2Inch 6H-N Silicon Carbide Substrate Sic Wafer Wopukutidwa Pawiri Wopanga kalasi ya Mos

2Inch 6H-N Silicon Carbide Substrate Sic Wafer Wopukutidwa Pawiri Wopanga Prime giredi ya Mos Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Gawo la 6H n-type Silicon Carbide (SiC) single-crystal substrate ndi chinthu chofunikira cha semiconductor chomwe chimagwiritsidwa ntchito kwambiri pamagetsi amphamvu kwambiri, ma frequency apamwamba, komanso kutentha kwambiri. 6H-N SiC yodziwika bwino chifukwa cha mawonekedwe ake a kristalo wa hexagonal, imapereka bandgap yayikulu komanso matenthedwe apamwamba, ndikupangitsa kuti ikhale yabwino kwa malo ovuta.
Kuwonongeka kwakukulu kwa magetsi azinthuzi komanso kuyenda kwa ma elekitironi kumathandizira kupanga zida zamagetsi zamagetsi zamagetsi, monga ma MOSFET ndi ma IGBT, omwe amatha kugwira ntchito pamagetsi komanso kutentha kwambiri kuposa omwe amapangidwa kuchokera ku silicon yachikhalidwe. Kutentha kwake kwabwino kwambiri kumatsimikizira kutentha kwabwino, kofunikira kuti pakhale ntchito komanso kudalirika pakugwiritsa ntchito mphamvu zambiri.
M'mapulogalamu a radiofrequency (RF), katundu wa 6H-N SiC amathandizira kupanga zida zomwe zimatha kugwira ntchito pama frequency apamwamba ndikuwongolera bwino. Kukhazikika kwake kwamankhwala komanso kukana ma radiation kumapangitsanso kuti ikhale yoyenera kugwiritsidwa ntchito m'malo ovuta, kuphatikiza magawo amlengalenga ndi chitetezo.
Kuphatikiza apo, magawo a 6H-N SiC ndi ofunikira pazida za optoelectronic, monga ma ultraviolet photodetectors, pomwe bandgap yawo yayikulu imalola kuzindikira bwino kwa kuwala kwa UV. Kuphatikiza kwa zinthuzi kumapangitsa 6H n-type SiC kukhala yosunthika komanso yofunikira pakupititsa patsogolo umisiri wamakono wamagetsi ndi optoelectronic.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zogulitsa Tags

Zotsatirazi ndi mawonekedwe a silicon carbide wafer:

· Dzina lazogulitsa: SiC Substrate
· Maonekedwe a Hexagonal: Zapadera zamagetsi zamagetsi.
Kuyenda kwa Electron High: ~ 600 cm²/V·s.
Kukhazikika kwa Chemical: Kusachita dzimbiri.
· Radiation Resistance: Yoyenera kumadera ovuta.
· Low Intrinsic Carrier Concentration: Imagwira bwino pa kutentha kwambiri.
· Kukhalitsa: Mphamvu zamakina katundu.
Kuthekera kwa Optoelectronic: Kuzindikira bwino kwa kuwala kwa UV.

Silicon carbide wafer ili ndi ntchito zingapo

Mapulogalamu a SiC wafer:
Magawo a SiC (Silicon Carbide) amagwiritsidwa ntchito pazinthu zosiyanasiyana zogwira ntchito kwambiri chifukwa cha mawonekedwe awo apadera monga matenthedwe apamwamba, mphamvu yamagetsi yamagetsi, ndi bandgap yayikulu. Nawa mapulogalamu ena:

1.Zamagetsi Zamagetsi:
·Ma MOSFET amphamvu kwambiri
·IGBTs (Insulated Gate Bipolar Transistors)
· Schottky diodes
· Ma inverters amphamvu

2.Zida Zapamwamba-Frequency:
· RF (Radio Frequency) amplifiers
· Ma microwave transistors
·Millimeter-wave zida

3.Zamagetsi Zotentha Kwambiri:
· Masensa ndi mabwalo ozungulira malo ovuta
· Zamagetsi zakuthambo
·Zamagetsi zamagalimoto (monga mayunitsi owongolera injini)

4. Optoelectronics:
·Magalasi a ma photodetectors a Ultraviolet (UV).
·Light-emitting diode (ma LED)
· Ma diode a laser

5.Njira Zongowonjezera Mphamvu:
· Ma inverter a dzuwa
· Ma turbine converters amphepo
·Magalimoto amagetsi amagetsi

6.Mafakitale ndi Chitetezo:
· Makina a radar
·Kulumikizana ndi satellite
· Chida cha zida za nyukiliya

SiC wafer Customization

Titha kusintha kukula kwa gawo lapansi la SiC kuti tikwaniritse zomwe mukufuna. Timaperekanso chowotcha cha 4H-Semi HPSI SiC chokhala ndi kukula kwa 10x10mm kapena 5x5 mm.
Mtengo umatsimikiziridwa ndi mlanduwo, ndipo tsatanetsatane wapaketiyo ukhoza kusinthidwa malinga ndi zomwe mumakonda.
Nthawi yobweretsera ili mkati mwa masabata a 2-4. Timavomereza kulipira kudzera mu T/T.
Fakitale yathu ili ndi zida zopangira zapamwamba komanso gulu laukadaulo, lomwe lingasinthire makonda osiyanasiyana, makulidwe ndi mawonekedwe a SiC wafer malinga ndi zomwe makasitomala amafuna.