Pansi pa nthaka
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Wafa wa mainchesi 12 wa 4H-SiC wa magalasi a AR
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Zipangizo Zoyendetsera Kutentha kwa Diamond-Copper Composite
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HPSI SiC Wafer ≥90% Transmittance Optical Giredi ya Magalasi a AI/AR
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Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity ya Magalasi a Ar
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Ma Wafer a Epitaxial a 4H-SiC a MOSFET a Ultra-High Voltage (100–500 μm, mainchesi 6)
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SICOI (Silicon Carbide pa Insulator) Wafers SiC Film ON Silicon
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Chophimba Chopanda Choyera Kwambiri cha Sapphire Chosaphika Chogwiritsidwa Ntchito
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Crystal ya Sapphire Square Seed - Substrate Yokhazikika Pakukula kwa Sapphire Yopangidwa
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Silicon Carbide (SiC) Single-Crystal Substrate – 10×10mm Wafer
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer ya MOS kapena SBD
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SiC Epitaxial Wafer ya Zipangizo Zamagetsi – 4H-SiC, N-mtundu, Low Defect Density
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4H-N Mtundu wa SiC Epitaxial Wafer High Voltage High Frequency