Gallium Nitride pa Silicon wafer 4inch 6inch Tailored Si Substrate Orientation, Resistivity, ndi N-type/P-type Options
Mawonekedwe
● Wide Bandgap:GaN (3.4 eV) imapereka kusintha kwakukulu pakuchita pafupipafupi, mphamvu zambiri, komanso kutentha kwambiri poyerekeza ndi silicon yachikhalidwe, zomwe zimapangitsa kuti zikhale zoyenera pazida zamagetsi ndi zokulitsa za RF.
●Makonda Si Substrate Orientation:Sankhani kuchokera kumagawo osiyanasiyana a Si substrate monga <111>, <100>, ndi ena kuti agwirizane ndi zofunikira pazida.
●Kukaniza Mwamakonda:Sankhani pakati pa mitundu yosiyanasiyana ya resistivity ya Si, kuchokera ku semi-insulating kupita ku high-resistivity ndi low-resistivity kuti mukwaniritse bwino ntchito ya chipangizo.
● Mtundu wa Doping:Amapezeka mu mtundu wa N kapena P-mtundu wa doping kuti agwirizane ndi zofunikira za zida zamagetsi, ma transistors a RF, kapena ma LED.
● Mphamvu Yamagetsi Yambiri:Ma wafers a GaN-on-Si ali ndi mphamvu zowononga kwambiri (mpaka 1200V), zomwe zimawathandiza kuti azigwira ntchito zamagetsi apamwamba.
●Kuthamanga Kwachangu:GaN ili ndi kuyenda kwa ma elekitironi apamwamba komanso kutayika kocheperako kuposa silicon, kupangitsa kuti zowotcha za GaN-on-Si zikhale zabwino pamabwalo othamanga kwambiri.
●Kugwira Ntchito Kwambiri kwa Thermal:Ngakhale kutsika kwamafuta a silicon, GaN-on-Si imaperekabe kukhazikika kwapamwamba kwamafuta, ndikutulutsa kwabwinoko kutentha kuposa zida zachikhalidwe za silicon.
Mfundo Zaukadaulo
| Parameter | Mtengo |
| Wafer Size | 4 inchi, 6 inchi |
| Ndi Substrate Orientation | <111>, <100>, mwambo |
| Ndi Resistivity | High-resistivity, Semi-insulating, Low-resistivity |
| Mtundu wa Doping | N-mtundu, P-mtundu |
| Makulidwe a GaN Layer | 100nm - 5000nm (customizable) |
| AlGaN Barrier Layer | 24% - 28% Al (wamba 10-20 nm) |
| Kuwonongeka kwa Voltage | 600V - 1200V |
| Electron Mobility | 2000cm²/V·s |
| Kusintha pafupipafupi | Kufikira 18 GHz |
| Wafer Surface Kuyipa | RMS ~ 0.25 nm (AFM) |
| Kutsutsana kwa Mapepala a GaN | 437.9 Ω·cm² |
| Total Wafer Warp | <25µm (pazikulu) |
| Thermal Conductivity | 1.3 - 2.1 W/cm·K |
Mapulogalamu
Zamagetsi Zamagetsi: GaN-on-Si ndi yabwino kwa magetsi amagetsi monga magetsi amplifiers, converters, ndi ma inverters omwe amagwiritsidwa ntchito mumagetsi opangira mphamvu, magalimoto amagetsi (EVs), ndi zipangizo zamakampani. Magetsi ake osweka kwambiri komanso kutsika kwapang'onopang'ono kumatsimikizira kutembenuka kwamphamvu kwamphamvu, ngakhale pamapulogalamu apamwamba kwambiri.
RF ndi Microwave Communications: Ma wafer a GaN-on-Si amapereka mphamvu zothamanga kwambiri, zomwe zimawapangitsa kukhala abwino kwa ma amplifiers amagetsi a RF, ma satellite communications, radar systems, ndi teknoloji ya 5G. Ndi liwiro losinthira kwambiri komanso kuthekera kogwira ntchito pama frequency apamwamba (mpaka18 GHz), zida za GaN zimapereka magwiridwe antchito apamwamba pamapulogalamu awa.
