SiC Ingot 4H mtundu Dia 4inch 6inch Kukhuthala 5-10mm Kafukufuku / Giredi Yosamveka

SiC Ingot 4H mtundu Dia 4inch 6inch Kukhuthala 5-10mm Kafukufuku / Giredi Yosayerekezeka Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Silicon Carbide (SiC) yakhala ngati chinthu chofunikira kwambiri pakugwiritsa ntchito zamagetsi ndi zamagetsi chifukwa cha mphamvu zake zamagetsi, kutentha, komanso makina apamwamba. 4H-SiC Ingot, yomwe imapezeka m'mimba mwake wa mainchesi 4 ndi mainchesi 6 yokhala ndi makulidwe a 5-10 mm, ndi chinthu chofunikira kwambiri pa kafukufuku ndi chitukuko kapena ngati chinthu chongopeka. Ingot iyi idapangidwa kuti ipatse ofufuza ndi opanga zinthu zapamwamba za SiC zoyenera kupanga zida zoyeserera, maphunziro oyesera, kapena njira zowunikira ndi kuyesa. Ndi kapangidwe kake kapadera ka makristalo a hexagonal, ingot ya 4H-SiC imapereka kugwiritsidwa ntchito kwakukulu pamagetsi amphamvu, zida zama frequency apamwamba, ndi machitidwe osagwiritsa ntchito ma radiation.

Tumizani imelo kwa ife

Mawonekedwe

Katundu

1. Kapangidwe ka Crystal ndi Kuyang'ana
Mtundu wa Polytype: 4H (kapangidwe ka hexagonal)
Zokhazikika za Lattice:
a = 3.073 Å
c = 10.053 Å
Kuyang'ana: Kawirikawiri [0001] (C-plane), koma njira zina monga [11\overline{2}0] (A-plane) zimapezekanso mukapempha.

2. Miyeso Yakuthupi
M'mimba mwake:
Zosankha zokhazikika: mainchesi 4 (100 mm) ndi mainchesi 6 (150 mm)
Kukhuthala:
Imapezeka mu mtunda wa 5-10 mm, ndipo imasintha malinga ndi zomwe mukufuna kugwiritsa ntchito.

3. Katundu wa Magetsi
Mtundu wa Doping: Umapezeka mu intrinsic (semi-insulating), n-type (yokhala ndi nayitrogeni), kapena p-type (yokhala ndi aluminiyamu kapena boron).

4. Katundu wa Kutentha ndi Makina
Kutentha kwa mpweya: 3.5-4.9 W/cm·K kutentha kwa chipinda, zomwe zimathandiza kuti kutentha kusamayende bwino.
Kulimba: Mohs sikelo 9, zomwe zimapangitsa SiC kukhala yachiwiri pambuyo pa diamondi pakulimba.

Chizindikiro	Tsatanetsatane	Chigawo
Njira Yokulira	PVT (Kuyendetsa Nthunzi Yathupi)
M'mimba mwake	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Mtundu wa Polytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Kuyang'ana Pamwamba	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (ena)	digiri
Mtundu	Mtundu wa N
Kukhuthala	5-10 / 10-15 / >15	mm
Kuyang'ana Kwambiri Pang'onopang'ono	(10-10) ± 5.0˚	digiri
Utali Woyamba Wathyathyathya	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Kuyang'ana Kwachiwiri Kwapafupi	90˚ CCW kuchokera ku malo ozungulira ± 5.0˚	digiri
Utali Wachiwiri Wathyathyathya	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Palibe (150 mm)	mm
Giredi	Kafukufuku / Chinyengo

Mapulogalamu

1. Kafukufuku ndi Chitukuko

Ingot ya 4H-SiC yofufuza ndi yabwino kwambiri pa malo ophunzirira ndi mafakitale omwe amayang'ana kwambiri pakupanga zida zochokera ku SiC. Ubwino wake wapamwamba wa kristalo umalola kuyesa molondola zinthu za SiC, monga:
Maphunziro a kuyenda kwa anthu onyamula katundu.
Njira zabwino zofotokozera zolakwika ndi kuchepetsa zolakwika.
Kukonza njira zokulira za epitaxial.

