6 mu Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
Katundu
1. Katundu Wakuthupi ndi Kapangidwe
● Mtundu Wazinthu: Silicon Carbide (SiC)
● Polytype: 4H-SiC, mawonekedwe a kristalo a hexagonal
● Diameter: mainchesi 6 (150 mm)
● Kunenepa: Zosinthika (5-15 mm zofananira ndi giredi yadummy)
● Crystal Orientation:
oPrimary: [0001] (C-ndege)
oSeconndary options: Off-axis 4° pakukula bwino kwa epitaxial
●Kuyang'ana Kwambiri Kwambiri: (10-10) ± 5 °
● Kuyang'ana kwa Flat Yachiwiri: 90 ° motsatira koloko kuchokera ku flat flat ± 5 °
2. Zida Zamagetsi
●Kukana:
oSemi-insulating (>106^66 Ω·cm), yabwino yochepetsera mphamvu ya parasitic.
● Mtundu wa Doping:
oDoped mwangozi, zomwe zimapangitsa kuti magetsi azitha kupirira komanso kukhazikika pansi pazikhalidwe zosiyanasiyana.
3. Thermal Properties
● Thermal Conductivity: 3.5-4.9 W / cm·K, zomwe zimathandiza kuti pakhale kutentha kwabwino m'makina amphamvu kwambiri.
● Coefficient Yowonjezera Kutentha: 4.2 × 10−64.2 \ nthawi 10 ^ {-6} 4.2 × 10−6 / K, kuonetsetsa kukhazikika kwa dimensional panthawi yotentha kwambiri.
4. Optical Properties
● Bandgap: Wide bandgap wa 3.26 eV, kulola ntchito pansi pa ma voltages apamwamba ndi kutentha.
● Transparency: Kuwonekera kwambiri kwa UV ndi mafunde owoneka bwino, othandiza pakuyesa kwa optoelectronic.
5. Katundu Wamakina
● Kuuma: Mohs sikelo 9, yachiwiri kwa diamondi, kuonetsetsa kulimba panthawi yokonza.
●Kuchulukana kwa Chilema:
oYowongoleredwa pazovuta zazing'ono, kuwonetsetsa kuti zili bwino pamapulogalamu amtundu wa dummy.
●Kufulatika: Kufanana ndi zopatuka
Parameter | Tsatanetsatane | Chigawo |
Gulu | Dummy Grade | |
Diameter | 150.0 ± 0.5 | mm |
Wafer Orientation | Pa-axis: <0001> ± 0.5° | digiri |
Kukaniza Magetsi | > 1e5 | Ω·cm |
Chiyambi cha Flat Orientation | {10-10} ± 5.0° | digiri |
Utali Woyambira Wathyathyathya | Notch | |
Ming'alu (Kuwunika Kuwala Kwambiri) | <3 mm mu radial | mm |
Hex Plates (Kuwunika Kwapamwamba Kwambiri) | Malo owonjezera ≤ 5% | % |
Madera a Polytype (Kuwunika Kuwala Kwambiri) | Malo owonjezera ≤ 10% | % |
Kuchuluka kwa Micropipe | <50 | cm−2^-2−2 |
Edge Chipping | 3 ololedwa, aliyense ≤ 3 mm | mm |
Zindikirani | Slicing wafer makulidwe <1 mm,> 70% (kupatula malekezero awiri) amakwaniritsa zofunikira pamwambapa |
Mapulogalamu
1. Kujambula ndi Kafukufuku
Dummy-grade 6-inch 4H-SiC ingot ndi chinthu chabwino chopangira ma prototyping ndi kafukufuku, kulola opanga ndi ma laboratories kuti:
●Yesani magawo a ndondomeko mu Chemical Vapor Deposition (CVD) kapena Physical Vapor Deposition (PVD).
● Khazikitsani ndi kuyeretsa njira zowotchera, zopukutira, ndi zosekera.
●Unikani mapangidwe atsopano a chipangizocho musanasinthe kupita kuzinthu zopanga.
2. Kusintha kwa Chipangizo ndi Kuyesa
Ma semi-insulating amapangitsa kuti ingot iyi ikhale yofunikira pa:
●Kuwunika ndi kuwerengetsa mphamvu zamagetsi zamagetsi amphamvu kwambiri komanso othamanga kwambiri.
