N-Type SiC pa Si Composite Substrates Dia6inch
| 等级Giredi | U 级 | P级 | D级 |
| Kalasi Yotsika ya BPD | Gulu Lopanga | Giredi Yopanda Chilungamo | |
| 直径M'mimba mwake | 150.0 mm±0.25mm | ||
| 厚度Kukhuthala | 500 μm±25μm | ||
| 晶片方向Kuwongolera kwa Wafer | Kutseka mzere: 4.0°kulunjika < 11-20 > ± 0.5°kwa 4H-N Pa mzere: <0001>± 0.5°kwa 4H-SI | ||
| 主定位边方向Nyumba Yaikulu | {10-10}±5.0° | ||
| 主定位边长度Utali Woyamba Wathyathyathya | 47.5 mm±2.5 mm | ||
| 边缘Kupatula malire | 3 mm | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Uta/Warp | ≤15μm /≤40μm /≤60μm | ||
| 微管密度和基面位错MPD&BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Kusakhazikika | ≥1E5 Ω·cm | ||
| 表面粗糙度Kuuma | Chipolishi Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Palibe | Kutalika kokwanira ≤10mm, kutalika kamodzi ≤2mm | |
| Ming'alu chifukwa cha kuwala kwamphamvu kwambiri | |||
| 六方空洞（强光灯观测）* | Malo osonkhanitsidwa ≤1% | Malo osonkhanitsidwa ≤5% | |
| Ma Hex Plates okhala ndi kuwala kwamphamvu kwambiri | |||
| 多型(强光灯观测)* | Palibe | Malo osonkhanitsidwa ≤5% | |
| Malo a Polytype ndi kuwala kwamphamvu kwambiri | |||
| 划痕(强光灯观测)*& | Zikwapu zitatu mpaka 1 × m'mimba mwake wa wafer | Mikwingwirima 5 mpaka 1 × m'mimba mwake wa wafer | |
| Kukanda chifukwa cha kuwala kwamphamvu kwambiri | kutalika kokwanira | kutalika kokwanira | |
| 崩边# Chip ya m'mphepete | Palibe | 5 zololedwa, ≤1 mm iliyonse | |
| 表面污染物(强光灯观测） | Palibe | ||
| Kuipitsidwa ndi kuwala kwamphamvu kwambiri | |||
Chithunzi Chatsatanetsatane