Zamagetsi Zagalimoto: GaN-on-Si imagwiritsidwa ntchito pamakina amagetsi amagetsi, kuphatikizama charger okwera (OBCs)ndiZosintha za DC-DC. Kutha kwake kugwira ntchito pamatenthedwe apamwamba komanso kupirira ma voltages apamwamba kumapangitsa kuti ikhale yoyenera pamagalimoto amagetsi omwe amafunikira kutembenuka kwamphamvu kwamphamvu.
LED ndi Optoelectronics: GaN ndiye zinthu zomwe mungasankhe ma LED a buluu ndi oyera. Ma wafers a GaN-on-Si amagwiritsidwa ntchito kupanga makina owunikira kwambiri a LED, omwe amapereka ntchito zabwino kwambiri pakuwunikira, matekinoloje owonetsera, komanso kulumikizana ndi kuwala.
Q&A
Q1: Ubwino wa GaN ndi chiyani kuposa silicon pazida zamagetsi?
A1:GaN ali ndibandgap (3.4 eV)kuposa silicon (1.1 eV), yomwe imalola kupirira ma voltages apamwamba ndi kutentha. Katunduyu amathandizira GaN kuti azigwira ntchito zamphamvu kwambiri, kuchepetsa kutayika kwa mphamvu ndikuwonjezera magwiridwe antchito. GaN imaperekanso ma liwiro osinthira mwachangu, omwe ndi ofunikira pazida zothamanga kwambiri monga ma amplifiers a RF ndi ma converter amagetsi.
Q2: Kodi ndingasinthe mawonekedwe a Si gawo lapansi kuti ndigwiritse ntchito?
A2:Inde, timaperekacustomizable Si gawo lapansi mayendedwemonga<111>, <100>, ndi zina kutengera zofuna za chipangizo chanu. Mayendedwe a gawo lapansi la Si amakhala ndi gawo lalikulu pakugwira ntchito kwa chipangizocho, kuphatikiza mawonekedwe amagetsi, mawonekedwe amafuta, komanso kukhazikika kwamakina.
Q3: Ndi maubwino otani ogwiritsira ntchito ma wafer a GaN-on-Si pamapulogalamu apamwamba kwambiri?
A3:Zophika za GaN-on-Si zimapereka zabwino kwambirikusintha liwiro, kupangitsa kugwira ntchito mwachangu pama frequency apamwamba poyerekeza ndi silicon. Izi zimawapangitsa kukhala abwino kwaRFndimicrowaventchito, komanso mkulu-mafupipafupizida zamagetsimongaZithunzi za HEMTs(High Electron Mobility Transistors) ndiRF amplifiers. Kusuntha kwa ma elekitironi kwa GaN kumabweretsanso kutayika kocheperako komanso kuwongolera bwino.
Q4: Ndi zosankha ziti za doping zomwe zilipo pamipata ya GaN-on-Si?
A4:Timapereka zonse ziwiriN-mtundundiP-mtunduzosankha za doping, zomwe zimagwiritsidwa ntchito pamitundu yosiyanasiyana ya zida za semiconductor.N-mtundu wa dopingndi abwino kwamphamvu transistorsndiRF amplifiers, pameneP-mtundu wa dopingNthawi zambiri amagwiritsidwa ntchito pazida za optoelectronic ngati ma LED.
Mapeto
Gallium Nitride Yathu Yopangidwa Mwamakonda pa Silicon (GaN-on-Si) Wafers amapereka njira yabwino yogwiritsira ntchito maulendo apamwamba, amphamvu kwambiri, komanso kutentha kwambiri. Ndi mawonekedwe osinthika a Si gawo lapansi, resistivity, ndi N-type/P-type doping, zowotcha izi zimakonzedwa kuti zikwaniritse zosowa za mafakitale kuyambira zamagetsi zamagetsi ndi makina amagalimoto mpaka kulumikizana kwa RF ndi matekinoloje a LED. Pogwiritsa ntchito zinthu zapamwamba za GaN komanso kuchulukira kwa silicon, zowotcha izi zimapereka magwiridwe antchito, magwiridwe antchito, komanso kutsimikizira kwamtsogolo kwa zida zam'badwo wotsatira.
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