HPSI SiCOI wafer 4 6inch Hydropholic Bonding

Kufotokozera Kwachidule:

Zowotcha za High-purity semi-insulating (HPSI) 4H-SiCOI zimapangidwa pogwiritsa ntchito matekinoloje apamwamba omangira ndi kupatulira. Zophikazo zimapangidwa pomangirira magawo a 4H HPSI silicon carbide pazigawo zotentha za okusayidi kudzera m'njira ziwiri zazikulu: hydrophilic (molunjika) kulumikiza ndi kulumikiza pamwamba. Chotsatiracho chimayambitsa wosanjikiza wapakatikati (monga amorphous silicon, aluminium okusayidi, kapena titaniyamu okusayidi) kuti apititse patsogolo khalidwe la mgwirizano ndi kuchepetsa thovu, makamaka loyenera kugwiritsira ntchito kuwala. Kuwongolera makulidwe a silicon carbide wosanjikiza kumatheka kudzera mu ion implantation-based SmartCut kapena kugaya ndi CMP kupukuta. SmartCut imapereka makulidwe olondola kwambiri (50nm-900nm okhala ndi ± 20nm ofanana) koma angayambitse kuwonongeka pang'ono kwa kristalo chifukwa cha kuyika kwa ayoni, zomwe zimakhudza magwiridwe antchito a chipangizocho. Kupera ndi kupukuta kwa CMP kumapewa kuwonongeka kwa zinthu ndipo kumakonda mafilimu okhuthala (350nm–500µm) ndi quantum kapena PIC applications, ngakhale zokhala ndi makulidwe ochepa (±100nm). Zophika zophika zokhala ndi mainchesi 6 zimakhala ndi 1µm ±0.1µm SiC wosanjikiza pa 3µm SiO2 wosanjikiza pamwamba pa 675µm Si ma substrates okhala ndi kusalala kwapadera (Rq <0.2nm). Zophika za HPSI SiCOI izi zimathandizira MEMS, PIC, quantum, ndi zida zowoneka bwino zokhala ndi zinthu zabwino kwambiri komanso kusinthasintha kwazinthu.

Titumizireni imelo

Mawonekedwe

SiCOI Wafer (Silicon Carbide-on-Insulator) Chidule cha Katundu

SiCOI wafers ndi gawo latsopano la semiconductor lophatikiza Silicon Carbide (SiC) yokhala ndi insulating layer, nthawi zambiri SiO₂ kapena safiro, kuti apititse patsogolo magwiridwe antchito amagetsi amagetsi, RF, ndi zithunzi. Pansipa pali chithunzithunzi chatsatanetsatane cha katundu wawo wogawidwa m'magawo ofunikira:

Katundu	Kufotokozera
Mapangidwe Azinthu	Silicon Carbide (SiC) wosanjikiza womangidwa pagawo lotchingira (nthawi zambiri SiO₂ kapena safiro)
Kapangidwe ka Crystal	Kawirikawiri 4H kapena 6H polytypes ya SiC, yomwe imadziwika ndi khalidwe lapamwamba la kristalo ndi zofanana
Zida Zamagetsi	Malo amagetsi osweka kwambiri (~ 3 MV/cm), bandgap yotakata (~3.26 eV ya 4H-SiC), kutayikira kochepa kwapano
Thermal Conductivity	Kutentha kwapamwamba (~ 300 W/m·K), kumapangitsa kuti kutentha kutheke bwino
Dielectric Layer	Kutsekereza wosanjikiza (SiO₂ kapena safiro) kumapereka kudzipatula kwamagetsi ndikuchepetsa mphamvu ya parasitic
Mechanical Properties	Kulimba kwakukulu (~ 9 Mohs sikelo), mphamvu zamakina abwino kwambiri, komanso kukhazikika kwamafuta
Pamwamba Pamwamba	Nthawi zambiri, yosalala kwambiri yokhala ndi kachulukidwe kakang'ono, koyenera kupanga zida
Mapulogalamu	Zamagetsi zamagetsi, zida za MEMS, zida za RF, masensa omwe amafunikira kutentha kwambiri komanso kulekerera kwamagetsi

