Masinthidwe Amtundu wa SiC Seed Crystal Dia 205/203/208 4H-N Mtundu wa Optical Communications

Masinthidwe Mwamakonda Anu a SiC Seed Crystal Dia 205/203/208 4H-N Mtundu wa Optical Communications Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

SiC (silicon carbide) seed crystal substrates, monga zonyamulira za m'badwo wachitatu semiconductor zipangizo, kupezerapo mwayi mkulu matenthedwe conductivity awo (4.9 W/cm·K), kopitilira muyeso-m'mwamba breakdown kumunda mphamvu (2–4 MV/cm), ndi wide bandgap (3.2 eV) kuti akhale maziko, 5GG, 5. mapulogalamu. Kudzera muukadaulo wapamwamba kwambiri wopangira zinthu monga vapor transport (PVT) ndi fluid phase epitaxy (LPE), XKH imapereka mtundu wa 4H/6H-N-N, semi-insulating, ndi 3C-SiC polytype mbewu zagawo mu mawonekedwe a 2–12-inch wafer, okhala ndi kachulukidwe ka micropipe pansi pa 0,20 m² ndi 2cm⁩ kuyambira 3 cm mpaka 2 m² kukana, 3 cm ⁩ ndi 3 cm pamwamba roughness (Ra) <0.2 nm. Ntchito zathu zikuphatikiza kukula kwa heteroepitaxial (mwachitsanzo, SiC-on-Si), makina olondola a nanoscale (± 0.1 μm kulolerana), komanso kutumiza mwachangu padziko lonse lapansi, kupatsa mphamvu makasitomala kuthana ndi zopinga zaukadaulo ndikufulumizitsa kusalowerera ndale kwa kaboni komanso kusintha kwanzeru.

Titumizireni imelo

Mawonekedwe

Zosintha zaukadaulo

Chophika chambewu cha silicon carbide
Polytype	4H
Kulakwitsa koyang'ana pamwamba	4 ° kulowera <11-20> ± 0.5º
Kukaniza	makonda
Diameter	205 ± 0.5mm
Makulidwe	600±50μm
Ukali	CMP, Ra≤0.2nm
Kuchuluka kwa Micropipe	≤1 gawo/cm2
Zikanda	≤5, Kutalika Kwathunthu≤2 * Diameter
M'mphepete tchipisi / indents	Palibe
Chizindikiro cha laser chakutsogolo	Palibe
Zikanda	≤2, Utali Wonse≤Diameter
M'mphepete tchipisi / indents	Palibe
Magawo a polytype	Palibe
Chizindikiro cha laser kumbuyo	1mm (kuchokera m'mphepete)
M'mphepete	Chamfer
Kupaka	Makaseti amitundu yambiri

Makhalidwe Ofunikira

1. Kapangidwe ka Crystal ndi Magwiridwe Amagetsi

· Kukhazikika kwa Crystallographic: 100% 4H-SiC polytype dominance, zero multicrystalline inclusions (mwachitsanzo, 6H / 15R), ndi XRD rocking curve yodzaza ndi theka-maximum (FWHM) ≤32.7 arcsec.

· High Carrier Mobility: Kuyenda kwa ma elekitironi a 5,400 cm²/V·s (4H-SiC) ndi kuyenda kwa mabowo 380 cm²/V·s, kupangitsa mapangidwe azipangizo zamafupipafupi.

·Kulimba kwa Radiation: Imapirira 1 MeV neutron radiation yokhala ndi 1 × 10¹⁵ n/cm², yabwino pazamlengalenga ndi kugwiritsa ntchito zida za nyukiliya.

2. Thermal ndi Mechanical Properties

· Kuthekera Kwapadera kwa Thermal Conductivity: 4.9 W/cm·K (4H-SiC), katatu ya silicon, kuthandizira kugwira ntchito pamwamba pa 200 ° C.

· Low Thermal Expansion Coefficient: CTE ya 4.0 × 10⁻⁶/K (25-1000 ° C), kuonetsetsa kuti zimagwirizana ndi zoyika pa silicon ndikuchepetsa kupsinjika kwa kutentha.

3. Kuwongolera Zowonongeka ndi Kukonzekera Kulondola

Kachulukidwe ka Micropipe: <0.3 cm⁻² (zowotcha ma inchi 8), kusasunthika kwapang'onopang'ono <1,000 cm⁻² (kutsimikiziridwa kudzera pa KOH etching).

· Ubwino Pamwamba: CMP yopukutidwa mpaka Ra <0.2 nm, ikukwaniritsa zofunikira za EUV lithography-grade flatness.

