Ma GaN-on-SiC Epitaxial Wafers (100mm, 150mm) - Zosankha zingapo za SiC Substrate (4H-N, HPSI, 4H/6H-P)

Kufotokozera Kwachidule:

Ma GaN-on-SiC Epitaxial Wafers athu a Customized GaN-on-SiC Epitaxial Wafers amapereka ntchito yabwino kwambiri yamagetsi apamwamba, othamanga kwambiri pophatikiza zinthu zapadera za Gallium Nitride (GaN) ndi mphamvu zamatenthedwe komanso mphamvu zamakina.Silicon Carbide (SiC). Zopatulirazi zimapezeka mu makulidwe a 100mm ndi 150mm, zopatulirazi zimamangidwa pazosankha zingapo za SiC, kuphatikiza 4H-N, HPSI, ndi mitundu ya 4H/6H-P, zokonzedwa kuti zikwaniritse zofunikira pamagetsi amagetsi, zokulitsa RF, ndi zida zina zapamwamba za semiconductor. Ndi magawo osinthika a epitaxial ndi magawo apadera a SiC, zopyapyala zathu zidapangidwa kuti zitsimikizire kuyendetsa bwino, kasamalidwe kamafuta, komanso kudalirika pakugwiritsa ntchito mafakitale.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zogulitsa Tags

Mawonekedwe

● Epitaxial Layer Thickness: Customizable kuchokera1.0µmku3.5µm, wokometsedwa chifukwa champhamvu kwambiri komanso magwiridwe antchito pafupipafupi.

● Zosankha za SiC Substrate: Imapezeka ndi magawo osiyanasiyana a SiC, kuphatikiza:

4H-N: Nayitrogeni-doped 4H-SiC yapamwamba kwambiri yogwiritsira ntchito pafupipafupi, yamphamvu kwambiri.
HPSI: High-Purity Semi-Insulating SiC pamapulogalamu omwe amafunikira kudzipatula kwamagetsi.
4H/6H-P: Wosakaniza 4H ndi 6H-SiC kuti mukhale ndi mphamvu zambiri komanso zodalirika.

●Kukula Kwake: Ikupezeka mu100 mmndi150 mmma diameters kuti athe kusinthasintha pakukulitsa ndi kuphatikiza kwa chipangizo.

● Mphamvu yamagetsi yamphamvu kwambiri: Ukadaulo wa GaN pa SiC umapereka ma voliyumu osweka kwambiri, zomwe zimapangitsa kuti pakhale ntchito zolimba pamapulogalamu apamwamba kwambiri.

● High Thermal Conductivity: SiC's inherent thermal conductivity (pafupifupi 490 W/m·K) amaonetsetsa kutentha kwabwino kwa ntchito zogwiritsa ntchito mphamvu zambiri.

Mfundo Zaukadaulo

Parameter	Mtengo
Wafer Diameter	100mm, 150mm
Epitaxial Layer Makulidwe	1.0 µm - 3.5 µm (zosintha mwamakonda)
Mitundu ya SiC Substrate	4H-N, HPSI, 4H/6H-P
SiC Thermal Conductivity	490 W/m·K
SiC Resistivity	4H-Nkukula: 10^6 Ω·cm,HPSI: Semi-insulating,4H/6H-P: Wosakanikirana 4H / 6H
Makulidwe a GaN Layer	1.0 µm - 2.0 µm
GaN Carrier Concentration	10^18cm^-3 mpaka 10^19cm^-3 (mwamakonda)
Wafer Surface Quality	Kuvuta kwa RMS: <1 nm
Dislocation Density	<1 x 10^6cm^-2
Wafer Bow	<50µm
Wafer Flatness	<5µm
Kutentha Kwambiri Kwambiri	400 ° C (yodziwika pazida za GaN-on-SiC)

Mapulogalamu

●Zamagetsi Zamagetsi:Zophika za GaN-on-SiC zimapereka mphamvu zambiri komanso kutentha kwapang'onopang'ono, zomwe zimawapangitsa kukhala abwino kwa amplifiers, zida zosinthira mphamvu, ndi ma circuit-inverter magetsi omwe amagwiritsidwa ntchito pamagalimoto amagetsi, mphamvu zowonjezera mphamvu, ndi makina a mafakitale.
● RF Power Amplifiers:Kuphatikiza kwa GaN ndi SiC ndikwabwino pamapulogalamu apamwamba kwambiri, amphamvu kwambiri a RF monga matelefoni, ma satellite communications, ndi makina a radar.
● Zamlengalenga ndi Chitetezo:Zophika izi ndizoyenera matekinoloje am'mlengalenga ndi chitetezo omwe amafunikira zida zamagetsi zamagetsi zogwira ntchito kwambiri komanso njira zolumikizirana zomwe zimatha kugwira ntchito movutikira.
●Mapulogalamu Agalimoto:Zoyenera pamakina opangira mphamvu zamagetsi pamagalimoto amagetsi (EVs), magalimoto osakanizidwa (HEVs), ndi malo opangira zolipirira, zomwe zimathandizira kutembenuka ndi kuwongolera mphamvu moyenera.
●Military and Radar Systems:Zowotcha za GaN-on-SiC zimagwiritsidwa ntchito m'makina a radar chifukwa chogwira ntchito bwino kwambiri, mphamvu zogwiritsira ntchito mphamvu, komanso kutentha kwamafuta m'malo ovuta.
●Microwave ndi Millimeter-Wave Application:Kwa machitidwe olankhulirana a m'badwo wotsatira, kuphatikizapo 5G, GaN-on-SiC imapereka ntchito yabwino kwambiri mu microwave yamphamvu kwambiri ndi ma millimeter-wave ranges.

