P-mtundu wa SiC gawo lapansi la SiC wafer Dia2inch chatsopano

Mitundu ya P-silicon carbide substrates imagwiritsidwa ntchito popanga zida zamagetsi, monga Insulate-Gate Bipolar transistors (IGBTs).

IGBT = MOSFET+BJT, yomwe ndi chosinthira chozimitsa. MOSFET = IGFET(chitsulo okusayidi semiconductor field effect chubu, kapena insulated chipata mtundu kumunda zotsatira transistor). BJT(Bipolar Junction Transistor, yomwe imadziwikanso kuti transistor), bipolar imatanthauza kuti pali mitundu iwiri ya ma elekitironi ndi mabowo onyamula omwe amakhudzidwa ndi kayendetsedwe ka ntchito, nthawi zambiri pamakhala mphambano ya PN yomwe imakhudzidwa ndi ma conduction.

Chowotcha cha 2-inch p-type silicon carbide (SiC) chili mu 4H kapena 6H polytype. Ili ndi zinthu zofanana ndi zowotcha za n-mtundu wa silicon carbide (SiC), monga kukana kutentha kwambiri, kutulutsa kwamafuta kwambiri, komanso kuwongolera kwamagetsi kwambiri. P-type SiC substrates amagwiritsidwa ntchito kwambiri popanga zida zamagetsi, makamaka popanga ma insulated-gate bipolar transistors (IGBTs). mapangidwe a IGBT nthawi zambiri amaphatikizapo ma PN mphumu, pomwe p-mtundu wa SiC ndi wopindulitsa pakuwongolera machitidwe a chipangizocho.