Zophika za SiCOI (Silicon Carbide-on-Insulator) zimayimira gawo lapamwamba la semiconductor gawo lapansi, lopangidwa ndi silicon carbide (SiC) yapamwamba kwambiri yomangika pansanjika yoteteza, nthawi zambiri silicon dioxide (SiO₂) kapena safiro. Silicon carbide ndi wide-bandgap semiconductor yomwe imadziwika kuti imatha kupirira ma voltages apamwamba komanso kutentha kokwera, komanso kukhathamiritsa kwamafuta kwambiri komanso kuuma kwa makina apamwamba kwambiri, zomwe zimapangitsa kuti ikhale yabwino pamagetsi apamwamba kwambiri, ma frequency apamwamba, komanso kutentha kwambiri.

Wosanjikiza wotsekera mu ma wafers a SiCOI amapereka kudzipatula kwamagetsi kothandiza, kumachepetsa kwambiri mphamvu ya parasitic ndi kutayikira kwa mafunde pakati pa zida, potero kumathandizira magwiridwe antchito onse ndi kudalirika kwa chipangizocho. Pamwamba pake amapukutidwa ndendende kuti azitha kufewa kwambiri komanso opanda zilema zochepa, kukwaniritsa zofunikira zakupanga zida zazing'ono ndi nano-scale.

Kapangidwe kazinthu izi sikuti kumangowonjezera mawonekedwe amagetsi a zida za SiC komanso kumathandizira kwambiri kasamalidwe kamafuta komanso kukhazikika kwamakina. Zotsatira zake, zowotcha za SiCOI zimagwiritsidwa ntchito kwambiri pamagetsi amagetsi, zigawo za ma radio frequency (RF), masensa a microelectromechanical systems (MEMS), ndi zamagetsi zotentha kwambiri. Ponseponse, zowotcha za SiCOI zimaphatikiza mawonekedwe apadera a silicon carbide ndi mapindu odzipatula amagetsi a insulator wosanjikiza, zomwe zimapatsa maziko abwino am'badwo wotsatira wa zida za semiconductor zogwira ntchito kwambiri.

Ntchito ya SiCOI wafer

Zida Zamagetsi Zamagetsi

Ma switch amphamvu kwambiri komanso amphamvu kwambiri, ma MOSFET, ndi ma diode

Pindulani ndi SiC's wide bandgap, high breakdown voltage, and thermal bata

Kuchepetsa mphamvu zamagetsi ndikuwongolera magwiridwe antchito pamakina osinthira mphamvu

Zigawo za Radio Frequency (RF).

Ma transistors apamwamba kwambiri ndi amplifiers

Kuchepa kwa parasitic capacitance chifukwa cha insulating layer kumawonjezera magwiridwe antchito a RF

Zoyenera kulumikizana ndi 5G ndi makina a radar

Microelectromechanical Systems (MEMS)

Masensa ndi ma actuators omwe amagwira ntchito m'malo ovuta

Kulimba kwamakina ndi kusakhazikika kwamankhwala kumakulitsa moyo wa chipangizocho

Mulinso masensa othamanga, ma accelerometers, ndi ma gyroscopes

Zida Zamagetsi Zotentha Kwambiri

Zamagetsi zamagalimoto, zakuthambo, ndi ntchito zamafakitale

Gwirani ntchito modalirika pamatenthedwe okwera pomwe silicon imalephera

Zida Zojambula

Kuphatikiza ndi zida za optoelectronic pamagawo a insulator

Imayatsa pa-chip photonics ndi kasamalidwe kabwino kakutentha

Q&A ya SiCOI wafer

Q:Kodi mkate wa SiCOI ndi chiyani

A:SiCOI wafer imayimira Silicon Carbide-on-Insulator wafer. Ndi mtundu wa gawo lapansi la semiconductor pomwe gawo laling'ono la silicon carbide (SiC) limamangiriridwa pagawo loteteza, nthawi zambiri silicon dioxide (SiO₂) kapena nthawi zina safiro. Kapangidwe kameneka ndi kofanana ndi kaphatikizidwe kodziwika bwino ka Silicon-on-Insulator (SOI) koma amagwiritsa ntchito SiC m'malo mwa silicon.