Zida Zokulirapo za Sapphire Ingot Czochralski CZ Njira Yopangira Zopangira 2inch-12inch Sapphire Wafers

Zida Zokulirapo za Sapphire Ingot Czochralski CZ Njira Yopangira Zowotcha za Sapphire 2inch-12inch Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Sapphire Ingot Growth Equipment (Czochralski Method) ndi makina otsogola omwe amapangidwira kukula koyera kwambiri, kopanda chilema cha safiro single-crystal kukula. Njira ya Czochralski (CZ) imathandizira kuwongolera bwino kwa liwiro la kukoka kwa kristalo (0.5-5 mm / h), kuchuluka kwa kasinthasintha (5-30 rpm), komanso kutentha kwa iridium crucible, kupanga makristalo a axisymmetric mpaka mainchesi 12 (300 mm) . Zipangizozi zimathandizira C/A-plane crystal orientation control, kuthandizira kukula kwa optical-grade, electronic-grade, and doped safire (mwachitsanzo, Cr³⁺ ruby, Ti³⁺ star safire).

XKH imapereka mayankho kumapeto, kuphatikiza makonda a zida (2-12-inch wafer kupanga), kukhathamiritsa (kuchuluka kwa defect <100/cm²), ndi maphunziro aukadaulo, zotulutsa mwezi ndi mwezi za 5,000+ wafers, pazogwiritsa ntchito monga ma LED substrates, GaN epitaxy, ndi semiconductor package.

Titumizireni imelo

Mawonekedwe

Mfundo Yogwirira Ntchito

Njira ya CZ imagwira ntchito motere:
1. Kusungunula Zopangira: Kuyera Kwambiri Al₂O₃ (kuyera> 99.999%) kumasungunuka mu iridium crucible pa 2050-2100 ° C.
2. Maulamuliro a kristalo wa Mbeu: Krustalo la mbewu limatsitsidwa kusungunuka, kenako kukoka mwachangu kuti apange khosi (m'mimba mwake <1 mm) kuti athetse kusuntha.
3. Kupanga Mapewa ndi Kukula Kwambiri: Kuthamanga kwa kukoka kumachepetsedwa kufika 0.2-1 mm / h, pang'onopang'ono kukulitsa kukula kwa kristalo mpaka kukula kwake (mwachitsanzo, 4-12 mainchesi).
4. Annealing ndi Kuzizira: Krustalo imakhazikika pa 0.1-0.5 ° C / min kuti kuchepetsa kupsinjika kwa kutentha komwe kumayambitsa kusweka.
5. Mitundu ya Crystal Yogwirizana:
Gulu Lamagetsi: Magawo a Semiconductor (TTV <5 μm)
Gulu la Optical: mawindo a laser a UV (kutumiza> 90%@200 nm)
Zosiyanasiyana: Ruby (Cr³⁺ concentration 0.01–0.5 wt.%), blue safire chubu

Core System Components

1. Melting System
Iridium Crucible : Imalimbana ndi 2300 ° C, yosamva dzimbiri, yogwirizana ndi kusungunuka kwakukulu (100-400 kg).
Ng'anjo Yotenthetsera Yotenthetsera: Kuwongolera kutentha kwapang'onopang'ono (± 0.5 ° C), kukhathamiritsa ma gradient otentha.

2. Dongosolo Lokoka ndi Kuzungulira
High-Precision Servo Motor: Kukoka kusanja 0.01 mm/h, kukhazikika kozungulira <0.01 mm.
Chisindikizo cha Magnetic Fluid: Kupatsirana kosalumikizana ndi kukula kosalekeza (> maola 72).

3. Thermal Control System
PID Closed-Loop Control: Kusintha mphamvu zenizeni zenizeni (50-200 kW) kuti mukhazikitse malo otentha.
Chitetezo cha Inert Gasi: Kusakaniza kwa Ar/N₂ (99.999% chiyero) kuti mupewe okosijeni.

