Mtundu wa SiC Seed Substrate wa Mtundu wa N wa 153/155mm wa Mphamvu Zamagetsi

Mtundu wa SiC Seed Substrate Dia153/155mm wa Mphamvu Zamagetsi Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Ma substrate a mbewu za Silicon Carbide (SiC) amagwira ntchito ngati maziko a ma semiconductors a m'badwo wachitatu, omwe amadziwika ndi kutentha kwawo kwakukulu, mphamvu zamagetsi zosweka bwino, komanso kuyenda kwa ma elekitironi ambiri. Makhalidwe amenewa amawapangitsa kukhala ofunikira kwambiri pa zamagetsi zamagetsi, zida za RF, magalimoto amagetsi (EVs), ndi ntchito zamagetsi zongowonjezwdwanso. XKH imagwira ntchito yofufuza ndi chitukuko komanso kupanga ma substrate a mbewu za SiC zapamwamba kwambiri, pogwiritsa ntchito njira zapamwamba zokulira makristalo monga Physical Vapor Transport (PVT) ndi High-Temperature Chemical Vapor Deposition (HTCVD) kuti zitsimikizire kuti makristalo ndi abwino kwambiri m'makampani.

Tumizani imelo kwa ife

Mawonekedwe

Dziwitsani

XKH imapereka ma substrates a mbewu za SiC a mainchesi 4, mainchesi 6, ndi mainchesi 8 okhala ndi mankhwala opangidwa ndi mtundu wa N/P omwe amasintha kukhala osinthika, omwe amakwaniritsa milingo yotsutsa ya 0.01-0.1 Ω·cm ndi kuchulukana kwa dislocation pansi pa 500 cm⁻², zomwe zimapangitsa kuti zikhale zabwino kwambiri popanga ma MOSFET, Schottky Barrier Diodes (SBDs), ndi ma IGBT. Njira yathu yopangira yolumikizidwa molunjika imakhudza kukula kwa kristalo, kudula ma wafer, kupukuta, ndi kuyang'anira, ndi mphamvu yopangira mwezi uliwonse yoposa ma wafers 5,000 kuti ikwaniritse zosowa zosiyanasiyana za mabungwe ofufuza, opanga ma semiconductor, ndi makampani opanga mphamvu zongowonjezwdwanso.

Kuphatikiza apo, timapereka njira zothetsera mavuto, kuphatikizapo:

Kusintha kwa mawonekedwe a kristalo (4H-SiC, 6H-SiC)

Mankhwala apadera a doping (Aluminium, Nayitrogeni, Boron, ndi zina zotero)

Kupukuta kosalala kwambiri (Ra < 0.5 nm)

XKH imathandizira kukonza pogwiritsa ntchito zitsanzo, upangiri waukadaulo, ndi kupanga zitsanzo zazing'ono kuti zipereke mayankho abwino a SiC substrate.

Magawo aukadaulo

Chophimba cha mbewu cha silicon carbide
Mtundu wa Polytype	4H
Cholakwika cha mawonekedwe a pamwamba	4°kulunjika<11-20>±0.5º
Kusakhazikika	kusintha
M'mimba mwake	205±0.5mm
Kukhuthala	600±50μm
Kuuma	CMP,Ra≤0.2nm
Kuchuluka kwa mapaipi ang'onoang'ono	≤1 pa/cm2
Kukanda	≤5, Kutalika konse≤2 * M'mimba mwake
Zidutswa/zopindika m'mphepete	Palibe
Kulemba chizindikiro cha laser yakutsogolo	Palibe
Kukanda	≤2, Kutalika konse ≤Diameter
Zidutswa/zopindika m'mphepete	Palibe
Madera a polytype	Palibe
Kulemba chizindikiro cha laser kumbuyo	1mm (kuchokera m'mphepete mwa pamwamba)
Mphepete	Chamfer
Kulongedza	Kaseti ya ma wafer ambiri

Ma Substrate a Mbewu za SiC - Makhalidwe Ofunika

1. Katundu Wapadera Wooneka

· Kutentha kwambiri (~490 W/m·K), kumaposa kwambiri silicon (Si) ndi gallium arsenide (GaAs), zomwe zimapangitsa kuti ikhale yabwino kwambiri poziziritsa zipangizo zamagetsi amphamvu kwambiri.

