2 inch SiC Wafers 6H kapena 4H Semi-Insulating SiC Substrates Dia50.8mm
Kugwiritsa ntchito silicon carbide gawo lapansi
Silicon carbide gawo lapansi akhoza kugawidwa mu conductive mtundu ndi theka-amateteza mtundu malinga resistivity. Zipangizo zopangira silicon carbide zimagwiritsidwa ntchito makamaka pamagalimoto amagetsi, kupanga magetsi a photovoltaic, mayendedwe anjanji, malo opangira data, kulipiritsa ndi zina. Makampani opanga magalimoto amagetsi amafunikira kwambiri ma silicon carbide substrates, ndipo pakadali pano, Tesla, BYD, NIO, Xiaopeng ndi makampani ena atsopano amagetsi akukonzekera kugwiritsa ntchito zida kapena ma module a silicon carbide discrete.
Zipangizo za semi-insulated silicon carbide zimagwiritsidwa ntchito makamaka muzoyankhulana za 5G, mauthenga a galimoto, ntchito zoteteza dziko, kutumiza deta, mlengalenga ndi zina. Pakukula gallium nitride epitaxial layer pa semi-insulated silicon carbide substrate, silicon-based gallium nitride epitaxial wafer imatha kupangidwanso kukhala zida za microwave RF, zomwe zimagwiritsidwa ntchito kwambiri pagawo la RF, monga zokulitsa mphamvu mukulankhulana kwa 5G ndi zodziwira wailesi mu chitetezo cha dziko.
Kupanga zinthu za silicon carbide substrate kumaphatikizapo kukulitsa zida, kaphatikizidwe kazinthu zopangira, kukula kwa kristalo, kudula makristalo, kupukuta, kuyeretsa ndi kuyesa, ndi maulalo ena ambiri. Pankhani ya zopangira, makampani a Songshan Boron amapereka silicon carbide zopangira pamsika, ndipo apeza malonda ang'onoang'ono. Zida za semiconductor za m'badwo wachitatu zomwe zimayimiridwa ndi silicon carbide zimagwira ntchito yofunika kwambiri m'makampani amakono, ndi kuthamangitsidwa kwa magalimoto atsopano amphamvu ndi ntchito za photovoltaic, kufunikira kwa gawo lapansi la silicon carbide kwatsala pang'ono kuyambitsa malo olowera.