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SICOI (Silicon Carbide pa Insulator) Mafilimu a SiC a SiC PA Silicon

SICOI (Silicon Carbide pa Insulator) Makanema a SiC pa Silicon Chithunzi Chowonetsedwa
  • SICOI (Silicon Carbide pa Insulator) Mafilimu a SiC a SiC PA Silicon
  • SICOI (Silicon Carbide pa Insulator) Mafilimu a SiC a SiC PA Silicon
  • SICOI (Silicon Carbide pa Insulator) Mafilimu a SiC a SiC PA Silicon

Kufotokozera Kwachidule:

Zophika za Silicon Carbide pa Insulator (SICOI) ndi magawo am'badwo wotsatira a semiconductor omwe amaphatikiza zinthu zapamwamba kwambiri komanso zamagetsi za silicon carbide (SiC) ndi mawonekedwe odzipatula amagetsi amtundu wotsekera, monga silicon dioxide (SiO₂) kapena silicon nitride (Si₃N₄). Chowotcha chamtundu wa SICOI chimakhala ndi wosanjikiza wopyapyala wa epitaxial SiC, filimu yotchingira yapakatikati, ndi gawo lapansi lothandizira, lomwe lingakhale silikoni kapena SiC.


Mawonekedwe

Chithunzi chatsatanetsatane

SICOI 11_副本
SICOI 14_副本2

Kuyambitsa Silicon Carbide pa Insulator (SICOI) wafers

Zophika za Silicon Carbide pa Insulator (SICOI) ndi magawo am'badwo wotsatira a semiconductor omwe amaphatikiza zinthu zapamwamba kwambiri komanso zamagetsi za silicon carbide (SiC) ndi mawonekedwe odzipatula amagetsi amtundu wotsekera, monga silicon dioxide (SiO₂) kapena silicon nitride (Si₃N₄). Chowotcha chamtundu wa SICOI chimakhala ndi wosanjikiza wopyapyala wa epitaxial SiC, filimu yotchingira yapakatikati, ndi gawo lapansi lothandizira, lomwe lingakhale silikoni kapena SiC.

Kapangidwe ka haibridi kameneka kamapangidwa kuti kakwaniritse zofuna zamphamvu zamphamvu kwambiri, zothamanga kwambiri komanso zotentha kwambiri. Mwa kuphatikiza zosanjikiza zotchingira, zowola za SICOI zimachepetsa mphamvu ya parasitic ndikuletsa mafunde otuluka, potero zimawonetsetsa kuti ma frequency ogwiritsira ntchito amakwera, kuchita bwino, komanso kuwongolera kwamafuta. Zopindulitsa izi zimawapangitsa kukhala ofunika kwambiri m'magawo monga magalimoto amagetsi, 5G telecommunication infrastructure, airspace systems, advanced RF electronics, ndi MEMS sensor technologies.

Mfundo Yopanga ya SICOI Wafers

Zophika za SICOI (Silicon Carbide pa Insulator) zimapangidwa kudzera mwaukadaulo wapamwambanjira yophatikizira yophika ndi kupatulira:

  1. Kukula kwa SiC Substrate- Chophika chapamwamba cha single-crystal SiC (4H / 6H) chimakonzedwa ngati zinthu zoperekera.

  2. Insulating Layer Deposition- Kanema woteteza (SiO₂ kapena Si₃N₄) amapangidwa pa chotengera chonyamulira (Si kapena SiC).

  3. Kugwirizana kwa Wafer- Chophika cha SiC ndi chonyamulira chonyamulira chimalumikizidwa palimodzi pansi pa kutentha kwakukulu kapena thandizo la plasma.

  4. Kupatulira & kupukuta- SiC donor wafer imachepetsedwa mpaka ma micrometer angapo ndikupukutidwa kuti ikhale yosalala bwino.

  5. Kuyendera komaliza- Chophika cha SICOI chomalizidwa chimayesedwa kuti chifanane ndi makulidwe, kuuma kwa pamwamba, komanso magwiridwe antchito.

Kudzera munjira imeneyi, awoonda yogwira SiC wosanjikizazokhala ndi mphamvu zabwino kwambiri zamagetsi ndi zotentha zimaphatikizidwa ndi filimu yotsekereza ndi gawo lapansi lothandizira, kupanga nsanja yapamwamba yamagetsi am'badwo wotsatira ndi zida za RF.

SiCOI

Ubwino waukulu wa SICOI Wafers

Gulu lazinthu Makhalidwe Aukadaulo Ubwino Wachikulu
Kapangidwe kazinthu 4H/6H-SiC yogwira wosanjikiza + filimu yoteteza (SiO₂/Si₃N₄) + Si kapena SiC chonyamulira Amakwaniritsa kudzipatula kwamphamvu kwamagetsi, kumachepetsa kusokoneza kwa parasitic
Zida Zamagetsi Kuwonongeka kwakukulu (> 3 MV / cm), kuchepa kwa dielectric Wokometsedwa kuti azigwira ntchito mwamphamvu kwambiri komanso ma frequency apamwamba
Thermal Properties Kutentha kwapakati mpaka 4.9 W/cm·K, kukhazikika pamwamba pa 500°C Kutentha kogwira mtima, ntchito yabwino kwambiri pansi pa katundu wotentha kwambiri
Mechanical Properties Kulimba kwambiri (Mohs 9.5), kutsika kokwanira kwa kukula kwamafuta Kulimbana ndi nkhawa, kumawonjezera moyo wautali wa chipangizocho
Ubwino Wapamwamba Malo osalala kwambiri (Ra <0.2 nm) Imalimbikitsa epitaxy yopanda chilema komanso kupanga zida zodalirika
Insulation Kusasunthika >10¹⁴ Ω·cm, kutayikira kochepa Kugwira ntchito modalirika mu RF ndi ma high-voltage kudzipatula ntchito
Kukula & Kusintha Mwamakonda Anu Imapezeka mumitundu 4, 6, ndi 8-inch; SiC makulidwe 1-100 μm; kusungunula 0.1-10 μm Mapangidwe osinthika pazofunikira zosiyanasiyana zofunsira