· Mphamvu ya malo ogwirira ntchito (~3 MV/cm), zomwe zimathandiza kuti ntchito ikhale yokhazikika pansi pa mphamvu yamagetsi yapamwamba, zomwe ndizofunikira kwambiri pa ma inverter amagetsi ndi ma module amphamvu a mafakitale.

· Chigawo chachikulu cha bandgap (3.2 eV), kuchepetsa kutuluka kwa madzi pa kutentha kwambiri komanso kulimbitsa kudalirika kwa chipangizocho.

2. Ubwino Wapamwamba wa Crystalline

· Ukadaulo wa kukula kwa PVT + HTCVD hybrid umachepetsa zolakwika za micropipe, kusunga kuchuluka kwa dislocation pansi pa 500 cm⁻².

· Wafer uta/warp < 10 μm ndi kuuma kwa pamwamba Ra < 0.5 nm, kuonetsetsa kuti ikugwirizana ndi lithography yolondola kwambiri komanso njira zochepetsera filimu yopyapyala.

3. Zosankha Zosiyanasiyana Zogwiritsa Ntchito Mankhwala Osokoneza Bongo

·N-type (Yopangidwa ndi nayitrogeni): Kukana kwamphamvu (0.01-0.02 Ω·cm), kokonzedwa bwino kuti zigwiritsidwe ntchito pazida za RF zama frequency apamwamba.

· Mtundu wa P (Wopangidwa ndi Aluminium): Wabwino kwambiri pa ma MOSFET amphamvu ndi ma IGBT, zomwe zimathandiza kuti zinthu ziyende bwino.

· SiC yoteteza kutentha pang'ono (yopangidwa ndi Vanadium): Kukana kwa Resistivity > 10⁵ Ω·cm, yokonzedwa kuti igwirizane ndi ma module a 5G RF front-end.

4. Kukhazikika kwa Zachilengedwe

· Kukana kutentha kwambiri (>1600°C) ndi kuuma kwa radiation, koyenera kugwiritsa ntchito ndege, zida za nyukiliya, ndi malo ena oopsa.

Ma Substrate a Mbewu za SiC - Ntchito Zoyambira

1. Zamagetsi Zamagetsi Zamagetsi

· Magalimoto Amagetsi (EV): Amagwiritsidwa ntchito mu ma charger omwe ali m'galimoto (OBC) ndi ma inverter kuti apititse patsogolo magwiridwe antchito ndikuchepetsa kufunikira kwa kayendetsedwe ka kutentha.

· Machitidwe a Mphamvu Zamakampani: Amawonjezera ma inverter a photovoltaic ndi ma grid anzeru, zomwe zimapangitsa kuti mphamvu zisinthe bwino kwambiri kuposa 99%.

2. Zipangizo za RF

· Malo Oyambira a 5G: Ma substrates a SiC omwe amateteza pang'ono amathandizira ma amplifiers amphamvu a GaN-on-SiC RF, omwe amathandizira kutumiza ma signali amphamvu kwambiri komanso pafupipafupi.

Kulankhulana kwa Satellite: Kutaya pang'ono kumapangitsa kuti ikhale yoyenera kugwiritsa ntchito zipangizo zamafunde a millimeter.

3. Kusungira Mphamvu Zobwezerezedwanso ndi Mphamvu

· Mphamvu ya dzuwa: SiC MOSFETs imathandizira kusintha kwa DC-AC pomwe imachepetsa ndalama zomwe zimagwiritsidwa ntchito pamakina.

· Machitidwe Osungira Mphamvu (ESS): Amakonza ma converter a mbali ziwiri ndikuwonjezera nthawi ya moyo wa batri.