Q&A

Q1: Ubwino wogwiritsa ntchito SiC ngati gawo la gawo la GaN ndi chiyani?

A1:Silicon Carbide (SiC) imapereka matenthedwe apamwamba kwambiri, magetsi owonongeka kwambiri, komanso mphamvu zamakina poyerekeza ndi magawo azikhalidwe monga silicon. Izi zimapangitsa zowotcha za GaN-on-SiC kukhala zabwino kwambiri zamphamvu, zothamanga kwambiri, komanso zotentha kwambiri. Gawo laling'ono la SiC limathandizira kutulutsa kutentha kopangidwa ndi zida za GaN, kuwongolera kudalirika ndi magwiridwe antchito.

Q2: Kodi makulidwe a epitaxial wosanjikiza angasinthidwe kuti agwiritse ntchito?

A2:Inde, makulidwe a epitaxial layer amatha kusinthidwa mwamakonda osiyanasiyana1.0 µm mpaka 3.5µm, kutengera mphamvu ndi kuchuluka kwa zomwe mukufuna kugwiritsa ntchito. Titha kusintha makulidwe a GaN kuti tikwaniritse magwiridwe antchito pazida zinazake monga ma amplifiers, makina a RF, kapena ma frequency okwera kwambiri.

Q3: Kodi pali kusiyana kotani pakati pa magawo a 4H-N, HPSI, ndi 4H/6H-P SiC?

A3:

4H-N: Nayitrogeni-doped 4H-SiC imagwiritsidwa ntchito kwambiri pamapulogalamu apamwamba omwe amafunikira magwiridwe antchito apamwamba amagetsi.
HPSI: High-Purity Semi-Insulating SiC imapereka kudzipatula kwamagetsi, koyenera kwa mapulogalamu omwe amafunikira kuwongolera kwamagetsi kochepa.
4H/6H-P: Kusakaniza kwa 4H ndi 6H-SiC komwe kumayenderana ndi ntchito, kumapereka kuphatikizika kwapamwamba komanso kulimba, koyenera kugwiritsa ntchito magetsi osiyanasiyana.

Q4: Kodi izi zowotcha za GaN-on-SiC ndizoyenera kugwiritsa ntchito mphamvu zambiri monga magalimoto amagetsi ndi mphamvu zongowonjezwdwa?

A4:Inde, zowotcha za GaN-on-SiC ndizoyenera kugwiritsa ntchito mphamvu zambiri monga magalimoto amagetsi, mphamvu zongowonjezwdwa, ndi machitidwe a mafakitale. Magetsi osweka kwambiri, ma conductivity apamwamba amafuta, komanso mphamvu zogwiritsira ntchito zida za GaN-on-SiC zimawathandiza kuti azigwira bwino ntchito pofuna kutembenuza mphamvu ndikuwongolera mabwalo.

Q5: Kodi kachulukidwe kake kamene kamasokonekera pamapaketi awa?

A5:Kuchulukana kwapang'onopang'ono kwa zowotcha za GaN-on-SiC izi nthawi zambiri<1 x 10^6cm^-2, zomwe zimatsimikizira kukula kwa epitaxial kwapamwamba, kuchepetsa zolakwika ndikuwongolera magwiridwe antchito ndi kudalirika kwa chipangizocho.

Q6: Kodi ndingapemphe kukula kwake kwawafa kapena mtundu wagawo la SiC?

A6:Inde, timapereka makulidwe opindika makonda (100mm ndi 150mm) ndi mitundu yagawo ya SiC (4H-N, HPSI, 4H/6H-P) kuti ikwaniritse zosowa zanu. Chonde titumizireni kuti musankhe zina mwamakonda ndikukambirana zomwe mukufuna.

Q7: Kodi zowotcha za GaN-on-SiC zimagwira ntchito bwanji m'malo ovuta kwambiri?

A7:Zowotcha za GaN-on-SiC ndizoyenera kumadera ovuta kwambiri chifukwa cha kukhazikika kwawo kwa kutentha, kuwongolera mphamvu kwambiri, komanso kutha kwabwino kwambiri kwa kutentha. Zophika izi zimagwira ntchito bwino pakutentha kwambiri, mphamvu zambiri, komanso ma frequency apamwamba omwe nthawi zambiri amakumana nawo muzamlengalenga, chitetezo, komanso ntchito zamafakitale.

Mapeto

Ma GaN-on-SiC Epitaxial Wafers Athu Okhazikika amaphatikiza zida zapamwamba za GaN ndi SiC kuti apereke magwiridwe antchito apamwamba pamagetsi apamwamba komanso othamanga kwambiri. Ndi zosankha zingapo za gawo lapansi la SiC komanso magawo osinthika a epitaxial, zophika izi ndizoyenera kumafakitale omwe amafunikira kuchita bwino kwambiri, kuwongolera kutentha, komanso kudalirika. Kaya ndi zamagetsi zamagetsi, makina a RF, kapena mapulogalamu achitetezo, zowotcha zathu za GaN-on-SiC zimapereka magwiridwe antchito komanso kusinthasintha komwe mukufuna.