6 Inchi 4H SEMI Mtundu wa SiC wophatikizika gawo lapansi Makulidwe 500μm TTV≤5μm MOS kalasi

Kufotokozera Kwachidule:

Ndi kupita patsogolo kofulumira kwa ukadaulo wa 5G wolumikizirana ndi radar, gawo laling'ono la 6-inch Semi-insulating SiC composite lakhala chinthu chofunikira kwambiri popanga zida zapamwamba kwambiri. Poyerekeza ndi magawo achikhalidwe a GaAs, gawo lapansili limakhalabe lolimba kwambiri (> 10⁸ Ω·cm) pomwe limapangitsa kuti matenthedwe azitha kupitilira 5x, kuthana bwino ndi zovuta zochotsa kutentha pazida zamamilimita mafunde. Ma amplifiers mkati mwa zida zatsiku ndi tsiku monga mafoni a m'manja a 5G ndi malo olumikizirana ma satellite mwina amamangidwa pagawoli. Pogwiritsa ntchito ukadaulo wathu wa "buffer layer doping compensation", tachepetsa kachulukidwe ka ma micropipe kukhala pansi pa 0.5/cm² ndikutaya ma microwave otsika kwambiri ndi 0.05 dB/mm.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Zosintha zaukadaulo

Zinthu	Kufotokozera	Zinthu	Kufotokozera
Diameter	150±0.2 mm	Pamaso (Si-nkhope) roughness	Ra≤0.2 nm (5μm×5μm)
Polytype	4H	Edge Chip, Scratch, Crack (kuyang'ana kowoneka)	Palibe
Kukaniza	≥1E8 Ω·cm	TTV	≤5 μm
Choka wosanjikiza Makulidwe	≥0.4 μm	Warp	≤35 μm
Zopanda (2mm>D>0.5mm)	≤5 ea/Wafer	Makulidwe	500 ± 25 μm

Zofunika Kwambiri

1. Mwapadera High-Friquency Magwiridwe
Gawo la 6-inch semi-insulating SiC composite substrate limagwiritsa ntchito kapangidwe ka dielectric layer, kuwonetsetsa kuti dielectric imasinthasintha <2% mu Ka-band (26.5-40 GHz) ndikuwongolera kusasinthika kwa gawo ndi 40%. Kuwonjezeka kwa 15% pakuchita bwino ndi 20% kutsika kwa mphamvu zamagetsi mu T / R modules pogwiritsa ntchito gawo lapansili.

2. Kuwongolera Kutentha Kwambiri
Kapangidwe kapadera ka "thermal bridge" kaphatikizidwe kamathandizira kuti matenthedwe ozungulira azitha 400 W/m·K. Mu 28 GHz 5G base station PA modules, kutentha kwapakati kumakwera ndi 28 ° C kokha pambuyo pa maola 24 akugwira ntchito mosalekeza-50 ° C pansi kusiyana ndi njira zowonongeka.

3. Wopambana Wafer Quality
Kupyolera mu njira yokongoletsedwa ya Physical Vapor Transport (PVT), timapeza dislocation density <500/cm² ndi Total Thickness Variation (TTV) <3 μm.
4. Kupanga-Wochezeka Kukonza
Njira yathu yopangira laser annealing yopangidwira gawo la 6-inch semi-insulating SiC composite substrate imachepetsa kachulukidwe kamtunda ndi maulalo awiri a ukulu pamaso pa epitaxy.

Main Applications

1. 5G Base Station Core Components
M'magulu a antenna a Massive MIMO, zida za GaN HEMT pagawo la 6-inch semi-insulating SiC composite zimapeza mphamvu yotulutsa 200W ndi> 65% kuchita bwino. Mayeso am'munda pa 3.5 GHz adawonetsa kuwonjezeka kwa 30% kwa radius yofikira.

2. Njira Zolumikizirana za Satellite
Ma transceivers a satellite a Low-Earth orbit (LEO) omwe amagwiritsa ntchito gawo lapansili amawonetsa 8 dB apamwamba EIRP mu Q-band (40 GHz) pomwe amachepetsa kulemera ndi 40%. Ma terminal a SpaceX Starlink adatengera kuti apange anthu ambiri.

3. Military Radar Systems
Ma module a radar a T/R pagawoli amakwaniritsa bandwidth ya 6-18 GHz ndi phokoso lotsika mpaka 1.2 dB, kukulitsa kuchuluka kwa kuzindikira ndi 50 km pamakina ochenjeza oyambilira.

4. Magalimoto a Millimeter-Wave Radar
79 GHz tchipisi cha radar yamagalimoto ogwiritsa ntchito gawo lapansili amawongolera kusintha kwa angular mpaka 0.5 °, kukwaniritsa zofunika pagalimoto ya L4.

Timapereka yankho lathunthu lautumiki wa 6-inch semi-insulating SiC composite substrates. Pankhani yosintha makonda azinthu, timathandizira kuwongolera koyenera kwa resistivity mkati mwa 10⁶-10¹⁰ Ω·cm. Makamaka pazankhondo, titha kukupatsani mwayi wokana kwambiri>10⁹ Ω·cm. Amapereka makulidwe atatu a 200μm, 350μm ndi 500μm nthawi imodzi, ndi kulolerana kumayendetsedwa mosamalitsa mkati mwa ± 10μm, kukwaniritsa zofunikira zosiyanasiyana kuchokera kuzipangizo zamafupipafupi kupita kumagetsi apamwamba kwambiri.

Pankhani ya njira zochizira pamwamba, timapereka njira ziwiri zamaluso: Chemical Mechanical Polishing (CMP) imatha kukwaniritsa kukhazikika kwa atomiki ndi Ra<0.15nm, kukwaniritsa zofunikira zakukula kwa epitaxial; The epitaxial okonzeka pamwamba mankhwala zipangizo amafuna mofulumira kupanga akhoza kupereka kopitilira muyeso-yosalala pamwamba ndi Sq<0.3nm ndi otsalira oxide makulidwe <1nm, kwambiri kufewetsa njira pretreatment kumapeto kasitomala.

XKH imapereka mayankho okhazikika amitundu 6-inch Semi-insulating SiC composite substrates

1. Zofunika Parameter Kusintha Mwamakonda Anu
Timapereka zochunira zodzitchinjiriza za 10⁶-10¹⁰ Ω·cm, zokhala ndi mwayi wosankha mwapadera kwambiri>10⁹ Ω·cm zopezeka pazankhondo/zamlengalenga.

2. Makulidwe Mafotokozedwe
Zosankha zitatu zokhazikika zokhazikika:

200μm (zokongoletsedwa pazida zama frequency apamwamba)

350μm (zokhazikika)

500μm (zopangidwira ntchito zamphamvu kwambiri)
· Mitundu yonse imakhala ndi kulekerera kolimba kwa ± 10μm.

3. Njira Zochiritsira Zapamwamba

Chemical Mechanical Polishing (CMP): Imakwaniritsa kusalala kwa pamwamba pa ma atomiki ndi Ra<0.15nm, kukwaniritsa zofunikira zakukula kwa epitaxial kwa RF ndi zida zamagetsi.

4. Epi-Ready Surface Processing

· Imapereka malo osalala kwambiri okhala ndi Sq<0.3nm roughness

Imawongolera makulidwe achilengedwe a oxide mpaka <1nm

· Imachotsa mpaka 3 njira zokonzetsera zisanachitike pamakasitomala