6inch HPSI SiC gawo laling'ono laling'ono la Silicon Carbide Semi-kutukwana SiC wafers

Njira zokulirapo za SiC single crystal makamaka zimaphatikizapo zitatu izi: njira yamadzimadzi, kutentha kwamphamvu kwamankhwala opangira nthunzi, ndi njira yoyendera gawo la nthunzi (PVT). Pakati pawo, njira ya PVT ndiyo ukadaulo wofufuzidwa kwambiri komanso wokhwima wa SiC single crystal kukula, ndipo zovuta zake ndi:

(1) SiC limodzi galasi mu kutentha kwa 2300 ° C pamwamba chatsekedwa graphite chipinda kumaliza "olimba - mpweya - olimba" kutembenuka recrystallization ndondomeko, mkombero kukula ndi yaitali, zovuta kulamulira, ndi sachedwa microtubules, inclusions ndi zolakwika zina.

(2) Silicon carbide limodzi kristalo, kuphatikizapo oposa 200 mitundu yosiyanasiyana ya galasi, koma kupanga ambiri mtundu umodzi wokha galasi, zosavuta kutulutsa galasi mtundu kusintha mu ndondomeko kukula chifukwa mu Mipikisano mtundu inclusions zolakwika, kukonzekera ndondomeko ya mtundu umodzi yeniyeni kristalo n'zovuta kulamulira bata la ndondomeko, mwachitsanzo, waukulu panopa wa mtundu 4H.

(3) Silicon carbide single crystal kukula matenthedwe munda pali kutentha gradient, chifukwa mu ndondomeko kukula krustalo pali mbadwa kupsyinjika mkati ndi chifukwa dislocations, zolakwa ndi zina zolakwika anachititsa.

(4) Silicon carbide single krustalo kukula ndondomeko ayenera mosamalitsa kulamulira kuyambitsa zonyansa kunja, kuti kupeza mkulu kwambiri chiyero theka-kuteteza kristalo kapena directionally doped conductive kristalo. Pazigawo za semi-insulating silicon carbide zomwe zimagwiritsidwa ntchito pazida za RF, mphamvu zamagetsi zimayenera kukwaniritsidwa poyang'anira kutsika kwachidebe chochepa kwambiri ndi mitundu ina ya zolakwika mu kristalo.