Chiyambi cha silicon carbide
Silicon carbide (SiC) ndi zida zopangira semiconductor zopangidwa ndi kaboni ndi silicon, zomwe ndi zida zabwino kwambiri zopangira kutentha kwambiri, ma frequency apamwamba, zida zamphamvu kwambiri komanso zida zapamwamba kwambiri. Poyerekeza ndi zinthu zachikhalidwe za silicon (Si), kusiyana kwa gulu la silicon carbide ndi kuwirikiza katatu kuposa silicon. The matenthedwe madutsidwe ndi 4-5 nthawi silicon; Mphamvu yowonongeka ndi 8-10 nthawi ya silicon; Kuthamanga kwamagetsi pamagetsi ndi 2-3 nthawi ya silicon, yomwe imakwaniritsa zosowa zamakampani amakono amphamvu kwambiri, magetsi okwera komanso ma frequency apamwamba. Amagwiritsidwa ntchito makamaka popanga zida zamagetsi zothamanga kwambiri, zothamanga kwambiri, zamphamvu komanso zotulutsa kuwala. Magawo ogwiritsira ntchito kumunsi akuphatikizapo gridi yanzeru, magalimoto oyendetsa magetsi atsopano, mphamvu ya mphepo ya photovoltaic, kulankhulana kwa 5G, etc. Silicon carbide diode ndi MOSFETs akhala akugwiritsidwa ntchito pamalonda.
Kukana kutentha kwakukulu. The gulu kusiyana m'lifupi la pakachitsulo carbide ndi 2-3 nthawi pakachitsulo, ma elekitironi n'zovuta kusintha pa kutentha, ndipo akhoza kupirira kutentha ntchito apamwamba, ndi matenthedwe madutsidwe wa pakachitsulo carbide ndi 4-5 nthawi ya pakachitsulo, kupanga chipangizo kutentha kuwonongeka mosavuta ndi malire ntchito kutentha apamwamba. Kukana kwa kutentha kwapamwamba kumatha kukulitsa mphamvu zamagetsi ndikuchepetsa zofunikira pazida zoziziritsa, kupangitsa kuti terminal ikhale yopepuka komanso yaying'ono.
Kupirira kuthamanga kwambiri. Mphamvu yamagetsi ya silicon carbide yowononga mphamvu ya silicon carbide ndi nthawi 10 kuposa ya silicon, yomwe imatha kupirira ma voltages apamwamba ndipo ndiyoyenera kwambiri pazida zamagetsi.
Mkulu pafupipafupi kukana. Silicon carbide imakhala ndi kuchuluka kwa ma elekitironi othamangitsidwa kuwirikiza kawiri kuposa silicon, zomwe zimapangitsa kuti pakhale kusakhalapo kwa mchira wapano panthawi yotseka, zomwe zimatha kusintha ma frequency a chipangizocho ndikuzindikira kuchepera kwa chipangizocho.
Kutaya mphamvu zochepa. Poyerekeza ndi zinthu za silicon, silicon carbide imakhala yotsika kwambiri komanso yotsika kwambiri. Nthawi yomweyo, kuchuluka kwa band-gap m'lifupi mwa silicon carbide kumachepetsa kwambiri kutayikira kwapano komanso kutaya mphamvu. Kuonjezera apo, chipangizo cha silicon carbide sichikhala ndi zochitika zamakono panthawi yotseka, ndipo kutayika kosinthika kumakhala kochepa.
Silicon carbide industry unyolo
Zimaphatikizapo gawo lapansi, epitaxy, mapangidwe a chipangizo, kupanga, kusindikiza ndi zina zotero. Silicon carbide kuchokera kuzinthu kupita ku chipangizo chamagetsi cha semiconductor idzakhala ndi kukula kwa kristalo imodzi, kudulidwa kwa ingot, kukula kwa epitaxial, kapangidwe kake, kupanga, kuyika ndi njira zina. Pambuyo pa kaphatikizidwe ka silicon carbide powder, silicon carbide ingot imapangidwa poyamba, ndiyeno gawo lapansi la silicon carbide limapezeka mwa kudula, kugaya ndi kupukuta, ndipo pepala la epitaxial limapezeka ndi kukula kwa epitaxial. Epitaxial wafer amapangidwa ndi silicon carbide kudzera mu lithography, etching, ion implantation, chitsulo passivation ndi njira zina, chowotchacho chimadulidwa kufa, chipangizocho chimapakidwa, ndipo chipangizocho chimaphatikizidwa mu chipolopolo chapadera ndikusonkhanitsidwa kukhala gawo.
