SiC imodzi yozungulira ya mainchesi 6 yokhala ndi kristalo imodzi ya SiC yokhala ndi polycrystalline SiC composite substrate. M'mimba mwake ndi 150mm P mtundu N mtundu.

SiC imodzi yozungulira ya mainchesi 6 yokhala ndi polycrystalline SiC composite substrate. M'mimba mwake 150mm. Mtundu wa P. Mtundu wa N. Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Chopangidwa ndi monocrystalline SiC cha mainchesi 6 chopangidwa ndi polycrystalline SiC composite substrate chikuyimira njira yatsopano ya silicon carbide (SiC) yopangidwira zida zamagetsi zamagetsi zamphamvu kwambiri, kutentha kwambiri, komanso ma frequency apamwamba. Chopangidwachi chili ndi gawo logwira ntchito la single-crystal SiC lolumikizidwa ku polycrystalline SiC base kudzera munjira zapadera, kuphatikiza mphamvu zamagetsi zapamwamba za monocrystalline SiC ndi zabwino za polycrystalline SiC.
Poyerekeza ndi ma substrate a SiC a monocrystalline okhazikika, SiC ya monocrystalline ya mainchesi 6 yoyendetsedwa ndi polycrystalline SiC composite substrate imasunga kuyenda kwa ma elekitironi ambiri komanso kukana kwamagetsi okwera pomwe imachepetsa kwambiri ndalama zopangira. Kukula kwake kwa wafer ya mainchesi 6 (150 mm) kumatsimikizira kuti ikugwirizana ndi mizere yopanga ma semiconductor yomwe ilipo, zomwe zimathandiza kupanga zinthu zokulirapo. Kuphatikiza apo, kapangidwe kake kamalola kugwiritsidwa ntchito mwachindunji popanga zida zamagetsi (monga MOSFETs, diodes), kuchotsa kufunikira kwa njira zina zopangira doping ndikuchepetsa ntchito zopangira.

Tumizani imelo kwa ife

Mawonekedwe

Magawo aukadaulo

Kukula:	6 inchi
M'mimba mwake:	150 mm
Kukhuthala:	400-500 μm
Magawo a Filimu ya Monocrystalline SiC
Mtundu wa Polytype:	4H-SiC kapena 6H-SiC
Kuchuluka kwa Mankhwala Osokoneza Bongo:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Kukhuthala:	5-20 μm
Kukana kwa Mapepala:	10-1000 Ω/sikweya
Kuyenda kwa Ma Electron:	800-1200 cm²/Vs
Kuyenda kwa Dzenje:	100-300 cm²/Vs
Magawo a Polycrystalline SiC Buffer Layer
Kukhuthala:	50-300 μm
Kutentha kwa Matenthedwe:	150-300 W/m·K
Magawo a Monocrystalline SiC Substrate
Mtundu wa Polytype:	4H-SiC kapena 6H-SiC
Kuchuluka kwa Mankhwala Osokoneza Bongo:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Kukhuthala:	300-500 μm
Kukula kwa Tirigu:	> 1 mm
Kukhwima kwa pamwamba:	Kuchuluka kwa RMS < 0.3 mm
Katundu wa Makina ndi Magetsi
Kuuma:	9-10 Mohs
Mphamvu Yokakamiza:	3-4 GPa
Kulimba kwamakokedwe:	0.3-0.5 GPa
Mphamvu Yogawanika:	> 2 MV/cm
Kulekerera Mlingo Wonse:	> 10 Mrad
Kukana kwa Chochitika Chimodzi:	> 100 MeV·cm²/mg
Kutentha kwa Matenthedwe:	150-380 W/m·K
Kutentha kwa Ntchito:	-55 mpaka 600°C

Makhalidwe Ofunika

SiC ya monocrystalline ya mainchesi 6 yoyendetsedwa ndi polycrystalline SiC composite substrate imapereka mgwirizano wapadera wa kapangidwe ka zinthu ndi magwiridwe antchito, zomwe zimapangitsa kuti ikhale yoyenera malo ofunikira mafakitale:

1. Kugwira Ntchito Moyenera: Maziko a polycrystalline SiC amachepetsa kwambiri ndalama poyerekeza ndi full-monocrystalline SiC, pomwe monocrystalline SiC active layer imatsimikizira magwiridwe antchito a chipangizocho, abwino kwambiri pakugwiritsa ntchito ndalama zochepa.

2. Kapangidwe Kabwino Kamagetsi: Chosanjikiza cha monocrystalline SiC chimasonyeza kuyenda kwakukulu kwa chonyamulira (>500 cm²/V·s) komanso kuchepa kwa chilema, kuthandizira kugwira ntchito kwa chipangizocho pafupipafupi komanso champhamvu kwambiri.

3. Kukhazikika kwa Kutentha Kwambiri: Kukana kutentha kwambiri kwa SiC (>600°C) kumatsimikizira kuti gawo lophatikizana limakhala lokhazikika pamikhalidwe yovuta kwambiri, zomwe zimapangitsa kuti likhale loyenera magalimoto amagetsi ndi magalimoto amafakitale.

Kukula kwa Wafer Yokhazikika ya mainchesi 4.6: Poyerekeza ndi ma substrates achikhalidwe a mainchesi 4 a SiC, mawonekedwe a mainchesi 6 amawonjezera kuchuluka kwa chip ndi kupitirira 30%, zomwe zimachepetsa mtengo wa chipangizo chilichonse.

