Ng'anjo Yokulira ya SiC Ingot ya Njira Zazikulu za SiC Crystal TSSG/LPE

Ng'anjo Yokulirapo ya SiC Ingot ya SiC Crystal TSSG/LPE Njira Zowonetsera Zithunzi Zokhala ndi Diameta Kwakukulu

Kufotokozera Kwachidule:

XKH's liquid-phase silicon carbide ingot kukula ng'anjo imagwiritsa ntchito matekinoloje apamwamba kwambiri padziko lonse lapansi a TSSG (Top-Seeded Solution Growth) ndi LPE (Liquid Phase Epitaxy), omwe amapangidwira kukula kwa kristalo wapamwamba kwambiri wa SiC. Njira ya TSSG imathandizira kukula kwa 4-8 inchi lalikulu-diameter 4H / 6H-SiC ingots kudzera m'miyendo yolondola ya kutentha ndi kukweza mbewu kuwongolera liwiro, pomwe njira ya LPE imathandizira kukula kolamuliridwa kwa zigawo za SiC epitaxial pa kutentha kocheperako, makamaka koyenera kopitilira muyeso-otsika chilema wandiweyani zigawo za epitaxial. Dongosolo la kukula kwa silicon carbide ingot lamadzimadzi lakhala likugwiritsidwa ntchito bwino popanga makhiristo osiyanasiyana a SiC kuphatikiza mtundu wa 4H/6H-N ndi mtundu wa 4H/6H-SEMI, wopereka mayankho athunthu kuchokera ku zida kupita kunjira.

Titumizireni imelo

Mawonekedwe

Mfundo Yogwirira Ntchito

Mfundo yaikulu ya kukula kwa ingot ya silicon carbide ingot imaphatikizapo kusungunula zipangizo zoyera za SiC muzitsulo zosungunula (mwachitsanzo, Si, Cr) pa 1800-2100 ° C kuti apange njira zodzaza, zotsatiridwa ndi kukula kolamuliridwa kwa makristasi a SiC pa makhiristo a mbewu kupyolera mu kutentha kwapamwamba kwambiri komanso kusinthasintha kwa kutentha. Ukadaulowu ndiwoyenera kwambiri popanga chiyero chapamwamba (> 99.9995%) 4H/6H-SiC makhiristo amodzi okhala ndi kachulukidwe kakang'ono (<100/cm²), kukwaniritsa zofunikira zolimba za gawo lapansi pamagetsi amagetsi ndi zida za RF. Dongosolo la kukula kwamadzimadzi limathandizira kuwongolera bwino kwa mtundu wa crystal conductivity (mtundu wa N / P) ndi resistivity kudzera pakupanga yankho lokhazikika komanso magawo akukula.

Core Components

1. Special Crucible System: High-purity graphite / tantalum composite crucible, kutentha kwa kutentha> 2200 ° C, kugonjetsedwa ndi SiC kusungunula dzimbiri.

2. Njira Yowotchera Magawo Osiyanasiyana: Kuphatikizika kokanira / kutenthetsa koyambitsa kutentha ndi kulondola kwa kutentha kwa ± 0.5 ° C (1800-2100 ° C osiyanasiyana).

3. Dongosolo Loyenda Lolondola: Kuwongolera kwapawiri kotseka kwa kasinthasintha wa mbeu (0-50rpm) ndi kukweza (0.1-10mm/h).

4. Atmosphere Control System: Kutetezedwa kwapamwamba kwa argon / nitrogen, kusinthasintha kwa ntchito (0.1-1atm).

5. Intelligent Control System: PLC + mafakitale PC redundant control ndi nthawi yeniyeni yowunikira mawonekedwe a kukula.

6. Njira Yoziziritsira Yogwira Ntchito: Mapangidwe oziziritsa amadzi amatsitsidwa amaonetsetsa kuti ntchitoyo ikhale yokhazikika kwa nthawi yayitali.

TSSG vs. LPE Kufananiza

Makhalidwe	Njira ya TSSG	Njira ya LPE
Kukula Temp	2000-2100 ° C	1500-1800 ° C
Mlingo wa Kukula	0.2-1mm/h	5-50μm/h
Kukula kwa Crystal	4-8 masentimita	50-500μm epi-zigawo
Main Application	Kukonzekera kwa gawo lapansi	Mphamvu za epi-zigawo
Chilema Density	<500/cm²	<100/cm²
Oyenerera Polytypes	4H/6H-SiC	4H/3C-SiC

Mapulogalamu Ofunika Kwambiri

1. Zamagetsi Zamagetsi: Magawo a 6-inch 4H-SiC a 1200V+ MOSFETs/diode.

2. 5G RF Devices: Semi-insulating SiC substrates for base base PAs.