Kumtunda kwa unyolo wamakampani 1: gawo lapansi - kukula kwa kristalo ndiye ulalo woyambira
Silicon carbide gawo lapansi nkhani pafupifupi 47% ya mtengo wa zida pakachitsulo carbide, apamwamba kupanga zotchinga luso, mtengo waukulu, ndiye pachimake cha tsogolo lalikulu mafakitale SiC.
Malinga ndi kusiyana kwa electrochemical katundu, silicon carbide gawo lapansi akhoza kugawidwa magawo conductive (resistivity dera 15 ~ 30mΩ·cm) ndi theka insulated magawo (resistivity apamwamba kuposa 105Ω · cm). Magawo awiriwa amagwiritsidwa ntchito popanga zida zamphamvu monga zida zamagetsi ndi zida zamawayilesi motsatana pambuyo pakukula kwa epitaxial. Pakati pawo, theka-insulated silicon carbide gawo lapansi makamaka ntchito kupanga gallium nitride RF zipangizo, zipangizo photoelectric ndi zina zotero. Pakukula gan epitaxial layer pa semi-insulated SIC substrate, sic epitaxial mbale imakonzedwa, yomwe imatha kukonzedwanso kukhala zida za HEMT gan iso-nitride RF. Conductive silicon carbide gawo lapansi limagwiritsidwa ntchito makamaka popanga zida zamagetsi. Osiyana ndi chikhalidwe silicon mphamvu chipangizo kupanga, ndi pakachitsulo carbide mphamvu chipangizo sangathe mwachindunji pa silicon carbide gawo lapansi, ndi pakachitsulo carbide epitaxial wosanjikiza ayenera kukhala wamkulu pa gawo lapansi conductive kupeza silicon carbide epitaxial pepala, ndi wosanjikiza epitaxial amapangidwa pa diode Schottky, IGBT mphamvu, MOS ndi zipangizo zina.
Silicon carbide ufa adapangidwa kuchokera ku chiyero chapamwamba cha kaboni ufa ndi chiyero chachikulu cha silicon ufa, ndipo makulidwe osiyanasiyana a silicon carbide ingot adakulitsidwa pansi pa gawo la kutentha kwapadera, kenako gawo lapansi la silicon carbide lidapangidwa kudzera munjira zingapo. core process ikuphatikizapo:
Kaphatikizidwe kazinthu zopangira: Kuyeretsa kwakukulu kwa silicon ufa + tona kumasakanizidwa molingana ndi chilinganizo, ndipo zomwe zimachitika mu chipinda chochitiramo pansi pa kutentha kwakukulu kopitilira 2000 ° C kupanga tinthu tating'ono ta silicon carbide ndi mtundu wina wa kristalo ndi kukula kwa tinthu. Ndiye mwa kuphwanya, kuwunika, kuyeretsa ndi njira zina, kuti akwaniritse zofunikira za chiyero cha silicon carbide ufa zopangira.
Kukula kwa Crystal ndiye njira yayikulu yopangira silicon carbide substrate, yomwe imatsimikizira mphamvu yamagetsi ya silicon carbide gawo lapansi. Pakali pano, njira zazikulu za kukula kwa kristalo ndi kutengerapo kwa nthunzi (PVT), kutentha kwa mankhwala opangira mpweya (HT-CVD) ndi epitaxy yamadzimadzi (LPE). Pakati pawo, njira ya PVT ndiyo njira yodziwika bwino yakukula kwa malonda a gawo lapansi la SiC pakadali pano, yokhala ndi luso lapamwamba kwambiri komanso lomwe limagwiritsidwa ntchito kwambiri muukadaulo.