2. Chidutswa Chopanda Chilungamo
Ingot yongopeka imagwiritsidwa ntchito kwambiri poyesa, kuwerengera, ndi kupanga ma prototyping. Ndi njira ina yotsika mtengo ya:
Kuwerengera magawo a njira mu Chemical Nthunzi Yotayika (CVD) kapena Physical Nthunzi Yotayika (PVD).
Kuwunika njira zopukutira ndi kupukuta m'malo opangira zinthu.

3. Zamagetsi Zamagetsi Zamagetsi
Chifukwa cha kusiyana kwakukulu kwa bandgap ndi kutentha kwambiri, 4H-SiC ndi mwala wapangodya wamagetsi amphamvu, monga:
Ma MOSFET amphamvu kwambiri.
Ma Diode a Schottky Barrier (SBDs).
Ma Transistors a Mphamvu Yochokera Kumunda (JFETs).
Mapulogalamuwa akuphatikizapo ma inverter amagetsi, ma inverter a dzuwa, ndi ma grid anzeru.

4. Zipangizo Zogwiritsa Ntchito Ma Frequency Ambiri
Kuyenda kwa ma elekitironi ambiri komanso kutayika kwa mphamvu zochepa zimapangitsa kuti ikhale yoyenera pa:
Ma transistors a Radio Frequency (RF).
Machitidwe olumikizirana opanda zingwe, kuphatikizapo zomangamanga za 5G.
Ntchito zoyendetsera ndege ndi chitetezo zomwe zimafuna makina a radar.

5. Machitidwe Osagonjetsedwa ndi Ma radiation
Kukana kwa 4H-SiC ku kuwonongeka kwa mphamvu ya dzuwa kumapangitsa kuti ikhale yofunika kwambiri m'malo ovuta monga:
Zipangizo zofufuzira mlengalenga.
Zipangizo zowunikira malo opangira magetsi a nyukiliya.
Zamagetsi zamtundu wankhondo.

6. Ukadaulo Watsopano
Pamene ukadaulo wa SiC ukupita patsogolo, ntchito zake zikupitilira kukula m'magawo monga:
Kafukufuku wa Photonics ndi quantum computing.
Kupanga ma LED amphamvu kwambiri ndi masensa a UV.
Kuphatikizana mu ma heterostructure a semiconductor okhala ndi bandgap yayikulu.
Ubwino wa 4H-SiC Ingot
Kuyera Kwambiri: Kopangidwa pansi pa mikhalidwe yovuta kuti kuchepetse zinyalala ndi kuchulukana kwa zilema.
Kukula: Kumapezeka mu mainchesi 4 ndi mainchesi 6 kuti zithandizire zosowa zamakampani komanso zofufuza.
Kusinthasintha: Kusinthasintha malinga ndi mitundu yosiyanasiyana ya mankhwala ozunguza bongo ndi njira zomwe zimagwiritsidwa ntchito kuti zikwaniritse zofunikira zinazake.
Kugwira Ntchito Molimba: Kukhazikika kwapamwamba kwa kutentha ndi makina pamikhalidwe yovuta kwambiri yogwirira ntchito.

Mapeto

Ingot ya 4H-SiC, yokhala ndi mawonekedwe ake apadera komanso ntchito zake zosiyanasiyana, ili patsogolo pa kupanga zinthu zatsopano zamagetsi ndi ma optoelectronics a m'badwo wotsatira. Kaya imagwiritsidwa ntchito pa kafukufuku wamaphunziro, kupanga ma prototyping a mafakitale, kapena kupanga zida zapamwamba, ma ingot awa amapereka nsanja yodalirika yopititsira patsogolo ukadaulo. Ndi miyeso yosinthika, kugwiritsa ntchito mankhwala osokoneza bongo, ndi njira zoyendetsera, ingot ya 4H-SiC imapangidwa kuti ikwaniritse zosowa zomwe makampani opanga ma semiconductor akusintha.
Ngati mukufuna kudziwa zambiri kapena kuyitanitsa, chonde musazengereze kulankhula nafe kuti mudziwe zambiri komanso kuti mudziwe zambiri zokhudza malo ogulitsira.