12 Inchi SiC gawo lapansi awiri 300mm makulidwe 750μm 4H-N Mtundu akhoza makonda

12 Inchi SiC gawo lapansi Diameter 300mm Makulidwe 750μm 4H-N Mtundu ukhoza makonda Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Pazovuta zoyeserera mu semiconducy kusintha kwa mafakitale ndi zothetsera bwino komanso zowonjezera, kulowetsedwa kwa magawo 12-inchi sicmir grabide gribide. Poyerekeza ndi mafotokozedwe achikale a 6-inchi ndi 8-inchi, mwayi wawukulu wa gawo lapansi la 12-inchi umawonjezera kuchuluka kwa tchipisi chomwe chimapangidwa pawafa iliyonse kuwirikiza kanayi. Kuphatikiza apo, mtengo wagawo la 12-inch SiC substrate wachepetsedwa ndi 35-40% poyerekeza ndi magawo wamba a 8-inch, omwe ndi ofunikira kuti pakhale kufalikira kwa zinthu zomaliza.
Pogwiritsa ntchito ukadaulo wathu waukadaulo woyendetsa nthunzi, takwanitsa kuwongolera kachulukidwe kakachulukidwe mu makhiristo a 12-inch, ndikupereka maziko apadera opangira zida zotsatila. Kupita patsogolo kumeneku ndikofunika kwambiri pakati pa kuchepa kwa chip padziko lonse lapansi.

Zipangizo zamagetsi zomwe zimagwiritsidwa ntchito tsiku ndi tsiku - monga ma EV othamangitsira mwachangu komanso masiteshoni a 5G - zikutengera gawo lalikululi. Makamaka m'malo otentha kwambiri, okwera kwambiri, komanso m'malo ena ovuta, gawo lapansi la 12-inch SiC limawonetsa kukhazikika kwapamwamba kwambiri poyerekeza ndi zida zopangidwa ndi silicon.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Zosintha zaukadaulo

12 inch Silicon Carbide (SiC) Matchulidwe a gawo lapansi
Gulu		ZeroMPD Production Giredi (Z Giredi)	Standard Production Giredi (P)		Dummy Grade (D kalasi)
Diameter		3 00mm ~ 1305mm
Makulidwe	4H-N	750μm ± 15 μm	750μm±25μm
	4H-SI	750μm ± 15 μm	750μm±25μm
Wafer Orientation		Kutalikirana: 4.0 ° kulowera <1120 > ± 0.5 ° kwa 4H-N, Pa axis: <0001> ± 0.5 ° kwa 4H-SI
Kuchuluka kwa Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kukaniza	4H-N	0.015 ~ 0.024 Ω·cm			0.015 ~ 0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Chiyambi cha Flat Orientation		{10-10} ±5.0°
Utali Woyambira Wathyathyathya	4H-N	N / A
	4H-SI	Notch
Kupatula M'mphepete		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Ukali		Chipolishi Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Mphepete Mng'alu Mwa Kuwala Kwakukulu Kwambiri Hex Plates Mwa Kuwala Kwakukulu Kwambiri Madera a Polytype Mwa Kuwala Kwakukulu Kwambiri Mawonekedwe a Carbon Inclusions Silicon Surface Scratches Ndi Kuwala Kwakukulu Kwambiri		Palibe Malo owonjezera ≤0.05% Palibe Malo owonjezera ≤0.05% Palibe			Utali wokwanira ≤ 20 mm, utali umodzi≤2 mm Malo owonjezera ≤0.1% Malo owonjezera≤3% Malo owonjezera ≤3% Kutalikirana ≤1 × awiri wafer
Mphepete Chips Mwa High Intensity Kuwala		Palibe chololedwa ≥0.2mm m'lifupi ndi kuya			7 zololedwa, ≤1 mm iliyonse
(TSD) Kusokoneza screw screw		≤500 cm-2		N / A
(BPD) Kusuntha kwapansi kwa ndege		≤1000 cm-2		N / A
Silicon Surface Kuipitsidwa Ndi Kuwala Kwakukulu Kwambiri		Palibe
Kupaka		Makaseti amitundu yopyapyala Kapena Chidebe Chowotcha Chimodzi
Ndemanga:
1 Malire opunduka amagwira ntchito pamtunda wonse wophatikizika kupatula m'mphepete mwake. 2Zikandazi ziyenera kuyang'aniridwa pa Si nkhope yokha. 3 Zomwe zasunthidwa zimangochokera ku KOH etched wafers.