Kukonzekera kwa gawo lapansi la SiC ndizovuta, zomwe zimatsogolera ku mtengo wake wapamwamba
Kuwongolera kumunda kumakhala kovuta: Si crystal rod kukula kumangofunika 1500 ℃, pamene ndodo ya crystal ya SiC ikuyenera kukula pa kutentha kwakukulu kuposa 2000 ℃, ndipo pali ma isomers oposa 250 SiC, koma 4H-SiC imodzi yokha ya kristalo yopanga zipangizo zamagetsi, ngati sichoncho, adzalandira machitidwe ena a kristalo. Komanso, kutentha gradient mu crucible amatsimikiza mlingo wa SiC sublimation kutengerapo ndi makonzedwe ndi kukula akafuna maatomu mpweya pa mawonekedwe galasi, zomwe zimakhudza mlingo wa galasi kukula ndi khalidwe galasi, choncho m'pofunika kupanga mwadongosolo kutentha kulamulira kumunda luso. Poyerekeza ndi zipangizo za Si, kusiyana kwa kupanga kwa SiC kumakhalanso mu kutentha kwapamwamba monga kutentha kwa ion implantation, kutentha kwa okosijeni, kutentha kwa kutentha, ndi ndondomeko ya chigoba cholimba chomwe chimafunidwa ndi kutentha kwakukulu kumeneku.
Kukula pang'onopang'ono kwa kristalo: kukula kwa ndodo ya Si crystal kumatha kufika 30 ~ 150mm / h, ndipo kupanga 1-3m silicon crystal ndodo kumangotenga tsiku limodzi; SiC crystal ndodo ndi njira ya PVT monga chitsanzo, mlingo wa kukula ndi za 0.2-0.4mm / h, masiku 7 kukula zosakwana 3-6cm, mlingo wa kukula ndi zosakwana 1% za silicon zakuthupi, mphamvu yopanga ndi yochepa kwambiri.
Magawo apamwamba a mankhwala ndi zokolola zochepa: magawo apakati a gawo lapansi la SiC akuphatikizapo kachulukidwe ka microtubule, kachulukidwe ka dislocation, resistivity, warpage, roughness pamwamba, ndi zina zotero.
Zinthuzo zimakhala ndi kuuma kwakukulu, kuphulika kwakukulu, nthawi yayitali yodula komanso kuvala kwambiri: SiC Mohs kuuma kwa 9.25 ndi yachiwiri kwa diamondi, zomwe zimabweretsa kuwonjezeka kwakukulu kwa zovuta kudula, kugaya ndi kupukuta, ndipo zimatenga pafupifupi maola 120 kudula zidutswa 35-40 za ingot wandiweyani wa 3cm. Kuonjezera apo, chifukwa cha kuwonongeka kwakukulu kwa SiC, kuvala kwachitsulo chophatikizira kumakhala kochulukirapo, ndipo chiŵerengero chotuluka chimakhala pafupifupi 60%.
Chitukuko: Kuwonjezeka kwa kukula + kutsika kwamitengo
Msika wapadziko lonse wa SiC mzere wopanga voliyumu 6 ukukula, ndipo makampani otsogola alowa mumsika wa mainchesi 8. Ntchito zachitukuko zapakhomo nthawi zambiri zimakhala mainchesi 6. Pakali pano, ngakhale makampani ambiri zoweta akadali zochokera mizere kupanga 4-inchi, koma makampani pang'onopang'ono kukula kwa 6 inchi, ndi kukhwima kwa 6-inchi zothandizira zipangizo luso, zoweta SiC gawo lapansi luso komanso pang'onopang'ono kuwongolera chuma cha sikelo ya mizere kupanga lalikulu, ndipo panopa zoweta 6-inchi kupanga misa kusiyana kwa nthawi yafupika kwa zaka 7. Kukula kwakukulu kwa tchipisi kumatha kubweretsa kuchuluka kwa tchipisi tating'ono, kuwongolera zokolola, ndikuchepetsa kuchuluka kwa tchipisi ta m'mphepete, ndipo mtengo wa kafukufuku ndi chitukuko ndi kutayika kwa zokolola zidzasungidwa pafupifupi 7%, potero kuwongolera kagwiritsidwe kake ka mkate.
Pali zovuta zambiri pakupanga zida
Kutsatsa kwa SiC diode kumakulitsidwa pang'onopang'ono, pakali pano, opanga angapo apakhomo apanga zinthu za SiC SBD, zida zapakati komanso zapamwamba za SiC SBD zimakhala ndi kukhazikika kwabwino, m'galimoto ya OBC, kugwiritsa ntchito SiC SBD + SI IGBT kuti akwaniritse kachulukidwe wokhazikika. Pakalipano, palibe zopinga pakupanga kwapatent kwa zinthu za SiC SBD ku China, ndipo kusiyana ndi mayiko akunja ndi kochepa.
