InSb wafer 2inch 3inch undoped Ntype P mtundu orientation 111 100 kwa Infrared Detectors

Kufotokozera Kwachidule:

Zowotcha za Indium Antimonide (InSb) ndi zida zofunika kwambiri zomwe zimagwiritsidwa ntchito muukadaulo wozindikira ma infrared chifukwa cha bandgap yawo yopapatiza komanso kuyenda kwa ma elekitironi. Amapezeka mu 2-inch ndi 3-inch diameter, zowotcha izi zimaperekedwa mosiyanasiyana, mtundu wa N, ndi P-mtundu. Zophikazo zimapangidwa ndi mawonekedwe a 100 ndi 111, zomwe zimapereka kusinthasintha kwa mitundu yosiyanasiyana ya infrared komanso kugwiritsa ntchito semiconductor. Kumverera kwakukulu komanso phokoso lochepa la zowotcha za InSb zimawapangitsa kukhala abwino kuti agwiritsidwe ntchito pazidziwitso zapakati pa wavelength infrared (MWIR), makina oyerekeza a infrared, ndi ntchito zina za optoelectronic zomwe zimafuna kulondola komanso kuchita bwino kwambiri.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zogulitsa Tags

Mawonekedwe

Zosankha za Doping:
1. Zosinthidwa:Zophika izi ndizopanda ma doping agents ndipo zimagwiritsidwa ntchito makamaka pazinthu zapadera monga kukula kwa epitaxial, komwe chophikacho chimakhala ngati gawo lapansi loyera.
2.N-Mtundu (Te Doped):Tellurium (Te) doping imagwiritsidwa ntchito popanga zowotcha zamtundu wa N, zopatsa ma elekitironi apamwamba kwambiri ndikuzipanga kukhala zoyenera zowunikira ma infrared, zamagetsi zothamanga kwambiri, ndi ntchito zina zomwe zimafuna kuyenda bwino kwa ma elekitironi.
3.P-Mtundu (Ge Doped):Doping ya Germanium (Ge) imagwiritsidwa ntchito popanga zowotcha zamtundu wa P, zomwe zimapereka kuyenda kwa mabowo apamwamba komanso kupereka magwiridwe antchito abwino kwambiri a masensa a infrared ndi ma photodetectors.

Zosankha Zakukula:
1.Mawotchiwa amapezeka mu 2-inchi ndi 3-inch diameters. Izi zimatsimikizira kuyanjana ndi njira zosiyanasiyana zopangira semiconductor ndi zida.
2.Wafer wa 2-inch ali ndi 50.8±0.3mm m'mimba mwake, pamene 3-inch wafer ili ndi 76.2±0.3mm m'mimba mwake.

Mayendedwe:
1.Mawotchiwa amapezeka ndi maulendo a 100 ndi 111. Mawonekedwe a 100 ndi abwino kwa magetsi othamanga kwambiri ndi ma infrared detectors, pamene mawonekedwe a 111 amagwiritsidwa ntchito kawirikawiri pazida zomwe zimafuna magetsi kapena kuwala.

Ubwino wa Pamwamba:
1.Zophika izi zimabwera ndi malo opukutidwa / okhomedwa kuti akhale abwino kwambiri, zomwe zimapangitsa kuti pakhale ntchito yabwino pamapulogalamu omwe amafunikira mawonekedwe owoneka bwino kapena magetsi.
2.Kukonzekera kwapamwamba kumatsimikizira kuchepa kwapang'onopang'ono, kupangitsa kuti zowomba izi zikhale zabwino kwa ntchito zowunikira ma infrared pomwe kusasinthasintha kwa magwiridwe antchito ndikofunikira.

Epi-Ready:
1. Zophika izi ndi zokonzeka epi, kuzipanga kukhala zoyenera kugwiritsa ntchito zomwe zikukhudzana ndi kukula kwa epitaxial komwe zigawo zina zakuthupi zidzayikidwa pa chowotcha kuti apange zida zapamwamba za semiconductor kapena optoelectronic.

Mapulogalamu

1. Zodziwikiratu:Zowotcha za InSb zimagwiritsidwa ntchito kwambiri popanga zida zowunikira ma infrared, makamaka m'magulu apakati pa wavelength infrared (MWIR). Ndiofunikira pamawonekedwe ausiku, kujambula kwamafuta, komanso kugwiritsa ntchito zida zankhondo.
2.Makina Ojambula a Infrared:Kukhudzika kwakukulu kwa zowotcha za InSb zimalola kujambulidwa kwa infrared m'magawo osiyanasiyana, kuphatikiza chitetezo, kuyang'anira, ndi kafukufuku wasayansi.
3.Zamagetsi Zothamanga Kwambiri:Chifukwa chakuyenda kwambiri kwa ma elekitironi, zowotcha izi zimagwiritsidwa ntchito pazida zamagetsi zapamwamba monga ma transistors othamanga kwambiri ndi zida za optoelectronic.
4.Quantum Well Devices:Zophika za InSb ndizoyenera kugwiritsa ntchito chitsime cha quantum mu ma lasers, zowunikira, ndi makina ena optoelectronic.

