P-mtundu wa SiC gawo lapansi la SiC wafer Dia2inch chatsopano

P-mtundu wa SiC gawo laling'ono la SiC wafer Dia2inch chatsopano Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

2 inch P-Type Silicon Carbide (SiC) Wafer mu 4H kapena 6H polytype. Lili ndi zinthu zofanana ndi N-mtundu wa Silicon Carbide (SiC) wafer, monga kukana kutentha kwapamwamba, kutentha kwapamwamba, kutsika kwa magetsi, etc. P-mtundu wa SiC gawo lapansi amagwiritsidwa ntchito popanga zipangizo zamagetsi, makamaka kupanga Insulated Insulated Gate Bipolar Transistors (IGBT). Mapangidwe a IGBT nthawi zambiri amaphatikiza magawo a PN, pomwe P-mtundu wa SiC imatha kukhala yopindulitsa pakuwongolera machitidwe a zida.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zogulitsa Tags

Mitundu ya P-silicon carbide substrates imagwiritsidwa ntchito popanga zida zamagetsi, monga Insulate-Gate Bipolar transistors (IGBTs).

IGBT = MOSFET+BJT, yomwe ndi chosinthira chozimitsa. MOSFET = IGFET(chitsulo okusayidi semiconductor munda zotsatira chubu, kapena insulated chipata mtundu munda mphamvu transistor). BJT(Bipolar Junction Transistor, yomwe imadziwikanso kuti transistor), bipolar imatanthauza kuti pali mitundu iwiri ya ma elekitironi ndi mabowo onyamula omwe amakhudzidwa ndi kayendetsedwe ka ntchito, nthawi zambiri pamakhala mphambano ya PN yomwe imakhudzidwa ndi ma conduction.

Chowotcha cha 2-inch p-type silicon carbide (SiC) chili mu 4H kapena 6H polytype. Ili ndi zinthu zofanana ndi zowotcha za n-mtundu wa silicon carbide (SiC), monga kukana kutentha kwambiri, kutulutsa kwamafuta kwambiri, komanso kuwongolera kwamagetsi kwambiri. P-type SiC substrates amagwiritsidwa ntchito kwambiri popanga zida zamagetsi, makamaka popanga ma insulated-gate bipolar transistors (IGBTs). kamangidwe ka ma IGBT nthawi zambiri kumaphatikizapo zolumikizirana za PN, pomwe p-type SiC ndiyothandiza pakuwongolera machitidwe a chipangizocho.