4inch 6inch 8inch SiC Crystal Kukula Ng'anjo ya CVD Njira

Kufotokozera Kwachidule:

XKH's SiC Crystal Growth Furnace CVD Chemical Vapor Deposition system imagwiritsa ntchito ukadaulo wotsogola kwambiri padziko lonse lapansi wopangira nthunzi, womwe umapangidwira kukula kwapamwamba kwa SiC single crystal. Kupyolera mu kuwongolera kolondola kwa magawo a ndondomeko kuphatikizapo kuyenda kwa gasi, kutentha ndi kupanikizika, kumathandizira kukula kwa kristalo wa SiC pa 4-8 inch substrates. Dongosolo ili la CVD litha kupanga mitundu yosiyanasiyana ya makristalo a SiC kuphatikiza mtundu wa 4H / 6H-N ndi mtundu wa 4H / 6H-SEMI, wopereka mayankho athunthu kuchokera ku zida kupita kunjira. Dongosololi limathandizira pakukula kwa ma 2-12 inch wafers, ndikupangitsa kuti ikhale yoyenera kupanga zambiri zamagetsi zamagetsi ndi zida za RF.


Mawonekedwe

Mfundo Yogwirira Ntchito

Mfundo yaikulu ya dongosolo lathu la CVD imaphatikizapo kuwonongeka kwa matenthedwe a silicon-containing (mwachitsanzo, SiH4) ndi carbon-containing (mwachitsanzo, C3H8) mpweya wotsogola pa kutentha kwakukulu (nthawi zambiri 1500-2000 ° C), kuyika makristasi a SiC pamagulu apansi kudzera muzochitika zamagesi. Ukadaulowu ndiwoyenera makamaka popanga chiyero chapamwamba (> 99.9995%) 4H/6H-SiC makhiristo amodzi okhala ndi kachulukidwe kakang'ono (<1000/cm²), kukwaniritsa zofunikira zolimba pamagetsi amagetsi ndi zida za RF. Kupyolera mu kuwongolera bwino kwa gasi, kuthamanga kwa mpweya ndi kutentha kwa kutentha, kachitidwe kameneka kamathandizira kuwongolera kolondola kwa mtundu wa crystal conductivity (mtundu wa N / P) ndi resistivity.

Mitundu Yadongosolo ndi Magawo Aukadaulo

Mtundu wa System Kutentha Kusiyanasiyana Zofunika Kwambiri Mapulogalamu
High-Temp CVD 1500-2300 ° C Kutentha kwa graphite induction, ± 5°C kutentha kofanana Kukula kwa makristalo a Bulk SiC
Hot-Filament CVD 800-1400 ° C Kutentha kwa tungsten filament, 10-50μm / h mlingo woyika SiC thick epitaxy
Chithunzi cha VPE 1200-1800 ° C Kuwongolera kutentha kwamitundu yambiri,> 80% kugwiritsa ntchito gasi Kupanga kwakukulu kwa epi-wafer
Mtengo wa PECVD 400-800 ° C Kuwonjezeka kwa plasma, 1-10μm / h kutsika Mafilimu otsika kwambiri a SiC

Zofunikira Zaukadaulo

1. MwaukadauloZida Temperature Control System
Ng'anjoyi imakhala ndi makina otenthetsera amitundu yambiri omwe amatha kusunga kutentha mpaka 2300 ° C ndi ± 1 ° C m'chipinda chonse chokulirapo. Kuwongolera bwino kwa kutenthaku kumatheka kudzera:
Magawo 12 otenthetsera odzilamulira okha.
Kuwunika kowonjezera kwa thermocouple (Mtundu C W-Re).
Real-time thermal profile adjustment algorithms.
Makoma a chipinda chozizira ndi madzi kuti azitha kuwongolera kutentha.

2. Kutumiza Gasi ndi Kusakaniza Technology
Makina athu ogawa gasi amatsimikizira kusakanikirana koyenera kwa kalambulabwalo ndi kutumiza mayunifolomu:
Olamulira othamanga kwambiri ndi ± 0.05sccm kulondola.
Mitundu yambiri ya jakisoni wa gasi.
Kuwunika kwa gasi mu-situ (FTIR spectroscopy).
Kulipila koyenda modzidzimutsa panthawi yakukula.

3. Kupititsa patsogolo Ubwino wa Crystal
Dongosololi limaphatikizanso zatsopano zingapo kuti musinthe mawonekedwe a kristalo:
Chogwirizira gawo lapansi chozungulira (0-100rpm chokhazikika).
Ukadaulo wapamwamba wowongolera malire.
In-situ defect monitoring system (UV laser scattering).
Kulipiritsa kupsinjika kwakanthawi pakukula.

4. Njira Zodzichitira zokha ndi Kuwongolera
Kukonzekera kokhazikika kokhazikika.
Kukhathamiritsa kwa nthawi yeniyeni ya kukula kwa AI.
Kuwunika kwakutali ndi matenda.
1000+ parameter data kudula (kusungidwa kwa zaka 5).

