HPSI SiCOI wafer 4 6inch Hydropholic Bonding

Chithunzi Chojambulidwa cha HPSI SiCOI chopangidwa ndi Hydropholic Bonding cha mainchesi 4 ndi 6

Kufotokozera Kwachidule:

Ma wafer a High-purity semi-insulating (HPSI) 4H-SiCOI amapangidwa pogwiritsa ntchito ukadaulo wapamwamba wogwirizanitsa ndi kuonda. Ma wafer amapangidwa ndi ma bonding 4H HPSI silicon carbide substrates pa thermal oxide layers kudzera m'njira ziwiri zazikulu: hydrophilic (direct) bonding ndi surface activated bonding. Chomalizachi chimayambitsa gawo losinthidwa lapakati (monga amorphous silicon, aluminium oxide, kapena titanium oxide) kuti liwongolere ubwino wa bond ndikuchepetsa thovu, makamaka loyenera kugwiritsa ntchito kuwala. Kulamulira makulidwe a silicon carbide layer kumachitika kudzera mu ion implantation-based SmartCut kapena grinding ndi CMP polishing processes. SmartCut imapereka uniformity yolondola kwambiri (50nm–900nm yokhala ndi ±20nm uniformity) koma ingayambitse kuwonongeka pang'ono kwa kristalo chifukwa cha ion implantation, zomwe zimakhudza magwiridwe antchito a chipangizo cha kuwala. Kupera ndi CMP polishing kumapewa kuwonongeka kwa zinthu ndipo kumakondedwa ndi mafilimu okhuthala (350nm–500µm) ndi quantum kapena PIC applications, ngakhale kuti ndi uniformity yochepa (±100nm). Ma wafers okhazikika a mainchesi 6 ali ndi wosanjikiza wa SiC wa 1µm ±0.1µm pa wosanjikiza wa SiO2 wa 3µm pamwamba pa ma substrates a Si 675µm okhala ndi kusalala kwapadera pamwamba (Rq < 0.2nm). Ma wafers awa a HPSI SiCOI amagwirira ntchito popanga zida za MEMS, PIC, quantum, ndi optical okhala ndi khalidwe labwino kwambiri la zinthu komanso kusinthasintha kwa njira.

Tumizani imelo kwa ife

Mawonekedwe

Chidule cha Katundu wa SiCOI Wafer (Silicon Carbide-on-Insulator)

Ma wafer a SiCOI ndi gawo latsopano la semiconductor substrate lomwe limaphatikiza Silicon Carbide (SiC) ndi chotetezera kutentha, nthawi zambiri SiO₂ kapena safiro, kuti liwongolere magwiridwe antchito amagetsi amphamvu, RF, ndi photonics. Pansipa pali chidule chatsatanetsatane cha makhalidwe awo omwe agawidwa m'magawo ofunikira:

Katundu	Kufotokozera
Kapangidwe ka Zinthu	Chigawo cha Silicon Carbide (SiC) cholumikizidwa pa chotetezera kutentha (nthawi zambiri SiO₂ kapena safiro)
Kapangidwe ka Crystal	Kawirikawiri ma polytype a SiC a 4H kapena 6H, amadziwika ndi khalidwe lapamwamba la kristalo komanso kufanana kwake.
Katundu Wamagetsi	Mphamvu yamagetsi yotsika kwambiri (~3 MV/cm), bandgap yayikulu (~3.26 eV ya 4H-SiC), mphamvu yotsika yotulutsa madzi
Kutentha kwa Matenthedwe	Kutentha kwambiri (~300 W/m·K), zomwe zimathandiza kuti kutentha kusamayende bwino
Gawo la Dielectric	Chotchingira kutentha (SiO₂ kapena safiro) chimapereka magetsi olekanitsa ndipo chimachepetsa mphamvu ya tizilombo toyambitsa matenda
Katundu wa Makina	Kulimba kwambiri (~ 9 Mohs sikelo), mphamvu yabwino kwambiri yamakina, komanso kukhazikika kwa kutentha
Kumaliza Pamwamba	Kawirikawiri imakhala yosalala kwambiri komanso yopanda chilema, yoyenera kupanga chipangizocho
Mapulogalamu	Zipangizo zamagetsi zamagetsi, zida za MEMS, zida za RF, masensa omwe amafuna kutentha kwambiri komanso kulekerera magetsi

