SiC Epitaxial Wafer ya Zida Zamagetsi - 4H-SiC, N-mtundu, Low Defect Density

Kufotokozera Kwachidule:

SiC Epitaxial Wafer ili pachimake pazida zamakono zogwiritsa ntchito kwambiri semiconductor, makamaka zomwe zimapangidwa kuti zizigwira ntchito zamphamvu kwambiri, zothamanga kwambiri komanso zotentha kwambiri. Wachifupi wa Silicon Carbide Epitaxial Wafer, SiC Epitaxial Wafer imakhala ndi mawonekedwe apamwamba kwambiri, opyapyala a SiC epitaxial omwe amamera pamwamba pa gawo lalikulu la SiC. Kugwiritsa ntchito ukadaulo wa SiC Epitaxial Wafer kukukulirakulira m'magalimoto amagetsi, ma gridi anzeru, makina opangira mphamvu zongowonjezwdwa, ndi zakuthambo chifukwa champhamvu zake zakuthupi ndi zamagetsi poyerekeza ndi zowotcha wamba za silicon.

Titumizireni imelo

Mawonekedwe

Chithunzi chatsatanetsatane

Mawu Oyamba

Mfundo Zopangira SiC Epitaxial Wafer

Kupanga SiC Epitaxial Wafer kumafuna njira yoyendetsedwa kwambiri ndi mankhwala a vapor deposition (CVD). Epitaxial wosanjikiza nthawi zambiri amakula pa gawo lapansi la monocrystalline SiC pogwiritsa ntchito mpweya monga silane (SiH₄), propane (C₃H₈), ndi hydrogen (H₂) pa kutentha kopitilira 1500 ° C. Kukula kwapamwamba kwa epitaxial kumeneku kumatsimikizira kugwirizanitsa bwino kwa crystalline ndi zolakwika zochepa pakati pa epitaxial wosanjikiza ndi gawo lapansi.

Ndondomekoyi ili ndi magawo angapo ofunika:

Kukonzekera kwa gawo lapansi: Chophika cham'munsi cha SiC chimatsukidwa ndikupukutidwa kuti chikhale chosalala cha atomiki.
Kukula kwa CVD: Mu riyakitala yoyera kwambiri, mipweya imachita kuyika wosanjikiza wa SiC wa kristalo pa gawo lapansi.
Doping Control: N-mtundu kapena P-mtundu doping imayambitsidwa panthawi ya epitaxy kuti ikwaniritse zofunikira zamagetsi.
Inspection ndi Metrology: Ma microscopy a kuwala, AFM, ndi ma X-ray diffraction amagwiritsidwa ntchito kutsimikizira makulidwe osanjikiza, ndende ya doping, ndi kachulukidwe kachilema.

SiC Epitaxial Wafer iliyonse imayang'aniridwa mosamalitsa kuti isaloledwe molimba mu makulidwe ofanana, kusalala kwapamtunda, ndi resistivity. Kutha kukonza bwino magawowa ndikofunikira pama MOSFET othamanga kwambiri, ma Schottky diode, ndi zida zina zamagetsi.

Kufotokozera

Parameter	Kufotokozera
Magulu	Sayansi Yazida, Magawo Amodzi a Crystal
Polytype	4H
Doping	Mtundu wa N
Diameter	101 mm
Kulekerera kwa Diameter	± 5%
Makulidwe	0.35 mm
Makulidwe Kulekerera	± 5%
Utali Woyambira Wathyathyathya	22 mm (± 10%)
TTV (Total Thickness Variation)	≤10µm
Warp	≤25µm
Mtengo wa FWHM	≤30 Arc-sec
Pamwamba Pamwamba	Rq ≤0.35 nm

Kugwiritsa ntchito SiC Epitaxial Wafer

Zogulitsa za SiC Epitaxial Wafer ndizofunikira kwambiri m'magawo angapo:

Magalimoto Amagetsi (EVs): Zida zochokera ku SiC Epitaxial Wafer zimawonjezera mphamvu yamagetsi ndikuchepetsa kulemera.
Mphamvu Zongowonjezwdwa: Amagwiritsidwa ntchito mu ma inverters pamakina amagetsi adzuwa ndi mphepo.
Industrial Power Supplies: Yambitsani kusinthasintha kwakukulu, kutentha kwambiri ndi zotayika zochepa.
Zamlengalenga ndi Chitetezo: Oyenera kumadera ovuta omwe amafunikira ma semiconductors amphamvu.
5G Base Stations: Zida za SiC Epitaxial Wafer zimathandizira kachulukidwe kamphamvu kwambiri pamapulogalamu a RF.

