6inch HPSI SiC gawo laling'ono laling'ono la Silicon Carbide Semi-kutukwana SiC wafers
PVT Silicon Carbide Crystal SiC Kukula Technology
Njira zamakono zokulirapo za SiC single crystal makamaka zimaphatikizapo zitatu izi: njira yamadzimadzi, kutentha kwambiri kwamankhwala opangira nthunzi, ndi njira yoyendera gawo la nthunzi (PVT). Pakati pawo, njira ya PVT ndiyo ukadaulo wofufuzidwa kwambiri komanso wokhwima wa SiC single crystal kukula, ndipo zovuta zake zaukadaulo ndi:
(1) SiC single kristalo mu kutentha kwa 2300 ° C pamwamba chatsekedwa graphite chipinda kumaliza "olimba - mpweya - olimba" kutembenuka recrystallization ndondomeko, kukula mkombero ndi yaitali, zovuta kulamulira, ndi sachedwa microtubules, inclusions ndi zolakwika zina.
(2) Silicon carbide single krustalo, kuphatikizapo oposa 200 mitundu yosiyanasiyana galasi, koma kupanga ambiri mtundu umodzi wokha galasi, zosavuta kutulutsa galasi mtundu kusintha mu ndondomeko kukula chifukwa Mipikisano mtundu inclusions zolakwika, kukonzekera ndondomeko ya limodzi. mtundu wamtundu wa kristalo ndi wovuta kuwongolera kukhazikika kwa njirayo, mwachitsanzo, gawo lalikulu la mtundu wa 4H.
(3) Silicon carbide single crystal kukula matenthedwe munda pali kutentha gradient, chifukwa mu ndondomeko kukula krustalo pali mbadwa kupsyinjika mkati ndi chifukwa dislocations, zolakwa ndi zina zolakwika anachititsa.
(4) Silicon carbide single krustalo kukula ndondomeko ayenera mosamalitsa kulamulira kuyambitsa zonyansa kunja, kuti kupeza mkulu kwambiri chiyero theka-kuteteza kristalo kapena directionally doped conductive kristalo. Pazigawo za semi-insulating silicon carbide zomwe zimagwiritsidwa ntchito pazida za RF, mphamvu zamagetsi zimayenera kukwaniritsidwa poyang'anira kutsika kwachidebe chochepa kwambiri ndi mitundu ina ya zolakwika mu kristalo.