4. Chitetezo ndi Ndege

· Makina a Radar: Zipangizo za SiC zamphamvu kwambiri zimagwiritsidwa ntchito mu ma radar a AESA (Active Electronically Scanned Array).

· Kusamalira Mphamvu za Zam'mlengalenga: Ma substrates a SiC osakhudzidwa ndi kuwala kwa dzuwa ndi ofunikira kwambiri pa ntchito za m'mlengalenga.

5. Kafukufuku & Ukadaulo Watsopano

· Quantum Computing: High-purity SiC imalola kafukufuku wa spin qubit.

· Masensa Otentha Kwambiri: Amagwiritsidwa ntchito pofufuza mafuta ndi kuyang'anira ma reactor a nyukiliya.

Ma Substrate a Mbewu za SiC - Ntchito za XKH

1. Ubwino wa Unyolo Wopereka

· Kupanga kogwirizana molunjika: Kulamulira kwathunthu kuyambira ufa wa SiC woyera kwambiri mpaka ma wafer omalizidwa, kuonetsetsa kuti nthawi yotsogolera ya masabata 4-6 pazinthu zokhazikika.

· Mpikisano pamitengo: Zachuma zomwe zili pamlingo waukulu zimathandiza kuti mitengo ikhale yotsika ndi 15-20% kuposa omwe akupikisana nawo, mothandizidwa ndi Mapangano Anthawi Yaitali (LTAs).

2. Ntchito Zosinthira Makonda

· Kuyang'ana kwa kristalo: 4H-SiC (muyezo) kapena 6H-SiC (mapulogalamu apadera).

· Kukonza bwino kugwiritsa ntchito mankhwala osokoneza bongo: Kapangidwe ka mtundu wa N/mtundu wa P/kapangidwe koteteza thupi.

· Kupukuta kwapamwamba: Kupukuta kwa CMP ndi chithandizo cha pamwamba chokonzeka ndi epi (Ra < 0.3 nm).

3. Thandizo laukadaulo

· Kuyesa kwaulere kwa zitsanzo: Kuphatikizapo malipoti a XRD, AFM, ndi Hall effect measurement.

· Thandizo loyerekeza chipangizo: Limathandizira kukula kwa epitaxial ndi kukonza kapangidwe ka chipangizocho.

4. Kuyankha Mwachangu

· Kupanga zitsanzo zochepa: Oda yocheperako ya ma wafer 10, yoperekedwa mkati mwa masabata atatu.

· Kayendetsedwe ka zinthu padziko lonse: Mgwirizano ndi DHL ndi FedEx popereka katundu khomo ndi khomo.

5. Chitsimikizo cha Ubwino

· Kuyang'anira kwathunthu: Kuphimba malo a X-ray (XRT) ndi kusanthula kwa defect defect.

· Ziphaso zapadziko lonse lapansi: Zikugwirizana ndi miyezo ya IATF 16949 (yamagalimoto) ndi miyezo ya AEC-Q101.

Mapeto

Ma substrates a mbewu za XKH a SiC ndi abwino kwambiri pa khalidwe la kristalo, kukhazikika kwa unyolo woperekera zinthu, komanso kusinthasintha kwa kusintha, kupereka zamagetsi zamagetsi, kulumikizana kwa 5G, mphamvu zongowonjezwdwanso, ndi ukadaulo woteteza. Tikupitiliza kupititsa patsogolo ukadaulo wopanga zinthu zambiri wa SiC wa mainchesi 8 kuti tipititse patsogolo makampani opanga zinthu za semiconductor a m'badwo wachitatu.

Yapitayi: SiC ceramic plate/thireyi ya chogwirira cha wafer cha mainchesi 4 cha mainchesi 6 cha ICP

Ena: Ma Substrates a SiC Seed Crystal Opangidwa Mwamakonda Dia 205/203/208 4H-N Type for Optical Communications