Zofunika Kwambiri

1.Kuthekera kwa Kupanga ndi Zopindulitsa Zamtengo: Kupanga kwakukulu kwa gawo lapansi la 12-inch SiC (12-inch silicon carbide substrate) kumasonyeza nyengo yatsopano mu kupanga semiconductor. Chiwerengero cha tchipisi chomwe chimapezedwa kuchokera ku chowotcha chimodzi chimafika nthawi 2.25 kuposa magawo 8-inchi, zomwe zimayendetsa mwachindunji pakupanga bwino. Ndemanga zamakasitomala zikuwonetsa kuti kugwiritsa ntchito magawo 12-inch kwachepetsa mtengo wopangira gawo lamagetsi ndi 28%, ndikupanga mwayi wampikisano pamsika womwe ukupikisana nawo kwambiri.
2.Zapadera Zakuthupi Zakuthupi: Gawo la 12-inch SiC limalandira ubwino wonse wa silicon carbide material - matenthedwe ake a matenthedwe ndi 3 nthawi ya silicon, pamene mphamvu yake ya kusweka imafika nthawi 10 kuposa ya silicon. Makhalidwewa amathandizira zida zozikidwa pa magawo 12-inch kuti zizigwira ntchito mosasunthika m'malo otentha kwambiri opitilira 200 ° C, zomwe zimapangitsa kuti zikhale zoyenera kugwiritsa ntchito movutikira monga magalimoto amagetsi.
3.Surface Treatment Technology: Tapanga ndondomeko yatsopano yopangira makina opangira mankhwala (CMP) makamaka kwa magawo a 12-inch SiC, kukwaniritsa kutsika kwa atomiki (Ra<0.15nm). Kupambana kumeneku kumathetsa vuto lapadziko lonse lapansi lamankhwala amtundu waukulu wa silicon carbide wafer pamwamba, kuchotsa zopinga za kukula kwapamwamba kwa epitaxial.
4.Thermal Management Performance: Muzogwiritsira ntchito, magawo a 12-inch SiC amasonyeza mphamvu zochititsa chidwi za kutaya kutentha. Deta yoyesera ikuwonetsa kuti pansi pa kachulukidwe ka mphamvu komweko, zida zogwiritsa ntchito magawo 12-inch zimagwira ntchito pa kutentha kwa 40-50 ° C kutsika kuposa zida zopangira silicon, kumakulitsa kwambiri moyo wautumiki wa zida.

Main Applications

1.New Energy Vehicle Ecosystem: Gawo la 12-inch SiC (12-inch silicon carbide substrate) likusintha kamangidwe kagalimoto kamagetsi kamagetsi. Kuchokera pa ma charger aku onboard (OBC) kupita ku ma inverter akuluakulu ndi makina owongolera ma batire, kuwongolera bwino komwe kumabwera ndi magawo 12-inch kumawonjezera magalimoto ndi 5-8%. Malipoti ochokera kwa wopanga magalimoto otsogola akuwonetsa kuti kugwiritsa ntchito magawo athu a mainchesi 12 kumachepetsa kutayika kwa mphamvu mu makina ochapira mwachangu ndi 62%.
2. Gawo la Mphamvu Zowonjezereka: M'malo opangira magetsi a photovoltaic, ma inverters opangidwa ndi 12-inch SiC substrates samangokhala ndi mawonekedwe ang'onoang'ono komanso amapindula bwino kutembenuka kupitirira 99%. Makamaka muzochitika zogawika, kugwiritsa ntchito bwino kumeneku kumatanthawuza kupulumutsa kwapachaka kwa ma yuan masauzande ambiri pakuwonongeka kwa magetsi kwa ogwira ntchito.
3.Industrial Automation: Otembenuza pafupipafupi omwe amagwiritsa ntchito magawo 12-inch amawonetsa ntchito yabwino kwambiri mu maloboti amakampani, zida zamakina a CNC, ndi zida zina. Mawonekedwe awo osinthira pafupipafupi amawongolera liwiro la mayankhidwe agalimoto ndi 30% pomwe amachepetsa kusokoneza kwa ma elekitiroma ku gawo limodzi mwamagawo atatu a mayankho wamba.
4.Consumer Electronics Innovation: Njira zamakono zowonjezera zamakono zamakono zamakono zayamba kugwiritsa ntchito magawo a 12-inch SiC. Zikuyembekezeredwa kuti zopangira zolipiritsa mwachangu pamwamba pa 65W zisinthiratu ku mayankho a silicon carbide, ndi magawo 12-inchi omwe akutuluka ngati njira yabwino yopangira ndalama.

Ntchito Zosinthidwa za XKH za 12-inch SiC Substrate

Kukwaniritsa zofunikira za 12-inch SiC substrates (12-inch silicon carbide substrates), XKH imapereka chithandizo chokwanira:
1. Makulidwe Mwamakonda Anu:
Timapereka magawo 12-inch mu makulidwe osiyanasiyana kuphatikiza 725μm kuti akwaniritse zosowa zosiyanasiyana zamagwiritsidwe.
2. Doping concentration:
Kupanga kwathu kumathandizira mitundu ingapo yamadulidwe kuphatikiza magawo a n-type ndi p-type, okhala ndi kuwongolera koyenera kwa resistivity mumitundu ya 0.01-0.02Ω·cm.
3. Ntchito Zoyesa:
Ndi zida zonse zoyezera mawafer-level, timapereka malipoti owunikira.
XKH imamvetsetsa kuti kasitomala aliyense ali ndi zofunikira zapadera za magawo 12-inch SiC. Chifukwa chake timapereka zitsanzo zosinthika zamabizinesi kuti tipereke mayankho opikisana kwambiri, kaya:
· R&D zitsanzo
· Kugula ma voliyumu
Ntchito zathu zosinthidwa makonda zimatsimikizira kuti titha kukwaniritsa zosowa zanu zaukadaulo ndi kupanga pamagawo a 12-inch SiC.