Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
Zinthu | Kufotokozera | Zinthu | Kufotokozera |
Diameter | 150 ± 0.2mm | Pamaso (Si-nkhope) roughness | Ra≤0.2nm (5μm*5μm) |
Polytype | 4H | Edge Chip, Scratch, Crack (kuyang'ana kowoneka) | Palibe |
Kukaniza | ≥1E8ohm·cm | TTV | ≤5μm |
Choka wosanjikiza Makulidwe | ≥0.4μm | Warp | ≤35μm |
Zopanda kanthu | ≤5ea/wafer (2mm>D>0.5mm) | Makulidwe | 500±25μm |
Ubwino wa magawo ophatikizika a Semi-insulating SiC ndi awa:
High resistivity: Semi-insulating SiC zipangizo ali ndi resistivity mkulu, kuwapangitsa kuti mwina penapake kutsekereza kuyenda panopa ndi oyenera mitundu ina ya zipangizo zamagetsi.
Kutentha kwapamwamba: Zida za SiC zimatha kugwira ntchito m'malo otentha kwambiri, zomwe zimapangitsa kuti zikhale zoyenera kugwiritsa ntchito magetsi amphamvu kwambiri komanso othamanga kwambiri.
High Breakdown Voltage: Zida za SiC zimakhala ndi magetsi othamanga kwambiri ndipo zimatha kupirira minda yamagetsi yayikulu popanda kuwonongeka kwamagetsi.
Kukaniza kwa Chemical ndi Zachilengedwe: SiC imalimbana ndi dzimbiri ndipo imatha kupirira zovuta zachilengedwe zomwe zingafunike.
Kuchepa kwamphamvu kwamagetsi: Magawo a SiC amalola kutembenuka kwamphamvu kwamphamvu komanso kutsika kwamphamvu kwamagetsi muzamagetsi poyerekeza ndi zida zakale za silicon.
Ponseponse, magawo ophatikizika a SiC okhala ndi theka-insulating amapereka zabwino zambiri pakupanga zida zamagetsi zogwira ntchito kwambiri, makamaka pamapulogalamu omwe amafunikira kutentha kwambiri, kachulukidwe kamphamvu komanso kutembenuka kwamphamvu kwamphamvu.
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Utumiki
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