4. Automation ndi Monitoring
CCD Diameter Monitoring: Ndemanga zenizeni zenizeni (zolondola ± 0.01 mm).
Infrared Thermography: Imayang'anira mawonekedwe olimba amadzimadzi.

CZ vs. KY Njira Yofananira

Parameter	Njira ya CZ	Njira ya KY
Max. Kukula kwa Crystal	12 mainchesi (300 mm)	400 mm (ingot yooneka ngati peyala)
Defect Density	<100/cm²	<50/cm²
Mlingo wa Kukula	0.5-5 mm/h	0.1-2 mm/h
Kugwiritsa Ntchito Mphamvu	50-80 kWh / kg	80-120 kWh / kg
Mapulogalamu	Magawo a LED, GaN epitaxy	Mawindo owoneka bwino, ma ingots akulu
Mtengo	Moderate (ndalama zambiri za zida)	High (njira yovuta)

Mapulogalamu Ofunika Kwambiri

1. Semiconductor Industry
GaN Epitaxial Substrates: 2–8-inch wafers (TTV <10 μm) ya ma Micro-LED ndi ma diode a laser.
Zowotcha za SOI: Kuvuta kwapamtunda <0.2 nm kwa tchipisi chophatikizika cha 3D.

2. Optoelectronics
UV Laser Windows: Kupirira 200 W/cm² mphamvu kachulukidwe kwa lithography Optics.
Ma Infrared Components: Coefficient ya mayamwidwe <10⁻³cm⁻¹ ya kujambula kwamafuta.

3. Consumer Electronics
Smartphone Camera Covers: Mohs hardness 9, 10× scratch resistance resistance.
Zowonetsa za Smartwatch: Makulidwe 0.3-0.5 mm, transmittance> 92%.

4. Chitetezo ndi Zamlengalenga
Mawindo a Nuclear Reactor: Kulekerera kwa radiation mpaka 10¹⁶ n/cm².
Magalasi a Laser High-Power: Thermal deformation <λ/20@1064 nm.

Ntchito za XKH

1. Kusintha kwa Zida
Scalable Chamber Design: Φ200–400 mm masinthidwe a 2–12-inch wafer kupanga.
Doping Flexibility : Imathandizira doping yosowa padziko lapansi (Er/Yb) ndi transition-metal (Ti/Cr) pakupanga ma optoelectronic ogwirizana.

2. Chithandizo Chakumapeto-kumapeto
Kukonzekera Kochita: Maphikidwe ovomerezeka kale (50+) a LED, zida za RF, ndi zida zowumitsidwa ndi ma radiation.
Global Service Network: Kuzindikira kwakutali kwa 24/7 ndikukonza pamalopo ndi chitsimikizo cha miyezi 24.

3. Downstream Processing
Kupanga Wafer: Kucheka, kupera, ndi kupukuta kwa mawafa 2-12-inch (C/A-ndege).
Zogulitsa Zowonjezera Mtengo:
Zowoneka: Mawindo a UV/IR (0.5-50 mm makulidwe).
Zida Zodzikongoletsera: Cr³⁺ ruby (GIA-certified), Ti³⁺ star sapphire.

4. Utsogoleri waukadaulo
Chitsimikizo: Zophika zofananira ndi EMI.
Ma Patent: Ma Patent apakati mu njira yatsopano ya CZ.

Mapeto

Zida za njira za CZ zimapereka mawonekedwe akulu, ziwopsezo zotsika kwambiri, komanso kukhazikika kwazinthu zambiri, zomwe zimapangitsa kukhala chizindikiro chamakampani a LED, semiconductor, ndi chitetezo. XKH imapereka chithandizo chokwanira kuchokera ku zida zogwiritsira ntchito mpaka kukonzanso pambuyo pa kukula, zomwe zimathandiza makasitomala kuti akwaniritse kupanga kristalo ya safiro yotsika mtengo, yogwira ntchito kwambiri.