Wafa wa 4inch SiC Epi wa MOS kapena SBD

Epitaxy imatanthauza kukula kwa wosanjikiza wa chinthu chapamwamba kwambiri cha kristalo imodzi pamwamba pa substrate ya silicon carbide. Pakati pawo, kukula kwa wosanjikiza wa gallium nitride epitaxial pa substrate ya silicon carbide yoteteza pang'ono kumatchedwa heterogeneous epitaxy; kukula kwa wosanjikiza wa silicon carbide epitaxial pamwamba pa substrate ya silicon carbide yoyendetsa magetsi kumatchedwa homogeneous epitaxy.

Epitaxial ikugwirizana ndi zofunikira pakupanga chipangizo cha kukula kwa gawo lalikulu la ntchito, makamaka imatsimikizira magwiridwe antchito a chip ndi chipangizocho, mtengo wake ndi 23%. Njira zazikulu za SiC thin film epitaxy pagawoli ndi izi: chemical vapor deposition (CVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), ndi pulsed laser deposition and sublimation (PLD).

Epitaxy ndi mgwirizano wofunikira kwambiri mumakampani onse. Mwa kukulitsa zigawo za GaN epitaxial pa substrates za silicon carbide zomwe zimateteza kutentha, ma wafer a GaN epitaxial ozikidwa pa silicon carbide amapangidwa, omwe amatha kupangidwanso kukhala zida za GaN RF monga ma transistors okwera ma electron mobility (HEMTs);

Mwa kukulitsa silicon carbide epitaxial wosanjikiza pa conductive substrate kuti mupeze silicon carbide epitaxial wafer, ndi mu epitaxial wosanjikiza popanga ma Schottky diodes, gold-oxygen half-field effect transistors, insulated gate bipolar transistors ndi zida zina zamagetsi, kotero khalidwe la epitaxial pa magwiridwe antchito a chipangizocho ndi lalikulu kwambiri pakukula kwa makampani.