SiC Epitaxial Wafer imathandizira mapangidwe ophatikizika, kusintha mwachangu, komanso kusinthika kwamphamvu kwamphamvu poyerekeza ndi zowotcha za silicon.

Ubwino wa SiC Epitaxial Wafer

Tekinoloje ya SiC Epitaxial Wafer imapereka zabwino zambiri:

High Breakdown Voltage: Imalimbana ndi ma voltages mpaka nthawi 10 kuposa ma wafers a Si.
Thermal Conductivity: SiC Epitaxial Wafer imachotsa kutentha mwachangu, kulola kuti zida ziziyenda mozizirira komanso modalirika.
Kuthamanga Kwambiri Kwambiri: Kutayika kwapang'onopang'ono kumathandizira kuyendetsa bwino kwambiri komanso miniaturization.
Wide Bandgap: Imatsimikizira kukhazikika pamagetsi apamwamba komanso kutentha.
Kulimba Kwakuthupi: SiC ndiyokhazikika pamakina komanso yolimba mwamakina, yabwino pakugwiritsa ntchito movutikira.

Ubwino uwu umapangitsa SiC Epitaxial Wafer kukhala chinthu chosankha m'badwo wotsatira wa semiconductors.

FAQ: SiC Epitaxial Wafer

Q1: Kodi pali kusiyana kotani pakati pa SiC wafer ndi SiC Epitaxial Wafer?
Chophika cha SiC chimatanthawuza gawo lalikulu, pomwe SiC Epitaxial Wafer imaphatikizapo wosanjikiza wokulirapo womwe umagwiritsidwa ntchito popanga zida.

Q2: Ndi makulidwe ati omwe alipo a zigawo za SiC Epitaxial Wafer?
Ma Epitaxial layers nthawi zambiri amachokera ku ma micrometer angapo mpaka kupitilira 100 μm, kutengera zomwe zikufunika.

Q3: Kodi SiC Epitaxial Wafer ndi yoyenera kumadera otentha kwambiri?
Inde, SiC Epitaxial Wafer imatha kugwira ntchito pamalo opitilira 600 ° C, kupitilira silicon kwambiri.

Q4: Chifukwa chiyani kachulukidwe kachilema ndikofunikira mu SiC Epitaxial Wafer?
Kuchepa kwachilema kumapangitsa kuti chipangizocho chizigwira ntchito bwino komanso kuti chizichulukirachulukira, makamaka pamakina othamanga kwambiri.

Q5: Kodi N-mtundu ndi P-mtundu wa SiC Epitaxial Wafers onse akupezeka?
Inde, mitundu yonse iwiriyi imapangidwa pogwiritsa ntchito kuwongolera bwino kwa gasi wa dopant panthawi ya epitaxial.

Q6: Ndi makulidwe ati ozungulira omwe ali ofanana ndi SiC Epitaxial Wafer?
Ma diameter okhazikika amaphatikizapo 2-inchi, 4-inchi, 6-inchi, ndi kuchulukirachulukira 8-inchi popanga zida zapamwamba.

Q7: Kodi SiC Epitaxial Wafer imakhudza bwanji mtengo komanso kuchita bwino?
Ngakhale poyamba anali okwera mtengo kuposa silicon, SiC Epitaxial Wafer imachepetsa kukula kwa dongosolo ndi kutayika kwa mphamvu, kupititsa patsogolo mtengo wamtengo wapatali pakapita nthawi yaitali.

Zam'mbuyo: Machubu a Sapphire Kupititsa patsogolo Kudalirika kwa Thermocouple

Ena: 4H-N Mtundu wa SiC Epitaxial Wafer High Voltage High Frequency