Product Parameters

Parameter	2-inchi	3-inchi
Diameter	50.8±0.3mm	76.2 ± 0.3mm
Makulidwe	500±5μm	650±5μm
Pamwamba	Wopukutidwa/Zokhazikika	Wopukutidwa/Zokhazikika
Mtundu wa Doping	Osasunthika, Te-doped (N), Ge-doped (P)	Osasunthika, Te-doped (N), Ge-doped (P)
Kuwongolera	100, 111	100, 111
Phukusi	Wokwatiwa	Wokwatiwa
Epi-Okonzeka	Inde	Inde

Ma Parameter Amagetsi a Te Doped (N-Type):

KuyendaKukula: 2000-5000 cm²/V·s
Kukaniza: (1-1000) Ω·cm
EPD (Defect Density): ≤2000 zolakwika / cm²

Zoyendera Zamagetsi za Ge Doped (P-Type):

KuyendaKutalika: 4000-8000cm²/V·s
Kukaniza: (0.5-5) Ω·cm

EPD (Defect Density): ≤2000 zolakwika / cm²

Q&A (Mafunso Ofunsidwa Kawirikawiri)

Q1: Ndi mtundu wanji wa doping womwe umagwiritsidwa ntchito pozindikira ma infrared?

A1:Te-doped (N-mtundu)zowotcherera nthawi zambiri ndi njira yabwino yodziwira ma infrared, popeza amapereka ma elekitironi apamwamba kwambiri komanso magwiridwe antchito apamwamba pa zowunikira zapakati pa wavelength infrared (MWIR) ndi makina oyerekeza.

Q2: Kodi ndingagwiritse ntchito mawafawa pamagetsi othamanga kwambiri?

A2: Inde, zowotcha za InSb, makamaka zomwe zili ndiN-mtundu wa dopingndi100 orientation, ndi oyenererana ndi zida zamagetsi zothamanga kwambiri monga ma transistors, zida za quantum well, ndi zida za optoelectronic chifukwa chakuyenda kwawo kwa electron.

Q3: Kodi pali kusiyana kotani pakati pa 100 ndi 111 zotengera za InSb?

A3: ndi100orientation imakonda kugwiritsidwa ntchito pazida zomwe zimafuna kuthamanga kwambiri pamagetsi, pomwe ma111kuyang'ana nthawi zambiri kumagwiritsidwa ntchito pazinthu zinazake zomwe zimafuna mawonekedwe osiyanasiyana amagetsi kapena kuwala, kuphatikiza zida zina za optoelectronic ndi masensa.

Q4: Kodi tanthauzo la gawo la Epi-Ready pazakudya za InSb ndi chiyani?

A4: ndiEpi-Okonzekamawonekedwe amatanthawuza kuti chophikacho chidakonzedweratu chifukwa cha njira za epitaxial deposition. Izi ndizofunikira pamapulogalamu omwe amafunikira kukula kwa zigawo zowonjezera pamwamba pa chowotcha, monga kupanga zida zapamwamba za semiconductor kapena optoelectronic.

Q5: Kodi ma wafers a InSb ndi otani paukadaulo wa infuraredi?

A5: Zowotcha za InSb zimagwiritsidwa ntchito makamaka pakuzindikira kwa infrared, kujambula kwamafuta, makina owonera usiku, ndi matekinoloje ena owonera ma infrared. Kumverera kwawo kwakukulu ndi phokoso lochepa zimawapangitsa kukhala abwinoMid-wavelength infrared (MWIR)zodziwira.

Q6: Kodi makulidwe a mkatewo amakhudza bwanji magwiridwe ake?

A6: Makulidwe a chowotchacho chimakhala ndi gawo lofunikira pakukhazikika kwake kwamakina ndi mawonekedwe amagetsi. Zophika zopyapyala nthawi zambiri zimagwiritsidwa ntchito ngati tcheru kwambiri komwe kumafunikira kuwongolera moyenera zinthu zakuthupi, pomwe zopatulira zokhuthala zimapereka kulimba kwazinthu zina zamafakitale.

Q7: Kodi ndimasankha bwanji kukula koyenera kwa kabati kogwiritsa ntchito?

A7: Kukula koyenera kwa mkate kumatengera chipangizo kapena makina omwe apangidwa. Zowotcherera zing'onozing'ono (2-inchi) zimagwiritsidwa ntchito pofufuza komanso pazigawo zing'onozing'ono, pomwe zowotcha zazikulu (mainchi 3) zimagwiritsidwa ntchito popanga zambiri komanso zida zazikulu zomwe zimafuna zinthu zambiri.

Mapeto

InSb zowotcha mkati2-inchindi3-inchisaizi, ndiosasinthidwa, N-mtundu,ndiP-mtundukusiyanasiyana, ndizofunika kwambiri pakugwiritsa ntchito semiconductor ndi optoelectronic, makamaka pamakina ozindikira ma infrared. The100ndi111machitidwe amapereka kusinthasintha kwa zosowa zosiyanasiyana zaumisiri, kuchokera kumagetsi othamanga kwambiri kupita ku makina oyerekeza a infrared. Ndi kuyenda kwawo kwapadera kwa ma elekitironi, phokoso lochepa, komanso mawonekedwe ake enieni, zophika izi ndizoyenerazowunikira zapakati pa wavelength infraredndi ntchito zina zapamwamba.