3. Mapulogalamu a EV: Zowonjezera kwambiri (> 200μm) ma epi-zigawo zama module amagiredi amagalimoto.

4. Ma Inverters a PV: Magawo ocheperako omwe amathandizira> 99% kutembenuka bwino.

Ubwino Wachikulu

1. Kupambana Kwaukadaulo
1.1 Mapangidwe Ophatikizidwa a Multi-Method
Dongosolo lakukula kwa SiC ingot lamadzimadzi limaphatikiza ukadaulo wa TSSG ndi LPE crystal kukula. Dongosolo la TSSG limagwiritsa ntchito kukula kwa njira zokulirapo zokhala ndi kusungunuka kolondola komanso kuwongolera kutentha (ΔT≤5℃/cm), kupangitsa kukula kokhazikika kwa ma 4-8 inchi a SiC ingots okhala ndi zokolola za 15-20kg pa 6H / 4H-SiC makhiristo. Dongosolo la LPE limagwiritsa ntchito makina osungunulira okhathamiritsa (Si-Cr alloy system) ndi supersaturation control (± 1%) kuti ikule zigawo zapamwamba kwambiri za epitaxial zokhala ndi chilema <100/cm² pakutentha kotsika (1500-1800 ℃).

1.2 Intelligent Control System
Zokhala ndi 4th-generation smart growth control yokhala ndi:
• Multispectral in-situ monitoring (400-2500nm wavelength range)
• Kuzindikira mulingo wosungunuka wa laser (± 0.01mm mwatsatanetsatane)
• Kuwongolera kozungulira kwa CCD (<± 1mm kusinthasintha)
• Kukhathamiritsa kwa kukula koyendetsedwa ndi AI (15% kupulumutsa mphamvu)

2. Njira Magwiridwe Ubwino
2.1 TSSG Njira Yopambana Mphamvu
• Kuthekera kwakukulu: Kumathandizira mpaka kukula kwa kristalo wa 8-inch ndi> 99.5% m'mimba mwake mofanana
• Kuwala kopambana: Kachulukidwe kamene kamasokonekera <500/cm², kachulukidwe ka ma micropipe <5/cm²
• Doping uniformity: <8% n-type resistivity kusiyana (4-inch wafers)
• Kukula kokwezeka: Zosinthika 0.3-1.2mm/h, 3-5× mwachangu kuposa njira zagawo la nthunzi

2.2 Njira ya LPE Mphamvu Zazikulu
• Epitaxy yotsika kwambiri: Kuchulukana kwa mawonekedwe <1×10¹¹cm⁻²·eV⁻¹
• Kuwongolera kokwanira bwino: 50-500μm epi-zigawo zokhala ndi <± 2% makulidwe osiyanasiyana
• Kutentha kwapang'onopang'ono: 300-500 ℃ kutsika kuposa njira za CVD
• Kukula kwamapangidwe ovuta: Imathandizira ma pn junctions, superlattices, etc.

3. Kupanga Mwachangu Ubwino
3.1 Kuwongolera Mtengo
• 85% kagwiritsidwe ntchito ka zinthu zopangira (vs. 60% wamba)
• 40% yocheperako yogwiritsa ntchito mphamvu (poyerekeza ndi HVPE)
• 90% nthawi yokweza zida (mapangidwe amodular amachepetsa nthawi yopumira)

3.2 Chitsimikizo cha Ubwino
• 6σ kuwongolera ndondomeko (CPK>1.67)
• Kuzindikira zolakwika pa intaneti (0.1μm kusamvana)
• Kutsatiridwa kwathunthu kwa data (2000+ magawo enieni)

3.3 Scalability
• Yogwirizana ndi 4H/6H/3C polytypes
• Zosinthika kukhala ma module a 12-inch process
• Imathandizira SiC/GaN hetero-integration

4. Ubwino Wogwiritsa Ntchito Makampani
4.1 Zida Zamagetsi
• Magawo otsika (0.015-0.025Ω·cm) a zida za 1200-3300V
• Semi-insulating substrates (>10⁸Ω·cm) ya mapulogalamu a RF

4.2 Emerging Technologies
• Kulankhulana kwachulukidwe: Magawo a phokoso otsika kwambiri (phokoso la 1/f<-120dB)
• Madera ang'onoang'ono: Makristalo osamva kutentha kwa ma radiation (<5% kuwonongeka pambuyo pa kuyatsa kwa 1×10¹⁶n/cm²)

XKH Services

1. Zida Zosinthidwa: Zogwirizana ndi machitidwe a TSSG / LPE.
2. Maphunziro a Njira: Mapulogalamu ophunzitsidwa bwino aukadaulo.
3. Pambuyo-kugulitsa Thandizo: 24/7 luso yankho ndi kukonza.
4. Turnkey Solutions: Utumiki wathunthu kuchokera pakuyika mpaka kutsimikizira.
5. Zinthu Zopangira: 2-12 inch SiC substrates / epi-wafers zilipo.

Ubwino waukulu ndi:
• Kukula mpaka 8-inch crystal kukula.
• Kusagwirizana kofanana <0.5%.
• Zida zowonjezera nthawi> 95%.
• 24/7 thandizo laukadaulo.