Ma Wafers a GaN-on-SiC Epitaxial Opangidwa Mwamakonda (100mm, 150mm) – Zosankha Zambiri za SiC Substrate (4H-N, HPSI, 4H/6H-P)
Mawonekedwe
● Kukhuthala kwa Epitaxial Layer: Zosinthika kuchokera1.0 µmku3.5 µm, yokonzedwa bwino kuti igwire ntchito mwamphamvu komanso pafupipafupi.
●Zosankha za SiC Substrate: Imapezeka ndi ma substrates osiyanasiyana a SiC, kuphatikizapo:
- 4H-N: 4H-SiC yopangidwa ndi nayitrogeni yapamwamba kwambiri yogwiritsidwa ntchito pafupipafupi komanso yamphamvu kwambiri.
- HPSI: High-Purity Semi-Insulating SiC yogwiritsidwa ntchito pofunikira kuipatula kwamagetsi.
- 4H/6H-P: Mixed 4H ndi 6H-SiC kuti pakhale bwino komanso kudalirika.
●Makulidwe a WaferIkupezeka mu100mmndi150mmma diameters kuti azitha kusinthasintha pakukula ndi kuphatikiza zida.
● Voltage Yochepa Kwambiri: GaN pa ukadaulo wa SiC imapereka mphamvu yamagetsi yotsika kwambiri, zomwe zimathandiza kuti ntchito ikhale yolimba pakugwiritsa ntchito mphamvu zambiri.
●Kutentha Kwambiri: Kuchuluka kwa kutentha kwa SiC (pafupifupi 490 W/m·K) imatsimikizira kuti kutentha kumachotsedwa bwino kwambiri pakugwiritsa ntchito mphamvu zambiri.
Mafotokozedwe Aukadaulo
| Chizindikiro | Mtengo |
| M'mimba mwake wa chofufumitsa | 100mm, 150mm |
| Kukhuthala kwa Epitaxial Layer | 1.0 µm – 3.5 µm (yosinthika) |
| Mitundu ya SiC Substrate | 4H-N, HPSI, 4H/6H-P |
| Kuyendetsa kwa SiC Kutentha | 490 W/m·K |
| Kusakhazikika kwa SiC | 4H-N: 10^6 Ω·cm,HPSI: Zoteteza pang'ono,4H/6H-P: Zosakaniza 4H/6H |
| Kukhuthala kwa GaN Layer | 1.0 µm – 2.0 µm |
| Kukhazikika kwa GaN Carrier | 10^18 cm^-3 mpaka 10^19 cm^-3 (yosinthika) |
| Ubwino wa pamwamba pa Wafer | Kuuma kwa RMS: < 1 nm |
| Kuchulukana kwa Kusuntha | < 1 x 10^6 cm^-2 |
| Uta wa Wafer | < 50 µm |
| Kusalala kwa Wafer | < 5 µm |
| Kutentha Kwambiri Kwambiri | 400°C (nthawi zambiri pa zipangizo za GaN-on-SiC) |
Mapulogalamu
●Zamagetsi Zamagetsi:Ma wafer a GaN-on-SiC amapereka mphamvu zambiri komanso amatha kutenthetsa kutentha, zomwe zimapangitsa kuti akhale abwino kwambiri pa ma amplifiers amphamvu, zida zosinthira mphamvu, ndi ma power-inverter circuits omwe amagwiritsidwa ntchito m'magalimoto amagetsi, makina obwezeretsanso mphamvu, ndi makina amafakitale.
●Zowonjezera Mphamvu za RF:Kuphatikiza kwa GaN ndi SiC ndikwabwino kwambiri pakugwiritsa ntchito ma RF amphamvu kwambiri monga kulumikizana kwa mafoni, kulumikizana kwa satellite, ndi machitidwe a radar.
●Ndege ndi Chitetezo:Ma wafer awa ndi oyenera kugwiritsa ntchito ukadaulo wa ndege ndi chitetezo womwe umafunikira zida zamagetsi zamagetsi komanso njira zolumikizirana zomwe zimatha kugwira ntchito m'malo ovuta.
●Mapulogalamu Ogwiritsa Ntchito Magalimoto:Zabwino kwambiri pamagetsi amphamvu omwe amagwira ntchito bwino m'magalimoto amagetsi (EV), magalimoto osakanikirana (HEV), ndi malo ochajira magetsi, zomwe zimathandiza kusintha ndi kuwongolera mphamvu bwino.
●Machitidwe a Asilikali ndi Radar:Ma wafer a GaN-on-SiC amagwiritsidwa ntchito mu radar systems chifukwa cha kugwira ntchito bwino, mphamvu zogwiritsira ntchito mphamvu, komanso kutentha m'malo ovuta.
●Magwiritsidwe Ntchito a Microwave ndi Millimeter-Wave:Kwa makina olumikizirana a m'badwo wotsatira, kuphatikizapo 5G, GaN-on-SiC imapereka magwiridwe antchito abwino kwambiri m'ma microwave amphamvu kwambiri komanso ma millimeter-wave ranges.
Mafunso ndi Mayankho
Q1: Kodi ubwino wogwiritsa ntchito SiC ngati substrate ya GaN ndi wotani?
