Silicon Dioxide wafer SiO2 wafer wandiweyani Wopukutidwa, Prime And Test Grade

Silicon Dioxide chowotcha SiO2 chowotcha chokhuthala chopukutidwa, Prime And Test Grade Featured Image

Kufotokozera Kwachidule:

Thermal oxidation ndi chifukwa cha poyera silicon wophatikizika ndi osakaniza wothandizila oxidizing ndi kutentha kupanga wosanjikiza pakachitsulo woipa (SiO2) . Kampani yathu akhoza makonda silicon dioxide okusayidi flakes ndi magawo osiyanasiyana kwa makasitomala, ndi khalidwe kwambiri; makulidwe a oxide layer, compactness, uniformity ndi resistivity crystal orientation zonse zimayendetsedwa motsatira mfundo za dziko.

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Zogulitsa Tags

Kuyambitsa bokosi la wafer

Zogulitsa	Zowotcha za Thermal Oxide (Si+SiO2).
Njira Yopangira	Chithunzi cha LCVD
Kupukuta Pamwamba	SSP/DSP
Diameter	2inch/3inch/4inch/5inch/6inch
Mtundu	P mtundu / N mtundu
Kukhuthala kwa Oxidation Layer	100nm ~ 1000nm
Kuwongolera	<100> <111>
Kulimbana ndi magetsi	0.001-25000(Ω•cm)
Kugwiritsa ntchito	Ntchito synchrotron radiation chitsanzo chonyamulira, PVD/CVD ❖ kuyanika monga gawo lapansi, magnetron sputtering kukula chitsanzo, XRD, SEM,Mphamvu ya atomiki, ma infrared spectroscopy, fluorescence spectroscopy ndi magawo ena oyesa kusanthula, magawo a maselo a epitaxial kukula, kusanthula kwa X-ray kwa ma crystalline semiconductors.

Zophika za silicon oxide ndi mafilimu a silicon dioxide omwe amamera pamwamba pa zowotcha za silicon pogwiritsa ntchito mpweya wa okosijeni kapena nthunzi yamadzi pa kutentha kwakukulu (800 ° C ~ 1150 ° C) pogwiritsa ntchito njira yotenthetsera makutidwe ndi okosijeni yokhala ndi zida za chubu za ng'anjo ya mumlengalenga. makulidwe a ndondomeko ranges ku nanometers 50 kuti 2 microns, ndondomeko kutentha ndi madigiri 1100 Celsius, njira kukula anawagawa "chonyowa okosijeni" ndi "wouma mpweya" mitundu iwiri. Thermal Oxide ndi "wakula" wosanjikiza wa oxide, womwe uli ndi mawonekedwe apamwamba, kachulukidwe bwino komanso mphamvu ya dielectric kuposa CVD yoyika oxide zigawo, zomwe zimapangitsa kuti zikhale zapamwamba kwambiri.

Dry Oxygen Oxidation

Silikoni imachita ndi okosijeni ndipo wosanjikiza wa oxide umayenda mosalekeza kupita ku gawo lapansi. Dry oxidation iyenera kuchitidwa pa kutentha kuchokera ku 850 mpaka 1200 ° C, ndi kukula kochepa, ndipo ingagwiritsidwe ntchito pa kukula kwa chipata cha MOS. Dry oxidation imakonda kuposa kuthirira konyowa pakafunika kusanjikiza kwapamwamba kwambiri, kuonda kwambiri kwa silicon oxide. Dry makutidwe ndi okosijeni mphamvu: 15nm ~ 300nm.

2. Kunyowa oxidation

Njirayi imagwiritsa ntchito nthunzi yamadzi kuti ipange oxide wosanjikiza polowa mu chubu cha ng'anjo pansi pa kutentha kwakukulu. Kuchulukana kwa okosijeni wonyowa wa okosijeni ndikoyipa pang'ono kuposa okosijeni wowuma wa okosijeni, koma poyerekeza ndi okosijeni wowuma wa okosijeni ubwino wake ndikuti uli ndi kukula kwakukulu, koyenera kupitilira kukula kwa filimu ya 500nm. Kuchuluka kwa okosijeni wonyowa: 500nm ~ 2µm.

AEMD's atmospheric pressure oxidation ng'anjo chubu ndi chubu cha ng'anjo yaku Czech yopingasa, yomwe imadziwika ndi kukhazikika kwadongosolo, mawonekedwe abwino a filimu komanso kuwongolera tinthu tating'ono. Chubu cha ng'anjo ya silicon oxide chimatha kupanga zowotcha mpaka 50 pa chubu chilichonse, chokhala ndi mawonekedwe abwino kwambiri a intra- ndi inter-wafers.