SICOI (Silicon Carbide pa Insulator) Wafers SiC Film ON Silicon

Kufotokozera Kwachidule:

Ma wafer a Silicon Carbide on Insulator (SICOI) ndi ma substrate a semiconductor a m'badwo wotsatira omwe amaphatikiza mphamvu zapamwamba komanso zamagetsi za silicon carbide (SiC) ndi mawonekedwe apadera amagetsi olekanitsa a insulating buffer layer, monga silicon dioxide (SiO₂) kapena silicon nitride (Si₃N₄). Wafer wamba wa SICOI umakhala ndi epitaxial SiC layer yopyapyala, intermediate insulating film, ndi support base substrate, yomwe ingakhale silicon kapena SiC.


Mawonekedwe

Chithunzi Chatsatanetsatane

SICOI 11_副本
SICOI 14_副本2

Kuyambitsa ma wafer a Silicon Carbide on Insulator (SICOI)

Ma wafer a Silicon Carbide on Insulator (SICOI) ndi ma substrate a semiconductor a m'badwo wotsatira omwe amaphatikiza mphamvu zapamwamba komanso zamagetsi za silicon carbide (SiC) ndi mawonekedwe apadera amagetsi olekanitsa a insulating buffer layer, monga silicon dioxide (SiO₂) kapena silicon nitride (Si₃N₄). Wafer wamba wa SICOI umakhala ndi epitaxial SiC layer yopyapyala, intermediate insulating film, ndi support base substrate, yomwe ingakhale silicon kapena SiC.

Kapangidwe kake kosakanikirana kapangidwa kuti kakwaniritse zofunikira zolimba za zida zamagetsi zamphamvu kwambiri, zama frequency apamwamba, komanso kutentha kwambiri. Mwa kugwiritsa ntchito chotchingira kutentha, ma wafer a SICOI amachepetsa mphamvu ya parasitic ndikuletsa mafunde otuluka, motero kuonetsetsa kuti ma frequency ogwirira ntchito ndi apamwamba, magwiridwe antchito abwino, komanso kayendetsedwe kabwino ka kutentha. Ubwino uwu umawapangitsa kukhala ofunika kwambiri m'magawo monga magalimoto amagetsi, zomangamanga zolumikizirana za 5G, makina oyendetsa ndege, zamagetsi apamwamba a RF, ndi ukadaulo wa masensa a MEMS.

Mfundo Yopangira Ma Wafers a SICOI

Ma wafer a SICOI (Silicon Carbide on Insulator) amapangidwa pogwiritsa ntchito makina apamwambanjira yolumikizirana ndi kuonda kwa wafer:

  1. Kukula kwa SiC Substrate– Wafer wa SiC wapamwamba kwambiri (4H/6H) wakonzedwa ngati chinthu choperekera.

  2. Kuyika kwa Zigawo Zoteteza– Filimu yotetezera kutentha (SiO₂ kapena Si₃N₄) imapangidwa pa chonyamulira chonyamulira (Si kapena SiC).

  3. Kugwirizana kwa Wafer– Wafer wa SiC ndi wafer wonyamulira zimagwirizanitsidwa pamodzi pansi pa kutentha kwakukulu kapena thandizo la plasma.

  4. Kuchepetsa ndi Kupukuta– SiC donor wafer imachepetsedwa kufika pa ma micrometer angapo ndikupukutidwa kuti ipange malo osalala a atomiki.

  5. Kuyendera Komaliza- Wafer wa SICOI womalizidwa umayesedwa kuti ukhale wofanana ndi makulidwe, kukhwima kwa pamwamba, komanso momwe zimagwirira ntchito poteteza kutentha.

Kudzera mu ndondomekoyi,wosanjikiza woonda wa SiCyokhala ndi mphamvu zamagetsi ndi kutentha kwabwino imaphatikizidwa ndi filimu yotetezera kutentha ndi gawo lothandizira, zomwe zimapangitsa kuti pakhale nsanja yogwira ntchito bwino kwambiri yamagetsi ndi zida za RF za m'badwo wotsatira.

SiCOI

Ubwino Waukulu wa Ma Wafers a SICOI

Gulu la Zinthu Makhalidwe Aukadaulo Ubwino Waukulu
Kapangidwe ka Zinthu Filimu yogwira ntchito ya 4H/6H-SiC + yoteteza kutentha (SiO₂/Si₃N₄) + Si kapena chonyamulira cha SiC Zimathandiza kuti magetsi azizimitsidwa mwamphamvu, zimachepetsa kusokoneza kwa tizilombo toyambitsa matenda
Katundu Wamagetsi Mphamvu yotsika kwambiri (>3 MV/cm), kutayika kochepa kwa dielectric Yokonzedwa kuti igwire ntchito ndi magetsi ambiri komanso pafupipafupi kwambiri
Katundu wa Kutentha Kutentha kwa mpweya mpaka 4.9 W/cm·K, kokhazikika pamwamba pa 500°C Kutaya kutentha kogwira mtima, magwiridwe antchito abwino kwambiri pansi pa kutentha kwakukulu
Katundu wa Makina Kuuma kwambiri (Mohs 9.5), kuchuluka kochepa kwa kutentha Yolimba motsutsana ndi kupsinjika maganizo, imawonjezera moyo wautali wa chipangizocho
Ubwino Wapamwamba Malo osalala kwambiri (Ra <0.2 nm) Amalimbikitsa epitaxy yopanda chilema komanso kupanga zipangizo zodalirika
Kuteteza kutentha Kukana >10¹⁴ Ω·cm, mphamvu yotsika yotayikira Ntchito yodalirika mu RF ndi mapulogalamu odzipatula okwera mphamvu
Kukula & Kusintha Imapezeka mumitundu ya mainchesi 4, 6, ndi 8; makulidwe a SiC 1–100 μm; chotenthetsera 0.1–10 μm Kapangidwe kosinthasintha ka zofunikira zosiyanasiyana zogwiritsira ntchito