5. Chitetezo ndi Makhalidwe Odalirika
Katatu-yowonjezera pa kutentha kwambiri.
Makina odziyeretsa okha mwadzidzidzi.
Mapangidwe opangidwa ndi seismic.
98.5% uptime chitsimikizo.

6. Scalable Architecture
Mapangidwe a modular amalola kukweza mphamvu.
Zimagwirizana ndi kukula kwa 100mm mpaka 200mm wafer.
Imathandiza masanjidwe ofukula ndi opingasa.
Kusintha mwachangu zigawo zokonzekera.

7. Mphamvu Mwachangu
30% yotsika mphamvu yogwiritsira ntchito mphamvu kuposa machitidwe ofanana.
Njira yobwezeretsa kutentha imatenga 60% ya kutentha kwa zinyalala.
Ma algorithms okhathamiritsa a gasi.
Zofunikira za malo ogwirizana ndi LEED.

8. Zinthu Zosiyanasiyana
Imakula mitundu yonse yayikulu ya SiC (4H, 6H, 3C).
Imathandizira mitundu yonse ya conductive ndi semi-insulating.
Imakhala ndi machitidwe osiyanasiyana a doping (N-mtundu, P-mtundu).
Zimagwirizana ndi zoyambira zina (mwachitsanzo, TMS, TES).

9. Ntchito ya Vacuum System
Kupanikizika koyambira: <1×10⁻⁶ Torr
Mlingo wotsikira: <1×10⁻⁹ Torr·L/mphindi
Liwiro lakupopa: 5000L/s (kwa SiH₄)

Kuwongolera kuthamanga kwamagetsi panthawi yakukula
Maluso aukadaulo awa akuwonetsa kuthekera kwa makina athu kupanga masinthidwe amtundu wa SiC ochita kafukufuku komanso opangidwa bwino kwambiri omwe amatsogola kumakampani komanso zokolola. Kuphatikizika kwa kuwongolera kolondola, kuwunika kwapamwamba, ndi uinjiniya wamphamvu kumapangitsa dongosolo la CVD kukhala chisankho choyenera pa R&D ndi kupanga ma voliyumu pamagetsi amagetsi, zida za RF, ndi zida zina zapamwamba za semiconductor.

Ubwino waukulu

1. Kukula kwa Crystal Kwapamwamba
• Kachulukidwe kachilema kutsika ngati <1000/cm² (4H-SiC)
• Doping uniform <5% (6-inch wafers)
• Kuyera kwa Crystal >99.9995%

2. Kuthekera Kwakukulu Kupanga
• Imathandizira mpaka kukula kwa 8-inch wafer
• Kufanana kwa Diameter> 99%
• Makulidwe amtundu <±2%

3. Yeniyeni Njira Control
• Kuwongolera kutentha ndi ±1°C
• Kulondola kwa kayendedwe ka gasi ± 0.1sccm
• Kuwongolera kuthamanga kwamphamvu ± 0.1Torr

4. Mphamvu Mwachangu
• 30% yowonjezera mphamvu kuposa njira wamba
• Kukula mpaka 50-200μm/h
• Zida zowonjezera>95%

Mapulogalamu Ofunika Kwambiri

1. Zida Zamagetsi Zamagetsi
Magawo a 6-inchi 4H-SiC a 1200V+ MOSFETs/diode, kuchepetsa kutayika kwa kusintha ndi 50%.

2. Kulumikizana kwa 5G
Semi-insulating SiC substrates (resistivity>10⁸Ω·cm) ya ma PAs oyambira, ndikuyika kutayika <0.3dB pa>10GHz.

3. Magalimoto Atsopano Amagetsi
Ma module amagetsi a SiC amakulitsa kuchuluka kwa EV ndi 5-8% ndikuchepetsa nthawi yolipirira ndi 30%.

4. PV Inverters
Malo omwe ali ndi vuto lochepa amathandizira kutembenuka kupitilira 99% pomwe amachepetsa kukula kwa dongosolo ndi 40%.

Ntchito za XKH

1. Ntchito Zosintha Mwamakonda Anu
Zogwirizana ndi 4-8 inchi CVD machitidwe.
Imathandiza kukula kwa 4H/6H-N mtundu, 4H/6H-SEMI mtundu insulating, etc.

2. Thandizo laukadaulo
Maphunziro athunthu okhudza magwiridwe antchito ndi kukhathamiritsa kwazinthu.
24/7 kuyankha kwaukadaulo.

3. Turnkey Solutions
Ntchito zomaliza mpaka kumapeto kuyambira pakukhazikitsa mpaka kutsimikizira.

4. Zinthu Zofunika
2-12 inch SiC substrates/epi-wafers zilipo.
Imathandizira 4H/6H/3C polytypes.

Osiyanitsa kwambiri ndi awa:
Mpaka 8-inch kukula kwa kristalo.
20% kukula mwachangu kuposa avareji yamakampani.
98% kudalirika kwadongosolo.
Full wanzeru kulamulira dongosolo phukusi.

SiC ingot kukula ng'anjo 4
SiC ingot kukula ng'anjo 5

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