Ma wafer a Indium Antimonide (InSb) Mtundu wa N mtundu wa P Epi wokonzeka kusinthidwa Te doped kapena Ge doped 2inch 3inch 4inch makulidwe Indium Antimonide (InSb) ma wafer
Mawonekedwe
Zosankha Zogwiritsa Ntchito Doping:
1. Yosasinthidwa:Ma wafer awa alibe mankhwala aliwonse oletsa kugwiritsa ntchito mankhwala osokoneza bongo, zomwe zimapangitsa kuti akhale abwino kwambiri pa ntchito zapadera monga kukula kwa epitaxial.
2.Te Doped (N-Type):Kugwiritsa ntchito mankhwala osokoneza bongo a Tellurium (Te) nthawi zambiri kumagwiritsidwa ntchito popanga ma wafer amtundu wa N, omwe ndi abwino kwambiri pakugwiritsa ntchito monga zida zowunikira za infrared ndi zamagetsi othamanga kwambiri.
3. Ge Doped (P-Type):Kugwiritsa ntchito mankhwala osokoneza bongo a Germanium (Ge) kumagwiritsidwa ntchito popanga ma wafer amtundu wa P, zomwe zimapangitsa kuti pakhale kuyenda kwa mabowo okwera kwambiri kuti agwiritsidwe ntchito pa semiconductor yapamwamba.
Zosankha za Kukula:
1. Ikupezeka mu mainchesi awiri, mainchesi atatu, ndi mainchesi anayi. Ma wafer awa amakwaniritsa zosowa zosiyanasiyana zaukadaulo, kuyambira kafukufuku ndi chitukuko mpaka kupanga zinthu zazikulu.
2. Kulekerera kwa dayamita molondola kumaonetsetsa kuti zinthu zikugwirizana m'magulu onse, ndi dayamita ya 50.8±0.3mm (ya ma wafer a mainchesi 2) ndi 76.2±0.3mm (ya ma wafer a mainchesi 3).
Kulamulira Kukhuthala:
1. Ma wafers amapezeka ndi makulidwe a 500±5μm kuti agwire bwino ntchito zosiyanasiyana.
2. Miyeso yowonjezera monga TTV (Total Thickness Variation), BOW, ndi Warp imayendetsedwa mosamala kuti zitsimikizire kuti zimagwirizana bwino komanso kuti ndi zapamwamba.
Ubwino Wapamwamba:
1. Ma wafer amabwera ndi malo opukutidwa/odulidwa kuti agwire bwino ntchito yamagetsi komanso yowunikira.
2. Malo awa ndi abwino kwambiri pakukula kwa epitaxial, zomwe zimapangitsa kuti zikhale zosavuta kugwiritsa ntchito zipangizo zamakono.
Yokonzeka Kuphika:
1. Ma wafer a InSb ndi okonzeka kugwiritsidwa ntchito, zomwe zikutanthauza kuti amakonzedwa kale kuti agwiritsidwe ntchito poika zinthu m'ma epitaxial. Izi zimapangitsa kuti akhale abwino kwambiri popanga zinthu za semiconductor komwe zigawo za epitaxial ziyenera kulimidwa pamwamba pa wafer.
Mapulogalamu
1. Zowunikira za infrared:Ma wafer a InSb amagwiritsidwa ntchito kwambiri pozindikira ma infrared (IR), makamaka mu infrared ya mid-wavelength (MWIR). Ma wafer amenewa ndi ofunikira kwambiri pakuwona usiku, kujambula kutentha, komanso kugwiritsa ntchito ma infrared spectroscopy.
2. Zamagetsi Zachangu Kwambiri:Chifukwa cha kuyenda kwawo kwa ma electron ambiri, ma wafer a InSb amagwiritsidwa ntchito mu zipangizo zamagetsi zothamanga kwambiri monga ma transistors a high-frequency, zipangizo za quantum well, ndi ma transistors a high-electron mobility (HEMTs).
3. Zipangizo za Chitsime cha Quantum:Kuchepa kwa bandgap ndi kuyenda bwino kwa ma elekitironi kumapangitsa ma wafer a InSb kukhala oyenera kugwiritsidwa ntchito muzipangizo za quantum well. Zipangizozi ndi zofunika kwambiri mu ma laser, ma detector, ndi machitidwe ena a optoelectronic.
