Mwambo N Mtundu wa SiC Seed Substrate Dia153/155mm Yamagetsi Amagetsi

Kufotokozera Kwachidule:

Magawo a mbewu a Silicon Carbide (SiC) amagwira ntchito ngati maziko a semiconductors a m'badwo wachitatu, wosiyanitsidwa ndi matenthedwe ake apamwamba kwambiri, kusweka kwamphamvu kwamagetsi, komanso kuyenda kwa ma elekitironi. Zinthu izi zimawapangitsa kukhala ofunikira pamagetsi amagetsi, zida za RF, magalimoto amagetsi (EVs), komanso kugwiritsa ntchito mphamvu zongowonjezwdwa. XKH imagwira ntchito pa R&D ndikupanga magawo apamwamba a mbewu za SiC, imagwiritsa ntchito njira zokulirapo za kristalo monga Physical Vapor Transport (PVT) ndi High-Temperature Chemical Vapor Deposition (HTCVD) kuwonetsetsa kuti makristalo otsogola kwambiri pamakampani.

 

 


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  • Mawonekedwe

    Mkate wa SiC 4
    SiC mbewu yophika mkate 5
    Mkate wa SiC 6

    yambitsani

    Magawo a mbewu a Silicon Carbide (SiC) amagwira ntchito ngati maziko a semiconductors a m'badwo wachitatu, wosiyanitsidwa ndi matenthedwe ake apamwamba kwambiri, kusweka kwamphamvu kwamagetsi, komanso kuyenda kwa ma elekitironi. Zinthu izi zimawapangitsa kukhala ofunikira pamagetsi amagetsi, zida za RF, magalimoto amagetsi (EVs), komanso kugwiritsa ntchito mphamvu zongowonjezwdwa. XKH imagwira ntchito pa R&D ndikupanga magawo apamwamba a mbewu za SiC, imagwiritsa ntchito njira zokulirapo za kristalo monga Physical Vapor Transport (PVT) ndi High-Temperature Chemical Vapor Deposition (HTCVD) kuwonetsetsa kuti makristalo otsogola kwambiri pamakampani.

    XKH imapereka magawo a 4-inch, 6-inch, ndi 8-inch SiC mbewu yokhala ndi doping yamtundu wa N-type/P, kukwaniritsa milingo ya resistivity ya 0.01-0.1 Ω·cm ndi kusasunthika kwa dislocation pansi pa 500 cm⁻², kuwapanga kukhala abwino popanga MOSFETs, Schottky Barriers Digital Ntchito yathu yophatikizika yophatikizika imakhudza kukula kwa kristalo, kuwotcha, kupukuta, ndikuwunika, ndikutha kupanga pamwezi kupitilira zowotcha 5,000 kuti zikwaniritse zofuna zosiyanasiyana zamabungwe ofufuza, opanga ma semiconductor, ndi makampani opanga mphamvu zongowonjezwdwa.

    Kuphatikiza apo, timapereka mayankho okhazikika, kuphatikiza:

    Kusintha kwa Crystal (4H-SiC, 6H-SiC)

    Doping wapadera (Aluminiyamu, Nayitrogeni, Boron, etc.)

    Kupukuta kosalala kwambiri (Ra <0.5 nm)

     

    XKH imathandizira potengera zitsanzo, kulumikizana ndiukadaulo, ndi mawonekedwe ang'onoang'ono kuti apereke mayankho okhathamiritsa a gawo lapansi la SiC.

    Zosintha zaukadaulo

    Chophika chambewu cha silicon carbide
    Polytype 4H
    Kulakwitsa koyang'ana pamwamba 4 ° kulowera <11-20> ± 0.5º
    Kukaniza makonda
    Diameter 205 ± 0.5mm
    Makulidwe 600±50μm
    Ukali CMP, Ra≤0.2nm
    Kuchuluka kwa Micropipe ≤1 gawo/cm2
    Zokanda ≤5, Kutalika Kwathunthu≤2 * Diameter
    M'mphepete tchipisi / indents Palibe
    Chizindikiro cha laser chakutsogolo Palibe
    Zokanda ≤2, Utali Wonse≤Diameter
    M'mphepete tchipisi / indents Palibe
    Zigawo za polytype Palibe
    Chizindikiro cha laser kumbuyo 1mm (kuchokera m'mphepete)
    M'mphepete Chamfer
    Kupaka Makaseti amitundu yambiri

    SiC Seed Substrates - Makhalidwe Ofunikira

    1. Zakuthupi Zapadera

    · Kutentha kwapamwamba (~ 490 W/m·K), kupitirira kwambiri silicon (Si) ndi gallium arsenide (GaAs), kupangitsa kuti ikhale yabwino kuziziritsa zamphamvu zamphamvu kwambiri.

    · Kuwonongeka kwamphamvu kwamunda (~ 3 MV / cm), kumathandizira kugwira ntchito mokhazikika pansi pazikhalidwe zamphamvu kwambiri, zofunika kwambiri ma inverters a EV ndi ma module amphamvu a mafakitale.

    * Wide bandgap (3.2 eV), kuchepetsa kutayikira kwamadzi pa kutentha kwakukulu ndikukulitsa kudalirika kwa chipangizo.

    2. Superior Crystalline Quality

    · Ukadaulo wa PVT + HTCVD wosakanizidwa wa kukula umachepetsa kuwonongeka kwa ma micropipe, kusunga kusasunthika kwapakatikati pa 500 cm⁻².

