Ma Substrates a SiC Seed Crystal Opangidwa Mwamakonda Dia 205/203/208 4H-N Type for Optical Communications

Kufotokozera Kwachidule:

Ma substrate a kristalo a mbewu za SiC (silicon carbide), monga onyamula zinthu za semiconductor za m'badwo wachitatu, amagwiritsa ntchito mphamvu yawo yotenthetsera kwambiri (4.9 W/cm·K), mphamvu ya field breakdown yamphamvu kwambiri (2–4 MV/cm), ndi bandgap yayikulu (3.2 eV)kuti ikhale ngati zinthu zoyambira zamagetsi, magalimoto atsopano amphamvu, kulumikizana kwa 5G, ndi ntchito zamlengalenga. Kudzera muukadaulo wapamwamba wopanga monga physical vapor transport (PVT)ndi liquid phase epitaxy (LPE), XKH imapereka 4H/6H-N-type, semi-insulating, ndi 3C-SiC polytype seed substrates mu mawonekedwe a wafer a mainchesi 2–12, okhala ndi micropipe densities pansi pa 0.3 cm⁻², resistivity kuyambira 20–23 mΩ·cm, ndi surface roughness (Ra) <0.2 nm. Ntchito zathu zikuphatikizapo kukula kwa heteroepitaxial (monga SiC-on-Si), makina olondola a nanoscale (± 0.1 μm tolerance), ndi kutumiza mwachangu padziko lonse lapansi, kupatsa mphamvu makasitomala kuthana ndi zopinga zaukadaulo ndikufulumizitsa kusalowerera ndale kwa kaboni komanso kusintha kwanzeru.

Tumizani imelo kwa ife

Mawonekedwe

Magawo aukadaulo

Chophimba cha mbewu cha silicon carbide
Mtundu wa Polytype	4H
Cholakwika cha mawonekedwe a pamwamba	4°kulunjika<11-20>±0.5º
Kusakhazikika	kusintha
M'mimba mwake	205±0.5mm
Kukhuthala	600±50μm
Kuuma	CMP,Ra≤0.2nm
Kuchuluka kwa mapaipi ang'onoang'ono	≤1 pa/cm2
Kukanda	≤5, Kutalika konse≤2 * M'mimba mwake
Zidutswa/zopindika m'mphepete	Palibe
Kulemba chizindikiro cha laser yakutsogolo	Palibe
Kukanda	≤2, Kutalika konse ≤Diameter
Zidutswa/zopindika m'mphepete	Palibe
Madera a polytype	Palibe
Kulemba chizindikiro cha laser kumbuyo	1mm (kuchokera m'mphepete mwa pamwamba)
Mphepete	Chamfer
Kulongedza	Kaseti ya ma wafer ambiri

Makhalidwe Ofunika

1. Kapangidwe ka Crystal ndi Magwiridwe Amagetsi

· Kukhazikika kwa Crystallographic: 100% 4H-SiC polytype dominance, palibe ma inclusions ambiri (monga, 6H/15R), ndi XRD rocking curve full-width pa half-maximum (FWHM) ≤32.7 arcsec.

· Kuyenda Kwambiri kwa Chonyamulira: Kuyenda kwa ma elekitironi kwa 5,400 cm²/V·s (4H-SiC) ndi kuyenda kwa mabowo kwa 380 cm²/V·s, zomwe zimathandiza kupanga zida zama frequency apamwamba.

·Kulimba kwa Radiation: Imapirira 1 MeV neutron irradiation yokhala ndi malire a kuwonongeka kwa displacement a 1×10¹⁵ n/cm², yoyenera kugwiritsidwa ntchito mumlengalenga ndi nyukiliya.

2. Katundu wa Kutentha ndi Makina

· Kutentha Kwapadera Kwambiri: 4.9 W/cm·K (4H-SiC), katatu kuposa silicon, kuthandizira kugwira ntchito pamwamba pa 200°C.

· Kuchuluka kwa Kutentha Kochepa: CTE ya 4.0×10⁻⁶/K (25–1000°C), kuonetsetsa kuti ikugwirizana ndi ma CD okhala ndi silicon ndikuchepetsa kupsinjika kwa kutentha.

3. Kuwongolera ndi Kukonza Zilema Mwangwiro

· Kuchuluka kwa Micropipe: <0.3 cm⁻² (ma wafer a mainchesi 8), kuchuluka kwa dislocation <1,000 cm⁻² (kutsimikiziridwa kudzera mu KOH etching).

· Ubwino wa pamwamba: CMP-yopukutidwa mpaka Ra <0.2 nm, ikukwaniritsa zofunikira za EUV lithography-grade flatness.