 

下载

Madera Ofunikira Kwambiri

Gawo Logwiritsira Ntchito Milandu Yogwiritsidwa Ntchito Kawirikawiri Ubwino wa Kuchita Bwino
Zamagetsi Zamagetsi Ma inverter a EV, malo ochapira, zida zamagetsi zamafakitale Voliyumu yotsika kwambiri, kutayika kochepa kwa kusinthana
RF ndi 5G Zokulitsa mphamvu za siteshoni yapansi, zigawo za mafunde a millimeter Ma parasites otsika, amathandizira ntchito za GHz-range
Masensa a MEMS Masensa okakamiza zachilengedwe, MEMS yoyendera Kukhazikika kwa kutentha kwambiri, kukana kuwala kwa dzuwa
Ndege ndi Chitetezo Kulankhulana kwa satellite, ma module amphamvu a avionics Kudalirika pa kutentha kwambiri komanso pakuwonekera kwa kuwala kwa dzuwa
Gridi Yanzeru Zosinthira za HVDC, zophwanya ma circuit breakers a solid-state Kuteteza kutentha kwambiri kumachepetsa kutayika kwa mphamvu
Zipangizo zamagetsi Ma LED a UV, ma laser substrates Ubwino wapamwamba wa kristalo umathandizira kutulutsa bwino kuwala

Kupanga kwa 4H-SiCOI

Kupanga ma wafer a 4H-SiCOI kumachitika kudzera munjira zolumikizirana ndi zochepetsera ma wafer, zomwe zimathandiza kuti ma insulation interfaces apamwamba kwambiri komanso zigawo zogwira ntchito za SiC zopanda chilema.

  • a: Ndondomeko ya kapangidwe ka nsanja ya 4H-SiCOI.

  • bChithunzi cha wafer wa mainchesi 4 wa 4H-SiCOI pogwiritsa ntchito bonding ndi treeling; malo olakwika olembedwa.

  • c: Kufananira kwa makulidwe a gawo la 4H-SiCOI.

  • dChithunzi chowoneka bwino cha die ya 4H-SiCOI.

  • e: Kuyenda kwa njira yopangira SiC microdisk resonator.

  • f: SEM ya microdisk resonator yomalizidwa.

  • gSEM yokulirapo ikuwonetsa khoma la mbali ya resonator; chithunzi cha AFM chikuwonetsa kusalala kwa pamwamba pa nanoscale.

  • h: SEM yopingasa yomwe ikuwonetsa pamwamba pa chinthu chonga parabolic.

Mafunso Ofunsidwa Kawirikawiri pa Ma Wafers a SICOI

Q1: Kodi ma wafer a SICOI ali ndi ubwino wotani poyerekeza ndi ma wafer achikhalidwe a SiC?
A1: Mosiyana ndi ma substrates a SiC wamba, ma wafer a SICOI ali ndi gawo loteteza kutentha lomwe limachepetsa mphamvu ya parasitic ndi mafunde otuluka, zomwe zimapangitsa kuti pakhale magwiridwe antchito apamwamba, kuyankha bwino pafupipafupi, komanso magwiridwe antchito apamwamba a kutentha.

Q2: Ndi kukula kotani kwa wafer komwe kumapezeka nthawi zambiri?
A2: Ma wafer a SICOI nthawi zambiri amapangidwa m'mitundu ya mainchesi 4, mainchesi 6, ndi mainchesi 8, okhala ndi makulidwe a SiC komanso kutchinjiriza komwe kumapezeka kutengera zomwe chipangizocho chikufuna.

Q3: Ndi mafakitale ati omwe amapindula kwambiri ndi ma wafer a SICOI?
A3: Makampani ofunikira akuphatikizapo magetsi amagetsi amagetsi, magetsi a RF a ma network a 5G, MEMS a masensa amlengalenga, ndi ma optoelectronics monga ma LED a UV.

Q4: Kodi chotetezera kutentha chimathandiza bwanji kuti chipangizocho chigwire bwino ntchito?
A4: Filimu yotetezera kutentha (SiO₂ kapena Si₃N₄) imaletsa kutuluka kwa magetsi ndipo imachepetsa kulankhulana kwa magetsi, zomwe zimathandiza kuti magetsi azikhala olimba, kusinthana bwino, komanso kuchepetsa kutaya kutentha.

Q5: Kodi ma wafer a SICOI ndi oyenera kugwiritsidwa ntchito kutentha kwambiri?
A5: Inde, ndi kutentha kwambiri komanso kukana kutentha kopitirira 500°C, ma wafer a SICOI adapangidwa kuti azigwira ntchito bwino kutentha kwambiri komanso m'malo ovuta.

Q6: Kodi ma wafer a SICOI angasinthidwe?
A6: Inde. Opanga amapereka mapangidwe okonzedwa kuti agwirizane ndi makulidwe enaake, kuchuluka kwa mankhwala opangidwa ndi doping, ndi kuphatikiza kwa substrate kuti akwaniritse zosowa zosiyanasiyana za kafukufuku ndi mafakitale.


  • Yapitayi:
  • Ena:

  • Lembani uthenga wanu apa ndipo mutitumizireni