Ng'anjo Yokulira ya SiC Ingot ya Njira Zazikulu za SiC Crystal TSSG/LPE

Kufotokozera Kwachidule:

Uvuni wa XKH wa liquid-phase silicon carbide ingot growth furnace umagwiritsa ntchito ukadaulo wotsogola padziko lonse wa TSSG (Top-Seeded Solution Growth) ndi LPE (Liquid Phase Epitaxy), womwe umapangidwira kukula kwa SiC single crystal yapamwamba kwambiri. Njira ya TSSG imalola kukula kwa ma ingot akuluakulu a 4H/6H-SiC a mainchesi 4-8 kudzera mu kutentha kolondola komanso kuwongolera liwiro la kukweza mbewu, pomwe njira ya LPE imathandizira kukula kolamulidwa kwa zigawo za SiC epitaxial pa kutentha kotsika, makamaka koyenera zigawo za epitaxial zokhuthala kwambiri. Dongosolo la kukula kwa ingot la liquid-phase silicon carbide ingot lagwiritsidwa ntchito bwino popanga makristalo osiyanasiyana a SiC kuphatikiza mtundu wa 4H/6H-N ndi mtundu wa 4H/6H-SEMI insulating, kupereka mayankho athunthu kuyambira zida mpaka njira.

Tumizani imelo kwa ife

Mawonekedwe

Mfundo Yogwirira Ntchito

Mfundo yaikulu ya kukula kwa ingot ya silicon carbide yamadzimadzi imaphatikizapo kusungunula zipangizo zopangira SiC zoyera kwambiri mu zitsulo zosungunuka (monga Si, Cr) pa 1800-2100°C kuti apange mayankho odzaza, kutsatiridwa ndi kukula kolamulidwa kwa makristalo amodzi a SiC pa makristalo a mbewu kudzera mu kusintha kwa kutentha ndi malamulo okhwima. Ukadaulo uwu ndi woyenera kwambiri popanga makristaro amodzi a 4H/6H-SiC okhala ndi chilema chochepa (<100/cm²), kukwaniritsa zofunikira zolimba za substrate zamagetsi zamagetsi ndi zida za RF. Dongosolo la kukula kwa gawo lamadzimadzi limalola kuwongolera molondola mtundu wa kristalo wowongolera (mtundu wa N/P) ndi resistivity kudzera mu kapangidwe kabwino ka yankho ndi magawo okulira.

Zigawo Zapakati

1. Dongosolo Lapadera Lopangira Zinthu Zofunika: Graphite/tantalum composite crucible yoyera kwambiri, yokana kutentha >2200°C, yolimbana ndi dzimbiri losungunuka la SiC.

2. Dongosolo Lotenthetsera la Magawo Ambiri: Kutenthetsa kophatikizana kolimbana/kuyambitsa ndi kulondola kwa kutentha kwa ±0.5°C (1800-2100°C).

3. Dongosolo Loyenda Molondola: Kulamulira kozungulira kawiri kozungulira mbewu (0-50rpm) ndi kukweza (0.1-10mm/h).

4. Dongosolo Lowongolera Mpweya: Chitetezo cha argon/nayitrogeni choyera kwambiri, kuthamanga kogwira ntchito kosinthika (0.1-1atm).

5. Dongosolo Lowongolera Mwanzeru: PLC + PC yamakampani yowongolera yowonjezereka yokhala ndi mawonekedwe owunikira kukula kwa mawonekedwe nthawi yeniyeni.

6. Njira Yoziziritsira Yogwira Mtima: Kapangidwe koziziritsira madzi kokonzedwa bwino kamatsimikizira kuti ntchito yake ndi yokhazikika kwa nthawi yayitali.

Kuyerekeza kwa TSSG ndi LPE

Makhalidwe	Njira ya TSSG	Njira ya LPE
Kutentha kwa Kukula	2000-2100°C	1500-1800°C
Chiŵerengero cha Kukula	0.2-1mm/h	5-50μm/h
Kukula kwa Crystal	Zidutswa za mainchesi 4-8	50-500μm epi-layers
Kugwiritsa Ntchito Kwambiri	Kukonzekera kwa substrate	Zipangizo zamagetsi za epi-layers
Kuchulukana kwa chilema	<500/cm²	<100/cm²
Mitundu Yoyenera ya Polytypes	4H/6H-SiC	4H/3C-SiC

Mapulogalamu Ofunika

1. Zamagetsi Zamagetsi: Ma substrates a mainchesi 6 a 4H-SiC a 1200V+ MOSFET/diode.

2. Zipangizo za 5G RF: Ma substrates a SiC oteteza pang'ono a ma PA a siteshoni yoyambira.

3. Kugwiritsa Ntchito Ma EV: Ma epi-layer okhuthala kwambiri (>200μm) a ma module agalimoto.

4. Ma PV Inverters: Ma substrates opanda vuto lililonse omwe amalola kuti ntchito yosinthira ikhale yogwira ntchito >99%.