4. Zipangizo za Spintronic:InSb ikufufuzidwanso mu ntchito za spintronic, komwe electron spin imagwiritsidwa ntchito pokonza chidziwitso. Kulumikizana kwa zinthuzi ndi spin-orbit yochepa kumapangitsa kuti zikhale zoyenera kugwiritsa ntchito zipangizozi zogwira ntchito bwino.
5. Kugwiritsa Ntchito Ma Radiation a Terahertz (THz):Zipangizo zochokera ku InSb zimagwiritsidwa ntchito mu ntchito za THz radiation, kuphatikizapo kafukufuku wa sayansi, kujambula zithunzi, ndi kufotokozera zinthu. Zimathandizira ukadaulo wapamwamba monga THz spectroscopy ndi THz imaging systems.
6. Zipangizo Zotenthetsera:Kapangidwe kapadera ka InSb kamapangitsa kuti ikhale chinthu chokongola kwambiri pakugwiritsa ntchito magetsi, komwe ingagwiritsidwe ntchito kusintha kutentha kukhala magetsi bwino, makamaka m'malo ogwiritsira ntchito zinthu monga ukadaulo wamlengalenga kapena kupanga magetsi m'malo ovuta kwambiri.
Magawo a Zamalonda
| Chizindikiro | Mainchesi awiri | Mainchesi atatu | Mainchesi 4 |
| M'mimba mwake | 50.8±0.3mm | 76.2±0.3mm | - |
| Kukhuthala | 500±5μm | 650±5μm | - |
| Pamwamba | Yopukutidwa/Yokokedwa | Yopukutidwa/Yokokedwa | Yopukutidwa/Yokokedwa |
| Mtundu wa Doping | Wosadulidwa, Wopopera Te (N), Wopopera Ge (P) | Wosadulidwa, Wopopera Te (N), Wopopera Ge (P) | Wosadulidwa, Wopopera Te (N), Wopopera Ge (P) |
| Kuyang'ana | (100) | (100) | (100) |
| Phukusi | Wosakwatiwa | Wosakwatiwa | Wosakwatiwa |
| Wokonzeka Kuphika | Inde | Inde | Inde |
Magawo amagetsi a Te Doped (N-Type):
- Kuyenda: 2000-5000 cm²/V·s
- Kusakhazikika: (1-1000) Ω·cm
- EPD (Kuchuluka Kwachilema): ≤2000 zolakwika/cm²
Magawo amagetsi a Ge Doped (P-Type):
- Kuyenda: 4000-8000 cm²/V·s
- Kusakhazikika: (0.5-5) Ω·cm
- EPD (Kuchuluka Kwachilema): ≤2000 zolakwika/cm²
Mapeto
Ma wafer a Indium Antimonide (InSb) ndi ofunikira kwambiri pa ntchito zosiyanasiyana zamagetsi, ma optoelectronics, ndi ukadaulo wa infrared. Ndi kuyenda kwawo kwabwino kwa ma electron, kulumikizana kozungulira pang'ono, komanso njira zosiyanasiyana zopangira doping (Te ya mtundu wa N, Ge ya mtundu wa P), ma wafer a InSb ndi abwino kwambiri kugwiritsidwa ntchito pazida monga ma infrared detectors, ma transistors othamanga kwambiri, zida za quantum well, ndi zida za spintronic.
Ma wafer awa amapezeka m'makulidwe osiyanasiyana (ma inchi awiri, mainchesi atatu, ndi mainchesi anayi), okhala ndi makulidwe oyenera komanso malo okonzeka kugwiritsidwa ntchito, kuonetsetsa kuti akukwaniritsa zofunikira kwambiri pakupanga ma semiconductor amakono. Ma wafer awa ndi abwino kwambiri kugwiritsidwa ntchito m'magawo monga kuzindikira IR, zamagetsi othamanga kwambiri, ndi kuwala kwa THz, zomwe zimathandiza ukadaulo wapamwamba mu kafukufuku, mafakitale, ndi chitetezo.
Chithunzi Chatsatanetsatane