 

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Core Application Area

Gawo la Ntchito Milandu Yodziwika Yogwiritsa Ntchito Ubwino Wantchito
Zamagetsi Zamagetsi Ma inverters a EV, malo olipira, zida zamagetsi zamafakitale Kuwonongeka kwakukulu kwamagetsi, kuchepetsa kutayika kwa kusintha
RF ndi 5G Ma amplifiers a base station, ma millimeter-wave components Ma parasitics otsika, amathandizira magwiridwe antchito a GHz
Masensa a MEMS Masensa owopsa a chilengedwe, ma MEMS oyenda panyanja Mkulu matenthedwe bata, kugonjetsedwa ndi ma radiation
Zamlengalenga & Chitetezo Kulankhulana kwa satellite, ma module amphamvu a avionics Kudalirika pakutentha kwambiri komanso kukhudzana ndi ma radiation
Smart Grid Ma converter a HVDC, oyendetsa madera olimba Kutentha kwakukulu kumachepetsa kutayika kwa mphamvu
Zithunzi za Optoelectronics Ma LED a UV, magawo a laser Mawonekedwe apamwamba a crystalline amathandizira kutulutsa kowala bwino

Kupanga kwa 4H-SiCOI

Kupanga kwa 4H-SiCOI wafers kumatheka kudzeranjira zophatikizira zophika ndi kupatulira, kupangitsa kuti pakhale zolumikizira zapamwamba kwambiri komanso zigawo zogwira ntchito za SiC zopanda chilema.

  • a: Schematic of the 4H-SiCOI material platform fabrication.

  • b: Chithunzi cha 4-inch 4H-SiCOI chowotcha pogwiritsa ntchito kugwirizana ndi kupatulira; Zone zolakwika zolembedwa.

  • c: Makulidwe ofanana mawonekedwe a gawo lapansi la 4H-SiCOI.

  • d: Chithunzi chowoneka cha 4H-SiCOI kufa.

  • e: Njira yoyendera popanga SiC microdisk resonator.

  • f: SEM ya microdisk resonator yomalizidwa.

  • g: Kukulitsidwa kwa SEM kuwonetsa mbali ya resonator; Chigawo cha AFM chikuwonetsa kusalala kwa nanoscale.

  • h: SEM yodutsa magawo ojambulira kumtunda kowoneka ngati parabolic.

FAQ pa SICOI Wafers

Q1: Kodi zowotcha za SICOI zili ndi zabwino ziti kuposa zowotcha zachikhalidwe za SiC?
A1: Mosiyana ndi magawo amtundu wa SiC, zowotcha za SICOI zimaphatikizapo zosanjikiza zotchingira zomwe zimachepetsa mphamvu ya parasitic ndi mafunde otayikira, zomwe zimapangitsa kuti pakhale mphamvu zambiri, kuyankha kwafupipafupi, komanso magwiridwe antchito apamwamba kwambiri.

Q2: Ndimiyeso yanji yophika yomwe imapezeka nthawi zambiri?
A2: zowotcha SICOI zambiri amapangidwa 4 inchi, 6-inchi, ndi 8-inchi akamagwiritsa, ndi makonda SiC ndi insulating makulidwe wosanjikiza zilipo malinga ndi zofunika chipangizo.

Q3: Ndi mafakitale ati omwe amapindula kwambiri ndi zowotcha za SICOI?
A3: Mafakitale ofunikira amaphatikizapo zamagetsi zamagetsi zamagalimoto amagetsi, RF electronics for 5G networks, MEMS for aerospace sensors, ndi optoelectronics monga UV LEDs.

Q4: Kodi wosanjikiza insulating bwino chipangizo ntchito?
A4: Kanema woteteza (SiO₂ kapena Si₃N₄) amalepheretsa kutayikira kwaposachedwa ndikuchepetsa kuyankhulana kwamagetsi, kumathandizira kupirira kwamagetsi apamwamba, kusintha koyenera, komanso kuchepa kwa kutentha.

Q5: Kodi zowotcha za SICOI ndizoyenera kugwiritsa ntchito kutentha kwambiri?
A5: Inde, ndi matenthedwe apamwamba kwambiri komanso kukana kupitirira 500 ° C, zowotcha za SICOI zimapangidwa kuti zizigwira ntchito modalirika pansi pa kutentha kwakukulu komanso m'malo ovuta.

Q6: Kodi zowonda za SICOI zitha kusinthidwa makonda?
A6: Ndithu. Opanga amapereka mapangidwe ogwirizana a makulidwe enieni, milingo ya doping, ndi kuphatikiza kwa gawo lapansi kuti akwaniritse kafukufuku wosiyanasiyana komanso zosowa zamafakitale.

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