4 inch SiC Wafers 6H Semi-Insulating SiC Substrates prime, research, and dummy grade
Mafotokozedwe a Zamalonda
Gulu | Zero MPD Kalasi Yopanga (Z Giredi) | Magiredi Okhazikika Opanga (P Giredi) | Dummy Grade (D Grade) | ||||||||
Diameter | 99.5 mm ~ 100.0 mm | ||||||||||
4H-SI | 500 μm ± 20 μm | 500 μm ± 25 μm | |||||||||
Wafer Orientation |
Otalikirana: 4.0 ° kulowera <1120 > ± 0.5 ° kwa 4H-N, Pa axis: <0001>±0.5° kwa 4H-SI | ||||||||||
4H-SI | ≤1cm-2 | ≤5 cm-2 | ≤15 cm-2 | ||||||||
4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |||||||||
Chiyambi cha Flat Orientation | {10-10} ±5.0° | ||||||||||
Utali Woyambira Wathyathyathya | 32.5 mm± 2.0 mm | ||||||||||
Kutalika kwa Sekondale | 18.0 mm± 2.0 mm | ||||||||||
Sekondale Flat Orientation | Silicon nkhope m'mwamba: 90 ° CW. kuchokera ku Prime flat ± 5.0 ° | ||||||||||
Kupatula M'mphepete | 3 mm | ||||||||||
LTV/TTV/Bow/Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||||||||
Ukali | C nkhope | Chipolishi | Ra≤1 nm | ||||||||
Ndi face | CMP | Ra≤0.2 nm | Ra≤0.5 nm | ||||||||
Mphepete Mng'alu Mwa Kuwala Kwakukulu Kwambiri | Palibe | Kutalika kochulukira ≤ 10 mm, limodzi kutalika ≤2 mm | |||||||||
Hex Plates Mwa Kuwala Kwakukulu Kwambiri | Malo owonjezera ≤0.05% | Malo owonjezera ≤0.1% | |||||||||
Madera a Polytype Mwa Kuwala Kwakukulu Kwambiri | Palibe | Malo owonjezera≤3% | |||||||||
Mawonekedwe a Carbon Inclusions | Malo owonjezera ≤0.05% | Malo owonjezera ≤3% | |||||||||
Silicon Surface Scratches Ndi Kuwala Kwakukulu Kwambiri | Palibe | Utali wochuluka≤1*wafer awiri | |||||||||
Mphepete Chips Mmwamba Mwamphamvu Kuwala | Palibe chololedwa ≥0.2 mm m'lifupi ndi kuya | 5 zololedwa, ≤1 mm iliyonse | |||||||||
Silicon Surface Kuipitsidwa Ndi High Intensity | Palibe | ||||||||||
Kupaka | Makaseti amitundu yopyapyala Kapena Chidebe Chowotcha Chimodzi |
Chithunzi chatsatanetsatane
Lembani uthenga wanu apa ndikutumiza kwa ife