Indium Antimonide (InSb) zopyapyala N mtundu P mtundu Epi wokonzeka undoped Te doped kapena Ge doped 2inch 3inch 4inch makulidwe Indium Antimonide (InSb) zopyapyala
Mawonekedwe
Zosankha za Doping:
1. Zosinthidwa:Zophika izi ndizopanda ma doping agents, zomwe zimawapangitsa kukhala abwino kwa mapulogalamu apadera monga kukula kwa epitaxial.
2.Te Doped (N-Type):Tellurium (Te) doping nthawi zambiri amagwiritsidwa ntchito popanga zowotcha zamtundu wa N, zomwe ndi zabwino kugwiritsa ntchito monga zowunikira ma infrared ndi zamagetsi zothamanga kwambiri.
3.Ge Doped (P-Type):Doping ya Germanium (Ge) imagwiritsidwa ntchito popanga zowotcha zamtundu wa P, zomwe zimapereka kuyenda kwa mabowo apamwamba pamapulogalamu apamwamba a semiconductor.
Zosankha Zakukula:
1.Available mu 2-inchi, 3-inchi, ndi 4-inchi diameters. Zophika izi zimakwaniritsa zosowa zosiyanasiyana zaukadaulo, kuyambira pakufufuza ndi chitukuko mpaka kupanga zazikulu.
2.Kulekerera kwapakati kwapakati kumatsimikizira kugwirizana pakati pa magulu, ndi ma diameter a 50.8±0.3mm (kwa 2-inch wafers) ndi 76.2±0.3mm (kwa 3-inch wafers).
Kuwongolera Makulidwe:
1.The wafers zilipo ndi makulidwe a 500±5μm ntchito mulingo woyenera mu ntchito zosiyanasiyana.
2.Zowonjezera zowonjezera monga TTV (Total Thickness Variation), BOW, ndi Warp zimayendetsedwa mosamala kuti zitsimikizire kufanana kwakukulu ndi khalidwe.
Ubwino wa Pamwamba:
1.Mawotchiwa amabwera ndi malo opukutidwa / okhomedwa kuti apititse patsogolo kuwala ndi magetsi.
2.Mawonekedwewa ndi abwino kwa kukula kwa epitaxial, kupereka maziko osalala kuti apitirize kukonzanso mu zipangizo zamakono.
Epi-Ready:
1.Mawotchi a InSb ali okonzeka epi, kutanthauza kuti amathandizidwa kale ndi njira za epitaxial deposition. Izi zimawapangitsa kukhala abwino kwa ntchito zopanga semiconductor komwe zigawo za epitaxial ziyenera kukulitsidwa pamwamba pa chofufumitsa.
Mapulogalamu
1. Zodziwikiratu:Zowotcha za InSb zimagwiritsidwa ntchito kwambiri pozindikira za infrared (IR), makamaka pakati pa wavelength infrared (MWIR). Zophika izi ndizofunikira pakuwona usiku, kujambula kwamafuta, komanso kugwiritsa ntchito ma infrared spectroscopy.
2.Zamagetsi Zothamanga Kwambiri:Chifukwa chakuyenda kwawo kwa ma elekitironi apamwamba, zowotcha za InSb zimagwiritsidwa ntchito pazida zamagetsi zothamanga kwambiri monga ma transistors othamanga kwambiri, zida zachitsime cha quantum, ndi ma transistors apamwamba kwambiri a electron mobility (HEMTs).
3.Quantum Well Devices:Bandgap yopapatiza komanso kuyenda bwino kwa ma elekitironi kumapangitsa zowotcha za InSb kukhala zoyenera kugwiritsidwa ntchito pazida zachitsime cha quantum. Zipangizozi ndizofunika kwambiri mu ma lasers, zowunikira, ndi makina ena optoelectronic.
4.Spintronic Devices:InSb ikufufuzidwanso mu mapulogalamu a spintronic, pomwe ma electron spin amagwiritsidwa ntchito pokonza zidziwitso. Kulumikizana kwapang'onopang'ono kwazinthuzi kumapangitsa kukhala koyenera kwa zida zogwira ntchito kwambiri izi.
5.Terahertz (THz) Kugwiritsa Ntchito Ma Radiation:Zipangizo zochokera ku InSb zimagwiritsidwa ntchito popanga ma radiation a THz, kuphatikiza kafukufuku wasayansi, kujambula, ndi mawonekedwe azinthu. Amathandizira matekinoloje apamwamba monga THz spectroscopy ndi THz imaging system.
6. Thermoelectric Devices:Makhalidwe apadera a InSb amapangitsa kuti ikhale chinthu chowoneka bwino pakugwiritsa ntchito ma thermoelectric, komwe imatha kugwiritsidwa ntchito kusinthira kutentha kukhala magetsi moyenera, makamaka pakugwiritsa ntchito niche monga ukadaulo wamlengalenga kapena kupanga magetsi m'malo ovuta kwambiri.
Product Parameters
| Parameter | 2-inchi | 3-inchi | 4-inchi |
| Diameter | 50.8±0.3mm | 76.2 ± 0.3mm | - |
| Makulidwe | 500±5μm | 650±5μm | - |
| Pamwamba | Wopukutidwa/Zokhazikika | Wopukutidwa/Zokhazikika | Wopukutidwa/Zokhazikika |
| Mtundu wa Doping | Osasunthika, Te-doped (N), Ge-doped (P) | Osasunthika, Te-doped (N), Ge-doped (P) | Osasunthika, Te-doped (N), Ge-doped (P) |
| Kuwongolera | (100) | (100) | (100) |
| Phukusi | Wokwatiwa | Wokwatiwa | Wokwatiwa |
| Epi-Okonzeka | Inde | Inde | Inde |
Zoyendera Zamagetsi za Te Doped (N-Type):
- KuyendaKukula: 2000-5000 cm²/V·s
- Kukaniza: (1-1000) Ω·cm
- EPD (Defect Density): ≤2000 zolakwika / cm²
Zoyendera Zamagetsi za Ge Doped (P-Type):
- KuyendaKutalika: 4000-8000cm²/V·s
- Kukaniza: (0.5-5) Ω·cm
- EPD (Defect Density): ≤2000 zolakwika / cm²
Mapeto
Zowotcha za Indium Antimonide (InSb) ndizofunikira kwambiri pamagwiritsidwe osiyanasiyana amagetsi, ma optoelectronics, ndi ukadaulo wa infrared. Ndi kayendedwe kabwino ka ma elekitironi, kulumikiza kozungulira kocheperako, komanso njira zingapo zopangira doping (Te for N-type, Ge for P-type), zowotcha za InSb ndizoyenera kugwiritsidwa ntchito pazida monga zowunikira ma infrared, ma transistors othamanga kwambiri, zida zachitsime cha quantum, ndi zida za spintronic.
Zophikazo zimapezeka mumitundu yosiyanasiyana (2-inchi, 3-inchi, ndi 4-inchi), zowongolera ndendende komanso malo okonzeka epi, kuwonetsetsa kuti akukwaniritsa zofunikira zaukadaulo wamakono wa semiconductor. Zophika izi ndizoyenera kugwiritsidwa ntchito m'magawo monga kuzindikira kwa IR, zida zamagetsi zothamanga kwambiri, ndi ma radiation a THz, zomwe zimathandiza ukadaulo wapamwamba pakufufuza, mafakitale, ndi chitetezo.
Chithunzi chatsatanetsatane