●Kutengera momwe amagwirira ntchito ma MOSFET, ma IGBT, kapena ma diode m'malo oyeserera.
●Kugwira ntchito m'malo otsika mtengo m'malo oyeretsa kwambiri panthawi yachitukuko choyambirira.
3. Zamagetsi Zamagetsi
Mapangidwe apamwamba amafuta komanso mawonekedwe a 4H-SiC amathandizira kugwira ntchito bwino pamagetsi amagetsi, kuphatikiza:
● Magetsi amphamvu kwambiri.
● Ma inverter a galimoto yamagetsi (EV).
● Makina opangira mphamvu zongowonjezwdwa, monga ma inverter a solar ndi ma turbines amphepo.
4. Mapulogalamu a Radio Frequency (RF).
Kutayika kwa dielectric kwa 4H-SiC komanso kuyenda kwa ma elekitironi kumapangitsa kuti ikhale yoyenera:
● RF amplifiers ndi transistors muzitsulo zoyankhulirana.
● Makina opangira ma radar apamwamba kwambiri azamlengalenga ndi chitetezo.
● Zida zama netiweki opanda zingwe zamaukadaulo omwe akubwera a 5G.
5. Zida Zolimbana ndi Ma radiation
Chifukwa cha kukana kwake ku zovuta zomwe zimayambitsidwa ndi ma radiation, semi-insulating 4H-SiC ndi yabwino kwa:
●Zipangizo zofufuzira zinthu zakuthambo, kuphatikizapo ma satellite electronics ndi magetsi.
● Zipangizo zamagetsi zolimba ndi ma radiation kuti athe kuyang'anira ndi kuwongolera.
●Mapulogalamu achitetezo omwe amafunikira kulimba m'malo ovuta kwambiri.
6. Optoelectronics
Kuwonekera kwa kuwala ndi bandgap yayikulu ya 4H-SiC imathandizira kugwiritsidwa ntchito mu:
● Zojambulajambula za UV ndi ma LED amphamvu kwambiri.
●Kuyesa zokutira zowoneka bwino komanso machiritso apamwamba.
● Prototyping optical components for advanced sensors.
Ubwino wa Dummy-Grade Material
Mtengo Mwachangu:
Gulu la dummy ndi njira yotsika mtengo yopangira kafukufuku kapena zida zopanga, zomwe zimapangitsa kuti zikhale zoyenera kuyesa mwachizolowezi ndikuwongolera.
Kusintha mwamakonda:
Miyezo yosinthika ndi mawonekedwe a kristalo amatsimikizira kuti zimagwirizana ndi mapulogalamu osiyanasiyana.
Scalability:
Kukula kwa mainchesi 6 kumayenderana ndi miyezo yamakampani, kulola kukulitsa kosasinthika kunjira zamakalasi opangira.
Kulimba:
Mphamvu zamakina apamwamba komanso kukhazikika kwamafuta kumapangitsa kuti ingot ikhale yolimba komanso yodalirika pamiyeso yosiyanasiyana yoyesera.
Kusinthasintha:
Ndiwoyenera kumafakitale angapo, kuchokera kumakina amagetsi kupita ku kulumikizana ndi ma optoelectronics.
Mapeto
6-inch Silicon Carbide (4H-SiC) semi-insulating ingot, dummy grade, imapereka nsanja yodalirika komanso yosunthika ya kafukufuku, prototyping, ndi kuyesa m'magawo aukadaulo apamwamba. Matenthedwe ake apadera, magetsi, ndi makina amakina, kuphatikiza kukwanitsa komanso kusinthika mwamakonda, zimapangitsa kukhala chinthu chofunikira kwambiri kwa ophunzira ndi mafakitale. Kuchokera pamagetsi amagetsi kupita ku makina a RF ndi zida zowumitsidwa ndi ma radiation, ingot iyi imathandizira zatsopano pagawo lililonse lachitukuko.
Kuti mudziwe zambiri kapena kufunsa mtengo wamtengo wapatali, chonde titumizireni mwachindunji. Gulu lathu laukadaulo ndilokonzeka kukuthandizani ndi mayankho ogwirizana kuti akwaniritse zomwe mukufuna.