: Gawoli limakhala ndi m'mphepete mwapadera lomwe limathandizira kulumikizana ndikugwira ntchito panthawi yokonza chipangizocho.

- Magawo ena: Magawo apadera monga kuonda, resistivity ndi ndende ya doping zitha kusinthidwa malinga ndi zomwe makasitomala amafuna.

Ndi katundu wawo wapamwamba kwambiri komanso ntchito zosiyanasiyana, zowotcha za safiro za 6-inch ndi chisankho chodalirika pakupanga zida za semiconductor zapamwamba m'mafakitale osiyanasiyana.

Gawo lapansi	6" 1mm <111> p-mtundu Si	6" 1mm <111> p-mtundu Si
Epi ThickAvg	~5 uwu	~7 uwu
Epi ThickUnif	<2%	<2%
Kugwada	+/- 45um	+/- 45um
Kung'amba	<5mm	<5mm
Wokwera BV	> 1000V	> 1400 V
HEMT Al%	25-35%	25-35%
Mtengo wa HEMT ThickAvg	20-30 nm	20-30 nm
Insitu SiN Cap	5-60nm	5-60nm
2DEG gawo.	~10¹³cm^-2	~10¹³cm^-2
Kuyenda	~ 2000cm²/Vs (<2%)	~ 2000cm²/Vs (<2%)
Rsh	<330ohm/sq (<2%)	<330ohm/sq (<2%)