Mapulogalamu Ofunika

Domeni	Zochitika Zogwiritsira Ntchito	Ubwino Waukadaulo
Kulankhulana kwa Ma Optical	Ma laser a 100G/400G, ma module a silicon photonics hybrid	Ma substrates a mbewu za InP amalola kuti pakhale bandgap yolunjika (1.34 eV) ndi heteroepitaxy yochokera ku Si, zomwe zimachepetsa kutayika kwa ma coupling optical.
Magalimoto Atsopano a Mphamvu	Ma inverter amphamvu a 800V, ma charger omwe ali mkati (OBC)	Ma substrates a 4H-SiC amatha kupirira >1,200 V, zomwe zimachepetsa kutayika kwa conduction ndi 50% ndi voliyumu ya dongosolo ndi 40%.
Kulumikizana kwa 5G	Zipangizo za Millimeter-wave RF (PA/LNA), ma amplifiers amphamvu a siteshoni yoyambira	Ma substrates a SiC oteteza pang'ono (resistivity >10⁵ Ω·cm) amalola kuphatikiza kwapamwamba kwambiri (60 GHz+).
Zida Zamakampani	Masensa otentha kwambiri, ma transformer amagetsi, zowunikira za nyukiliya	Ma substrates a mbewu za InSb (0.17 eV bandgap) amapereka mphamvu ya maginito mpaka 300%@10 T.

Ubwino Waukulu

Ma substrate a kristalo a mbewu ya SiC (silicon carbide) amapereka magwiridwe antchito osayerekezeka ndi kutentha kwa 4.9 W/cm·K, mphamvu ya 2–4 MV/cm yogawa mphamvu, ndi bandgap ya 3.2 eV, zomwe zimathandiza kugwiritsa ntchito mphamvu zambiri, ma frequency apamwamba, komanso kutentha kwambiri. Pokhala ndi kuchuluka kwa micropipe kosakwana zero ndi kuchuluka kwa dislocation kwa <1,000 cm⁻², ma substrate awa amatsimikizira kudalirika m'mikhalidwe yovuta kwambiri. Kulephera kwawo kwa mankhwala ndi malo ogwirizana ndi CVD (Ra <0.2 nm) amathandizira kukula kwa heteroepitaxial (monga, SiC-on-Si) ya ma optoelectronics ndi machitidwe amphamvu a EV.

Ntchito za XKH:

1. Kupanga Kwamakonda

· Mawonekedwe Osinthasintha a Wafer: Ma wafer a mainchesi 2–12 okhala ndi zodulidwa zozungulira, zamakona anayi, kapena zooneka ngati zachikhalidwe (± 0.01 mm kulekerera).

· Kulamulira Kugwiritsa Ntchito Mankhwala Ochepetsa Mphamvu: Kugwiritsa ntchito mankhwala ochepetsa mphamvu ya nayitrogeni (N) ndi aluminiyamu (Al) molondola kudzera mu CVD, zomwe zimapangitsa kuti mphamvu ya resistivity ikhale yosiyana kuyambira 10⁻³ mpaka 10⁶ Ω·cm.

2. Ukadaulo Wapamwamba wa Njirapa

· Heteroepitaxy: SiC-on-Si (yogwirizana ndi mizere ya silicon ya mainchesi 8) ndi SiC-on-Diamond (kutentha kwa kutentha >2,000 W/m·K).

· Kuchepetsa Ziphuphu: Kudula ndi kuyika hydrogen kuti muchepetse zolakwika za micropipe/density, zomwe zimapangitsa kuti wafer ikule kufika pa >95%.

3. Machitidwe Oyang'anira Ubwinopa

· Kuyesa Komaliza: Raman spectroscopy (kutsimikizira kwa polytype), XRD (crystallinity), ndi SEM (kusanthula zolakwika).

· Ziphaso: Zogwirizana ndi AEC-Q101 (galimoto), JEDEC (JEDEC-033), ndi MIL-PRF-38534 (ya gulu lankhondo).

4. Thandizo la Unyolo Wopereka Zinthu Padziko Lonsepa

· Mphamvu Yopangira: Zotulutsa pamwezi > ma wafer 10,000 (60% mainchesi 8), ndi kutumiza kwadzidzidzi kwa maola 48.

· Network Yogulitsa Zinthu: Kufalikira ku Europe, North America, ndi Asia-Pacific kudzera mu ndege/nyanja ndi mapaketi olamulidwa ndi kutentha.

5. Kupititsa patsogolo Ukadaulopa

· Ma Joint R&D Labs: Gwirizanani pa kukonza bwino ma phukusi a SiC power module (monga, kuphatikiza DBC substrate).

· Chilolezo cha IP: Perekani chilolezo cha ukadaulo wakukula kwa epitaxial wa GaN-on-SiC RF kuti muchepetse ndalama zofufuzira ndi chitukuko cha makasitomala.

Chidule

Ma kristalo a mbewu za SiC (silicon carbide), monga chinthu chofunikira kwambiri, akukonzanso maunyolo apadziko lonse lapansi kudzera mu kupita patsogolo kwa kukula kwa makristalo, kuwongolera zolakwika, ndi kuphatikiza kosiyanasiyana. Mwa kupitiliza kupititsa patsogolo kuchepetsa zolakwika za wafer, kukulitsa kupanga kwa mainchesi 8, ndikukulitsa nsanja za heteroepitaxial (monga SiC-on-Diamond), XKH imapereka mayankho odalirika komanso otsika mtengo a optoelectronics, mphamvu zatsopano, ndi kupanga zinthu zapamwamba. Kudzipereka kwathu kuzinthu zatsopano kumawonetsetsa kuti makasitomala akutsogolera mu carbon neutrality ndi machitidwe anzeru, zomwe zimayendetsa nthawi yotsatira ya zachilengedwe za semiconductor zomwe zili ndi bandgap yayikulu.