SiC Ingot 4H mtundu Dia 4inch 6inch Makulidwe 5-10mm Kafukufuku / Dummy Kalasi

Kufotokozera Kwachidule:

Silicon Carbide (SiC) yatuluka ngati chinthu chofunikira kwambiri pamapulogalamu apamwamba amagetsi ndi optoelectronic chifukwa champhamvu zake zamagetsi, zotentha, komanso zamakina. Ingot ya 4H-SiC, yomwe imapezeka m'mimba mwake ya 4-inchi ndi 6-inchi ndi makulidwe a 5-10 mm, ndi maziko opangira kafukufuku ndi chitukuko kapena ngati dummy-grade material. Ingot iyi idapangidwa kuti ipatse ofufuza ndi opanga magawo apamwamba kwambiri a SiC oyenera kupanga zida zofananira, maphunziro oyesera, kapena kuwongolera ndi kuyesa njira. Ndi mawonekedwe ake apadera a hexagonal crystal, 4H-SiC ingot imapereka mphamvu zambiri pamagetsi amagetsi, zida zothamanga kwambiri, komanso makina osamva ma radiation.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Katundu

1. Mapangidwe a Crystal ndi Mawonekedwe
Polytype: 4H (magawo a hexagonal)
Lattice Constants:
ndi = 3.073 Å
c = 10.053 Å
Kayendetsedwe: Nthawi zambiri [0001] (C-ndege), koma machitidwe ena monga [11\ overline{2}0] (A-ndege) amapezekanso mukawapempha.

2. Miyeso Yathupi
Diameter:
Zosankha zokhazikika: mainchesi 4 (100 mm) ndi mainchesi 6 (150 mm)
Makulidwe:
Imapezeka mumitundu ya 5-10 mm, yosinthika kutengera zomwe mukufuna.

3. Zida Zamagetsi
Doping Type: Imapezeka mu intrinsic (semi-insulating), n-type (yopangidwa ndi nitrogen), kapena p-type (yopangidwa ndi aluminiyamu kapena boron).

4. Thermal ndi Mechanical Properties
Thermal Conductivity: 3.5-4.9 W/cm·K pa kutentha kwa firiji, zomwe zimathandiza kuti pakhale kutentha kwambiri.
Kuuma: Mohs sikelo 9, kupanga SiC yachiwiri kwa diamondi mu kuuma.

Parameter	Tsatanetsatane	Chigawo
Njira Yakukula	PVT (Physical Vapor Transport)
Diameter	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Polytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Kuzungulira Pamwamba	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (ena)	digiri
Mtundu	N-mtundu
Makulidwe	5-10 / 10-15 />15	mm
Chiyambi cha Flat Orientation	(10-10) ± 5.0˚	digiri
Utali Woyambira Wathyathyathya	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Sekondale Flat Orientation	90˚ CCW kuchokera kumayendedwe ± 5.0˚	digiri
Kutalika kwa Sekondale	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Palibe (150 mm)	mm
Gulu	Research / Dummy

Mapulogalamu

1. Kafukufuku ndi Chitukuko

Ingot-grade 4H-SiC ingot ndi yabwino kwa ma lab a maphunziro ndi mafakitale omwe amayang'ana kwambiri pakupanga zida za SiC. Ubwino wake wapamwamba kwambiri wa crystalline umathandizira kuyesa kolondola pazinthu za SiC, monga:
Maphunziro a Carrier Mobility.
Kufotokozera zolakwika ndi njira zochepetsera.
Kukhathamiritsa kwa njira za kukula kwa epitaxial.

2. Dummy Substrate
Ingot-grade ingot imagwiritsidwa ntchito kwambiri poyesa, kuyesa, ndi kugwiritsa ntchito prototyping. Ndi njira yotsika mtengo ya:
Kusintha kwa parameter mu Chemical Vapor Deposition (CVD) kapena Physical Vapor Deposition (PVD).
Kuunikira etching ndi kupukuta njira m'malo opanga.

3. Zamagetsi Zamagetsi
Chifukwa cha bandgap yake yayikulu komanso matenthedwe apamwamba, 4H-SiC ndimwala wapangodya wamagetsi amagetsi, monga:
Ma MOSFET apamwamba kwambiri.
Schottky Barrier Diodes (SBDs).
Junction Field-Effect Transistors (JFETs).
Mapulogalamuwa akuphatikiza ma inverter agalimoto yamagetsi, ma solar inverters, ndi ma grid anzeru.

4. Zida Zapamwamba-Frequency
Kuyenda kwa ma elekitironi apamwamba kwambiri komanso kuchepa kwapang'onopang'ono kumapangitsa kuti ikhale yoyenera:
Ma transistors a Radio Frequency (RF).
Makina olumikizirana opanda zingwe, kuphatikiza zomangamanga za 5G.
Ntchito zazamlengalenga ndi chitetezo zomwe zimafunikira makina a radar.

5. Makina Olimbana ndi Ma radiation
Kukana kwachilengedwe kwa 4H-SiC pakuwonongeka kwa radiation kumapangitsa kuti ikhale yofunika kwambiri m'malo ovuta monga:
Zida zakufufuza zakuthambo.
Zida zowunikira makina a nyukiliya.
Zamagetsi zamagulu ankhondo.

6. Emerging Technologies
Pamene ukadaulo wa SiC ukupita patsogolo, ntchito zake zikupitilira kukula kukhala magawo monga:
Photonics ndi quantum computing kafukufuku.
Kupanga ma LED amphamvu kwambiri ndi masensa a UV.
Kuphatikiza mu wide-bandgap semiconductor heterostructures.
Ubwino wa 4H-SiC Ingot
Chiyero Chachikulu: Chopangidwa pansi pamikhalidwe yovuta kwambiri kuti muchepetse zinyalala ndi kuchuluka kwa chilema.
Scalability: Imapezeka mu mainchesi 4 ndi 6-inchi kuti ithandizire zosowa zamakampani komanso pazofufuza.
Kusinthasintha: Kusinthika kumitundu yosiyanasiyana ya ma doping ndi machitidwe kuti akwaniritse zofunikira zakugwiritsa ntchito.
Kuchita Kwamphamvu: Kukhazikika kwapamwamba kwamafuta ndi makina pansi pamikhalidwe yovuta kwambiri yogwirira ntchito.

Mapeto

Ingot ya 4H-SiC, yokhala ndi mawonekedwe ake apadera komanso magwiridwe antchito osiyanasiyana, imayima patsogolo pakupanga zinthu zatsopano zamagetsi am'badwo wotsatira ndi ma optoelectronics. Kaya amagwiritsidwa ntchito pofufuza zamaphunziro, zojambula zamafakitale, kapena kupanga zida zapamwamba, ma ingotswa amapereka nsanja yodalirika yokankhira malire aukadaulo. Ndi miyeso yosinthika makonda, doping, ndi mawonekedwe, ingot ya 4H-SiC idapangidwa kuti ikwaniritse zofuna zomwe zikukula pamsika wa semiconductor.
Ngati mukufuna kudziwa zambiri kapena kuyitanitsa, chonde khalani omasuka kuti mudziwe zambiri komanso kulumikizana ndiukadaulo.