4inch SiC Epi chowotcha cha MOS kapena SBD

Epitaxy imatanthawuza kukula kwa zinthu zosanjikiza zapamwamba zamtundu umodzi wa kristalo pamwamba pa gawo lapansi la silicon carbide. Pakati pawo, kukula kwa gallium nitride epitaxial wosanjikiza pa semi-insulating silicon carbide gawo lapansi amatchedwa heterogeneous epitaxy; Kukula kwa silicon carbide epitaxial layer pamwamba pa conductive silicon carbide gawo lapansi kumatchedwa homogeneous epitaxy.

Epitaxial imagwirizana ndi zofunikira za kapangidwe ka chipangizo cha kukula kwa gawo lalikulu la ntchito, makamaka limatsimikizira magwiridwe antchito a chip ndi chipangizocho, mtengo wa 23%. Njira zazikulu za SiC woonda filimu epitaxy pa siteji iyi ndi monga: chemical vapor deposition (CVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), ndi pulsed laser deposition and sublimation (PLD).

Epitaxy ndi ulalo wofunikira kwambiri pamakampani onse. Mwa kukulitsa zigawo za GaN epitaxial pazigawo za semi-insulating silicon carbide, zowotcha za GaN epitaxial zochokera ku silicon carbide zimapangidwa, zomwe zimatha kupangidwanso kukhala zida za GaN RF monga ma electron mobility transistors (HEMTs);

Ndi kukula pakachitsulo carbide epitaxial wosanjikiza pa conductive gawo lapansi kuti pakachitsulo carbide epitaxial mtanda, ndi wosanjikiza epitaxial pa kupanga Schottky diode, golide-oksijeni theka-munda tingati transistors, insulated chipata bipolar transistors ndi zipangizo zina mphamvu, kotero khalidwe la epitaxial pa ntchito yaikulu kwambiri pa ntchito ya chipangizo ndi mbali yofunika kwambiri pa chitukuko cha chipangizo ndi kusewera kwambiri ndi gawo la chitukuko cha chipangizo.