SiC MOS idakali ndi zovuta zambiri, pakadali kusiyana pakati pa SiC MOS ndi opanga kunja kwa nyanja, ndipo nsanja yoyenera yopangira ikumangidwabe. Pakalipano, ST, Infineon, Rohm ndi zina za 600-1700V SiC MOS zakwanitsa kupanga misa ndikusaina ndikutumizidwa ndi mafakitale ambiri opangira zinthu, pamene zojambula zapakhomo za SiC MOS zatsirizidwa, ambiri opanga mapangidwe akugwira ntchito ndi nsalu pamayendedwe ophatikizika, ndipo pambuyo pake kutsimikizika kwamakasitomala kumafunikirabe nthawi yayitali, kotero pamakhala nthawi yayitali yogulitsa.
Pakalipano, mapangidwe a planar ndiye chisankho chachikulu, ndipo mtundu wa ngalande umagwiritsidwa ntchito kwambiri m'munda wothamanga kwambiri m'tsogolomu. Planar kapangidwe SiC MOS opanga ambiri, dongosolo planar si zophweka kubala mavuto kusweka m'deralo poyerekeza ndi poyambira, okhudza bata la ntchito, mu msika pansipa 1200V ali osiyanasiyana mtengo ntchito, ndi dongosolo planar ndi losavuta mu kupanga mapeto, kukumana manufacturability ndi mtengo kulamulira mbali ziwiri. Chipangizo cha groove chili ndi zabwino zake zotsika kwambiri za parasitic inductance, liwiro losinthira mwachangu, kutayika kochepa komanso magwiridwe antchito apamwamba.
2--SiC wafer nkhani
Kupanga kwa msika wa Silicon carbide ndi kukula kwa malonda, samalani ndi kusalinganika kwadongosolo pakati pa kupezeka ndi kufunikira
Ndi kukula kwachangu kwa msika wamagetsi amagetsi othamanga kwambiri komanso amphamvu kwambiri, malire amagetsi a zida za silicon-based semiconductor akhala akudziwika, ndipo zida za m'badwo wachitatu za semiconductor zoimiridwa ndi silicon carbide (SiC) zakhala zotukuka pang'onopang'ono. Kuchokera mfundo ntchito maganizo, pakachitsulo carbide ali 3 nthawi gulu kusiyana m'lifupi zinthu pakachitsulo, 10 nthawi zovuta kuwonongeka magetsi kumunda mphamvu, 3 nthawi matenthedwe matenthedwe, kotero pakachitsulo carbide zipangizo mphamvu ndi oyenera pafupipafupi, kuthamanga, kutentha kwambiri ndi ntchito zina, kuthandiza kusintha dzuwa ndi kachulukidwe mphamvu ya magetsi kachitidwe magetsi.
Pakali pano, SiC diode ndi SiC MOSFETs pang'onopang'ono anasamukira kumsika, ndipo pali zinthu okhwima kwambiri, amene SiC diode ntchito kwambiri m'malo mwa silicon-based diode m'madera ena chifukwa alibe mwayi wobwezera kuchira; SiC MOSFET imagwiritsidwanso ntchito pang'onopang'ono pamagalimoto, kusungirako mphamvu, mulu wolipiritsa, photovoltaic ndi magawo ena; M'munda wa ntchito magalimoto, azimuth modularization akukhala mochulukirachulukira, ntchito wapamwamba wa SiC ayenera kudalira njira ma CD kuti akwaniritse, mwaukadaulo ndi okhwima chipolopolo kusindikiza monga mainstream, tsogolo kapena kuti pulasitiki kusindikiza chitukuko, makhalidwe ake makonda chitukuko ndi oyenera kwambiri ma modules SiC.
Mtengo wa silicon carbide ukutsika liwiro kapena kupitilira momwe mungaganizire
Kugwiritsa ntchito zida za silicon carbide kumakhala kochepa chifukwa cha kukwera mtengo, mtengo wa SiC MOSFET pansi pamlingo womwewo ndi nthawi 4 kuposa wa IGBT wa Si based, izi ndichifukwa choti njira ya silicon carbide ndizovuta, momwe kukula kwa kristalo limodzi ndi epitaxial sikungokhala kovutirapo pa chilengedwe, komanso kukula kwapang'onopang'ono, ndi kung'ambika kwa kristalo kupyola munjira yodula. Kutengera ndi mawonekedwe ake akuthupi komanso umisiri waubwana wokonza, zokolola za gawo lapansi zapakhomo ndizochepera 50%, ndipo zinthu zosiyanasiyana zimapangitsa kuti pakhale mitengo yayikulu yagawo ndi epitaxial.