Ubwino Waukulu

1. Kupambana kwa Ukadaulo
1.1 Kapangidwe ka Njira Zambiri Zogwirizana
Dongosolo la kukula kwa ingot la SiC lokhala ndi gawo lamadzimadzi limaphatikiza ukadaulo wakukula kwa makristalo a TSSG ndi LPE. Dongosolo la TSSG limagwiritsa ntchito kukula kwa yankho lokhala ndi mbewu zapamwamba ndi kusungunuka kolondola komanso kuwongolera kutentha (ΔT≤5℃/cm), zomwe zimathandiza kukula kokhazikika kwa ma ingot a SiC a mainchesi 4-8 okhala ndi mainchesi akuluakulu okhala ndi zokolola zokwana 15-20kg pa makristalo a 6H/4H-SiC. Dongosolo la LPE limagwiritsa ntchito kapangidwe kabwino ka solvent (dongosolo la alloy la Si-Cr) ndi kuwongolera kwa supersaturation (±1%) kuti likulitse zigawo za epitaxial zokhuthala zapamwamba kwambiri zokhala ndi defect defect density <100/cm² pa kutentha kochepa (1500-1800℃).

1.2 Dongosolo Lolamulira Lanzeru
Yokhala ndi njira yowongolera kukula kwanzeru ya m'badwo wachinayi yokhala ndi:
• Kuwunika kwa ma spectral ambiri mkati mwa malo (ma wavelength range 400-2500nm)
• Kuzindikira mulingo wosungunuka pogwiritsa ntchito laser (± 0.01mm molondola)
• Kulamulira kwa CCD-based diameter closed-loop control (<±1mm fluctuation)
• Kukonza bwino magawo a kukula pogwiritsa ntchito AI (kusunga mphamvu 15%)

2. Ubwino wa Machitidwe a Njira
2.1 Njira ya TSSG Mphamvu Zapakati
• Mphamvu yayikulu: Imathandizira kukula kwa kristalo mpaka mainchesi 8 ndi mulifupi wofanana ndi mainchesi oposa 99.5%.
• Kuchuluka kwa kristalo: Kuchuluka kwa dislocation <500/cm², kuchuluka kwa micropipe <5/cm²
• Kufanana kwa mankhwala oletsa kutupa: <8% n-type resistivity variation (ma wafer a mainchesi 4)
• Kuchuluka kwa kukula kwabwino: Kusinthika 0.3-1.2mm/h, 3-5× mofulumira kuposa njira zosinthira mpweya

2.2 Njira ya LPE Mphamvu Zapakati
• Chilema chotsika kwambiri cha epitaxy: Kuchuluka kwa mawonekedwe a mawonekedwe <1×10¹¹cm⁻²·eV⁻¹
• Kuwongolera makulidwe molondola: 50-500μm epi-layers yokhala ndi kusiyana kwa makulidwe <±2%
• Kutentha kotsika: 300-500℃ yotsika kuposa njira za CVD
• Kukula kwa kapangidwe kovuta: Kumathandizira ma pn junctions, superlattices, ndi zina zotero.

3. Ubwino Wogwiritsa Ntchito Bwino Pakupanga
3.1 Kuwongolera Mtengo
• Kugwiritsa ntchito zinthu zopangira ndi 85% (mosiyana ndi 60% yachizolowezi)
• Kugwiritsa ntchito mphamvu kotsika ndi 40% (poyerekeza ndi HVPE)
• 90% ya nthawi yogwira ntchito ya zida (kapangidwe ka modular kamachepetsa nthawi yogwira ntchito)

3.2 Chitsimikizo Cha Ubwino
• Kuwongolera njira ya 6σ (CPK>1.67)
• Kuzindikira zolakwika pa intaneti (kuchuluka kwa 0.1μm)
• Kutsata deta yonse (magawo 2000+ a nthawi yeniyeni)

3.3 Kuchuluka kwa kukula
• Imagwirizana ndi mitundu ya 4H/6H/3C
• Ikhoza kusinthidwa kukhala ma module a process a mainchesi 12
• Imathandizira kuphatikizana kwa SiC/GaN hetero

4. Ubwino Wogwiritsa Ntchito Makampani
4.1 Zipangizo Zamagetsi
• Ma substrates osalimba kwambiri (0.015-0.025Ω·cm) a zipangizo za 1200-3300V
• Ma substrates oteteza pang'ono (>10⁸Ω·cm) a ntchito za RF

4.2 Ukadaulo Watsopano
• Kulankhulana kwa Quantum: Ma substrates a phokoso lotsika kwambiri (phokoso la 1/f<-120dB)
• Malo ovuta kwambiri: Makristalo osakhudzidwa ndi kuwala kwa dzuwa (<5% kuwonongeka pambuyo pa kuwala kwa 1×10¹⁶n/cm²)

Ntchito za XKH

1. Zipangizo Zopangidwira Makonda: Makonzedwe a makina a TSSG/LPE Oyenera.
2. Maphunziro a Njira: Mapulogalamu ophunzitsira zaukadaulo okwanira.
3. Thandizo Pambuyo pa malonda: Kuyankha ndi kukonza ukadaulo maola 24 pa tsiku, masiku 7 pa sabata.
4. Mayankho Otembenukira: Utumiki wathunthu kuyambira kukhazikitsa mpaka kutsimikizira njira.
5. Zinthu Zofunika: Ma substrates a SiC a mainchesi 2-12/epi-wafers alipo.

Ubwino waukulu ndi monga:
• Mphamvu yokulira ya kristalo mpaka mainchesi 8.
• Kufanana kwa kukana <0.5%.
• Nthawi yogwira ntchito ya zida >95%.
• Thandizo laukadaulo la maola 24 pa sabata.