Pakalipano, kampani yathu ikhoza kupitiriza kupereka mtanda wawung'ono wa 8inchN mtundu wa SiC wafers, ngati muli ndi zosowa zachitsanzo, chonde omasuka kundilankhula. Tili ndi zowola zachitsanzo zokonzeka kutumiza.
Pankhani ya zida za semiconductor, kampaniyo yachita bwino kwambiri pakufufuza ndi kupanga makristalo akulu a SiC. Pogwiritsa ntchito makhiristo ake ambewu pambuyo pakukulitsa kambirimbiri, kampaniyo idakula bwino makhiristo a 8-inchi a N-mtundu wa SiC, omwe amathetsa zovuta monga gawo la kutentha kosafanana, kusweka kwa kristalo ndi gawo la gasi laiwisi pakukula kwa makhiristo a 8-inchi a SIC, ndikufulumizitsa kukula kwa makhiristo akuluakulu a SIC ndi ukadaulo wodziyimira pawokha. Kupititsa patsogolo mpikisano wamakampani pamakampani a SiC single crystal substrate. Pa nthawi yomweyo, kampani mwakhama amalimbikitsa kudzikundikira umisiri ndi ndondomeko yaikulu kukula pakachitsulo carbide gawo lapansi kukonzekera experimental mzere, kumalimbitsa kuwombola luso ndi mgwirizano mafakitale kumtunda ndi kumtunda minda, ndipo amagwirizana ndi makasitomala nthawi zonse iterate mankhwala ntchito, ndipo limodzi amalimbikitsa mayendedwe a mafakitale ntchito pakachitsulo carbide zipangizo.
| 8inch N-mtundu wa SiC DSP Zolemba | |||||
| Nambala | Kanthu | Chigawo | Kupanga | Kafukufuku | Dummy |
| 1. Zigawo | |||||
| 1.1 | polytype | -- | 4H | 4H | 4H |
| 1.2 | kuyang'ana pamwamba | ° | <11-20>4±0.5 | <11-20>4±0.5 | <11-20>4±0.5 |
| 2. Parameter yamagetsi | |||||
| 2.1 | dopant | -- | n-mtundu wa Nayitrogeni | n-mtundu wa Nayitrogeni | n-mtundu wa Nayitrogeni |
| 2.2 | resistivity | uwu ·cm | 0.015 ~ 0.025 | 0.01~0.03 | NA |
| 3. Mawotchi parameter | |||||
| 3.1 | awiri | mm | 200±0.2 | 200±0.2 | 200±0.2 |
| 3.2 | makulidwe | μm | 500 ± 25 | 500 ± 25 | 500 ± 25 |
| 3.3 | Notch orientation | ° | [1- 100] ± 5 | [1- 100] ± 5 | [1- 100] ± 5 |
| 3.4 | Kuzama kwa Notch | mm | 1-1.5 | 1-1.5 | 1-1.5 |
| 3.5 | LTV | μm | ≤5(10mm*10mm) | ≤5(10mm*10mm) | ≤10(10mm*10mm) |
| 3.6 | TTV | μm | ≤10 | ≤10 | ≤15 |
| 3.7 | Kugwada | μm | -25-25 | -45-45 | - 65-65 |
| 3.8 | Warp | μm | ≤30 | ≤50 | ≤70 |
| 3.9 | AFM | nm | Ra≤0.2 | Ra≤0.2 | Ra≤0.2 |
| 4. Kapangidwe | |||||
| 4.1 | kachulukidwe ka micropipe | ndi cm2 | ≤2 | ≤10 | ≤50 |
| 4.2 | zitsulo | ma atomu/cm2 | ≤1E11 | ≤1E11 | NA |
| 4.3 | TSD | ndi cm2 | ≤500 | ≤1000 | NA |
| 4.4 | BPD | ndi cm2 | ≤2000 | ≤5000 | NA |
| 4.5 | TED | ndi cm2 | ≤7000 | ≤10000 | NA |
| 5. Khalidwe labwino | |||||
| 5.1 | kutsogolo | -- | Si | Si | Si |
| 5.2 | kumaliza pamwamba | -- | Si-nkhope CMP | Si-nkhope CMP | Si-nkhope CMP |
| 5.3 | chidutswa | mkate / mkate | ≤100(kukula≥0.3μm) | NA | NA |
| 5.4 | zikande | mkate / mkate | ≤5, Total Utali≤200mm | NA | NA |
| 5.5 | M'mphepete tchipisi/ma indents/ming'alu/madontho/kuipitsidwa | -- | Palibe | Palibe | NA |
| 5.6 | Magawo a polytype | -- | Palibe | Chigawo ≤10% | Chigawo ≤30% |
| 5.7 | chizindikiro chakutsogolo | -- | Palibe | Palibe | Palibe |
| 6. Back khalidwe | |||||
| 6.1 | kumaliza kumbuyo | -- | C-nkhope MP | C-nkhope MP | C-nkhope MP |
| 6.2 | zikande | mm | NA | NA | NA |
| 6.3 | Kumbuyo zolakwika m'mphepete chips / indents | -- | Palibe | Palibe | NA |
| 6.4 | Msana roughness | nm | Ra≤5 | Ra≤5 | Ra≤5 |
| 6.5 | Kulemba kumbuyo | -- | Notch | Notch | Notch |
| 7. Mphepete | |||||
| 7.1 | m'mphepete | -- | Chamfer | Chamfer | Chamfer |
| 8. Phukusi | |||||
| 8.1 | kuyika | -- | Epi-okonzeka ndi vacuum kuyika | Epi-okonzeka ndi vacuum kuyika | Epi-okonzeka ndi vacuum kuyika |
| 8.2 | kuyika | -- | Zophika zambiri kupaka makaseti | Zophika zambiri kupaka makaseti | Zophika zambiri kupaka makaseti |
Nthawi yotumiza: Apr-18-2023