Ma wafer a SiCOI (Silicon Carbide-on-Insulator) ndi kapangidwe kapamwamba ka semiconductor substrate, komwe kali ndi wosanjikiza woonda kwambiri wa silicon carbide (SiC) wolumikizidwa pa wosanjikiza woteteza kutentha, nthawi zambiri silicon dioxide (SiO₂) kapena safiro. Silicon carbide ndi semiconductor yokhala ndi bandgap yayikulu yomwe imadziwika chifukwa cha kuthekera kwake kupirira ma voltages okwera komanso kutentha kwakukulu, komanso kutentha kwambiri komanso kuuma kwa makina apamwamba, zomwe zimapangitsa kuti ikhale yoyenera kugwiritsa ntchito zamagetsi amphamvu kwambiri, ma frequency apamwamba, komanso kutentha kwambiri.

Chitsulo choteteza kutentha mu ma wafer a SiCOI chimapereka mphamvu yothandiza yopatulira magetsi, kuchepetsa kwambiri mphamvu ya parasitic ndi mafunde otuluka pakati pa zipangizo, motero kumawonjezera magwiridwe antchito ndi kudalirika kwa chipangizo chonse. Malo osungiramo madzi amapukutidwa bwino kuti akhale osalala kwambiri popanda zolakwika zambiri, kukwaniritsa zofunikira zolimba za kapangidwe ka zipangizo zazing'ono komanso zazing'ono.

Kapangidwe ka zinthuzi sikuti kamangowonjezera mphamvu zamagetsi a zipangizo za SiC komanso kumawonjezera kwambiri kayendetsedwe ka kutentha ndi kukhazikika kwa makina. Zotsatira zake, ma wafer a SiCOI amagwiritsidwa ntchito kwambiri mu zamagetsi amphamvu, zida zama radio frequency (RF), masensa a microelectromechanical systems (MEMS), ndi zamagetsi otentha kwambiri. Ponseponse, ma wafer a SiCOI amaphatikiza mawonekedwe apadera a silicon carbide ndi maubwino odzipatula amagetsi a insulator layer, zomwe zimapereka maziko abwino a mbadwo wotsatira wa zida zama semiconductor zogwira ntchito kwambiri.

Kugwiritsa ntchito kwa SiCOI wafer

Zipangizo Zamagetsi Zamagetsi

Ma switch amphamvu kwambiri, ma MOSFET, ndi ma diode

Pindulani ndi kusiyana kwakukulu kwa SiC, magetsi ambiri owonongeka, komanso kukhazikika kwa kutentha

Kuchepa kwa kutayika kwa magetsi komanso kugwira ntchito bwino kwa makina osinthira magetsi

Zigawo za Ma Radio Frequency (RF)

Ma transistors ndi ma amplifier amphamvu kwambiri

Mphamvu yochepa ya parasitic chifukwa cha insulating layer imathandizira magwiridwe antchito a RF

Yoyenera kulumikizana ndi 5G ndi makina a radar

Machitidwe a Microelectromechanical (MEMS)

Masensa ndi ma actuator omwe amagwira ntchito m'malo ovuta

Kulimba kwa makina ndi kusakhalapo kwa mankhwala kumawonjezera moyo wa chipangizocho

Zimaphatikizapo masensa othamanga, ma accelerometer, ndi ma gyroscope

Zamagetsi Zotentha Kwambiri

Zamagetsi zamagetsi zamagalimoto, ndege, ndi mafakitale

Gwiritsani ntchito moyenera kutentha kwambiri komwe silikoni sikugwira ntchito

Zipangizo za Photonic

Kuphatikiza ndi zida zamagetsi pazida zosungiramo zinthu zosungiramo zinthu

Imathandizira ma photonics a pa chip ndi kasamalidwe kabwino ka kutentha

Mafunso ndi Mayankho a SiCOI wafer

Q:Kodi chidebe cha SiCOI ndi chiyani

A:SiCOI wafer imayimira Silicon Carbide-on-Insulator wafer. Ndi mtundu wa semiconductor substrate komwe wosanjikiza woonda wa silicon carbide (SiC) umalumikizidwa pa wosanjikiza woteteza, nthawi zambiri silicon dioxide (SiO₂) kapena nthawi zina safiro. Kapangidwe kameneka kamafanana ndi ma wafer odziwika bwino a Silicon-on-Insulator (SOI) koma amagwiritsa ntchito SiC m'malo mwa silicon.