A1:Silicon Carbide (SiC) imapereka mphamvu yabwino kwambiri yoyendetsera kutentha, mphamvu yotsika kwambiri, komanso mphamvu ya makina poyerekeza ndi zinthu zakale monga silicon. Izi zimapangitsa kuti ma wafer a GaN-on-SiC akhale abwino kwambiri pakugwiritsa ntchito mphamvu zambiri, pafupipafupi kwambiri, komanso kutentha kwambiri. Chinthu cha SiC chimathandiza kuthetsa kutentha komwe kumapangidwa ndi zipangizo za GaN, zomwe zimapangitsa kuti zikhale zodalirika komanso zogwira ntchito bwino.
Q2: Kodi makulidwe a epitaxial layer angasinthidwe kuti agwiritsidwe ntchito pazifukwa zinazake?
A2:Inde, makulidwe a epitaxial layer akhoza kusinthidwa mkati mwa mitundu yosiyanasiyana1.0 µm mpaka 3.5 µm, kutengera mphamvu ndi zofunikira za pulogalamu yanu. Tikhoza kusintha makulidwe a GaN layer kuti tiwongolere magwiridwe antchito a zida zinazake monga ma power amplifier, RF systems, kapena ma high-frequency circuits.
Q3: Kodi pali kusiyana kotani pakati pa 4H-N, HPSI, ndi 4H/6H-P SiC substrates?
A3:
- 4H-N: 4H-SiC yokhala ndi nayitrogeni imagwiritsidwa ntchito kwambiri pa ntchito zama frequency ambiri zomwe zimafuna mphamvu zamagetsi zambiri.
- HPSI: High-Purity Semi-Insulating SiC imapereka magetsi olekanitsidwa, abwino kwambiri pa ntchito zomwe sizifuna mphamvu zambiri zamagetsi.
- 4H/6H-P: Kuphatikiza kwa 4H ndi 6H-SiC komwe kumalinganiza magwiridwe antchito, kupereka kuphatikiza kwa magwiridwe antchito apamwamba komanso kulimba, koyenera kugwiritsa ntchito zida zamagetsi zamagetsi zosiyanasiyana.
Q4: Kodi ma wafer a GaN-on-SiC awa ndi oyenera kugwiritsidwa ntchito ndi mphamvu zambiri monga magalimoto amagetsi ndi mphamvu zongowonjezwdwanso?
A4:Inde, ma wafer a GaN-on-SiC ndi oyenera kugwiritsidwa ntchito ndi mphamvu zambiri monga magalimoto amagetsi, mphamvu zongowonjezwdwanso, ndi machitidwe a mafakitale. Mphamvu yamagetsi yotsika kwambiri, kutentha kwambiri, komanso mphamvu zoyendetsera mphamvu za zida za GaN-on-SiC zimawathandiza kugwira ntchito bwino m'mabwalo osinthira mphamvu ndi owongolera omwe amafunikira.
Q5: Kodi kuchuluka kwa ma wafer awa nthawi zambiri kumakhala kotani?
A5:Kuchuluka kwa dislocation kwa ma wafer a GaN-on-SiC awa nthawi zambiri kumakhala< 1 x 10^6 cm^-2, zomwe zimatsimikizira kukula kwa epitaxial kwapamwamba, kuchepetsa zolakwika ndikukweza magwiridwe antchito ndi kudalirika kwa chipangizocho.
Q6: Kodi ndingapemphe kukula kwa wafer kapena mtundu wa SiC substrate?
A6:Inde, timapereka ma wafer opangidwa mwamakonda (100mm ndi 150mm) ndi mitundu ya SiC substrate (4H-N, HPSI, 4H/6H-P) kuti tikwaniritse zosowa zanu. Chonde titumizireni uthenga kuti mudziwe zambiri zokhudza kusintha kwa zinthu komanso kukambirana zomwe mukufuna.
Q7: Kodi ma wafer a GaN-on-SiC amagwira ntchito bwanji m'malo ovuta kwambiri?
A7:Ma wafer a GaN-on-SiC ndi abwino kwambiri m'malo ovuta kwambiri chifukwa cha kukhazikika kwawo kutentha, mphamvu zambiri, komanso kuthekera kwawo kotulutsa kutentha bwino. Ma wafer amenewa amagwira ntchito bwino m'malo otentha kwambiri, amphamvu kwambiri, komanso okhala ndi ma frequency ambiri omwe amapezeka nthawi zambiri m'malo oyendera ndege, chitetezo, komanso mafakitale.
Mapeto
Ma Wafer athu a GaN-on-SiC Epitaxial Wafers Opangidwa Mwamakonda Amaphatikiza mawonekedwe apamwamba a GaN ndi SiC kuti apereke magwiridwe antchito apamwamba kwambiri pamagwiritsidwe ntchito amphamvu kwambiri komanso pafupipafupi. Ndi njira zingapo za SiC substrate ndi zigawo za epitaxial zomwe zingasinthidwe, ma wafer awa ndi abwino kwambiri m'mafakitale omwe amafuna magwiridwe antchito apamwamba, kuyang'anira kutentha, komanso kudalirika. Kaya ndi zamagetsi zamagetsi, machitidwe a RF, kapena mapulogalamu oteteza, ma wafer athu a GaN-on-SiC amapereka magwiridwe antchito komanso kusinthasintha komwe mukufuna.
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