N-Type SiC pa Si Composite Substrates Dia6inch

N-Type SiC pa Si composite substrates ndi zida za semiconductor zomwe zimakhala ndi n-type silicon carbide (SiC) zoyikidwa pagawo la silicon (Si).

Titumizireni imelo

Tsatanetsatane wa Zamalonda

等级Gulu	U 级	P级	D级
	Low BPD Grade	Kalasi Yopanga	Dummy Grade
直径Diameter	150.0 mm± 0.25mm
厚度Makulidwe	500 μm ± 25μm
晶片方向Wafer Orientation	Kutalikirana: 4.0 ° kulowera <11-20 > ± 0.5 ° kwa 4H-N Pa axis: <0001> ± 0.5 ° kwa 4H-SI
主定位边方向Nyumba Yoyambira	{10-10}±5.0°
主定位边长度Utali Woyambira Wathyathyathya	47.5 mm ± 2.5 mm
边缘Kupatula m'mphepete	3 mm
总厚度变化/弯曲度/翘曲度 TTV/Uta/Warp	≤15μm /≤40μm /≤60μm
微管密度和基面位错MPD & BPD	MPD≤1 cm-2	MPD≤5 cm-2	MPD≤15 cm-2
	BPD≤1000cm-2
电阻率Kukaniza	≥1E5 Ω·cm
表面粗糙度Ukali	Chipolishi Ra≤1 nm
	CMP Ra≤0.5 nm
裂纹(强光灯观测) #	Palibe		Utali wophatikiza ≤10mm, utali umodzi≤2mm
Ming'alu ndi kuwala kwakukulu
六方空洞（强光灯观测）*	Malo owonjezera ≤1%		Malo owonjezera ≤5%
Hex Plates ndi kuwala kwambiri
多型(强光灯观测)*	Palibe		Malo owonjezera≤5%
Madera a Polytype ndi kuwala kwakukulu
划痕(强光灯观测)*&	3 zokopa mpaka 1 × wafer awiri		5 zokopa mpaka 1 × wafer awiri
Kukwapula ndi kuwala kwakukulu	kutalika kokwanira		kutalika kokwanira
崩边# Chip chapakatikati	Palibe		5 zololedwa, ≤1 mm iliyonse
表面污染物 (强光灯观测）	Palibe
Kuyipitsidwa ndi kuwala kwamphamvu kwambiri