    · Wafer uta / warp <10 μm ndi pamwamba pa roughness Ra <0.5 nm, kuonetsetsa kuti ikugwirizana ndi ndondomeko yolondola kwambiri ya lithography ndi njira zochepetsera mafilimu.

    3. Zosiyanasiyana Doping Mungasankhe

    ·N-mtundu (Nitrogen-doped): Low resistivity (0.01-0.02 Ω·cm), zokongoletsedwa pazida za RF zothamanga kwambiri.

    · P-mtundu (Aluminium-doped): Yoyenera mphamvu ya MOSFETs ndi IGBTs, kupititsa patsogolo kuyenda.

    · Semi-insulating SiC (Vanadium-doped): Resistivity> 10⁵ Ω·cm, yopangidwira ma modules akutsogolo a 5G RF.

    4. Kukhazikika Kwachilengedwe

    Kutentha kwapamwamba (> 1600 ° C) ndi kuuma kwa radiation, koyenera mlengalenga, zida za nyukiliya, ndi malo ena ovuta kwambiri.

    SiC Seed Substrates - Ntchito Zoyambira

    1. Zamagetsi Zamagetsi

    · Magalimoto Amagetsi (EVs): Amagwiritsidwa ntchito pamachaja aku board (OBC) ndi ma inverter kuti apititse patsogolo magwiridwe antchito ndikuchepetsa kuwongolera kwamafuta.

    · Industrial Power Systems: Imakulitsa ma inverters a photovoltaic ndi ma grids anzeru, kukwaniritsa> 99% mphamvu yosinthira mphamvu.

    2. Zipangizo za RF

    · 5G Base Stations: Semi-insulating SiC substrates imathandizira zokulitsa mphamvu za GaN-on-SiC RF, zothandizira ma frequency apamwamba, kutumizira ma siginecha amphamvu kwambiri.

    Kulumikizana kwa Satellite: Makhalidwe otayika pang'ono amapangitsa kuti ikhale yoyenera pazida zamamilimita mafunde.

    3. Mphamvu Zowonjezera & Kusungirako Mphamvu

    · Mphamvu ya Dzuwa: SiC MOSFETs imathandizira kutembenuka kwa DC-AC ndikuchepetsa mtengo wadongosolo.

    · Energy Storage Systems (ESS): Imakulitsa zosintha zapawiri ndikuwonjezera moyo wa batri.

    4. Chitetezo & Zamlengalenga

    · Radar Systems: Zida za SiC zamphamvu kwambiri zimagwiritsidwa ntchito mu ma radar a AESA (Active Electronically Scanned Array).

    Kuwongolera Mphamvu za Spacecraft: Magawo a SiC osamva ma radiation ndi ofunikira kwambiri pamaulendo akuzama kwambiri.

    5. Research & Emerging Technologies 

    · Quantum Computing: High-purity SiC imathandizira kufufuza kwa qubit. 

    · Ma Sensor Otentha Kwambiri: Amayikidwa pakuwunika kwamafuta ndi kuyang'anira ma reactor a nyukiliya.

    SiC Seed Substrates - XKH Services

    1. Ubwino wa Supply Chain

    · Kupanga kophatikizika kophatikizika: Kuwongolera kwathunthu kuchokera ku ufa wapamwamba wa SiC mpaka zowotcha zomaliza, kuwonetsetsa nthawi zotsogola za masabata a 4-6 pazogulitsa zokhazikika.

    Kupikisana kwamitengo: Chuma chambiri chimathandizira mitengo yotsika ndi 15-20% kuposa omwe akupikisana nawo, mothandizidwa ndi Mapangano a Nthawi Yaitali (LTAs).

    2. Makonda Makonda Services

    Crystal orientation: 4H-SiC (muyezo) kapena 6H-SiC (ntchito zapadera).

    Kukhathamiritsa kwa Doping: Zogwirizana ndi N-mtundu / P-mtundu / semi-insulating katundu.

    · Kupukuta kwapamwamba: CMP kupukuta ndi epi-okonzeka pamwamba mankhwala (Ra <0.3 nm).

    3. Thandizo laukadaulo 

    · Kuyesa kwachitsanzo kwaulere: Kumaphatikizapo XRD, AFM, ndi malipoti a muyeso wa Hall effect. 

    · Kuthandizira kayeseleledwe kachipangizo: Kumathandizira kukula kwa epitaxial ndi kukhathamiritsa kwa kapangidwe kachipangizo. 

    4. Kuyankha Mwachangu 

    · Ma prototyping otsika kwambiri: Madongosolo ochepera a 10 ophika, operekedwa mkati mwa milungu itatu. 

    · Kayendetsedwe ka zinthu padziko lonse: Mgwirizano ndi DHL ndi FedEx potumiza khomo ndi khomo. 

    5. Chitsimikizo cha Ubwino 

    · Kuyang'ana kwathunthu: Kuphimba ma X-ray topography (XRT) ndi kusanthula kachulukidwe kachilema. 

    Ziphaso zapadziko lonse lapansi: Zimagwirizana ndi IATF 16949 (giredi yamagalimoto) ndi miyezo ya AEC-Q101.

    Mapeto

    Mbeu za XKH za SiC zimapambana kwambiri mumtundu wa crystalline, kukhazikika kwa chain chain, ndi kusinthasintha kwa makonda, kugwiritsa ntchito zamagetsi zamagetsi, mauthenga a 5G, mphamvu zowonjezereka, ndi matekinoloje a chitetezo. Tikupitiliza kupititsa patsogolo ukadaulo wa 8-inch SiC wopangira misala kuti upititse patsogolo msika wam'badwo wachitatu wa semiconductor.


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