5. Kapangidwe Koyendetsera Zinthu: Zigawo za mtundu wa N kapena P zomwe zayikidwa kale zimachepetsa njira zokhazikitsira ma ion popanga zipangizo, zomwe zimapangitsa kuti ntchito yopangira zinthu izigwire bwino ntchito komanso kuti pakhale phindu.

6. Kuyang'anira Kutentha Kwambiri: Kuyenda kwa kutentha kwa maziko a polycrystalline SiC (~120 W/m·K) kumayandikira kwa monocrystalline SiC, kuthana bwino ndi mavuto otaya kutentha m'zida zamagetsi amphamvu kwambiri.

Makhalidwe amenewa amaika SiC ya monocrystalline ya mainchesi 6 pa polycrystalline SiC composite substrate ngati yankho lopikisana la mafakitale monga mphamvu zongowonjezwdwanso, mayendedwe a sitima, ndi ndege.

Mapulogalamu Oyambirira

SiC ya monocrystalline ya mainchesi 6 yoyendetsedwa ndi polycrystalline SiC composite substrate yagwiritsidwa ntchito bwino m'magawo angapo omwe amafunidwa kwambiri:
1. Ma Powertrain a Magalimoto Amagetsi: Amagwiritsidwa ntchito mu ma SiC MOSFET ndi ma diode amphamvu kwambiri kuti awonjezere magwiridwe antchito a inverter ndikuwonjezera mphamvu ya batri (monga Tesla, BYD models).

2. Magalimoto a Magalimoto a Mafakitale: Amalola ma module amphamvu otentha kwambiri, osinthasintha pafupipafupi, kuchepetsa kugwiritsa ntchito mphamvu mu makina olemera ndi ma turbine amphepo.

3. Ma Inverter a Photovoltaic: Zipangizo za SiC zimathandiza kuti mphamvu ya dzuwa igwire bwino ntchito (>99%), pomwe substrate yopangidwa ndi zinthu zosiyanasiyana imachepetsanso ndalama zomwe zimagwiritsidwa ntchito pamakina.

4. Kuyendera Sitima: Imagwiritsidwa ntchito mu zosinthira mphamvu zamagetsi pamayendedwe a sitima zapamtunda komanso zapansi panthaka, zomwe zimapereka kukana kwamphamvu kwamagetsi (>1700V) komanso mawonekedwe ang'onoang'ono.

5. Malo Oyendera Ndege: Abwino kwambiri pamakina amphamvu a satelayiti ndi mabwalo owongolera injini za ndege, omwe amatha kupirira kutentha kwambiri komanso kuwala kwa dzuwa.

Pakupanga zinthu mwaluso, SiC ya monocrystalline ya mainchesi 6 yoyendetsedwa ndi polycrystalline SiC composite substrate imagwirizana mokwanira ndi njira zodziwika bwino za chipangizo cha SiC (monga lithography, etching), zomwe sizifuna ndalama zina zowonjezera.

Ntchito za XKH

XKH imapereka chithandizo chokwanira cha SiC ya monocrystalline ya mainchesi 6 yoyendetsera ntchito pa polycrystalline SiC composite substrate, yomwe imagwira ntchito pa kafukufuku ndi chitukuko mpaka kupanga zinthu zambiri:

1. Kusintha: Kukhuthala kwa monocrystalline wosanjikiza (5–100 μm), kuchuluka kwa doping (1e15–1e19 cm⁻³), ndi mawonekedwe a kristalo (4H/6H-SiC) kuti akwaniritse zofunikira zosiyanasiyana za chipangizocho.

2. Kukonza Ma Wafer: Kupereka zinthu zambiri za mainchesi 6 zokhala ndi ntchito zochepetsera kumbuyo ndi zitsulo kuti ziphatikizidwe ndi pulagi ndi kusewera.

3. Kutsimikizira Kwaukadaulo: Kuphatikizapo kusanthula kwa kristalo ya XRD, kuyesa kwa Hall effect, ndi muyeso wotsutsa kutentha kuti mufulumizitse kuyenerera kwa zinthu.

4. Kujambula Mwachangu: Zitsanzo za mainchesi 2 mpaka 4 (njira yomweyo) za mabungwe ofufuza kuti afulumizitse zochitika za chitukuko.

5. Kusanthula ndi Kukonza Zolephera: Mayankho azinthu pamavuto okonza zinthu (monga zolakwika za epitaxial layer).

Cholinga chathu ndikukhazikitsa SiC ya monocrystalline ya mainchesi 6 yoyendetsera ntchito pa polycrystalline SiC composite substrate ngati njira yabwino kwambiri yogwiritsira ntchito ndalama zamagetsi za SiC, zomwe zimatithandiza kuyambira pakupanga zinthu mpaka kupanga zinthu zambiri.

Mapeto

SiC ya monocrystalline ya mainchesi 6 yoyendetsedwa ndi polycrystalline SiC composite substrate imakwaniritsa bwino magwiridwe antchito ndi mtengo kudzera mu kapangidwe kake katsopano ka mono/polycrystalline hybrid. Pamene magalimoto amagetsi akuchulukirachulukira ndipo Industry 4.0 ikupita patsogolo, substrate iyi imapereka maziko odalirika azinthu zamagetsi zamagetsi zam'badwo wotsatira. XKH ikulandira mgwirizano kuti ipitirire kufufuza kuthekera kwa ukadaulo wa SiC.