Komabe, mtengo zikuchokera silicon carbide zipangizo ndi zipangizo pakachitsulo ofotokoza ndi diametrically zosiyana, gawo lapansi ndi epitaxial ndalama za nkhani kutsogolo njira 47% ndi 23% ya chipangizo chonse motero, okwana pafupifupi 70%, kapangidwe kachipangizo, kupanga ndi kusindikiza maulalo a nkhani kumbuyo njira kwa 30% okha, mtengo kupanga ndi silicon-based kupanga zipangizo ndi concentrated kumbuyo kwa zipangizo silicon-based kupanga zipangizo silicon-based. 50%, ndipo mtengo wa gawo lapansi ndi 7% yokha. Chodabwitsa cha mtengo wamakampani a silicon carbide mozondoka zikutanthauza kuti opanga ma epitaxy omwe ali pamwamba pa mitsinje ali ndi ufulu wolankhula, womwe ndi chinsinsi cha mapangidwe amakampani apakhomo ndi akunja.
Kuchokera pamalingaliro amphamvu pamsika, kuchepetsa mtengo wa silicon carbide, kuwonjezera pa kuwongolera silicon carbide yayitali kristalo ndi slicing, ndikukulitsa kukula kwa mkate, womwenso ndi njira yokhwima ya chitukuko cha semiconductor m'mbuyomu, Wolfspeed data zikuwonetsa kuti silicon carbide gawo lapansi Mokweza kuchokera pa mainchesi 6 mpaka 90% yopangidwa ndi chip-80%, kuthandizira kupanga onjezerani zokolola. Ikhoza kuchepetsa mtengo wophatikizana ndi 50%.
2023 amadziwika kuti "8-inchi SiC chaka choyamba", chaka chino, zoweta ndi akunja pakachitsulo carbide opanga imathandizira masanjidwe a 8-inchi pakachitsulo carbide, monga Wolfspeed wopenga ndalama za 14.55 biliyoni US madola kwa silicon carbide kupanga kukula, gawo lofunika lomwe ndi yomanga 8-inchi zopangira zitsulo mamilimita SiC20 kuonetsetsa tsogolo la zitsulo mamilimita 0. ku makampani angapo; Domestic Tianyue Advanced ndi Tianke Heda asayinanso mapangano anthawi yayitali ndi Infineon kuti azipereka magawo 8-inch silicon carbide mtsogolomo.
Kuyambira chaka chino, silicon carbide ikwera kuchokera mainchesi 6 mpaka 8 mainchesi, Wolfspeed akuyembekeza kuti pofika 2024, mtengo wa unit chip wa 8 mainchesi gawo lapansi poyerekeza ndi mtengo wa unit chip wa mainchesi 6 mu 2022 udzachepetsedwa ndi 60%, ndipo kutsika kwamitengo kudzatsegulanso msika wa Consul. Msika wamakono wazinthu za 8-inch ndi wochepera 2%, ndipo msika ukuyembekezeka kukula mpaka 15% pofika 2026.
Ndipotu, mlingo wa kuchepa kwa mtengo wa silicon carbide gawo lapansi mwina upambana maganizo a anthu ambiri, panopa msika kupereka 6-inchi gawo lapansi ndi 4000-5000 yuan/chidutswa, poyerekeza ndi chiyambi cha chaka wagwa kwambiri, akuyembekezeka kugwa m'munsimu 4000 yuan chaka chamawa, ndi ofunika kudziwa kuti mtengo wamtengo wapatali kwa ogulitsa malonda ayamba kutsika mtengo. chitsanzo cha nkhondo yamtengo wapatali, makamaka anaikira pa silicon carbide gawo lapansi kotunga wakhala ndi zokwanira m'munda otsika-voteji, opanga zoweta ndi akunja ndi mwamakani kukulitsa mphamvu yopanga, kapena kulola silicon carbide gawo lapansi oversupply siteji kale kuposa mmene ankaganizira.
Nthawi yotumiza: Jan-19-2024