P-type SiC substrate SiC wafer Dia2inch yatsopano

Ma substrates a silicon carbide a mtundu wa P amagwiritsidwa ntchito popanga zipangizo zamagetsi, monga ma Insulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, yomwe ndi switch yozimitsa. MOSFET=IGFET(chubu cha metal oxide semiconductor field effect, kapena transistor ya insulated gate type field effect). BJT(Bipolar Junction Transistor, yomwe imadziwikanso kuti transistor), bipolar imatanthauza kuti pali mitundu iwiri ya ma elekitironi ndi mabowo omwe amagwira ntchito mu conduction process, nthawi zambiri pamakhala PN junction yomwe imakhudzidwa mu conduction.

Wafer wa silicon carbide (SiC) wa mainchesi awiri uli mu polytype ya 4H kapena 6H. Uli ndi mawonekedwe ofanana ndi ma wafer a silicon carbide (SiC) a n-type, monga kukana kutentha kwambiri, kutentha kwambiri, komanso mphamvu zamagetsi zambiri. Ma substrates a p-type SiC amagwiritsidwa ntchito kwambiri popanga zida zamagetsi, makamaka popanga ma insulated-gate bipolar transistors (IGBTs). Kapangidwe ka ma IGBT nthawi zambiri kamakhala ndi ma PN junctions, pomwe p-type SiC ndi yothandiza powongolera momwe chipangizocho chimagwirira ntchito.