Mapulogalamu Ofunika Kwambiri

Domain	Ma Applications Scenarios	Ubwino Waukadaulo
Kulumikizana kwa Optical	100G/400G lasers, silicon photonics hybrid modules	Magawo a mbewu a InP amathandiza mwachindunji bandgap (1.34 eV) ndi Si-based heteroepitaxy, kuchepetsa kutayika kwa kuwala.
New Energy Vehicles	800V high-voltage inverters, ma charger onboard (OBC)	Magawo a 4H-SiC amapirira> 1,200 V, amachepetsa kutayika kwa conduction ndi 50% ndi kuchuluka kwa dongosolo ndi 40%.
5G Communications	Zida za RF za millimeter-wave (PA/LNA), ma amplifiers a base station	Ma Semi-insulating SiC substrates (resistivity >10⁵ Ω·cm) amathandiza kuti ma frequency apamwamba (60 GHz+) agwirizane.
Zida Zamakampani	Masensa otentha kwambiri, zosintha zamakono, zowunikira za nyukiliya	Magawo a mbewu a InSb (0.17 eV bandgap) amapereka mphamvu ya maginito mpaka 300%@10 T.

Ubwino waukulu

SiC (silicon carbide) seed crystal substrates imapereka magwiridwe antchito osayerekezeka ndi 4.9 W/cm·K matenthedwe matenthedwe, 2–4 MV/cm kusweka kumunda kulimba, ndi 3.2 eV wide bandgap, kupangitsa kuti amphamvu kwambiri, ma frequency apamwamba, komanso kugwiritsa ntchito kutentha kwambiri. Zokhala ndi zero kachulukidwe ka ma micropipe ndi <1,000 cm⁻² kusasunthika kwapang'onopang'ono, magawowa amatsimikizira kudalirika pakachitika zovuta kwambiri. Kusakhazikika kwawo kwamankhwala ndi malo ogwirizana ndi CVD (Ra <0.2 nm) amathandizira kukula kwa heteroepitaxial (mwachitsanzo, SiC-on-Si) kwa optoelectronics ndi machitidwe amagetsi a EV.

Ntchito za XKH:

1. Kupanga Mwamakonda Anu

Mawonekedwe Opindika Ophika: Zophika 2-12-inch zokhala ndi zozungulira, zamakona anayi, kapena zodulidwa mwamakonda (± 0.01 mm kulolerana).

· Doping Control: Precise nitrogen (N) ndi aluminiyamu (Al) doping kudzera mu CVD, kukwaniritsa resistivity ranges kuchokera 10⁻³ mpaka 10⁶ Ω·cm.

2. MwaukadauloZida Njira Technologiespa

· Heteroepitaxy: SiC-on-Si (yogwirizana ndi mizere ya silicon ya 8-inch) ndi SiC-on-Diamond (kutentha kwa kutentha> 2,000 W/m·K).

Kuchepetsa Kuwonongeka: Kuyika kwa haidrojeni ndi kutsekera kuti muchepetse kuwonongeka kwa ma micropipe/kachulukidwe, kupititsa patsogolo zokolola za mkate wofewa mpaka> 95%.

3. Njira Zoyendetsera Ubwinopa

Kuyesa-Kumapeto-Kumapeto: Raman spectroscopy (polytype verification), XRD (crystallinity), ndi SEM (kusanthula zolakwika).

· Zitsimikizo: Zogwirizana ndi AEC-Q101 (magalimoto), JEDEC (JEDEC-033), ndi MIL-PRF-38534 (gulu lankhondo).

4. Thandizo la Global Supply Chainpa

· Mphamvu Zopanga: Kutulutsa pamwezi> 10,000 wafers (60% 8-inch), ndi kutumiza kwadzidzidzi kwa maola 48.

· Logistics Network: Kufalikira ku Europe, North America, ndi Asia-Pacific kudzera pamayendedwe apamlengalenga/panyanja okhala ndi zotengera zoyendetsedwa ndi kutentha.

5. Technical Co-Developmentpa

· Ma Labu Ophatikizana a R&D: Gwirizanani ndi kukhathamiritsa kwapang'onopang'ono kwa module ya SiC (mwachitsanzo, kuphatikiza gawo lapansi la DBC).

· IP Licensing: Perekani chilolezo chaukadaulo cha GaN-on-SiC RF epitaxial kukula kuti muchepetse ndalama zamakasitomala za R&D.

Chidule

Magawo a SiC (silicon carbide) a kristalo wa mbewu, monga chida chanzeru, akukonzanso unyolo wamakampani apadziko lonse lapansi kudzera pakukula kwa kristalo, kuwongolera zilema, ndi kuphatikiza kosiyanasiyana. Popitirizabe kupititsa patsogolo kuchepetsa kuwonongeka kwa wafer, kukulitsa kupanga 8-inch, ndi kukulitsa nsanja za heteroepitaxial (mwachitsanzo, SiC-on-Diamond), XKH imapereka njira zodalirika, zotsika mtengo za optoelectronics, mphamvu zatsopano, ndi kupanga zamakono. Kudzipereka kwathu pazatsopano kumawonetsetsa kuti makasitomala amatsogola muzandale za carbon ndi machitidwe anzeru, kuyendetsa nyengo yotsatira ya chilengedwe cha wide-bandgap semiconductor ecosystem.